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21. 发明申请

US20050224913A1 Devices comprising aluminum oxide and metal oxide dielectric materials, capacitor constructions, and methods of forming capacitor constructions 失效
标题翻译：包括氧化铝和金属氧化物电介质材料的器件，电容器结构以及形成电容器结构的方法
公开(公告)号：US20050224913A1
公开(公告)日：2005-10-13
申请号：US10822062
申请日：2004-04-08
申请人： Vishwanath Bhat , F. Gealy , Cancheepuram Srividya
发明人： Vishwanath Bhat , F. Gealy , Cancheepuram Srividya
IPC分类号： H01L21/00 , H01L21/02 , H01L21/316 , H01L21/8242
CPC分类号： H01L28/56 , H01L21/02175 , H01L21/02178 , H01L21/022 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L28/40
摘要： The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.
摘要翻译：本发明包括在导电掺杂的半导体材料上具有两个电介质层的结构。电介质层中的一层包含氧化铝，另外含有氧化铝以外的金属氧化物（例如，氧化铪，氧化钽，氧化钛，氧化锆等中的一种或多种）。含有氧化铝的层位于含金属氧化物层和导电掺杂半导体材料之间。本发明包括具有一个含有导电掺杂硅的电极和含有一种或多种金属和/或金属化合物的另一电极的电容器器件。在两个电容器电极之间形成至少两个电介质层，其中一个电介质层包含氧化铝，另一个包含除氧化铝之外的金属氧化物。本发明还包括形成电容器结构的方法。

22. 发明申请

US20050145918A1 Methods of forming capacitors and electronic devices 有权
标题翻译：形成电容器和电子设备的方法
公开(公告)号：US20050145918A1
公开(公告)日：2005-07-07
申请号：US11050088
申请日：2005-02-03
申请人： F. Gealy , Garo Derderian , Chris Carlson
发明人： F. Gealy , Garo Derderian , Chris Carlson
IPC分类号： H01L21/02 , H01L27/108
CPC分类号： H01L28/65 , H01L28/75 , H01L28/91
摘要： A method of forming a capacitor includes forming a first conductive capacitor electrode layer over a substrate. The first electrode layer has an outer surface comprising a noble metal in at least one of elemental and alloy forms. A gaseous mixture comprising a metallorganic deposition precursor and an organic solvent is fed to the outer surface under conditions effective to deposit a capacitor dielectric layer onto the outer surface. A conductive capacitor electrode layer is formed over the capacitor dielectric layer. A method of forming an electronic device includes forming a conductive layer over a substrate. The conductive layer has an outer surface comprising a noble metal in at least one of elemental and alloy forms. A gaseous mixture comprising a metallorganic deposition precursor and an organic solvent is fed to the outer surface under conditions effective to deposit a dielectric layer onto the outer surface.
摘要翻译：形成电容器的方法包括在衬底上形成第一导电电容器电极层。第一电极层具有包含元素和合金形式中的至少一种的贵金属的外表面。包含金属有机物沉积前体和有机溶剂的气体混合物在有效地将电容器介电层沉积到外表面上的条件下进料至外表面。在电容器电介质层上形成导电电容电极层。形成电子器件的方法包括在衬底上形成导电层。导电层具有包含元素和合金形式中的至少一种的贵金属的外表面。将包含金属有机物沉积前体和有机溶剂的气态混合物在有效沉积介电层到外表面上的条件下进料至外表面。

23. 发明申请

US20070252244A1 Methods of forming material over substrates 失效
标题翻译：在基材上形成材料的方法
公开(公告)号：US20070252244A1
公开(公告)日：2007-11-01
申请号：US11413466
申请日：2006-04-28
申请人： Cancheepuram Srividya , Noel Rocklein , John Vernon , Jeff Nelson , F. Gealy , David Korn
发明人： Cancheepuram Srividya , Noel Rocklein , John Vernon , Jeff Nelson , F. Gealy , David Korn
IPC分类号： H01L23/58 , H01L21/469
CPC分类号： C23C16/405 , C23C16/40 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/3141 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L28/40
摘要： The invention includes ALD-type methods in which two or more different precursors are utilized with one or more reactants to form a material. In particular aspects, the precursors are hafnium and aluminum, the only reactant is ozone, and the material is hafnium oxide predominantly in a tetragonal crystalline phase.
摘要翻译：本发明包括ALD型方法，其中使用两种或更多种不同的前体与一种或多种反应物形成材料。在特定方面，前体是铪和铝，唯一的反应物是臭氧，并且该材料主要是四方晶相中的铪氧化物。

24. 发明申请

US20070069270A1 Top electrode in a strongly oxidizing environment 审中-公开
标题翻译：顶极电极处于强氧化环境
公开(公告)号：US20070069270A1
公开(公告)日：2007-03-29
申请号：US11398498
申请日：2006-04-04
申请人： Cem Basceri , Howard Rhodes , Gurtej Sandhu , F. Gealy , Thomas Graettinger
发明人： Cem Basceri , Howard Rhodes , Gurtej Sandhu , F. Gealy , Thomas Graettinger
IPC分类号： H01L29/94
CPC分类号： H01L28/65 , H01L21/31637 , H01L21/31691 , H01L23/5222 , H01L27/10852 , H01L28/56 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in a flush manner. The first insulating layer comprises a structure having a plurality of oxygen cites and a plurality of oxygen atoms that partially fill the oxygen cites, wherein the unfilled oxygen cites define a concentration of oxygen vacancies. The CIC sandwich further comprises a second conducting layer deposited over the first insulating layer in a strongly oxidizing ambient so as to reduce the concentration of oxygen vacancies in the first insulating layer, so as to provide an oxygen-rich interface layer between the first insulating layer and the second conducting layer, and so as to trap a plurality of oxygen atoms within the second conducting layer. The oxygen-rich interface layer and second conducting layer act as oxygen vacancy sinks for absorbing migrating oxygen vacancies that originate from the first insulating layer to thereby reduce the concentration of oxygen vacancies in the first insulating layer and to thereby reduce the buildup of oxygen vacancies at the interface layer. Thus, the first insulating layer provides an increased dielectric constant and an increased resistance to current flowing therethrough so as to increase the capacitance of the CIC sandwich and so as to reduce leakage currents flowing through the CIC sandwich.
摘要翻译：一种改进的电荷存储装置及其提供方法，电荷存储装置包括导体 - 绝缘体导体（CIC）三明治。 CIC夹层包括沉积在半导体集成电路上的第一导电层。 CIC夹层还包括以齐平方式沉积在第一导电层上的第一绝缘层。第一绝缘层包括具有多个氧化物和部分填充氧化物的多个氧原子的结构，其中未填充的氧气定义氧空位的浓度。 CIC夹层还包括在强氧化环境中沉积在第一绝缘层上的第二导电层，以便降低第一绝缘层中氧空位的浓度，从而在第一绝缘层之间提供富氧界面层和第二导电层，以便在第二导电层内捕获多个氧原子。富氧界面层和第二导电层用作氧空位吸收器，用于吸收源于第一绝缘层的迁移氧空位，从而降低第一绝缘层中氧空位的浓度，从而减少氧空位的累积接口层。因此，第一绝缘层提供增加的介电常数和增加的电流流过其中，从而增加CIC夹层的电容，并且减少流过CIC夹层的漏电流。

25. 发明申请

US20060263974A1 Methods of electrically interconnecting different elevation conductive structures, methods of forming capacitors, methods of forming an interconnect between a substrate bit line contact and a bit line in DRAM, and methods of forming DRAM memory cell 审中-公开
标题翻译：电连接不同高程导电结构的方法，形成电容器的方法，在DRAM中形成衬底位线接触和位线之间的互连的方法，以及形成DRAM存储单元的方法
公开(公告)号：US20060263974A1
公开(公告)日：2006-11-23
申请号：US11131555
申请日：2005-05-18
申请人： Brett Busch , David Hwang , F. Gealy
发明人： Brett Busch , David Hwang , F. Gealy
IPC分类号： H01L21/4763 , H01L21/8242
CPC分类号： H01L21/76879 , B82Y10/00 , H01L21/28525 , H01L21/76885 , H01L21/76897 , H01L27/10811 , H01L27/10814 , H01L27/10855 , H01L27/10888 , H01L28/91 , Y10S977/773
摘要： The invention includes methods of electrically interconnecting different elevation conductive structures, methods of forming capacitors, methods of forming an interconnect between a substrate bit line contact and a bit line in DRAM, and methods of forming DRAM memory cells. In one implementation, a method of electrically interconnecting different elevation conductive structures includes forming a first conductive structure comprising a first electrically conductive surface at a first elevation of a substrate. A nanowhisker is grown from the first electrically conductive surface, and is provided to be electrically conductive. Electrically insulative material is provided about the nanowhisker. An electrically conductive material is deposited over the electrically insulative material in electrical contact with the nanowhisker at a second elevation which is elevationally outward of the first elevation, and the electrically conductive material is provided into a second conductive structure. Other aspects and implementations are contemplated.
摘要翻译：本发明包括电互连不同高程导电结构的方法，形成电容器的方法，在DRAM中形成衬底位线接触和位线之间的互连的方法，以及形成DRAM存储单元的方法。在一个实施方式中，电连接不同高程导电结构的方法包括在衬底的第一高度处形成包括第一导电表面的第一导电结构。纳米晶须从第一导电表面生长，并被提供为导电的。提供关于纳米晶须的电绝缘材料。导电材料沉积在电绝缘材料上，在第二高度处与纳米晶须电接触，第二高度位于第一高度的正上方，并且导电材料被提供到第二导电结构中。考虑了其他方面和实现。

26. 发明申请

US20060252221A1 Methods of forming hafnium-containing materials 有权
公开(公告)号：US20060252221A1
公开(公告)日：2006-11-09
申请号：US11485593
申请日：2006-07-11
申请人： Cem Basceri , F. Gealy , Gurtej Sandhu
发明人： Cem Basceri , F. Gealy , Gurtej Sandhu
IPC分类号： H01L21/20 , H01L21/31 , H01L21/8242
CPC分类号： H01G4/33 , H01G4/1209 , H01G4/1272 , H01L21/31645 , H01L27/10852 , H01L28/60 , H01L28/65 , H01L28/90 , H01L28/91 , H01L29/7833
摘要： The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to grow second hafnium-containing material over the seed material. The second hafnium-containing material is in a crystalline phase and/or orientation different from the crystalline phase and orientation of the hafnium-containing seed material. The second hafnium-containing material can be, for example, in an amorphous phase. The seed material is then utilized to induce a desired crystalline phase and orientation in the second hafnium-containing material. The invention also includes capacitor constructions utilizing hafnium-containing materials, and circuit assemblies comprising the capacitor constructions.

27. 发明申请

US20060001161A1 Electrical contact for high dielectric constant capacitors and method for fabricating the same 审中-公开
公开(公告)号：US20060001161A1
公开(公告)日：2006-01-05
申请号：US11215238
申请日：2005-08-30
申请人： Thomas Graettinger , F. Gealy
发明人： Thomas Graettinger , F. Gealy
IPC分类号： H01L21/4763 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/7687 , H01L21/28518 , H01L21/76829 , H01L21/76831 , H01L21/76855 , H01L21/76897 , H01L23/485 , H01L27/10855 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/60 , H01L28/75 , H01L2924/0002 , H01L2924/00
摘要： An electrical contact includes a non-conductive spacer surrounding conductive plug material along the full height of the contact. The spacer inhibits oxide and other diffusion through the contact. In the illustrated embodiment, the contact includes metals or metal oxides which are resistant to oxidation, and additional conductive barrier layers. The contact is particularly useful in integrated circuits which include high dielectric constant materials.

28. 发明申请

US20050104111A1 DRAM constructions, memory arrays and semiconductor constructions 有权
标题翻译： DRAM结构，存储器阵列和半导体结构
公开(公告)号：US20050104111A1
公开(公告)日：2005-05-19
申请号：US11015689
申请日：2004-12-17
申请人： Cancheepuram Srividya , F. Gealy , Thomas Graettinger
发明人： Cancheepuram Srividya , F. Gealy , Thomas Graettinger
IPC分类号： H01L21/02 , H01L21/334 , H01L21/4763 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L28/65 , H01L27/1085 , H01L27/10852 , H01L27/1087 , H01L28/84 , H01L29/66181
摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
摘要翻译：本发明包括沉积贵金属的方法。提供基板。衬底具有第一区域和第二区域。第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。本发明还包括电容器结构和形成电容器结构的方法。

29. 发明申请

US20050032325A1 Methods of forming capacitors 失效
标题翻译：形成电容器的方法
公开(公告)号：US20050032325A1
公开(公告)日：2005-02-10
申请号：US10914824
申请日：2004-08-09
申请人： Vishwanath Bhat , Chris Carlson , F. Gealy
发明人： Vishwanath Bhat , Chris Carlson , F. Gealy
IPC分类号： H01G4/08 , H01G4/12 , H01G4/33 , H01L21/02 , H01L21/316 , H01L21/4763 , H01L21/31 , H01L21/20 , H01L21/469
CPC分类号： H01G4/085 , H01G4/1272 , H01G4/33 , H01L21/02178 , H01L21/0228 , H01L21/31616 , H01L21/31683 , H01L28/40
摘要： A method of forming a capacitor includes forming a conductive metal first electrode layer over a substrate, with the conductive metal being oxidizable to a higher degree at and above an oxidation temperature as compared to any degree of oxidation below the oxidation temperature. At least one oxygen containing vapor precursor is fed to the conductive metal first electrode layer below the oxidation temperature under conditions effective to form a first portion oxide material of a capacitor dielectric region over the conductive metal first electrode layer. At least one vapor precursor is fed over the first portion at a temperature above the oxidation temperature effective to form a second portion oxide material of the capacitor dielectric region over the first portion. The oxide material of the first portion and the oxide material of the second portion are common in chemical composition. A conductive second electrode layer is formed over the second portion oxide material of the capacitor dielectric region.
摘要翻译：形成电容器的方法包括在衬底上形成导电金属第一电极层，与在氧化温度以下的任何氧化度相比，导电金属可以在氧化温度以上高于可氧化的程度。在导电金属第一电极层上有效形成电容器电介质区域的第一部分氧化物材料的条件下，在氧化温度以下将至少一种含氧气体前体供给至导电金属第一电极层。至少一种蒸气前体在高于氧化温度的温度下在第一部分上进料，有效地在第一部分上形成电容器电介质区域的第二部分氧化物材料。第一部分的氧化物材料和第二部分的氧化物材料在化学组成中是常见的。在电容器电介质区域的第二部分氧化物材料上形成导电的第二电极层。

30. 发明申请

US20050026458A1 Methods of forming hafnium-containing materials, methods of forming hafnium oxide, and constructions comprising hafnium oxide 有权
标题翻译：形成含铪材料的方法，形成氧化铪的方法和包含氧化铪的结构
公开(公告)号：US20050026458A1
公开(公告)日：2005-02-03
申请号：US10928547
申请日：2004-08-26
申请人： Cem Basceri , F. Gealy , Gurtej Sandhu
发明人： Cem Basceri , F. Gealy , Gurtej Sandhu
IPC分类号： H01G4/06 , H01G4/12 , H01G4/33 , H01L21/02 , H01L21/469 , H01L21/8242
CPC分类号： H01G4/33 , H01G4/1209 , H01G4/1272 , H01L21/31645 , H01L27/10852 , H01L28/60 , H01L28/65 , H01L28/90 , H01L28/91 , H01L29/7833
摘要： The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to grow second hafnium-containing material over the seed material. The second hafnium-containing material is in a crystalline phase and/or orientation different from the crystalline phase and orientation of the hafnium-containing seed material. The second hafnium-containing material can be, for example, in an amorphous phase. The seed material is then utilized to induce a desired crystalline phase and orientation in the second hafnium-containing material. The invention also includes capacitor constructions utilizing hafnium-containing materials, and circuit assemblies comprising the capacitor constructions.
摘要翻译：本发明包括形成含铪材料的方法，例如氧化铪。在一个方面，提供了半导体衬底，并且利用第一反应条件来形成在衬底上所需的结晶相和取向的含铪种子材料。随后，利用第二反应条件在种子材料上生长第二含铪材料。第二含铪材料处于与含铪种子材料的结晶相和取向不同的结晶相和/或取向。第二含铪材料可以是例如非晶相。然后将种子材料用于在第二含铪材料中诱导所需的结晶相和取向。本发明还包括使用含铪材料的电容器结构和包括电容器结构的电路组件。

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