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    • 22. 发明申请
    • THROUGH SILICON VIA FILLING USING AN ELECTROLYTE WITH A DUAL STATE INHIBITOR
    • 通过使用电解液与双态抑制剂进行填充的硅
    • US20110284386A1
    • 2011-11-24
    • US13110488
    • 2011-05-18
    • Mark J. WilleySteven T. Mayer
    • Mark J. WilleySteven T. Mayer
    • C25D5/02C25D19/00C25D3/38
    • C25D3/38C25D5/022C25D7/123C25D21/12H01L21/2885H01L21/76879H01L21/76898H01L23/53228H01L2924/0002H01L2924/00
    • A method for electrofilling large, high aspect ratio recessed features with copper without depositing substantial amounts of copper in the field region is provided. The method allows completely filling recessed features having aspect ratios of at least about 5:1 such as at least about 10:1, and widths of at least about 1 μm in a substantially void-free manner without depositing more than 5% of copper in the field region (relative to the thickness deposited in the recessed feature). The method involves contacting the substrate having one or more large, high aspect ratio recessed features (such as a TSVs) with an electrolyte comprising copper ions and an organic dual state inhibitor (DSI) configured for inhibiting copper deposition in the field region, and electrodepositing copper under potential-controlled conditions, where the potential is controlled not exceed the critical potential of the DSI.
    • 提供了一种用于电镀大量,高纵横比的凹陷特征与铜而不在现场区域中沉积大量铜的方法。 该方法允许以基本无空隙的方式完全填充具有至少约5:1的纵横比(例如至少约10:1)和至少约1μm的宽度的凹陷特征,而不沉积超过5%的铜 场区域(相对于沉积在凹陷特征中的厚度)。 该方法包括将具有一个或多个大的,高纵横比的凹陷特征(例如TSV)的基底与包含铜离子的电解质和被配置用于抑制场区中的铜沉积的有机双态抑制剂(DSI)接触,以及电沉积 在电势控制条件下,电位控制的铜不超过DSI的临界电位。
    • 24. 发明授权
    • Method and apparatus for uniform electropolishing of damascene IC structures by selective agitation
    • 通过选择性搅拌均匀电解抛光镶嵌IC结构的方法和装置
    • US07531079B1
    • 2009-05-12
    • US11065708
    • 2005-02-23
    • Steven T. MayerJohn S. Drewery
    • Steven T. MayerJohn S. Drewery
    • C25F3/16
    • B23H5/08C25F3/16H01L21/32125H01L21/7684
    • The present invention pertains to apparatus and methods for planarization of metal surfaces having both recessed and raised features, over a large range of feature sizes. The invention accomplishes this by increasing the fluid agitation in raised regions with respect to recessed regions. That is, the agitation of the electropolishing bath fluid is agitated or exchanged as a function of elevation on the metal film profile. The higher the elevation, the greater the movement or exchange rate of bath fluid. In preferred methods of the invention, this agitation is achieved through the use of a microporous electropolishing pad that moves over (either near or in contact with) the surface of the wafer during the electropolishing process. Thus, methods of the invention are electropolishing methods, which in some cases include mechanical polishing elements.
    • 本发明涉及在大范围的特征尺寸上具有凹陷和凸起特征的金属表面的平坦化的装置和方法。 本发明通过增加相对于凹陷区域的凸起区域中的流体搅拌来实现。 也就是说,作为金属膜轮廓上的仰角的函数来搅动或更换电抛光浴液的搅动。 海拔越高,浴液的运动或汇率越高。 在本发明的优选方法中,通过使用在电解抛光过程中在晶片表面上移动(接近或接触)的微孔电解抛光垫来实现该搅拌。 因此,本发明的方法是电抛光方法,其在一些情况下包括机械抛光元件。
    • 25. 发明授权
    • Selectively accelerated plating of metal features
    • 选择性加速电镀金属功能
    • US07405163B1
    • 2008-07-29
    • US10824069
    • 2004-04-13
    • John Stephen DrewerySteven T. Mayer
    • John Stephen DrewerySteven T. Mayer
    • H01L21/303
    • H05K3/184H01L21/4846H05K3/045H05K3/107H05K2203/054H05K2203/072
    • An accelerator solution is globally applied to a workpiece to form an accelerator film, and then a portion of the accelerator film is selectively removed from the workpiece to form an acceleration region having a higher concentration of accelerator. The higher concentration of accelerator causes metal to deposit at a faster rate in the acceleration region than in a non-accelerated region for the duration of metal deposition. To make a metal feature, a resist layer is applied to a workpiece surface and patterned to form a recessed region and a field region. Then, a metal seed layer is deposited on the workpiece surface. An accelerator solution is applied so that an accelerator film forms on the metal seed layer. A portion of the accelerator film is selectively removed from the field region, leaving another portion of the accelerator film in the recessed region. Then, copper is electroplated onto the workpiece, and the copper plates at an accelerated rate in the recessed region, resulting in a greater thickness of copper in the recessed region compared to copper in the field region. A wet etch is performed to remove copper from the field region. Then, the resist is removed from the field region, resulting in a coarse copper wire.
    • 将加速器溶液全局应用于工件以形成加速剂膜,然后将一部分加速剂膜从工件中选择性地除去,形成加速剂浓度较高的加速区域。 在金属沉积期间,较高浓度的促进剂会导致金属在加速区域以比非加速区域更快的速率沉积。 为了形成金属特征,将抗蚀剂层施加到工件表面并图案化以形成凹陷区域和场区域。 然后,金属种子层沉积在工件表面上。 施加促进剂溶液,使得在金属种子层上形成促进剂膜。 加速膜的一部分从场区域选择性地去除,另外部分加速器膜在凹陷区域中。 然后,在凹陷区域中以铜加速的方式将铜电镀到工件上,铜板以加速的速度电镀,导致与凹陷区域中的铜相比,凹陷区域中的铜的厚度更大。 执行湿蚀刻以从场区域去除铜。 然后,从场区域去除抗蚀剂,导致粗铜线。
    • 28. 发明授权
    • Mixed lithium manganese oxide and lithium nickel cobalt oxide positive electrodes
    • 混合锂锰氧化物和锂镍钴氧化物正极
    • US06379842B1
    • 2002-04-30
    • US09413744
    • 1999-10-06
    • Steven T. Mayer
    • Steven T. Mayer
    • H01M458
    • H01M4/525H01M4/131H01M4/133H01M4/505H01M10/0525
    • Positive electrodes including a lithium nickel cobalt metal oxide are disclosed. The lithium nickel cobalt metal oxides have the general formula LixNiyCOzMnO2, where M is selected from the group consisting of aluminum, titanium, tungsten, chromium, molybdenum, magnesium, tantalum, silicon, and combinations thereof, x is between about 0 and about 1 and can be varied within this range by electrochemical insertion and extraction, the sum of y+z+n is about 1, n ranges between above 0 to about 0.25, y and z are both greater than 0, and the ratio z/y ranges from above 0 to about 1/3. Also disclosed are composite positive electrodes including the above-described lithium nickel cobalt metal oxides together with a lithium manganese metal oxide of the formula LixMn2−rM1rO4, where r is a value between 0 and 1 and M1 is chromium, titanium, tungsten, nickel, cobalt, iron, tin, zinc, zirconium, silicon, or a combination thereof.
    • 公开了包括锂镍钴金属氧化物的正电极。 锂镍钴金属氧化物具有通式LixNiyCOzMnO2,其中M选自铝,钛,钨,铬,钼,镁,钽,硅及其组合,x为约0至约1,以及 可以在该范围内通过电化学插入和提取而变化,y + z + n的和为约1,n在0至约0.25之间,y和z都大于0,z / y的比率范围为 高于0至约1/3。 还公开了包括上述锂镍钴金属氧化物和式LixMn2-rM1rO4的锂锰金属氧化物的复合正电极,其中r是0和1之间的值,M1是铬,钛,钨,镍, 钴,铁,锡,锌,锆,硅或其组合。
    • 30. 发明授权
    • Capacitor with a composite carbon foam electrode
    • 电容器用复合碳泡沫电极
    • US5898564A
    • 1999-04-27
    • US760852
    • 1996-12-02
    • Steven T. MayerRichard W. PekalaJames L. Kaschmitter
    • Steven T. MayerRichard W. PekalaJames L. Kaschmitter
    • H01B1/04H01G9/04
    • H01G11/24H01G11/30H01G11/34H01G11/42H01G11/46Y02E60/13
    • Carbon aerogels used as a binder for granularized materials, including other forms of carbon and metal additives, are cast onto carbon or metal fiber substrates to form composite carbon thin film sheets. The thin film sheets are utilized in electrochemical energy storage applications, such as electrochemical double layer capacitors (aerocapacitors), lithium based battery insertion electrodes, fuel cell electrodes, and electrocapacitive deionization electrodes. The composite carbon foam may be formed by prior known processes, but with the solid partides being added during the liquid phase of the process, i.e. prior to gelation. The other forms of carbon may include carbon microspheres, carbon powder, carbon aerogel powder or particles, graphite carbons. Metal and/or carbon fibers may be added for increased conductivity. The choice of materials and fibers will depend on the electrolyte used and the relative trade off of system resistivity and power to system energy.
    • 用作颗粒状材料(包括其他形式的碳和金属添加剂)的粘合剂的碳气凝胶被浇铸到碳或金属纤维基材上以形成复合碳薄膜片。 薄膜片用于电化学储能应用,例如电化学双层电容器(aerocapacitors),锂基电池插入电极,燃料电池电极和电容去离子电极。 复合碳泡沫可以通过先前已知的方法形成,但是在该方法的液相期间,即在凝胶化之前加入固体成分。 碳的其他形式可以包括碳微球,碳粉,碳气凝胶粉或石墨碳。 可以加入金属和/或碳纤维以增加导电性。 材料和纤维的选择将取决于所使用的电解质和系统电阻率和功率对系统能量的相对折衷。