会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 21. 发明授权
    • Pattern-print thin-film transistors with top gate geometry
    • 具有顶栅几何形状的图案印刷薄膜晶体管
    • US07884361B2
    • 2011-02-08
    • US12817127
    • 2010-06-16
    • William WongRene LujanEugene Chow
    • William WongRene LujanEugene Chow
    • H01L21/00
    • H01L29/41733H01L27/124H01L27/1285H01L27/1288H01L27/1292H01L29/42384H01L29/4908H01L29/66757
    • A self-aligned, thin-film, top-gate transistor and method of manufacturing same are disclosed. A first print-patterned mask is formed over a metal layer by digital lithography, for example by printing with a phase change material using a droplet ejector. The metal layer is then etched using the first print-patterned mask to form source and drain electrodes. A semiconductive layer and an insulative layer are formed thereover. A layer of photosensitive material is then deposited and exposed through the substrate, with the source and drain electrodes acting as masks for the exposure. Following development of the photosensitive material, a gate metal layer is deposited. A second print-patterned mask is then formed over the device, again by digital lithography. Etching and removal of the photosensitive material leaves the self-aligned top-gate electrode.
    • 公开了一种自对准薄膜顶栅晶体管及其制造方法。 通过数字光刻在金属层上形成第一印刷图案掩模,例如通过使用液滴喷射器用相变材料进行印刷。 然后使用第一印刷图案化掩模蚀刻金属层以形成源极和漏极。 在其上形成半导体层和绝缘层。 然后将一层感光材料沉积并暴露通过基底,源极和漏极用作曝光的掩模。 在感光材料的显影之后,沉积栅极金属层。 然后再次通过数字光刻法在器件上形成第二印刷图案掩模。 蚀刻和去除感光材料离开自对准顶栅电极。
    • 22. 发明申请
    • Patterned-print thin-film transistors with top gate geometry
    • 具有顶栅几何形状的图案印刷薄膜晶体管
    • US20070026585A1
    • 2007-02-01
    • US11193847
    • 2005-07-28
    • William WongRene LujanEugene Chow
    • William WongRene LujanEugene Chow
    • H01L21/84
    • H01L29/41733H01L27/124H01L27/1285H01L27/1288H01L27/1292H01L29/42384H01L29/4908H01L29/66757
    • A self-aligned, thin-film, top-gate transistor and method of manufacturing same are disclosed. A first print-patterned mask is formed over a metal layer by digital lithography, for example by printing with a phase change material using a droplet ejector. The metal layer is then etched using the first print-patterned mask to form source and drain electrodes. A semiconductive layer and an insulative layer are formed thereover. A layer of photosensitive material is then deposited and exposed through the substrate, with the source and drain electrodes acting as masks for the exposure. Following development of the photosensitive material, a gate metal layer is deposited. A second print-patterned mask is then formed over the device, again by digital lithography. Etching and removal of the photosensitive material leaves the self-aligned top-gate electrode.
    • 公开了一种自对准薄膜顶栅晶体管及其制造方法。 通过数字光刻在金属层上形成第一印刷图案掩模,例如通过使用液滴喷射器用相变材料进行印刷。 然后使用第一印刷图案化掩模蚀刻金属层以形成源极和漏极。 在其上形成半导体层和绝缘层。 然后将一层感光材料沉积并暴露通过基底,源极和漏极用作曝光的掩模。 在感光材料的显影之后,沉积栅极金属层。 然后再次通过数字光刻法在器件上形成第二印刷图案掩模。 蚀刻和去除感光材料离开自对准顶栅电极。
    • 24. 发明授权
    • Patterned-print thin-film transistors with top gate geometry
    • 具有顶栅几何形状的图案印刷薄膜晶体管
    • US07804090B2
    • 2010-09-28
    • US12018794
    • 2008-01-23
    • William WongRene LujanEugene Chow
    • William WongRene LujanEugene Chow
    • H01L29/04
    • H01L29/41733H01L27/124H01L27/1285H01L27/1288H01L27/1292H01L29/42384H01L29/4908H01L29/66757
    • A self-aligned, thin-film, top-gate transistor and method of manufacturing same are disclosed. A first print-patterned mask is formed over a metal layer by digital lithography, for example by printing with a phase change material using a droplet ejector. The metal layer is then etched using the first print-patterned mask to form source and drain electrodes. A semiconductive layer and an insulative layer are formed thereover. A layer of photosensitive material is then deposited and exposed through the substrate, with the source and drain electrodes acting as masks for the exposure. Following development of the photosensitive material, a gate metal layer is deposited. A second print-patterned mask is then formed over the device, again by digital lithography. Etching and removal of the photosensitive material leaves the self-aligned top-gate electrode.
    • 公开了一种自对准薄膜顶栅晶体管及其制造方法。 通过数字光刻在金属层上形成第一印刷图案掩模,例如通过使用液滴喷射器用相变材料进行印刷。 然后使用第一印刷图案化掩模蚀刻金属层以形成源极和漏极。 在其上形成半导体层和绝缘层。 然后将一层感光材料沉积并暴露通过基底,源极和漏极用作曝光的掩模。 在感光材料的显影之后,沉积栅极金属层。 然后再次通过数字光刻法在器件上形成第二印刷图案掩模。 蚀刻和去除感光材料离开自对准顶栅电极。
    • 27. 发明授权
    • Method and apparatus for processing information related to interactive web sites
    • 用于处理与交互式网站相关的信息的方法和装置
    • US08799463B1
    • 2014-08-05
    • US09693797
    • 2000-10-19
    • George SvedloffWilliam Wong
    • George SvedloffWilliam Wong
    • G06F15/173
    • H04L67/02G06Q30/06
    • A method for creating interactive web sites that are easy to modify is disclosed. The method uses a specific web server request handler system that examines each request to determine if a handler should be called to handle information related to the referring web page. Specifically, the server system examines the address of the referring web page to see if the server has a handler routine associated with the referring web page. If the server has a handler associated with the referring web page, then the server executes the handler routine to process any information in the current request, any state information, or any other information. After executing the handler routine, the server handles the current request. The handling of the current request may be affected by the processing performed by the handler routine associated with the referring web page.
    • 公开了一种用于创建易于修改的交互式网站的方法。 该方法使用特定的Web服务器请求处理程序系统来检查每个请求以确定是否应该调用处理程序来处理与引用网页有关的信息。 具体地,服务器系统检查引用网页的地址,以查看服务器是否具有与引用网页相关联的处理程序。 如果服务器具有与引用网页相关联的处理程序,则服务器执行处理程序例程以处理当前请求中的任何信息,任何状态信息或任何其他信息。 执行处理程序例程后,服务器处理当前请求。 当前请求的处理可能受到与引用网页相关联的处理程序执行的处理的影响。
    • 28. 发明授权
    • Hard disk controller which coordinates transmission of buffered data with a host
    • 与主机协调传输缓冲数据的硬盘控制器
    • US08127089B1
    • 2012-02-28
    • US12030173
    • 2008-02-12
    • Huy NguyenWilliam WongKha Nguyen
    • Huy NguyenWilliam WongKha Nguyen
    • G06F12/00
    • G06F5/065G06F3/061G06F3/0659G06F3/0674
    • The transmission of buffered data is coordinated between a storage medium and a host in response to a request from the host. One or more blocks of data are transferred from the storage medium to a buffer memory. One or more frames of data are transmitted from the buffer memory to the host, wherein the number of blocks ending in the frame is recorded in a blocks/frame register, and possibly also in a block count accumulator register. Buffer release pulses for releasing buffer space in memory are sent to the buffer memory, based on the number of blocks in the blocks/frame register, or the number of blocks accumulated in the block count accumulator register when a signal is received from the host. A pointer which points to the last block of data successfully transferred is updated in accordance with the buffer release pulses.
    • 响应于来自主机的请求,缓冲数据的传输在存储介质和主机之间协调。 一个或多个数据块从存储介质传送到缓冲存储器。 一个或多个数据帧从缓冲存储器发送到主机,其中以帧结束的块的数量被记录在块/帧寄存器中,并且还可能被记录在块计数累加器寄存器中。 基于块/帧寄存器中的块数或从主机接收到信号时累积在块计数累加器寄存器中的块的数量,将用于释放存储器中的缓冲器空间的缓冲器释放脉冲发送到缓冲存储器。 根据缓冲器释放脉冲更新指向成功传送的最后数据块的指针。