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21. 发明授权

US07897302B2 Error diffusion-derived sub-resolutional grayscale reticle 有权
标题翻译：误差扩散衍生的子解析灰度光栅
公开(公告)号：US07897302B2
公开(公告)日：2011-03-01
申请号：US12247130
申请日：2008-10-07
申请人： Bruce D. Ulrich , Yoshi Ono , Wei Gao
发明人： Bruce D. Ulrich , Yoshi Ono , Wei Gao
IPC分类号： G03F1/00 , G06F17/50
CPC分类号： G03F1/50 , G03F7/0005
摘要： A method is provided for forming an error diffusion-derived sub-resolutional grayscale reticle. The method forms at least one partial-light transmissive layer overlying a transparent substrate. At least one unit cell in formed in the transmissive layer. The unit cell is formed by selecting the number of reduced-transmission pixels in the unit cell, and forming a sub-pattern of reduced-transmission pixels in the unit cell. The unit cell is sub-resolutional at a first wavelength.
摘要翻译：提供了一种用于形成误差扩散衍生的子分辨灰度掩模版的方法。该方法形成了覆盖透明衬底的至少一个部分透光层。在透射层中形成至少一个单电池。通过选择单位单元中的缩小透射像素的数量，并且在单位单元中形成减少透射像素的子图案来形成单位单元。单元在第一波长处是次分辨的。

22. 发明授权

US07682761B2 Method of fabricating a grayscale mask using a wafer bonding process 失效
标题翻译：使用晶片接合工艺制造灰度掩模的方法
公开(公告)号：US07682761B2
公开(公告)日：2010-03-23
申请号：US11709008
申请日：2007-02-20
申请人： Wei Gao , Bruce D. Ulrich , Yoshi Ono
发明人： Wei Gao , Bruce D. Ulrich , Yoshi Ono
IPC分类号： G03F1/00
CPC分类号： G03F1/68 , G03F1/50 , G03F1/54
摘要： A method of fabricating a grayscale mask includes preparing a quartz wafer; depositing a layer of Si3N4 on the quartz wafer; depositing a layer of titanium/TEOS directly on the Si3N4 layer on the backside of the quartz wafer; removing the layer of Si3N4 from the front side of the quartz wafer; depositing a layer of SRO directly on the front side of the quartz wafer; patterning a microlens array on the SRO layer; etching the SRO layer to form a microlens array in the SRO layer; depositing a layer of titanium; patterning and etching the titanium layer; depositing a layer of SiOxNy on the SRO microlens array; CMP to planarize the layer of SiOxNy removing the titanium/TEOS layer from the backside of the quartz wafer; bonding the planarized SiOxNy to a quartz reticle plate; and etching to remove Si3N4 from the bonded structure to form a grayscale mask reticle.
摘要翻译：制造灰度掩模的方法包括制备石英晶片; 在石英晶片上沉积一层Si3N4; 在石英晶片的背面的Si 3 N 4层上直接沉积钛/ TEOS层; 从石英晶片的前侧去除Si 3 N 4层; 在石英晶片的正面上直接沉积SRO层; 在SRO层上构图微透镜阵列; 蚀刻SRO层以在SRO层中形成微透镜阵列; 沉积一层钛; 图案化和蚀刻钛层; 在SRO微透镜阵列上沉积一层SiOxNy; CMP平面化从石英晶片的背面去除钛/ TEOS层的SiO x N y层; 将平坦化的SiO x N y键合到石英光罩板上; 并蚀刻以从结合结构去除Si 3 N 4，以形成灰度掩模掩模版。

23. 发明授权

US07442568B1 Method to fabricate combined UV light emitter and phosphor for white light generation 有权
标题翻译：用于制造用于白光产生的组合的UV光发射器和磷光体的方法
公开(公告)号：US07442568B1
公开(公告)日：2008-10-28
申请号：US11588890
申请日：2006-10-27
申请人： Yoshi Ono , Wei Pan
发明人： Yoshi Ono , Wei Pan
IPC分类号： H01L21/00
CPC分类号： H05B33/14 , C09K11/025 , C09K11/565 , C09K11/65 , Y02B20/181 , Y10S977/847
摘要： A method of forming carbon nanotubes includes incorporating phosphors in the form of quantum dots, along with the beads of ZnO on carbon nanotubes (CNTs) to generate white light. The ability to form a high density of quantum dots in a small volume allows for a high probability of UV absorption and subsequent re-emission to generate visible radiation. The material and size of the quantum dots can be controlled by an atomic layer deposition (ALD) process and thermal cycle.
摘要翻译：形成碳纳米管的方法包括将量子点形式的磷光体与碳纳米管（CNT）上的ZnO珠一起并入以产生白光。在小体积内形成高密度量子点的能力允许UV吸收的高概率和随后的再发射以产生可见光。量子点的材料和尺寸可以通过原子层沉积（ALD）工艺和热循环来控制。

24. 发明申请

US20080102641A1 Grayscale reticle for precise control of photoresist exposure 失效
标题翻译：用于精确控制光刻胶曝光的灰度光罩
公开(公告)号：US20080102641A1
公开(公告)日：2008-05-01
申请号：US11588891
申请日：2006-10-27
申请人： Yoshi Ono , Bruce D. Ulrich , Pooran Chandra Joshi
发明人： Yoshi Ono , Bruce D. Ulrich , Pooran Chandra Joshi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G03F1/54 , G03F1/50 , Y10S438/942
摘要： A method of fabricating a grayscale reticle includes preparing a quartz substrate; depositing a layer of silicon-rich oxide on the quartz substrate; depositing a layer of silicon nitride as an oxidation barrier layer on the silicon-rich oxide layer; depositing and patterning a layer of photoresist; etching the silicon nitride layer with a pattern for the silicon nitride layer; removing the photoresist; cleaning the quartz substrate and the remaining layers; oxidizing the quartz substrate and the layers thereon, thereby converting the silicon-rich oxide layer to a transparent silicon dioxide layer; removing the remaining silicon nitride layer; forming the quartz substrate and the silicon dioxide thereon into a reticle; and using the reticle to pattern a microlens array.
摘要翻译：制造灰度标线的方法包括制备石英基片; 在石英衬底上沉积一层富硅氧化物; 在富硅氧化物层上沉积氮化硅层作为氧化阻挡层; 沉积和图案化一层光致抗蚀剂; 用氮化硅层的图案蚀刻氮化硅层; 去除光致抗蚀剂; 清洗石英衬底和其余层; 氧化石英衬底及其上的层，从而将富硅氧化物层转化为透明二氧化硅层; 去除剩余的氮化硅层; 在其上形成石英衬底和二氧化硅到掩模版中; 并使用掩模版对微透镜阵列进行图案化。

25. 发明申请

US20080026494A1 Method of fabricating a terbium-doped electroluminescence device via metal organic deposition processes 审中-公开
标题翻译：通过金属有机沉积工艺制造掺铒电致发光器件的方法
公开(公告)号：US20080026494A1
公开(公告)日：2008-01-31
申请号：US11494181
申请日：2006-07-26
申请人： Wei-Wei Zhuang , Yoshi Ono , Wei Gao , Tingkai Li
发明人： Wei-Wei Zhuang , Yoshi Ono , Wei Gao , Tingkai Li
IPC分类号： H01L21/00
CPC分类号： H05B33/10
摘要： A method of fabricating an electroluminescent device includes preparing a wafer and a doped-silicon oxide precursor solution. The doped-silicon oxide precursor solution is spin coated onto the wafer to form a doped-silicon oxide thin film on the wafer, which is baked at progressively increasing temperatures. The wafer is then rapidly thermally annealed, further annealed in a wet oxygen ambient atmosphere. A transparent top electrode is deposited on the doped-silicon oxide thin film, which is patterned, etched, and annealed. The doped-silicon oxide thin film and the wafer undergo a final annealing step to enhance electroluminescent properties.
摘要翻译：制造电致发光器件的方法包括制备晶片和掺杂的氧化硅前体溶液。将掺杂的氧化硅前体溶液旋涂在晶片上以在晶片上形成掺杂的氧化硅薄膜，其在逐渐升高的温度下烘烤。然后将晶片快速热退火，在湿氧环境气氛中进一步退火。透明的顶部电极沉积在掺杂的氧化硅薄膜上，其被图案化，蚀刻和退火。掺杂氧化硅薄膜和晶片进行最终退火步骤以增强电致发光性能。

26. 发明授权

US07297642B2 Sputter-deposited rare earth element-doped silicon oxide film with silicon nanocrystals for electroluminescence applications 失效
标题翻译：溅射沉积的稀土元素掺杂氧化硅膜与硅纳米晶体用于电致发光应用
公开(公告)号：US07297642B2
公开(公告)日：2007-11-20
申请号：US11334015
申请日：2006-01-18
申请人： Wei Gao , Tingkai Li , Robert A. Barrowcliff , Yoshi Ono , Sheng Teng Hsu
发明人： Wei Gao , Tingkai Li , Robert A. Barrowcliff , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L21/31
CPC分类号： H05B33/145 , H01L21/3115 , H01L31/03046 , Y02E10/544
摘要： A method is provided for forming a rare earth (RE) element-doped silicon (Si) oxide film with nanocrystalline (nc) Si particles. The method comprises: providing a first target of Si, embedded with a first rare earth element; providing a second target of Si; co-sputtering the first and second targets; forming a Si-rich Si oxide (SRSO) film on a substrate, doped with the first rare earth element; and, annealing the rare earth element-doped SRSO film. The first target is doped with a rare earth element such as erbium (Er), ytterbium (Yb), cerium (Ce), praseodymium (Pr), or terbium (Tb). The sputtering power is in the range of about 75 to 300 watts (W). Different sputtering powers are applied to the two targets. Also, deposition can be controlled by varying the effective areas of the two targets. For example, one of the targets can be partially covered.
摘要翻译：提供了一种用于形成具有纳米晶体（nc）Si颗粒的稀土（RE）元素掺杂硅（Si）氧化物膜的方法。该方法包括：提供嵌入有第一稀土元素的Si的第一靶; 提供Si的第二个目标; 共溅射第一和第二个目标; 在掺杂有第一稀土元素的衬底上形成富Si氧化硅（SRSO）膜; 并对稀土元素掺杂的SRSO膜退火。第一靶用铒（Er），镱（Yb），铈（Ce），镨（Pr）或铽（Tb）等稀土元素掺杂。溅射功率在约75至300瓦（W）的范围内。不同的溅射功率被应用于两个目标。此外，可以通过改变两个目标的有效面积来控制沉积。例如，其中一个目标可以被部分覆盖。

27. 发明申请

US20070238239A1 Rare earth element-doped oxide precursor with silicon nanocrystals 失效
标题翻译：具有硅纳米晶体的稀土元素掺杂氧化物前体
公开(公告)号：US20070238239A1
公开(公告)日：2007-10-11
申请号：US11224549
申请日：2005-09-12
申请人： Wei-Wei Zhuang , Yoshi Ono , Sheng Teng-Hsu , Tingkai Li
发明人： Wei-Wei Zhuang , Yoshi Ono , Sheng Teng-Hsu , Tingkai Li
IPC分类号： H01L21/8238
CPC分类号： H01L21/02156 , H01L21/02282 , H01L21/316
摘要： A method is provided for forming a rare earth element-doped silicon oxide (SiO2) precursor with nanocrystalline (nc) Si particles. In one aspect the method comprises: mixing Si particles into a first organic solvent, forming a first solution with a first boiling point; filtering the first solution to remove large Si particles; mixing a second organic solvent having a second boiling point, higher than the first boiling point, to the filtered first solution; and, fractionally distilling, forming a second solution of nc Si particles. The Si particles are formed by immersing a Si wafer into a third solution including hydrofluoric (HF) acid and alcohol, applying an electric bias, and forming a porous Si layer overlying the Si wafer. Then, the Si particles are mixed into the organic solvent by depositing the Si wafer into the first organic solvent, and ultrasonically removing the porous Si layer from the Si wafer.
摘要翻译：提供了用纳米晶体（nc）Si颗粒形成稀土元素掺杂的氧化硅（SiO 2）前体的方法。一方面，该方法包括：将Si颗粒混合到第一有机溶剂中，形成具有第一沸点的第一溶液; 过滤第一溶液以除去大的Si颗粒; 将具有高于第一沸点的第二沸点的第二有机溶剂与过滤的第一溶液混合; 并分馏，形成nc Si颗粒的第二溶液。通过将Si晶片浸入包括氢氟酸（HF）酸和醇的第三溶液中，施加电偏压并形成覆盖Si晶片的多孔Si层，形成Si颗粒。然后，通过将Si晶片沉积到第一有机溶剂中，将Si颗粒混入有机溶剂中，并从Si晶片超声波除去多孔Si层。

28. 发明申请

US20070193974A1 Method to manipulate selectivity of a metal oxide sensor 失效
标题翻译：操纵金属氧化物传感器选择性的方法
公开(公告)号：US20070193974A1
公开(公告)日：2007-08-23
申请号：US11361519
申请日：2006-02-23
申请人： John Conley , Yoshi Ono
发明人： John Conley , Yoshi Ono
IPC分类号： C03C25/68 , B44C1/22
CPC分类号： G01N33/0027
摘要： A method of selectively enhancing the sensitivity of a metal oxide sensor includes fabricating a ZnO sensor having a ZnO sensor element therein; and exposing the ZnO sensor element to a plasma stream.
摘要翻译：选择性提高金属氧化物传感器的灵敏度的方法包括制造其中具有ZnO传感器元件的ZnO传感器; 并将ZnO传感器元件暴露于等离子体流。

29. 发明授权

US07256426B2 Rare earth element-doped silicon/silicon dioxide lattice structure 失效
标题翻译：稀土元素掺杂硅/二氧化硅晶格结构
公开(公告)号：US07256426B2
公开(公告)日：2007-08-14
申请号：US11039463
申请日：2005-01-19
申请人： Tingkai Li , Wei Gao , Yoshi Ono , Sheng Teng Hsu
发明人： Tingkai Li , Wei Gao , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： C23C14/16 , C03C17/34 , C23C14/10 , C23C28/322 , C23C28/323 , C23C28/345 , C23C28/3455 , C23C28/42 , H01L21/02164 , H01L21/02266 , H01L21/0237 , H01L21/02532 , H01L21/02573 , H01L21/0259 , H01L21/02631 , H01L21/02667 , H01L21/31608 , H01L33/26
摘要： Provided are an electroluminescence (EL) device and corresponding method for forming a rare earth element-doped silicon (Si)/Si dioxide (SiO2) lattice structure. The method comprises: providing a substrate; DC sputtering a layer of amorphous Si overlying the substrate; DC sputtering a rare earth element; in response, doping the Si layer with the rare earth element; DC sputtering a layer of SiO2 overlying the rare earth-doped Si; forming a lattice structure; annealing; and, in response to the annealing, forming nanocrystals in the rare-earth doped Si having a grain size in the range of 1 to 5 nanometers (nm). In one aspect, the rare earth element and Si are co-DC sputtered. Typically, the steps of DC sputtering Si, DC sputtering the rare earth element, and DC sputtering the SiO2 are repeated 5 to 60 cycles, so that the lattice structure includes the plurality (5-60) of alternating SiO2 and rare earth element-doped Si layers.
摘要翻译：提供了一种用于形成稀土元素掺杂硅（Si）/二氧化硅（SiO 2）晶格结构的电致发光（EL）器件和相应的方法。该方法包括：提供衬底; DC溅射覆盖衬底的非晶硅层; 直流溅射稀土元素; 作为响应，用稀土元素掺杂Si层; DC溅射一层SiO 2，覆盖稀土掺杂的Si; 形成晶格结构; 退火; 并且响应于退火，在具有1至5纳米（nm）范围内的晶粒尺寸的稀土掺杂Si中形成纳米晶体。一方面，稀土元素和Si共溅射。通常，DC溅射Si，DC溅射稀土元素和DC溅射SiO 2的步骤重复5至60个循环，使得晶格结构包括多个（5-60）交替的SiO 2和稀土元素掺杂 Si层。

30. 发明授权

US07196383B2 Thin film oxide interface 失效
标题翻译：薄膜氧化物界面
公开(公告)号：US07196383B2
公开(公告)日：2007-03-27
申请号：US11046571
申请日：2005-01-28
申请人： Pooran Chandra Joshi , John W. Hartzell , Masahiro Adachi , Yoshi Ono
发明人： Pooran Chandra Joshi , John W. Hartzell , Masahiro Adachi , Yoshi Ono
IPC分类号： H01L29/772
CPC分类号： H01L29/66757 , H01L29/4908 , H01L29/66772
摘要： An oxide interface and a method for fabricating an oxide interface are provided. The method comprises forming a silicon layer and an oxide layer overlying the silicon layer. The oxide layer is formed at a temperature of less than 400° C. using an inductively coupled plasma source. In some aspects of the method, the oxide layer is more than 20 nanometers (nm) thick and has a refractive index between 1.45 and 1.47. In some aspects of the method, the oxide layer is formed by plasma oxidizing the silicon layer, producing plasma oxide at a rate of up to approximately 4.4 nm per minute (after one minute). In some aspects of the method, a high-density plasma enhanced chemical vapor deposition (HD-PECVD) process is used to form the oxide layer. In some aspects of the method, the silicon and oxide layers are incorporated into a thin film transistor.
摘要翻译：提供氧化物界面和制造氧化物界面的方法。该方法包括形成硅层和覆盖硅层的氧化物层。使用电感耦合等离子体源在低于400℃的温度下形成氧化物层。在该方法的一些方面，氧化物层的厚度大于20纳米（nm），折射率在1.45和1.47之间。在该方法的一些方面，通过等离子体氧化硅层形成氧化物层，以每分钟高达约4.4nm的速率产生等离子体氧化物（1分钟后）。在该方法的某些方面，使用高密度等离子体增强化学气相沉积（HD-PECVD）工艺来形成氧化物层。在该方法的一些方面，将硅和氧化物层结合到薄膜晶体管中。

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