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1. 发明申请

US20080191636A1 Nanotip Electrode Electroluminescence Device 有权
标题翻译：纳米线电极电致发光器件
公开(公告)号：US20080191636A1
公开(公告)日：2008-08-14
申请号：US12042983
申请日：2008-03-05
申请人： Sheng Teng Hsu , Fengyan Zhang , Gregory M. Stecker , Robert A. Barrowcliff
发明人： Sheng Teng Hsu , Fengyan Zhang , Gregory M. Stecker , Robert A. Barrowcliff
IPC分类号： H05B41/16 , H01J1/62
CPC分类号： H05B33/145
摘要： An electroluminescence (EL) device and a method are provided for fabricating said device with a nanotip electrode. The method comprises: forming a bottom electrode with nanotips; forming a Si phosphor layer adjacent the nanotips; and, forming a transparent top electrode. The Si phosphor layer is interposed between the bottom and top electrodes. The nanotips may have a tip base size of about 50 nanometers, or less, a tip height in the range of 5 to 50 nm, and a nanotip density of greater than 100 nanotips per square micrometer. Typically, the nanotips are formed from iridium oxide (IrOx) nanotips. A MOCVD process forms the Ir bottom electrode. The IrOx nanotips are grown from the Ir. In one aspect, the Si phosphor layer is a SRSO layer. In response to an SRSO annealing step, nanocrystalline SRSO is formed with nanocrystals having a size in the range of 1 to 10 nm.
摘要翻译：提供了一种电致发光（EL）器件和用于制造具有纳米尖端电极的所述器件的方法。该方法包括：形成具有纳米尖端的底部电极; 在所述纳米尖端附近形成Si磷光体层; 并形成透明的顶部电极。 Si荧光体层介于底部和顶部电极之间。纳米尖端可以具有约50纳米或更小的尖端基部尺寸，5至50nm范围内的尖端高度，以及每平方毫米大于100纳米尖端的纳米密度密度。通常，纳米尖端由氧化铱（IrOx）纳米尖端形成。 MOCVD工艺形成Ir底部电极。 IrOx纳米尖嘴从Ir生长。在一个方面，Si磷光体层是SRSO层。响应于SRSO退火步骤，形成具有1至10nm范围内的尺寸的纳米晶体的纳米晶SRSO。

2. 发明授权

US07438759B2 Ambient environment nanowire sensor 失效
公开(公告)号：US07438759B2
公开(公告)日：2008-10-21
申请号：US11264113
申请日：2005-11-01
申请人： Fengyan Zhang , Robert A. Barrowcliff , Jong-Jan Lee , Sheng Teng Hsu
发明人： Fengyan Zhang , Robert A. Barrowcliff , Jong-Jan Lee , Sheng Teng Hsu
IPC分类号： C30B1/02
CPC分类号： B81C1/00182 , B81B2201/0214 , Y10S977/712 , Y10S977/762
摘要： An ambient environment nanowire sensor and corresponding fabrication method have been provided. The method includes: forming a substrate such as Silicon (Si) or glass; growing nanowires; depositing an insulator layer overlying the nanowires; etching to expose tips of the nanowires; forming a patterned metal electrode, with edges, overlying the tips of the nanowires; and, etching to expose the nanowires underlying the electrode edges. The nanowires can be a material such as IrO2, TiO2, InO, ZnO, SnO2, Sb2O3, or In2O3, to mane just a few examples. The insulator layer can be a spin-on glass (SOG) or low-k dielectric. In one aspect, the resultant structure includes exposed nanowires grown from the doped substrate regions and an insulator core with embedded nanowires. In a different aspect, the method forms a growth promotion layer overlying the substrate. The resultant structure includes exposed nanowires grown from the selectively formed growth promotion layer.

3. 发明授权

US07364924B2 Silicon phosphor electroluminescence device with nanotip electrode 有权
标题翻译：具有纳米尖电极的硅荧光体电致发光器件
公开(公告)号：US07364924B2
公开(公告)日：2008-04-29
申请号：US11061946
申请日：2005-02-17
申请人： Sheng Teng Hsu , Fengyan Zhang , Gregory M. Stecker , Robert A. Barrowcliff
发明人： Sheng Teng Hsu , Fengyan Zhang , Gregory M. Stecker , Robert A. Barrowcliff
IPC分类号： H01L21/00
CPC分类号： H05B33/145
摘要： An electroluminescence (EL) device and a method are provided for fabricating said device with a nanotip electrode. The method comprises: forming a bottom electrode with nanotips; forming a Si phosphor layer adjacent the nanotips; and, forming a transparent top electrode. The Si phosphor layer is interposed between the bottom and top electrodes. The nanotips may have a tip base size of about 50 nanometers, or less, a tip height in the range of 5 to 50 nm, and a nanotip density of greater than 100 nanotips per square micrometer. Typically, the nanotips are formed from iridium oxide (IrOx) nanotips. A MOCVD process forms the Ir bottom electrode. The IrOx nanotips are grown from the Ir. In one aspect, the Si phosphor layer is a SRSO layer. In response to an SRSO annealing step, nanocrystalline SRSO is formed with nanocrystals having a size in the range of 1 to 10 nm.
摘要翻译：提供了一种电致发光（EL）器件和用于制造具有纳米尖端电极的所述器件的方法。该方法包括：形成具有纳米尖端的底部电极; 在所述纳米尖端附近形成Si磷光体层; 并形成透明的顶部电极。 Si荧光体层介于底部和顶部电极之间。纳米尖端可以具有约50纳米或更小的尖端基部尺寸，5至50nm范围内的尖端高度，以及每平方毫米大于100纳米尖端的纳米密度密度。通常，纳米尖端由氧化铱（IrOx）纳米尖端形成。 MOCVD工艺形成Ir底部电极。 IrOx纳米尖嘴从Ir生长。在一个方面，Si磷光体层是SRSO层。响应于SRSO退火步骤，形成具有1至10nm范围内的尺寸的纳米晶体的纳米晶SRSO。

4. 发明授权

US07208372B2 Non-volatile memory resistor cell with nanotip electrode 失效
标题翻译：带纳米尖电极的非易失性存储器电阻单元
公开(公告)号：US07208372B2
公开(公告)日：2007-04-24
申请号：US11039544
申请日：2005-01-19
申请人： Sheng Teng Hsu , Fengyan Zhang , Gregory M. Stecker , Robert A. Barrowcliff
发明人： Sheng Teng Hsu , Fengyan Zhang , Gregory M. Stecker , Robert A. Barrowcliff
IPC分类号： H01L21/06 , H01L21/461
CPC分类号： H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/1273 , H01L45/147 , H01L45/16 , H01L45/1675
摘要： A non-volatile memory resistor cell with a nanotip electrode, and corresponding fabrication method are provided. The method comprises: forming a first electrode with nanotips; forming a memory resistor material adjacent the nanotips; and, forming a second electrode adjacent the memory resistor material, where the memory resistor material is interposed between the first and second electrodes. Typically, the nanotips are iridium oxide (IrOx) and have a tip base size of about 50 nanometers, or less, a tip height in the range of 5 to 50 nm, and a nanotip density of greater than 100 nanotips per square micrometer. In one aspect, the substrate material can be silicon, silicon oxide, silicon nitride, or a noble metal. A metalorganic chemical vapor deposition (MOCVD) process is used to deposit Ir. The IrOx nanotips are grown from the deposited Ir.
摘要翻译：提供了具有纳米尖端电极的非易失性存储器电阻单元及相应的制造方法。该方法包括：形成具有纳米尖端的第一电极; 在所述纳米尖端附近形成记忆电阻材料; 并且形成与所述存储电阻材料相邻的第二电极，其中所述存储电阻材料置于所述第一和第二电极之间。通常，纳米针是氧化铱（IrOx），并且具有约50纳米或更小的尖端基底尺寸，在5至50nm范围内的尖端高度，以及每平方微米大于100纳米尖端的纳米密度密度。一方面，衬底材料可以是硅，氧化硅，氮化硅或贵金属。使用金属有机化学气相沉积（MOCVD）工艺沉积Ir。 IrOx纳米尖端从沉积的Ir生长。

5. 发明授权

US07635600B2 Photovoltaic structure with a conductive nanowire array electrode 失效
标题翻译：具有导电纳米线阵列电极的光伏结构
公开(公告)号：US07635600B2
公开(公告)日：2009-12-22
申请号：US11280423
申请日：2005-11-16
申请人： Fengyan Zhang , Robert A. Barrowcliff , Sheng Teng Hsu
发明人： Fengyan Zhang , Robert A. Barrowcliff , Sheng Teng Hsu
IPC分类号： H01L21/00
CPC分类号： H01L51/4213 , B82Y10/00 , H01L51/0046 , H01L51/0048 , H01L51/4226 , H01L51/4233 , H01L51/441 , Y02E10/52 , Y02E10/549
摘要： A photovoltaic (PV) structure is provided, along with a method for forming a PV structure with a conductive nanowire array electrode. The method comprises: forming a bottom electrode with conductive nanowires; forming a first semiconductor layer of a first dopant type (i.e., n-type) overlying the nanowires; forming a second semiconductor layer of a second dopant type, opposite of the first dopant type (i.e., p-type), overlying the first semiconductor layer; and, forming a top electrode overlying the second semiconductor layer. The first and second semiconductor layers can be a material such as a conductive polymer, a conjugated polymer with a fullerene derivative, and inorganic materials such as CdSe, CdS, Titania, or ZnO. The conductive nanowires can be a material such as IrO2, In2O3, SnO2, or indium tin oxide (ITO).
摘要翻译：提供光伏（PV）结构以及用于形成具有导电纳米线阵列电极的PV结构的方法。该方法包括：形成具有导电纳米线的底电极; 形成覆盖在纳米线上的第一掺杂剂型（即n型）的第一半导体层; 形成与所述第一掺杂剂类型（即，p型）相反的第二掺杂剂类型的第二半导体层，所述第二掺杂剂类型覆盖所述第一半导体层; 以及形成覆盖所述第二半导体层的顶部电极。第一和第二半导体层可以是诸如导电聚合物，具有富勒烯衍生物的共轭聚合物和诸如CdSe，CdS，二氧化钛或ZnO的无机材料的材料。导电纳米线可以是诸如IrO 2，In 2 O 3，SnO 2或氧化铟锡（ITO）的材料。

6. 发明授权

US06849467B1 MOCVD of TiO2 thin film for use as FeRAM H2 passivation layer 失效
标题翻译：用于FeRAM H2钝化层的TiO2薄膜的MOCVD
公开(公告)号：US06849467B1
公开(公告)日：2005-02-01
申请号：US10621863
申请日：2003-07-16
申请人： Tingkai Li , Wei Pan , Robert A. Barrowcliff , David R. Evans , Sheng Teng Hsu
发明人： Tingkai Li , Wei Pan , Robert A. Barrowcliff , David R. Evans , Sheng Teng Hsu
IPC分类号： H01L21/00 , H01L21/02 , H01L21/28 , H01L21/316 , H01L21/336 , H01L21/8242 , H01L21/8246 , H01L27/115
CPC分类号： H01L27/11502 , H01L21/28291 , H01L21/31604 , H01L27/11585 , H01L27/1159 , H01L28/57 , H01L29/6684
摘要： A method of forming an H2 passivation layer in an FeRAM includes preparing a silicon substrate; depositing a layer of TiOx thin film, where 0
摘要翻译：在FeRAM中形成H 2钝化层的方法包括制备硅衬底; 在大马士革结构上沉积一层TiOx薄膜，其中0

7. 发明授权

US07255745B2 Iridium oxide nanowires and method for forming same 失效
标题翻译：氧化铱纳米线及其形成方法
公开(公告)号：US07255745B2
公开(公告)日：2007-08-14
申请号：US10971330
申请日：2004-10-21
申请人： Fengyan Zhang , Robert A. Barrowcliff , Sheng Teng Hsu
发明人： Fengyan Zhang , Robert A. Barrowcliff , Sheng Teng Hsu
IPC分类号： C30B29/62
CPC分类号： H01L24/48 , C30B25/005 , C30B29/16 , C30B29/62 , H01L24/45 , H01L24/49 , H01L2224/05644 , H01L2224/05655 , H01L2224/05669 , H01L2224/43827 , H01L2224/45015 , H01L2224/45144 , H01L2224/45155 , H01L2224/45157 , H01L2224/45166 , H01L2224/45169 , H01L2224/45178 , H01L2224/45181 , H01L2224/45565 , H01L2224/45599 , H01L2224/45688 , H01L2224/48011 , H01L2224/48091 , H01L2224/4813 , H01L2224/48463 , H01L2224/4847 , H01L2224/48599 , H01L2224/49111 , H01L2224/49175 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01032 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/10253 , H01L2924/10271 , H01L2924/1033 , H01L2924/10335 , H01L2924/14 , H01L2924/20751 , Y10S977/762 , Y10S977/763 , Y10S977/811 , H01L2924/00014 , H01L2924/20651 , H01L2924/00 , H01L2924/01006
摘要： Iridium oxide (IrOx) nanowires and a method forming the nanowires are provided. The method comprises: providing a growth promotion film with non-continuous surfaces, having a thickness in the range of 0.5 to 5 nanometers (nm), and made from a material such as Ti, Co, Ni, Au, Ta, polycrystalline silicon (poly-Si), SiGe, Pt, Ir, TiN, or TaN; establishing a substrate temperature in the range of 200 to 600 degrees C.; introducing oxygen as a precursor reaction gas; introducing a (methylcyclopentadienyl)(1,5-cyclooctadiene)iridium(I) precursor; using a metalorganic chemical vapor deposition (MOCVD) process, growing IrOx nanowires from the growth promotion film surfaces. The IrOx nanowires have a diameter in the range of 100 to 1000 Å, a length in the range of 1000 Å to 2 microns, an aspect ratio (length to width) of greater than 50:1. Further, the nanowires include single-crystal nanowire cores covered with an amorphous layer having a thickness of less than 10 Å.
摘要翻译：提供氧化铱（IrOx）纳米线和形成纳米线的方法。该方法包括：提供具有0.5至5纳米（nm）范围内的厚度的非连续表面的生长促进膜，并由诸如Ti，Co，Ni，Au，Ta，多晶硅多晶硅），SiGe，Pt，Ir，TiN或TaN; 建立200〜600℃的基板温度。引入氧气作为前体反应气体; 引入（甲基环戊二烯基）（1,5-环辛二烯）铱（I）前体; 使用金属有机化学气相沉积（MOCVD）工艺，从生长促进膜表面生长IrOx纳米线。 IrOx纳米线的直径在100至1000埃的范围内，长度在1000埃至2微米之间，纵横比（长宽比）大于50:1。此外，纳米线包括覆盖有厚度小于Å的非晶层的单晶纳米线芯。

8. 发明授权

US07053403B1 Iridium oxide nanostructure 有权
标题翻译：氧化铱纳米结构
公开(公告)号：US07053403B1
公开(公告)日：2006-05-30
申请号：US11339876
申请日：2006-01-26
申请人： Fengyan Zhang , Gregory M. Stecker , Robert A. Barrowcliff , Sheng Teng Hsu
发明人： Fengyan Zhang , Gregory M. Stecker , Robert A. Barrowcliff , Sheng Teng Hsu
IPC分类号： H01L29/10 , H01L29/12
CPC分类号： H01L21/31111 , B81C1/00111 , B82Y10/00
摘要： A method is provided for patterning iridium oxide (IrOx) nanostructures. The method comprises: forming a substrate first region adjacent a second region; growing IrOx nanostructures from a continuous IrOx film overlying the first region; simultaneously growing IrOx nanostructures from a non-continuous IrOx film overlying the second region; selectively etching areas of the second region exposed by the non-continuous IrOx film; and, lifting off the IrOx nanostructures overlying the second region. Typically, the first region is formed from a first material and the second region from a second material, different than the first material. For example, the first material can be a refractory metal, or refractory metal oxide. The second material can be SiOx. The step of selectively etching areas of the second region exposed by the non-continuous IrOx film includes exposing the substrate to an etchant that is more reactive with the second material than the IrOx.
摘要翻译：提供了用于构图氧化铱（IrOx）纳米结构的方法。该方法包括：在第二区域附近形成衬底第一区域; 从覆盖第一区域的连续IrOx膜生长IrOx纳米结构; 同时从覆盖第二区域的非连续IrOx膜生长IrOx纳米结构; 选择性地蚀刻由非连续IrOx膜暴露的第二区域的区域; 并提升覆盖第二区域的IrOx纳米结构。通常，第一区域由第一材料形成，第二区域由不同于第一材料的第二材料形成。例如，第一种材料可以是难熔金属或难熔金属氧化物。第二种材料可以是SiOx。选择性地蚀刻由非连续IrOx膜暴露的第二区域的区域的步骤包括将衬底暴露于与IrOx比第二材料更具反应性的蚀刻剂。

9. 发明授权

US07022621B1 Iridium oxide nanostructure patterning 有权
标题翻译：氧化铱纳米结构图案
公开(公告)号：US07022621B1
公开(公告)日：2006-04-04
申请号：US11013804
申请日：2004-12-15
申请人： Fengyan Zhang , Gregory M. Stecker , Robert A. Barrowcliff , Sheng Teng Hsu
发明人： Fengyan Zhang , Gregory M. Stecker , Robert A. Barrowcliff , Sheng Teng Hsu
IPC分类号： H01L21/461
CPC分类号： H01L21/31111 , B81C1/00111 , B82Y10/00
摘要： A method is provided for patterning iridium oxide (IrOx) nanostructures. The method comprises: forming a substrate first region adjacent a second region; growing IrOx nanostructures from a continuous IrOx film overlying the first region; simultaneously growing IrOx nanostructures from a non-continuous IrOx film overlying the second region; selectively etching areas of the second region exposed by the non-continuous IrOx film; and, lifting off the IrOx nanostructures overlying the second region. Typically, the first region is formed from a first material and the second region from a second material, different than the first material. For example, the first material can be a refractory metal, or refractory metal oxide. The second material can be SiOx. The step of selectively etching areas of the second region exposed by the non-continuous IrOx film includes exposing the substrate to an etchant that is more reactive with the second material than the IrOx.
摘要翻译：提供了用于构图氧化铱（IrOx）纳米结构的方法。该方法包括：在第二区域附近形成衬底第一区域; 从覆盖第一区域的连续IrOx膜生长IrOx纳米结构; 同时从覆盖第二区域的非连续IrOx膜生长IrOx纳米结构; 选择性地蚀刻由非连续IrOx膜暴露的第二区域的区域; 并提升覆盖第二区域的IrOx纳米结构。通常，第一区域由第一材料形成，第二区域由不同于第一材料的第二材料形成。例如，第一种材料可以是难熔金属或难熔金属氧化物。第二种材料可以是SiOx。选择性地蚀刻由非连续IrOx膜暴露的第二区域的区域的步骤包括将衬底暴露于与IrOx比第二材料更具反应性的蚀刻剂。

10. 发明授权

US08242482B2 Nanotip electrode electroluminescence device 有权
标题翻译：纳米电极电致发光器件
公开(公告)号：US08242482B2
公开(公告)日：2012-08-14
申请号：US12042983
申请日：2008-03-05
申请人： Sheng Teng Hsu , Fengyan Zhang , Gregory M. Stecker , Robert A. Barrowcliff
发明人： Sheng Teng Hsu , Fengyan Zhang , Gregory M. Stecker , Robert A. Barrowcliff
IPC分类号： H01L31/072
CPC分类号： H05B33/145
摘要： An electroluminescence (EL) device and a method are provided for fabricating said device with a nanotip electrode. The method comprises: forming a bottom electrode with nanotips; forming a Si phosphor layer adjacent the nanotips; and, forming a transparent top electrode. The Si phosphor layer is interposed between the bottom and top electrodes. The nanotips may have a tip base size of about 50 nanometers, or less, a tip height in the range of 5 to 50 nm, and a nanotip density of greater than 100 nanotips per square micrometer. Typically, the nanotips are formed from iridium oxide (IrOx) nanotips. A MOCVD process forms the Ir bottom electrode. The IrOx nanotips are grown from the Ir. In one aspect, the Si phosphor layer is a SRSO layer. In response to an SRSO annealing step, nanocrystalline SRSO is formed with nanocrystals having a size in the range of 1 to 10 nm.
摘要翻译：提供了一种电致发光（EL）器件和用于制造具有纳米尖端电极的所述器件的方法。该方法包括：用纳米尖端形成底部电极; 在所述纳米尖端附近形成Si磷光体层; 并形成透明的顶部电极。 Si荧光体层介于底部和顶部电极之间。纳米尖端可以具有约50纳米或更小的尖端基部尺寸，5至50nm范围内的尖端高度，以及每平方毫米大于100纳米尖端的纳米密度密度。通常，纳米尖端由氧化铱（IrOx）纳米尖端形成。 MOCVD工艺形成Ir底部电极。 IrOx纳米尖嘴从Ir生长。在一个方面，Si磷光体层是SRSO层。响应于SRSO退火步骤，形成具有1至10nm范围内的尺寸的纳米晶体的纳米晶SRSO。

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