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    • 1. 发明申请
    • Rare earth element-doped oxide precursor with silicon nanocrystals
    • 具有硅纳米晶体的稀土元素掺杂氧化物前体
    • US20070238239A1
    • 2007-10-11
    • US11224549
    • 2005-09-12
    • Wei-Wei ZhuangYoshi OnoSheng Teng-HsuTingkai Li
    • Wei-Wei ZhuangYoshi OnoSheng Teng-HsuTingkai Li
    • H01L21/8238
    • H01L21/02156H01L21/02282H01L21/316
    • A method is provided for forming a rare earth element-doped silicon oxide (SiO2) precursor with nanocrystalline (nc) Si particles. In one aspect the method comprises: mixing Si particles into a first organic solvent, forming a first solution with a first boiling point; filtering the first solution to remove large Si particles; mixing a second organic solvent having a second boiling point, higher than the first boiling point, to the filtered first solution; and, fractionally distilling, forming a second solution of nc Si particles. The Si particles are formed by immersing a Si wafer into a third solution including hydrofluoric (HF) acid and alcohol, applying an electric bias, and forming a porous Si layer overlying the Si wafer. Then, the Si particles are mixed into the organic solvent by depositing the Si wafer into the first organic solvent, and ultrasonically removing the porous Si layer from the Si wafer.
    • 提供了用纳米晶体(nc)Si颗粒形成稀土元素掺杂的氧化硅(SiO 2)前体的方法。 一方面,该方法包括:将Si颗粒混合到第一有机溶剂中,形成具有第一沸点的第一溶液; 过滤第一溶液以除去大的Si颗粒; 将具有高于第一沸​​点的第二沸点的第二有机溶剂与过滤的第一溶液混合; 并分馏,形成nc Si颗粒的第二溶液。 通过将Si晶片浸入包括氢氟酸(HF)酸和醇的第三溶液中,施加电偏压并形成覆盖Si晶片的多孔Si层,形成Si颗粒。 然后,通过将Si晶片沉积到第一有机溶剂中,将Si颗粒混入有机溶剂中,并从Si晶片超声波除去多孔Si层。