专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20090029544A1 ADHESION AND MINIMIZING OXIDATION ON ELECTROLESS CO ALLOY FILMS FOR INTEGRATION WITH LOW K INTER-METAL DIELECTRIC AND ETCH STOP 失效
标题翻译：用于与低K金属介电和蚀刻停止集成的电解CO合金膜上的粘合和最小化氧化
公开(公告)号：US20090029544A1
公开(公告)日：2009-01-29
申请号：US12240744
申请日：2008-09-29
申请人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher D. Bencher , Mehul B. Naik
发明人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher D. Bencher , Mehul B. Naik
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76829 , H01L21/76846 , H01L21/76849 , H01L21/76862 , H01L21/76864
摘要： A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.
摘要翻译：一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，减少覆盖层上的氧化物形成，然后沉积电介质材料。一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，将覆盖层暴露于等离子体，将衬底加热到大于约100℃，以及沉积低介电常数材料。

22. 发明申请

US20080024762A1 RAMAN SPECTROSCOPY AS INTEGRATED CHEMICAL METROLOGY 失效
标题翻译：拉曼光谱作为一体化学计量学
公开(公告)号：US20080024762A1
公开(公告)日：2008-01-31
申请号：US11830202
申请日：2007-07-30
申请人： HONGBIN FANG , Josh Golden , Timothy Weidman , Yaxin Wang , Arulkumar Shanmugasundram
发明人： HONGBIN FANG , Josh Golden , Timothy Weidman , Yaxin Wang , Arulkumar Shanmugasundram
IPC分类号： G01N21/00
CPC分类号： G01N21/65
摘要： A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.
摘要翻译：公开了一种用于测量化学镀溶液中的金属溶液和还原剂溶液的浓度的方法。拉曼光谱法用于测量化学镀溶液混合在一起后每种溶液的浓度。通过在将溶液提供给电镀池之前测量每种溶液的浓度，可以调节各溶液的浓度，从而实现每种溶液的目标浓度。此外，每个溶液可以在与其他溶液混合之前使用拉曼光谱单独分析。基于混合前单个溶液的拉曼光谱测量，可以在混合之前调整组成每种溶液的各个组分，从而可以实现目标组分浓度。

23. 发明申请

US20070111519A1 INTEGRATED ELECTROLESS DEPOSITION SYSTEM 审中-公开
标题翻译：集成电沉积系统
公开(公告)号：US20070111519A1
公开(公告)日：2007-05-17
申请号：US11428230
申请日：2006-06-30
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Allen D'Ambra , Timothy Weidman , Michael Stewart , Eugene Rabinovich , Svetlana Sherman , Manoocher Birang , Yaxin Wang , Michael Yang , Bradley Hansen
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Allen D'Ambra , Timothy Weidman , Michael Stewart , Eugene Rabinovich , Svetlana Sherman , Manoocher Birang , Yaxin Wang , Michael Yang , Bradley Hansen
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , C23C18/1619 , C23C18/1653 , C23C18/168 , C23C18/1682 , C23C18/1685 , C23C18/1689 , C25D7/123 , C25D17/001 , H01L21/02063 , H01L21/02068 , H01L21/02087 , H01L21/28518 , H01L21/28562 , H01L21/67051 , H01L21/6719 , H01L21/6723 , H01L21/67751 , H01L21/68785 , H01L21/76814 , H01L21/76843 , H01L21/76856 , H01L21/76873 , H01L21/76874
摘要： Embodiments of the invention provide methods for depositing a material onto a surface of a substrate by using one or more electroless, electrochemical plating, CVD and/or ALD processes. Embodiments of the invention provide a method for depositing a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP process on a single substrate processing platform. Other aspects provide a method for depositing a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides a method for forming a capping layer over substrate interconnects. Methods include the use of a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.
摘要翻译：本发明的实施方案提供了通过使用一种或多种化学镀，CVD和/或ALD工艺将材料沉积到衬底的表面上的方法。本发明的实施方案提供了一种用于在基板上沉积种子层的方法，该方法具有无电解方法，并随后在单个基板处理平台上用ECP工艺填充基板上的互连特征。其它方面提供了一种用于在衬底上沉积种子层的方法，在衬底上填充互连特征，或者在衬底上顺序地沉积种子层和填充互连特征。一个实施例提供了一种在衬底互连上形成覆盖层的方法。方法包括使用蒸气干燥器进行基板的沉积前和沉积后清洁以及用于后沉积清洁的刷盒室。

24. 发明申请

US20070095367A1 Apparatus and method for atomic layer cleaning and polishing 审中-公开
标题翻译：用于原子层清洁和抛光的装置和方法
公开(公告)号：US20070095367A1
公开(公告)日：2007-05-03
申请号：US11262445
申请日：2005-10-28
申请人： Yaxin Wang , Fang Mei , Van Nguyen , Arulkumar Shanmugasundram , Dmitry Lubomirsky
发明人： Yaxin Wang , Fang Mei , Van Nguyen , Arulkumar Shanmugasundram , Dmitry Lubomirsky
IPC分类号： B08B7/04 , B08B3/00 , B08B7/00
CPC分类号： H01L21/67046
摘要： The present invention generally provides an apparatus and method of processing substrates to uniformly remove any residual contamination from the surface of a substrate by use of an appropriate cleaning chemistry and contact with a cleaning medium. In one embodiment, the cleaning medium, such as is a brush or a scrubbing component that is positioned in a cleaning module. In one embodiment, the process of cleaning the surface of a substrate W is completed by “scrubbing” the surface of the substrate while using a cleaning solution that is selected to chemically etch a material from the surface of the substrate. In one aspect, the amount of material removed from the surface of a substrate is only about 10-30 Angstroms (Å). In one embodiment, the substrate surface is cleaned by use of a scrubbing process that uses a fluid that doesn't react with the exposed materials on the surface of the substrate. The fluid is thus used to lubricate the surfaces in contact and to carry any abraded material away from the surface of the substrate. In one aspect, the fluid may be DI water. In one aspect, it may be desirable to add ultrasonic or megasonic agitation to the substrate during the cleaning process to help remove or dislodge material from the surface of the substrate.
摘要翻译：本发明总体上提供了一种加工基材的装置和方法，以通过使用适当的清洁化学品和与清洁介质的接触来均匀地除去基材表面的任何残余污染物。在一个实施例中，清洁介质，例如位于清洁模块中的刷子或擦洗部件。在一个实施例中，清洁衬底W的表面的过程通过“擦洗”衬底的表面而完成，同时使用选择用于从衬底的表面化学蚀刻材料的清洁溶液。在一个方面，从衬底的表面去除的材料的量仅为约10-30埃（）。在一个实施例中，通过使用使用不与衬底表面上暴露的材料反应的流体的洗涤过程来清洁衬底表面。因此，流体用于润滑接触表面并将任何磨损的材料携带离开基底的表面。在一个方面，流体可以是去离子水。在一个方面，可能期望在清洁过程中向基底添加超声波或兆声波搅拌以帮助从衬底的表面移除或移除材料。

25. 发明申请

US20060033678A1 Integrated electroless deposition system 审中-公开
标题翻译：集成无电沉积系统
公开(公告)号：US20060033678A1
公开(公告)日：2006-02-16
申请号：US11192993
申请日：2005-07-29
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Allen D'Ambra , Timothy Weidman , Eugene Rabinovich , Svetlana Sherman , Manoocher Birang , Yaxin Wang , Michael Yang , Bradley Hansen
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Allen D'Ambra , Timothy Weidman , Eugene Rabinovich , Svetlana Sherman , Manoocher Birang , Yaxin Wang , Michael Yang , Bradley Hansen
IPC分类号： G09G3/00 , H05H1/24 , C23C16/00
CPC分类号： H01L21/67167 , C23C16/06 , C23C16/34 , C23C16/4488 , C23C18/1632 , C23C18/1653 , H01L21/28556 , H01L21/288 , H01L21/6719 , H01L21/67207 , H01L21/6723 , H01L21/67742 , H01L21/67745 , H01L21/76843 , H01L21/76873 , H01L21/76877
摘要： Embodiments of the invention provide a cluster tool configured to deposit a material onto a substrate surface by using one or more electroless, electrochemical plating, CVD and/or ALD processing chambers. In one aspect, a ruthenium-containing catalytic layer is formed. Embodiments of the invention provide a hybrid deposition system configured to deposit a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP cell. Other aspects provide an electroless deposition system configured to deposit a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides an electroless deposition system configured to form a capping layer over substrate interconnects. The system includes a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.
摘要翻译：本发明的实施例提供了一种集群工具，其被配置为通过使用一个或多个化学镀，CVD和/或ALD处理室将材料沉积到衬底表面上。一方面，形成含钌催化剂层。本发明的实施例提供了一种混合沉积系统，其被配置为利用无电解方法将种子层沉积在衬底上，并随后用ECP单元填充衬底上的互连特征。其它方面提供一种无电镀沉积系统，其被配置为将衬底层沉积在衬底上，填充衬底上的互连特征，或者顺序地沉积衬底上的晶种层和填充互连特征。一个实施例提供了一种配置成在衬底互连上形成覆盖层的无电沉积系统。该系统包括蒸发干燥器，用于底物的沉积前和沉积后清洁以及用于后沉积清洁的刷盒室。

26. 发明授权

US06814814B2 Cleaning residues from surfaces in a chamber by sputtering sacrificial substrates 失效
标题翻译：通过溅射牺牲衬底清洁室内表面的残留物
公开(公告)号：US06814814B2
公开(公告)日：2004-11-09
申请号：US10109736
申请日：2002-03-29
申请人： Alan W. Collins , Feng Gao , Tetsuya Ishikawa , Padmanaban Krishnaraj , Yaxin Wang
发明人： Alan W. Collins , Feng Gao , Tetsuya Ishikawa , Padmanaban Krishnaraj , Yaxin Wang
IPC分类号： B08B312
CPC分类号： H01J37/32862 , B08B7/00 , C23C14/564 , C23C16/4405 , Y10S438/905 , Y10S438/906
摘要： In a method of cleaning process residues formed on surfaces in a substrate processing chamber, a sacrificial substrate comprising a sacrificial material is placed in the chamber, a sputtering gas is introduced into the chamber, and the sputtering gas is energized to sputter the sacrificial material from the substrate. The sputtered sacrificial material reacts with residues on the chamber surfaces to clean them. In one version, the sacrificial substrate comprises a silicon-containing material that when sputtered deposits silicon on the chamber walls that reacts with and cleans fluorine-containing species that are left behind by a chamber cleaning process.
摘要翻译：在清洗在基板处理室的表面上形成的工艺残留物的方法中，将包括牺牲材料的牺牲基板放置在室中，将溅射气体引入室中，并且将溅射气体通电以将牺牲材料从底物。溅射的牺牲材料与室表面上的残留物反应以清洁它们。在一个版本中，牺牲衬底包括含硅材料，当溅射时，在室壁上沉积硅，其通过室清洁过程与留下的含氟物质反应并清除含氟物质。

27. 发明授权

US06479100B2 CVD ruthenium seed for CVD ruthenium deposition 失效
标题翻译： CVD钌种子用于CVD钌沉积
公开(公告)号：US06479100B2
公开(公告)日：2002-11-12
申请号：US09827878
申请日：2001-04-05
申请人： Xiaoliang Jin , Christopher P. Wade , Xianzhi Tao , Elaine Pao , Yaxin Wang , Jun Zhao
发明人： Xiaoliang Jin , Christopher P. Wade , Xianzhi Tao , Elaine Pao , Yaxin Wang , Jun Zhao
IPC分类号： C23C1640
CPC分类号： C23C16/40 , C08F14/06 , C23C16/0281 , C23C16/18 , C23C16/56
摘要： The present invention provides a method of forming a ruthenium seed layer on a substrate comprising the steps of introducing a ruthenium-containing compound into a CVD apparatus; introducing oxygen into the CVD apparatus; maintaining an oxygen rich environment in the process chamber for the initial formation of a ruthenium oxide seed layer; vaporizing the ruthenium-containing compound; depositing the ruthenium oxide seed layer onto the substrate by chemical vapor deposition; and annealing the deposited ruthenium oxide seed layer in a gas ambient forming a ruthenium seed layer. Also provided is a method of depositing a ruthenium thin metal film using a metalorganic precursor onto a CVD ruthenium seed layer by metalorganic chemical vapor deposition.
摘要翻译：本发明提供了在基材上形成钌籽晶层的方法，包括将含钌化合物引入CVD装置的步骤; 将氧气引入CVD装置中; 在处理室中保持富氧环境以初始形成氧化钌种子层; 汽化含钌化合物; 通过化学气相沉积将氧化钌种子层沉积到衬底上; 并在形成钌种子层的气体环境中退火沉积的氧化钌种子层。还提供了通过金属有机化学气相沉积在金属钌晶种层上使用金属有机前体沉积钌金属薄膜的方法。

28. 发明授权

US06440495B1 Chemical vapor deposition of ruthenium films for metal electrode applications 失效
标题翻译：用于金属电极应用的钌膜的化学气相沉积
公开(公告)号：US06440495B1
公开(公告)日：2002-08-27
申请号：US09632497
申请日：2000-08-03
申请人： Christopher P. Wade , Elaine Pao , Yaxin Wang , Jun Zhao
发明人： Christopher P. Wade , Elaine Pao , Yaxin Wang , Jun Zhao
IPC分类号： C23C1606
CPC分类号： C23C16/18
摘要： The present invention provides a method of depositing ruthenium films on a substrate via liquid source chemical vapor deposition wherein the source material is liquid at room temperature and utilizing process conditions such that deposition of the ruthenium films occurs at a temperature in the kinetic-limited temperature regime. Also provided is a method of depositing a thin ruthenium film on a substrate by liquid source chemical vapor deposition using bis-(ethylcyclopentadienyl) ruthenium by vaporizing the bis-(ethylcyclopentadienyl) ruthenium at a vaporization temperature of about 100-300° C. to form a CVD source material gas, providing an oxygen source reactant gas and forming a thin ruthenium film on a substrate in a reaction chamber using the CVD source material gas and the oxygen source reactant gas at a substrate temperature of about 100-500° C.
摘要翻译：本发明提供了一种通过液体源化学气相沉积在基片上沉积钌膜的方法，其中源材料在室温下为液体并且利用工艺条件使得钌膜的沉积在动态限制温度范围内的温度下发生。还提供了一种通过使用双 - （乙基环戊二烯基）钌的液体源化学气相沉积在基板上沉积薄钌膜的方法，其通过在约100-300℃的蒸发温度下汽化双 - （乙基环戊二烯基）钌来形成 CVD源材料气体，在基板温度为约100-500℃下，使用CVD源材料气体和氧源反应气体，在反应室中的基板上提供氧源反应气体并形成薄钌膜。

29. 发明授权

US06383954B1 Process gas distribution for forming stable fluorine-doped silicate glass and other films 失效
标题翻译：用于形成稳定的氟掺杂硅酸盐玻璃等膜的工艺气体分布
公开(公告)号：US06383954B1
公开(公告)日：2002-05-07
申请号：US09361682
申请日：1999-07-27
申请人： Yaxin Wang , Diana Chan , Turgut Sahin , Tetsuya Ishikawa , Farhad Moghadam
发明人： Yaxin Wang , Diana Chan , Turgut Sahin , Tetsuya Ishikawa , Farhad Moghadam
IPC分类号： H01L2131
CPC分类号： H01L21/02274 , C23C16/401 , C23C16/455 , H01J37/3244 , H01L21/02126 , H01L21/02129 , H01L21/02131 , H01L21/31625 , H01L21/31629
摘要： A substrate processing system includes a housing defining a chamber for forming a film on the substrate surface of a substrate disposed within the chamber. The system includes a first plurality of nozzles that extend into the chamber for injecting a first chemical at a first distance from a periphery of the substrate surface, and a second plurality of nozzles that extend into the chamber for injecting a second chemical at a second distance from the periphery of the substrate surface. The second distance is substantially equal to or smaller than the first distance. In one embodiment, the first chemical contains a dielectric material and the second chemical contains dopant species which react with the first chemical to deposit a doped dielectric material on the substrate. Injecting the dopant species closer to the substrate surface than previously done ensures that the dopant species are distributed substantially uniformly over the substrate surface and the deposition of a stable doped dielectric layer.
摘要翻译：衬底处理系统包括限定用于在设置在腔室内的衬底的衬底表面上形成膜的腔室。该系统包括第一多个喷嘴，其延伸到腔室中，用于从衬底表面的周边第一距离处注入第一化学品;以及第二多个喷嘴，其延伸到室中，用于以第二距离注入第二化学品从基板表面的周边。第二距离基本上等于或小于第一距离。在一个实施例中，第一化学品包含介电材料，第二化学品含有与第一化学物质反应以在衬底上沉积掺杂电介质材料的掺杂剂物质。注入比以前更接近于衬底表面的掺杂剂物质确保掺杂剂物质基本均匀地分布在衬底表面上并沉积稳定的掺杂介电层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式