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    • 6. 发明授权
    • Method of forming a silicon nitride layer on a substrate
    • 在基板上形成氮化硅层的方法
    • US06559074B1
    • 2003-05-06
    • US10015713
    • 2001-12-12
    • Steven A. ChenXianzhi TaoShulin WangLee LuoKegang HuangSang H. Ahn
    • Steven A. ChenXianzhi TaoShulin WangLee LuoKegang HuangSang H. Ahn
    • H01L2131
    • C23C16/345H01L21/3185Y10S438/958
    • A silicon nitride layer is formed over transistor gates while the processing temperature is relatively high, typically at least 500° C., and the pressure is relatively high, typically at least 50 Torr, to obtain a relatively high rate of formation of the silicon nitride layer. Processing conditions are controlled so as to more uniformly form the silicon nitride layer. Generally, the ratio of the NH3 gas to the silicon-containing gas by volume is selected sufficiently high so that, should the surface have a low region between transistor gates which is less than 0.15 microns wide and have a height-to-width ratio of at least 1.0, as well as an entirely flat area of at least 5 microns by 5 microns, the layer forms at a rate of not more than 25% faster on the flat area than on a base of the low region.
    • 在晶体管栅极上形成氮化硅层,而处理温度相对较高,通常至少为500℃,压力相对较高,通常为至少50托,以获得较高的氮化硅形成速率 层。 控制处理条件以更均匀地形成氮化硅层。 通常,体积的NH 3气体与含硅气体的比例被选择得足够高,使得如果表面在小于0.15微米宽的晶体管栅极之间具有低区域,并且具有高度 - 宽度比 至少为1.0,以及至少5微米至5微米的完全平坦的区域,该层在平坦区域上比在低区域的基底上以不超过25%的速率形成。