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11. 发明专利

JP2006175442A Hydride gas removing method and apparatus 有权
标题翻译：氢气除去方法和装置
公开(公告)号：JP2006175442A
公开(公告)日：2006-07-06
申请号：JP2006041930
申请日：2006-02-20
申请人： Foundation For Advancement Of International Science , 財団法人国際科学振興財団
发明人： OMI TADAHIRO
IPC分类号： B01D53/46 , B01D53/34
摘要： PROBLEM TO BE SOLVED: To provide a hydride gas removing apparatus simple in construction, prevented from being clogged with particles produced and capable of completely removing a mixed gas containing a plurality of hydride gases to detoxify the gas, and a hydride gas removing method. SOLUTION: The hydride gas removing method is characterized in that the mixed gas containing at least two hydride gases is brought into contact with nickel fluoride and nickel for decomposition or/and adsorption of the gas to remove the hydride gas, and that a hydride gas of a group III element or group V element of the periodic table is brought into contact with nickel to decompose or/and adsorb the hydride gas and thus to remove the hydride gas. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种结构简单的氢化物气体去除装置，防止被产生的颗粒堵塞并能够完全除去含有多种氢化物气体的混合气体以使气体解毒，并且将氢化物气体去除方法。解决方案：氢化物气体去除方法的特征在于，含有至少两种氢化物气体的混合气体与氟化镍和镍接触以分解或吸附气体以除去氢化物气体，使元素周期表的III族元素或V族元素的氢化物气体与镍接触以分解或吸附氢化物气体，从而去除氢化物气体。版权所有（C）2006，JPO＆NCIPI

12. 发明专利

JP2004191789A Image information gathering device for substance structural analyses 审中-公开
公开(公告)号：JP2004191789A
公开(公告)日：2004-07-08
申请号：JP2002361523
申请日：2002-12-12
申请人： Foundation For Advancement Of International Science , Tomohei Sakabe , 知平坂部 , 財団法人国際科学振興財団
发明人： SAKABE TOMOHEI
IPC分类号： G01N23/20 , G01N23/207 , G01T1/00 , G03B42/02 , G21K4/00 , H04N1/04
CPC分类号： G01N23/207
摘要： PROBLEM TO BE SOLVED: To realize an image information gathering device for substance structure analysis capable of gathering time-division data by reading a plurality of pieces of image data successively at a high speed with high precision without any restriction on the number of frames.
SOLUTION: The image information gathering device 1 for substance structure analysis is equipped with a flexible belt 7 which is formed in a beltlike loop shape and can be carried along the length of the beltlike shape, a recording part 3 which records radiological image information by irradiating an accumulative phosphor sheet 6, which is formed in a beltlike loop shape and supported by the belt 7 and stores and records radiological image information, with radiation, a plurality of read parts 21 to 26 which read the recorded radiological image information by irradiating the accumulative phosphor sheet 6 with stimulating light, and an erasure part 5 which emits radiation energy remaining on the accumulative phosphor sheet 6 before the recording part 3 records new radiological image information on the accumulative phosphor sheet 6 after the radiological image information is read.
COPYRIGHT: (C)2004,JPO&NCIPI

13. 发明专利

JP2004174466A Method of cleaning arsenic-, selenium- and chromium-polluted soil by ultrasonic irradiation 审中-公开
公开(公告)号：JP2004174466A
公开(公告)日：2004-06-24
申请号：JP2002347066
申请日：2002-11-29
申请人： Foundation For Advancement Of International Science , National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所 , 財団法人国際科学振興財団
发明人： TOKUNAGA SHUZO , FURUKAWA MAKOTO
IPC分类号： B09C1/02 , B01J19/10 , B09C1/08
摘要： PROBLEM TO BE SOLVED: To provide a method of cleaning a hazardous substance-polluted soil that reduces remarkably environmental risks, scarcely causes damage to the soil, and enables its reclamation, by extracting and removing efficiently hazardous substances in the soil.
SOLUTION: The method of cleaning a hazardous substance-polluted soil comprises cleaning the hazardous substance-polluted soil by using an aqueous solution containing a phosphate, wherein the cleaning is performed under ultrasonic irradiation.
COPYRIGHT: (C)2004,JPO

14. 发明专利

JP2013012768A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2013012768A
公开(公告)日：2013-01-17
申请号：JP2012194693
申请日：2012-09-05
申请人： Tohoku Univ , 国立大学法人東北大学 , Foundation For Advancement Of International Science , 公益財団法人国際科学振興財団
发明人： OMI TADAHIRO , TERAMOTO AKINOBU , KURODA MICHIHITO
IPC分类号： H01L29/786 , H01L21/336 , H01L21/8234 , H01L21/8238 , H01L27/08 , H01L27/088 , H01L27/092
摘要： PROBLEM TO BE SOLVED: To solve such a problem that, in an inversion-type transistor, an intrinsic-type transistor and an accumulation-type transistor of an accumulation layer current controlled type of a semiconductor layer, variation in threshold voltage is increased in a miniature generation by statistical variation in an impurity atom concentration, therefor making it hard to keep the reliability of an LSI.SOLUTION: A bulk-current controlled accumulation type transistor is obtained, the transistor being formed by controlling the film thickness and the impurity atomic concentration of a semiconductor layer so that the thickness of a depletion layer becomes larger than the film thickness of the semiconductor layer. By making the film thickness of the semiconductor layer to be 100 nm and the impurity concentration to be higher than 2×10[cm], for example, the standard deviation of variation in threshold value can be made smaller than variation in power source voltage.
摘要翻译：解决的问题为了解决这样一个问题，在反型型晶体管中，本征型晶体管和累积层电流控制型半导体层的累积型晶体管，阈值电压的变化是通过杂质原子浓度的统计学变化在微型产生中增加，从而难以保持LSI的可靠性。解决方案：通过控制半导体层的膜厚度和杂质原子浓度形成晶体管，从而使耗尽层的厚度大于薄膜厚度半导体层。通过使半导体层的膜厚为100nm，杂质浓度高于2×10 =“POST”> 3 < / SP>]，例如，可以使阈值的变化的标准偏差小于电源电压的变化。版权所有（C）2013，JPO＆INPIT

15. 发明专利

JP2010109385A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2010109385A
公开(公告)日：2010-05-13
申请号：JP2010006274
申请日：2010-01-14
申请人： Foundation For Advancement Of International Science , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , NITTA TAKEHISA , INO KAZUHIDE , SHINOHARA HISAKUNI
IPC分类号： H01L29/78 , H01L21/265 , H01L21/28
摘要： PROBLEM TO BE SOLVED: To provide a device structure changing the surface of a metallic gate electrode into a metallic insulating film at a low temperature and improving the reliability of devices such as a circuit and a system, and a method for manufacturing the device structure.
SOLUTION: In a semiconductor device, a gate electrode for a MOS device is formed by using metal, the sidewall of the MOS device is modified to the metallic insulating film and the reliability of the device is enhanced. The superior metallic insulating film is formed at the low temperature.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在低温下将金属栅电极的表面改变为金属绝缘膜并提高诸如电路和系统的装置的可靠性的装置结构，以及制造方法设备结构。解决方案：在半导体器件中，通过使用金属形成用于MOS器件的栅电极，MOS器件的侧壁被修改为金属绝缘膜，并且器件的可靠性得到提高。优良的金属绝缘膜在低温下形成。版权所有（C）2010，JPO＆INPIT

16. 发明专利

JP2009267195A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2009267195A
公开(公告)日：2009-11-12
申请号：JP2008116701
申请日：2008-04-28
申请人： Foundation For Advancement Of International Science , Tohoku Univ , 国立大学法人東北大学 , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , TERAMOTO AKINOBU , KURODA MICHIHITO
IPC分类号： H01L29/786 , H01L21/8238 , H01L27/08 , H01L27/092
CPC分类号： H01L27/1203 , H01L27/0883 , H01L27/092 , H01L29/045 , H01L29/458 , H01L29/78654 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To solve the problem that the reliability of an LSI is hardly maintained because the variation in threshold voltage becomes large in a microfabrication generation due to statistical variation in concentration in impurity atoms in an Inversion-type transistor, an Intrinsic-type transistor and a storage layer current control Accumulation-type transistor of a semiconductor layer.
SOLUTION: A bulk current control Accumulation-type transistor can be obtained by controlling the film thickness of the semiconductor layer and the concentration in impurity atoms so that the thickness of a depletion layer may be larger than the film thickness of the semiconductor layer. For example, the film thickness of the semiconductor layer is set to 100 nm and the impurity concentration is set higher than 2×10
17 [cm
-3 ], thereby making the standard deviation of variation in threshold voltage smaller than the variation in power supply voltage.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题为了解决由于反相型晶体管中的杂质原子的浓度的统计学变化而导致的微细加工生成中阈值电压的变化变大而难以维持LSI的可靠性的问题，本征型晶体管和存储层电流控制半导体层的累积型晶体管。解决方案：可以通过控制半导体层的膜厚度和杂质原子的浓度来获得体电流控制累积型晶体管，使得耗尽层的厚度可以大于半导体层的膜厚度。例如，将半导体层的膜厚设定为100nm，将杂质浓度设定为高于2×10 [cm 3〜SP 3]，从而使阈值电压变化的标准偏差小于电源电压的变化。版权所有（C）2010，JPO＆INPIT

17. 发明专利

JP2009266967A Ferroelectric film, semiconductor device having ferroelectric film, and method of manufacturing the same 审中-公开
标题翻译：电磁膜，具有电磁膜的半导体器件及其制造方法
公开(公告)号：JP2009266967A
公开(公告)日：2009-11-12
申请号：JP2008112994
申请日：2008-04-23
申请人： Foundation For Advancement Of International Science , Tohoku Univ , 国立大学法人東北大学 , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , TAKAHASHI ICHIRO
IPC分类号： H01L21/8246 , C23C14/08 , C23C14/58 , H01L21/316 , H01L27/105
CPC分类号： H01L21/28291 , C23C14/024 , C23C14/08 , C23C14/5826 , H01G7/06 , H01J37/32192 , H01J37/32724 , H01J2237/2001 , H01L21/31691 , H01L28/55 , H01L29/78391
摘要： PROBLEM TO BE SOLVED: To provide a ferroelectric film enabling more miniaturization and more stable operation than the film in the prior art, and having excellent adhesiveness with a base, to provide a semiconductor device using the ferroelectric film and a method of manufacturing the semiconductor device, and to provide a ferroelectric device using the ferroelectric film.
SOLUTION: The semiconductor device 71 has a substrate 55, an insulator 56, an yttrium oxide film 66, a ferroelectric film (STN film) 57 and an upper electrode 62. The yttrium oxide film 66 is used as a base in crystallizing the ferroelectric film (STN film) 57. The yttrium oxide film 66 contains oxygen, and its lattice information is approximate to the crystal of the ferroelectric film (STN film) 57. Accordingly, when the STN is crystallized on the yttrium oxide film 66, the ferroelectric film (STN film) 57 having no oxygen loss and ≥200 kV/cm anti-electric field can be obtained.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种铁电膜，其能够比现有技术中的膜更加小型化和更稳定的操作，并且与基底具有优异的粘合性，以提供使用该铁电体膜的半导体器件和制造方法并且提供使用铁电体膜的铁电体元件。解决方案：半导体器件71具有衬底55，绝缘体56，氧化钇膜66，铁电体膜（STN膜）57和上电极62.氧化钇膜66用作结晶中的碱铁电体膜（STN膜）57。氧化钇膜66含有氧，其晶格信息接近铁电体膜（STN膜）57的晶体。因此，当STN在氧化钇膜66上结晶时，可以获得没有氧损失的强电介质膜（STN膜）57和≥200kV/ cm的抗电场。版权所有（C）2010，JPO＆INPIT

18. 发明专利

JP2009177178A Process system 有权
标题翻译：过程系统
公开(公告)号：JP2009177178A
公开(公告)日：2009-08-06
申请号：JP2009008675
申请日：2009-01-19
申请人： Foundation For Advancement Of International Science , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , NITTA TAKEHISA , HIRAYAMA MASAKI , MORII AKIO
IPC分类号： H01L21/31 , B01J3/00 , C23C16/455 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a process system which can uniformize the flow of gas and the form of a plasma, to provide a small processing system by the occupation area of the device, to reduce the loss of high-frequency power put in a high-frequency plasma process, and to generate and maintain the plasma efficiently. SOLUTION: The processing system has a processing chamber 403, provided on the upper part of a transfer chamber 402 via a gate 416 (Figure 4), a stage 406, which is sealed from the outside and has a mounting part 412 for mounting a material 415 to be treated, a means 410 for making the mounting part 412 of the stage 406 move, in such a way that the part 412 goes in and out between the chambers 402 and the processing chamber 403 via the gate 416, while the chamber 402 is sealed from the outside, and means 413 and 414 for sealing the chambers 402 and the processing chamber 403, when the mounting part 412 is inside the processing chamber 403. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供可以使气体流动和等离子体的形式均匀化的处理系统，以通过设备的占用区域提供小的处理系统，以减少高频功率的损失投入高频等离子体工艺，有效地生成和维持等离子体。解决方案：处理系统具有经由门416（图4）设置在传送室402的上部的处理室403，其从外部密封并具有安装部分412，安装部分412用于安装要处理的材料415，用于使台架406的安装部分412移动的装置410以使得部件412经由门416进入室402和处理室403之间进出的方式，同时当安装部分412位于处理室403内部时，腔室402与外部密封，以及用于密封腔室402和处理室403的装置413和414.（C）2009，JPO＆INPIT

19. 发明专利

JP2009117373A Plasma device 有权
标题翻译：等离子体装置
公开(公告)号：JP2009117373A
公开(公告)日：2009-05-28
申请号：JP2009000067
申请日：2009-01-05
申请人： Foundation For Advancement Of International Science , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , NITTA TAKEHISA , HIRAYAMA MASAKI , TAKANO HARUYUKI , KAIHARA TATSU
IPC分类号： H05H1/46 , C23C16/511 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/316
CPC分类号： H01J37/32238 , C23C16/511 , H01J37/32192 , H01J37/3244 , H01L21/02115 , H01L21/0212 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02197 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02274 , H01L21/31612 , H01L21/31625 , H01L21/31675 , H01L21/31691
摘要： PROBLEM TO BE SOLVED: To provide a plasma device usable in an etching plasma process and other plasma treatment for exciting uniform high-density plasma in a small space of a container over a large area where plasma potential is low to uniformly form a high-quality thin film on a large-area substrate at a low temperature and a high speed. SOLUTION: The plasma device includes a vacuum container 5301, a material gas introduction port 5302 required for generating plasma in the container, and a vacuum pump 5303 for exhausting material gas introduced into the container, wherein an antenna 5305 is provided outside the container for emitting microwaves and an electrode 5306 is provided inside the container for a treated base body 5308 to be placed thereon. Sideways from a film forming space above the substrate 5308, an exhaust space is provided which is directly connected to the suction port of the vacuum pump 5303. A width W of the exhaust space is twice a height (a) of the film forming space. The width W which is twice the height (a) sharply improves the uniformity of a gas flow. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供可用于蚀刻等离子体工艺和其他等离子体处理的等离子体装置，用于在等离子体电位低的大面积上在容器的小空间中激发均匀的高密度等离子体，以均匀地形成高品质薄膜在大面积基板上的低温和高速度。解决方案：等离子体装置包括真空容器5301，在容器中产生等离子体所需的材料气体导入口5302，以及用于排出导入容器的材料气体的真空泵5303，其中天线5305设置在用于发射微波的容器和电极5306设置在用于待处理的基体5308的容器内，以便放置在其上。从衬底5308上方的膜形成空间侧向设置有直接连接到真空泵5303的吸入口的排气空间。排气空间的宽度W是成膜空间的高度（a）的两倍。高度（a）的两倍的宽度W急剧地改善气流的均匀性。版权所有（C）2009，JPO＆INPIT

20. 发明专利

JP2008147365A Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2008147365A
公开(公告)日：2008-06-26
申请号：JP2006332003
申请日：2006-12-08
申请人： Foundation For Advancement Of International Science , Tohoku Univ , 国立大学法人東北大学 , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , TERAMOTO AKINOBU , TANAKA KOTARO
IPC分类号： H01L29/12 , H01L21/318 , H01L21/336 , H01L29/78
CPC分类号： H01L21/049 , H01J37/32192 , H01L29/1608 , H01L29/518 , H01L29/6606 , H01L29/66068 , H01L29/7802
摘要： PROBLEM TO BE SOLVED: To solve the problem that a gate oxide film having good electrical characteristics can not be obtained when a gate insulating film is formed on an SiC substrate according to a usual silicon oxide film forming technology.
SOLUTION: A film having smaller hysteresis and a higher breakdown voltage can be obtained by decreasing the carbon content in the gate insulating film on the SiC substrate. Accordingly, after a silicon oxide film is formed on the SiC substrate using a plasma processing apparatus, the gate insulating film having excellent electrical characteristics can be obtained by exposing the formed silicon oxide film to radicals each containing a nitrogen atom to reform it.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题为了解决在通常的氧化硅膜形成技术中在SiC衬底上形成栅极绝缘膜时不能获得具有良好电特性的栅极氧化膜的问题。解决方案：通过降低SiC衬底上的栅极绝缘膜中的碳含量，可以获得具有较小磁滞和较高击穿电压的膜。因此，在使用等离子体处理装置在SiC衬底上形成氧化硅膜之后，可以通过将形成的氧化硅膜暴露于含有氮原子的基团进行改性来获得具有优异的电特性的栅极绝缘膜。版权所有（C）2008，JPO＆INPIT

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