专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2008132489A Vacuum exhausting method and vacuum exhausting apparatus 审中-公开
标题翻译：真空排气方法和真空排气装置
公开(公告)号：JP2008132489A
公开(公告)日：2008-06-12
申请号：JP2007312914
申请日：2007-12-03
申请人： Foundation For Advancement Of International Science , 財団法人国際科学振興財団
发明人： SHIRAI YASUYUKI , HASHIMOTO TAIJI , INO KAZUHIDE , OMI TADAHIRO , NITTA TAKEHISA
IPC分类号： B01J3/02 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To make possible the recycling of exhaust gas components in manufacturing process by cooling, liquefaction, and recovery, and to use toxic or useful gases without disposal, and to dramatically reduce the maintenance frequency of an exhaust system by combining such a recovery method with a vacuum exhaust system.
SOLUTION: In the gas recovering apparatus, followings are disposed downstream from the chamber in an exhaust line; adsorption tubes for adsorbing one or more exhaust gas components within the exhaust gas from a chamber, or reaction tubes for directly degrading such components, a means for introducing gas which is able to react to the exhaust gas components upstream from the adsorption tubes or the reaction tubes, and cooling tubes for liquefying and recovering exhaust gases from the adsorption tubes or the reaction tubes. In addition, the present invention also relates to a vacuum exhausting method in which, in the vacuum apparatus some type of gas is continuously caused to flow within the chamber, and relates to a vacuum exhausting apparatus, in which a mechanism is provided for introducing gas between a vacuum exhausting pump and the chamber.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过冷却，液化和回收，在制造过程中废气组分的回收利用，并且无需处理就可以使用有毒或有用的气体，并大大减少排气系统的维护频率将这种回收方法与真空排气系统结合。解决方案：在气体回收设备中，在排气管线中的下游设置以下部件：用于吸附来自室的废气中的一种或多种废气组分的吸附管或用于直接降解这些组分的反应管，用于引入能够与吸附管上游的排气组分反应的气体或反应的装置管和用于液化和回收来自吸附管或反应管的废气的冷却管。此外，本发明还涉及一种真空排气方法，其中在真空装置中，某种类型的气体连续地在室内流动，并且涉及一种真空排气装置，其中设置有用于引入气体的机构在真空排气泵和室之间。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2010161392A Apparatus for manufacturing semiconductor or liquid crystal and method of vaporizing liquid material gas 有权
标题翻译：用于制造半导体或液晶的装置和液体气体气体的蒸发方法
公开(公告)号：JP2010161392A
公开(公告)日：2010-07-22
申请号：JP2010040549
申请日：2010-02-25
申请人： Foundation For Advancement Of International Science , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , NITTA TAKEHISA
IPC分类号： H01L21/31 , C23C16/448
摘要： PROBLEM TO BE SOLVED: To provide an apparatus capable of rapidly manufacturing a semiconductor or liquid crystal display which has high speed, reproducibility, and high uniformity.
SOLUTION: The manufacture by a feed forward system is allowed, which includes a control system for a plurality of gas partial pressures and pressure in an apparatus which can supply given gas which exceeds set flow rate for given time upstream of the apparatus and which can keep a plurality of gas partial pressures and pressure in the apparatus constant by linking the control system to a discharge rate variable vacuum discharge apparatus or an opening variable fluid control valve provided downstream of the apparatus.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够快速制造具有高速度，再现性和高均匀性的半导体或液晶显示器的装置。解决方案：允许通过前馈系统的制造，其包括在装置中可以提供多个气体分压和压力的控制系统，该设备可以在装置的上游给定时间内提供超过设定流量的给定气体，其可以通过将控制系统连接到设置在设备下游的排出速率可变真空排放装置或可开启的可变流体控制阀，使设备中的多个气体分压和压力恒定。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2008277306A Plasma device 审中-公开
标题翻译：等离子体装置
公开(公告)号：JP2008277306A
公开(公告)日：2008-11-13
申请号：JP2008151121
申请日：2008-06-09
申请人： Foundation For Advancement Of International Science , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , NITTA TAKEHISA , HIRAYAMA MASAKI , TAKANO HARUYUKI , KAIHARA TATSU
IPC分类号： H05H1/46 , C23C16/44 , C23C16/511 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/316
CPC分类号： H01J37/32238 , C23C16/511 , H01J37/32192 , H01J37/3244 , H01L21/02115 , H01L21/0212 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02197 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02274 , H01L21/31612 , H01L21/31625 , H01L21/31675 , H01L21/31691
摘要： PROBLEM TO BE SOLVED: To provide a plasma device exciting uniform and high-density plasma in a large area, uniformly supplying raw gas, and quickly removing reaction by-products gas. SOLUTION: Reference numerals 4406, 4407, 4408, 4410, 4412, 4413 and 4414 indicate a vacuum container, an electrode I, a substrate, a shower plate, an electrode II, a gas introduction port, a magnetic field application means and a vacuum pump, respectively. A dipole ring magnet with a plurality of permanent magnets annularly arranged is adopted for the magnetic field application means 4413. The gas introduced from the gas introduction port 4412 is discharged to a treatment space from a number of pores formed at the shower plate 4410. The introduced gas and reaction product gas discharged from the substrate surface pass through a space between the magnetic field application means 4413a and 4413b at the side of the substrate and are discharged to the outside from a plurality of the vacuum pumps 4414. There is provided a comparatively wide space on an upper part of the pumps 4414 so as not to reduce the conductance of the gasses. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供在大面积上激发均匀和高密度等离子体的等离子体装置，均匀地供应原料气体，并快速除去反应副产物气体。解决方案：附图标记4406,4407,4408,4410,4412,4413和4414表示真空容器，电极I，基板，喷淋板，电极II，气体导入口，磁场施加装置和真空泵。磁场施加装置4413采用具有多个环形排列的永久磁铁的偶极环磁体。从气体导入口4412导入的气体从喷淋板4410上形成的多个孔排出到处理空间。从基板表面排出的引入气体和反应产物气体通过基板一侧的磁场施加装置4413a和4413b之间的空间，并从多个真空泵4414排出到外部。在泵4414的上部的宽的空间，以便不降低气体的电导。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2010109385A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2010109385A
公开(公告)日：2010-05-13
申请号：JP2010006274
申请日：2010-01-14
申请人： Foundation For Advancement Of International Science , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , NITTA TAKEHISA , INO KAZUHIDE , SHINOHARA HISAKUNI
IPC分类号： H01L29/78 , H01L21/265 , H01L21/28
摘要： PROBLEM TO BE SOLVED: To provide a device structure changing the surface of a metallic gate electrode into a metallic insulating film at a low temperature and improving the reliability of devices such as a circuit and a system, and a method for manufacturing the device structure.
SOLUTION: In a semiconductor device, a gate electrode for a MOS device is formed by using metal, the sidewall of the MOS device is modified to the metallic insulating film and the reliability of the device is enhanced. The superior metallic insulating film is formed at the low temperature.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在低温下将金属栅电极的表面改变为金属绝缘膜并提高诸如电路和系统的装置的可靠性的装置结构，以及制造方法设备结构。解决方案：在半导体器件中，通过使用金属形成用于MOS器件的栅电极，MOS器件的侧壁被修改为金属绝缘膜，并且器件的可靠性得到提高。优良的金属绝缘膜在低温下形成。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009177178A Process system 有权
标题翻译：过程系统
公开(公告)号：JP2009177178A
公开(公告)日：2009-08-06
申请号：JP2009008675
申请日：2009-01-19
申请人： Foundation For Advancement Of International Science , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , NITTA TAKEHISA , HIRAYAMA MASAKI , MORII AKIO
IPC分类号： H01L21/31 , B01J3/00 , C23C16/455 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a process system which can uniformize the flow of gas and the form of a plasma, to provide a small processing system by the occupation area of the device, to reduce the loss of high-frequency power put in a high-frequency plasma process, and to generate and maintain the plasma efficiently. SOLUTION: The processing system has a processing chamber 403, provided on the upper part of a transfer chamber 402 via a gate 416 (Figure 4), a stage 406, which is sealed from the outside and has a mounting part 412 for mounting a material 415 to be treated, a means 410 for making the mounting part 412 of the stage 406 move, in such a way that the part 412 goes in and out between the chambers 402 and the processing chamber 403 via the gate 416, while the chamber 402 is sealed from the outside, and means 413 and 414 for sealing the chambers 402 and the processing chamber 403, when the mounting part 412 is inside the processing chamber 403. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供可以使气体流动和等离子体的形式均匀化的处理系统，以通过设备的占用区域提供小的处理系统，以减少高频功率的损失投入高频等离子体工艺，有效地生成和维持等离子体。解决方案：处理系统具有经由门416（图4）设置在传送室402的上部的处理室403，其从外部密封并具有安装部分412，安装部分412用于安装要处理的材料415，用于使台架406的安装部分412移动的装置410以使得部件412经由门416进入室402和处理室403之间进出的方式，同时当安装部分412位于处理室403内部时，腔室402与外部密封，以及用于密封腔室402和处理室403的装置413和414.（C）2009，JPO＆INPIT

6. 发明专利

JP2009117373A Plasma device 有权
标题翻译：等离子体装置
公开(公告)号：JP2009117373A
公开(公告)日：2009-05-28
申请号：JP2009000067
申请日：2009-01-05
申请人： Foundation For Advancement Of International Science , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , NITTA TAKEHISA , HIRAYAMA MASAKI , TAKANO HARUYUKI , KAIHARA TATSU
IPC分类号： H05H1/46 , C23C16/511 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/316
CPC分类号： H01J37/32238 , C23C16/511 , H01J37/32192 , H01J37/3244 , H01L21/02115 , H01L21/0212 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02197 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02274 , H01L21/31612 , H01L21/31625 , H01L21/31675 , H01L21/31691
摘要： PROBLEM TO BE SOLVED: To provide a plasma device usable in an etching plasma process and other plasma treatment for exciting uniform high-density plasma in a small space of a container over a large area where plasma potential is low to uniformly form a high-quality thin film on a large-area substrate at a low temperature and a high speed. SOLUTION: The plasma device includes a vacuum container 5301, a material gas introduction port 5302 required for generating plasma in the container, and a vacuum pump 5303 for exhausting material gas introduced into the container, wherein an antenna 5305 is provided outside the container for emitting microwaves and an electrode 5306 is provided inside the container for a treated base body 5308 to be placed thereon. Sideways from a film forming space above the substrate 5308, an exhaust space is provided which is directly connected to the suction port of the vacuum pump 5303. A width W of the exhaust space is twice a height (a) of the film forming space. The width W which is twice the height (a) sharply improves the uniformity of a gas flow. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供可用于蚀刻等离子体工艺和其他等离子体处理的等离子体装置，用于在等离子体电位低的大面积上在容器的小空间中激发均匀的高密度等离子体，以均匀地形成高品质薄膜在大面积基板上的低温和高速度。解决方案：等离子体装置包括真空容器5301，在容器中产生等离子体所需的材料气体导入口5302，以及用于排出导入容器的材料气体的真空泵5303，其中天线5305设置在用于发射微波的容器和电极5306设置在用于待处理的基体5308的容器内，以便放置在其上。从衬底5308上方的膜形成空间侧向设置有直接连接到真空泵5303的吸入口的排气空间。排气空间的宽度W是成膜空间的高度（a）的两倍。高度（a）的两倍的宽度W急剧地改善气流的均匀性。版权所有（C）2009，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式