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    • 13. 发明授权
    • Fixing unit and image forming apparatus
    • 定影单元和成像设备
    • US08090305B2
    • 2012-01-03
    • US12770145
    • 2010-04-29
    • Toshiyuki IsekiHisayoshi OhshimaTakahiko MatsumotoYukimichi Someya
    • Toshiyuki IsekiHisayoshi OhshimaTakahiko MatsumotoYukimichi Someya
    • G03G15/20
    • G03G15/2096G03G15/2064
    • Disclosed is a fixing device including a liquid supply unit that supplies a liquid fixer containing a softening agent that dissolves or swells at least part of resin to soften the resin; an air supply unit that supplies air for foaming the liquid fixer; and a foam generation unit that mixes the liquid fixer from the liquid supply unit with the air from the air supply unit to generate foams. The foam generation unit has an air channel where the air from the air supply unit flows, a liquid-fixer channel provided such that the liquid fixer from the liquid supply unit flows from a direction opposite to a flowing direction of the air channel, and an air-and-liquid mixing part that mixes the air from the air channel with the liquid fixer from the liquid fixer channel so as to be opposite to each other, thereby generating a foam-like fixer.
    • 公开了一种定影装置,其包括:液体供应单元,其供应含有溶解或溶胀至少部分树脂以软化树脂的软化剂的液体定影剂; 空气供应单元,其供应用于使液体定影剂发泡的空气; 以及泡沫产生单元,其将来自液体供应单元的液体定影剂与来自空气供应单元的空气混合以产生泡沫。 泡沫产生单元具有空气通道,空气供给单元的空气流动,液体定影通道设置成使得来自液体供应单元的液体定影剂从与空气通道的流动方向相反的方向流动, 空气和液体混合部分,其将来自空气通道的空气与液体定影剂从液体定影剂通道混合,以便彼此相对,从而产生泡沫状定影剂。
    • 16. 发明授权
    • Solid state surface evaluation methods and devices
    • 固态表面评估方法和装置
    • US5534698A
    • 1996-07-09
    • US271741
    • 1994-07-07
    • Hisayoshi OhshimaYoshiyasu Yamada
    • Hisayoshi OhshimaYoshiyasu Yamada
    • G01B11/30G01N21/55G01N21/59G01J3/42
    • G01B11/30G01N21/55G01N21/59
    • Methods and devices for evaluating solid-state surface properties use infrared absorption of lattice vibration. These methods and devices are characterized by reflection spectrometry by injecting infrared rays from the reverse of the solids, placing a light transmissible solid-state sample in ways that its surface faces the plane reflex mirror on the interaction region formed by reflected infrared rays, or by injecting infrared rays from the rear of a sample or from the front thereof after upright installation of the light transmissible solid-state sample through a slit created across the plane reflex mirror or on the surface of plane reflex mirror. These methods and devices enable simplified and accurate reflection spectrometry of solid-surface properties, featuring an economical system configuration that dispenses with expensive prism, unlike the conventional ATR method.
    • 用于评估固态表面性质的方法和装置使用晶格振动的红外吸收。 这些方法和装置的特征在于通过从固体反向注入红外线的反射光谱法,将透光固态样品放置在其表面面对由反射红外线形成的相互作用区域上的平面反射镜的方式,或者由 在通过穿过平面反射镜或平面反射镜的表面上形成的狭缝直立安装透光固体样品之后,从样品的后部或从其前方注入红外线。 这些方法和装置能够实现固体表面性质的简化和准确的反射光谱测定,其特征在于与常规ATR方法不同,其具有省去昂贵的棱镜的经济系统配置。
    • 19. 发明授权
    • Semiconductor substrate manufacturing method
    • 半导体衬底制造方法
    • US06251754B1
    • 2001-06-26
    • US09074384
    • 1998-05-08
    • Hisayoshi OhshimaMasaki MatsuiKunihiro OnodaShoichi Yamauchi
    • Hisayoshi OhshimaMasaki MatsuiKunihiro OnodaShoichi Yamauchi
    • H01L2120
    • H01L21/76254
    • The invention provides a number of semiconductor substrate manufacturing methods with which, in manufacturing a semiconductor substrate having a semiconductor layer in an insulated state on a supporting substrate, it is possible to obtain a thick semiconductor layer with a simple process and cheaply while reducing impurity contamination of the semiconductor layer to a minimum. One of these methods includes a defective layer forming step of carrying out ion implantation to a predetermined depth from the surface of a base substrate to partition off a monocrystalline thin film layer at the surface of the base substrate by a defective layer formed by implanted ions, a semiconductor film forming step of forming a monocrystalline semiconductor film of a predetermined thickness on the monocrystalline thin film layer, a laminating step of laminating the base substrate by the surface of the monocrystalline semiconductor film to the supporting substrate, and a detaching step of detaching the base substrate laminated to the supporting substrate at the defective layer.
    • 本发明提供了许多半导体衬底制造方法,在制造具有在支撑衬底上具有绝缘状态的半导体层的半导体衬底的情况下,可以以简单的工艺获得厚半导体层并且在降低杂质污染的同时廉价 的半导体层。 这些方法之一包括从基底表面进行离子注入到预定深度的缺陷层形成步骤,以通过由注入离子形成的缺陷层在基底基板的表面分隔单晶薄膜层, 在单晶薄膜层上形成预定厚度的单晶半导体膜的半导体膜形成步骤,通过单晶半导体膜的表面将基底基板层压到支撑基板上的层压步骤,以及将基板 基底基板层叠到不良层的支撑基板。
    • 20. 发明授权
    • Method for producing a semiconductor substrate
    • 半导体基板的制造方法
    • US6060344A
    • 2000-05-09
    • US136294
    • 1998-08-19
    • Masaki MatsuiMasatake NagayaHisayoshi Ohshima
    • Masaki MatsuiMasatake NagayaHisayoshi Ohshima
    • H01L21/02H01L21/76H01L21/762H01L27/12H02L21/20
    • H01L21/76264H01L21/76297H01L21/76275H01L21/76286
    • In a method for producing a semiconductor substrate completed through a bonding process for joining a semiconductor wafer to a support substrate by performing heat treatment thereto in a state in which the semiconductor wafer is closely joined to the support substrate, the method according to the present invention includes the following steps, i.e., a depositing process for depositing a poly-crystal semiconductor which covers all areas of a surface to be bonded on the surface of the semiconductor wafer; a heat treatment process for performing the heat treatment to the semiconductor wafer provided after the depositing process, during a predetermined time under a temperature equal to or higher than the heat treatment temperature at the bonding process; and a polishing process for flattening the surface of the poly-crystal semiconductor provided after the heat treatment process. After the above processes were performed in order, the bonding process is performed after the polishing process.
    • 在半导体基板的制造方法中,通过在将半导体晶片紧密接合到支撑基板的状态下对半导体晶片与支撑基板进行热处理的接合工序而完成,本发明的方法 包括以下步骤,即,用于沉积覆盖半导体晶片表面上要接合的表面的所有区域的多晶半导体的沉积工艺; 在接合工序的等于或高于所述热处理温度的温度下的预定时间内对所述沉积工艺之后提供的所述半导体晶片进行热处理的热处理工艺; 以及用于使在热处理工艺之后提供的多晶半导体的表面变平的抛光工艺。 在进行上述处理之后,在抛光处理之后进行接合处理。