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11. 发明申请

US20050057164A1 Coaxial type impedance matching device and impedance detecting method for plasma generation 有权
标题翻译：同轴型阻抗匹配装置及等离子体发生阻抗检测方法
公开(公告)号：US20050057164A1
公开(公告)日：2005-03-17
申请号：US10951049
申请日：2004-09-27
申请人： Toshiaki Kitamura , Koichi Rokuyama , Shigeru Kasai , Takashi Ogino , Yuki Osada
发明人： Toshiaki Kitamura , Koichi Rokuyama , Shigeru Kasai , Takashi Ogino , Yuki Osada
IPC分类号： H01J37/32 , H01J7/24 , H05B31/26
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32183 , H01P5/026 , H01P5/04
摘要： A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.
摘要翻译：等离子体产生方法通过控制高频发生单元产生高频信号并通过阻抗匹配装置将高频信号馈送到处理室来在处理室中产生等离子体。等离子体产生方法包括当在处理室中产生等离子体时，控制阻抗匹配装置，以便满足预设的匹配条件，然后控制高频产生单元以产生和馈送高频信号产生等离子体的功率到处理室。

12. 发明申请

US20060144519A1 Coaxial type impedance matching device and impedance detecting method for plasma generation 有权
标题翻译：同轴型阻抗匹配装置及等离子体发生阻抗检测方法
公开(公告)号：US20060144519A1
公开(公告)日：2006-07-06
申请号：US11370780
申请日：2006-03-08
申请人： Toshiaki Kitamura , Koichi Rokuyama , Shigeru Kasai , Takashi Ogino , Yuki Osada
发明人： Toshiaki Kitamura , Koichi Rokuyama , Shigeru Kasai , Takashi Ogino , Yuki Osada
IPC分类号： C23F1/00
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32183 , H01P5/026 , H01P5/04
摘要： A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.
摘要翻译：等离子体产生方法通过控制高频发生单元产生高频信号并通过阻抗匹配装置将高频信号馈送到处理室来在处理室中产生等离子体。等离子体产生方法包括当在处理室中产生等离子体时，控制阻抗匹配装置，以便满足预设的匹配条件，然后控制高频产生单元以产生和馈送高频信号产生等离子体的功率到处理室。

13. 发明授权

US06856211B2 Coaxial type impedance matching device 有权
标题翻译：同轴型阻抗匹配装置
公开(公告)号：US06856211B2
公开(公告)日：2005-02-15
申请号：US10441906
申请日：2003-05-20
申请人： Fumio Yamada , Toshiaki Kitamura , Hiroyuki Kobayashi , Koichi Rokuyama , Akihiro Kubota , Shigeru Kasai , Takashi Ogino , Yuki Osada
发明人： Fumio Yamada , Toshiaki Kitamura , Hiroyuki Kobayashi , Koichi Rokuyama , Akihiro Kubota , Shigeru Kasai , Takashi Ogino , Yuki Osada
IPC分类号： H01R13/646 , H03H7/38 , H01Q1/50
CPC分类号： H01R24/542 , H01R24/44 , H01R2103/00
摘要： A coaxial type impedance matching device includes a matching device body including an external conductor and an internal conductor arranged in the external conductor, an input side dielectric disposed in the matching device body and including a first dielectric and a second dielectric, and an output side dielectric disposed in the matching device body and including a third dielectric and a fourth dielectric. Distance between opposed surfaces of the first dielectric and the second dielectric is a predetermined distance, which is in a range of Nλ/4−λ/6 to Nλ/4−λ/6, where λ represents a guide wavelength of an input signal in the matching device body and N represents odd number. Distance between opposed surfaces of the third dielectric and the fourth dielectric is the predetermined distance.
摘要翻译：同轴型阻抗匹配装置包括匹配装置主体，其包括外部导体和布置在外部导体中的内部导体，输入侧电介质设置在匹配装置主体中并且包括第一电介质和第二电介质，以及输出侧电介质设置在匹配装置主体中并且包括第三电介质和第四电介质。第一电介质和第二电介质的相对表面之间的距离为Nλ/ 4-λ/ 6至Nλ/ 4-λ/ 6的范围内的预定距离，其中λ表示输入信号的引导波长匹配装置主体，N表示奇数。第三电介质和第四电介质的相对表面之间的距离为预定距离。

14. 发明授权

US08163128B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08163128B2
公开(公告)日：2012-04-24
申请号：US12243598
申请日：2008-10-01
申请人： Shigeru Kasai , Yuki Osada , Takashi Ogino
发明人： Shigeru Kasai , Yuki Osada , Takashi Ogino
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H05B6/705
摘要： A plasma processing apparatus includes a chamber for containing a substrate to be processed, a gas supply unit for supplying a processing gas into the chamber, and a microwave introducing unit for introducing plasma generating microwaves into the chamber. The microwave introducing unit includes a microwave oscillator for outputting a plurality of microwaves having specified outputs, and an antenna section having a plurality of antennas to which the microwaves outputted from the microwave oscillator are respectively transmitted.
摘要翻译：等离子体处理装置包括用于容纳待处理基板的室，用于将处理气体供应到室中的气体供给单元和用于将等离子体产生微波引入室的微波引入单元。微波引入单元包括微波振荡器，用于输出具有特定输出的多个微波，以及具有分别从微波振荡器输出微波的多个天线的天线部分。

15. 发明授权

US07915827B2 Magnetron control method, magnetron service life judgment method, microwave generation device, magnetron service life judgment device, processing device, computer program, and storage medium 失效
标题翻译：磁控管控制方法，磁控管使用寿命判断方法，微波发生装置，磁控管使用寿命判断装置，处理装置，计算机程序和存储介质
公开(公告)号：US07915827B2
公开(公告)日：2011-03-29
申请号：US12044625
申请日：2008-03-07
申请人： Shigeru Kasai , Yuki Osada
发明人： Shigeru Kasai , Yuki Osada
IPC分类号： H01J25/50
CPC分类号： H05B6/666 , H01J37/32192 , H01J37/32201 , H05B6/806 , H05B2206/043
摘要： A microwave generation device includes: a magnetron having a cathode containing a filament and an anode containing a hollow resonator arranged to oppose to each other; a filament current measuring unit; and an application voltage measuring unit for measuring voltage applied to the filament. Based on the current and the voltage obtained by the current measuring unit and the voltage measuring unit, a resistance value calculation unit obtains a resistance value of the filament. A temperature calculation unit calculates the filament temperature from the resistance value and the resistance-temperature dependent characteristic. A filament power source is controlled by a power control unit so that the filament temperature is within a predetermined temperature range.
摘要翻译：微波发生装置包括：具有包含灯丝的阴极的磁控管和包含彼此相对的中空谐振器的阳极; 灯丝电流测量单元; 以及用于测量施加到灯丝上的电压的施加电压测量单元。基于由电流测量单元和电压测量单元获得的电流和电压，电阻值计算单元获得灯丝的电阻值。温度计算单元根据电阻值和电阻温度依赖特性来计算灯丝温度。灯丝电源由功率控制单元控制，使得灯丝温度在预定的温度范围内。

16. 发明授权

US07355379B2 Coaxial type impedance matching device and impedance detecting method for plasma generation 有权
标题翻译：同轴型阻抗匹配装置及等离子体发生阻抗检测方法
公开(公告)号：US07355379B2
公开(公告)日：2008-04-08
申请号：US11370780
申请日：2006-03-08
申请人： Toshiaki Kitamura , Koichi Rokuyama , Shigeru Kasai , Takashi Ogino , Yuki Osada
发明人： Toshiaki Kitamura , Koichi Rokuyama , Shigeru Kasai , Takashi Ogino , Yuki Osada
IPC分类号： G01R23/00 , G01R25/00
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32183 , H01P5/026 , H01P5/04
摘要： A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.
摘要翻译：等离子体产生方法通过控制高频发生单元产生高频信号并通过阻抗匹配装置将高频信号馈送到处理室来在处理室中产生等离子体。等离子体产生方法包括当在处理室中产生等离子体时，控制阻抗匹配装置，以便满足预设的匹配条件，然后控制高频产生单元以产生和馈送高频信号产生等离子体的功率到处理室。

17. 发明授权

US06819052B2 Coaxial type impedance matching device and impedance detecting method for plasma generation 有权
标题翻译：同轴型阻抗匹配装置及等离子体发生阻抗检测方法
公开(公告)号：US06819052B2
公开(公告)日：2004-11-16
申请号：US10441899
申请日：2003-05-20
申请人： Toshiaki Kitamura , Koichi Rokuyama , Shigeru Kasai , Takashi Ogino , Yuki Osada
发明人： Toshiaki Kitamura , Koichi Rokuyama , Shigeru Kasai , Takashi Ogino , Yuki Osada
IPC分类号： H01J724
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32183 , H01P5/026 , H01P5/04
摘要： For plasma generation, an impedance matching device and a process of controlling and detecting the impedance matching device are provided to satisfy a preset matching condition. The impedance matching device includes a tubular external conductor and an internal conductor disposed therein, a matching device body including a plurality of dielectrics, a moving mechanism, a storing unit for storing a data table, a measuring device, and a calculation control unit. The impedance detecting process includes inputting a progressive wave and a reflected wave outputted by a directional coupler connected to an object to be matched, generating different signals, and mixing the signals to determine relative phase differences and amplitude ratios of the signals, and detecting an input impedance of the object to be matched on a basis of the detected amplitude ratios and that of a true phase difference between the progressive wave and the reflected wave that is detected by referring to a relationship prepared in advance.
摘要翻译：对于等离子体产生，提供阻抗匹配装置和控制和检测阻抗匹配装置的过程以满足预设的匹配条件。阻抗匹配装置包括管状外部导体和布置在其中的内部导体，包括多个电介质的匹配装置主体，移动机构，用于存储数据表的存储单元，测量装置和计算控制单元。阻抗检测处理包括：输入由连接到要匹配对象的定向耦合器输出的行波和反射波，产生不同的信号，以及混合信号以确定信号的相对相位差和振幅比，以及检测输入基于检测到的振幅比来匹配的物体的阻抗以及通过参照预先准备的关系检测到的行进波和反射波之间的真相位差的阻抗。

18. 发明授权

US09543123B2 Plasma processing apparatus and plasma generation antenna 有权
标题翻译：等离子体处理装置和等离子体生成天线
公开(公告)号：US09543123B2
公开(公告)日：2017-01-10
申请号：US13435552
申请日：2012-03-30
申请人： Taro Ikeda , Tomohito Komatsu , Shigeru Kasai
发明人： Taro Ikeda , Tomohito Komatsu , Shigeru Kasai
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32 , C23C16/455 , H05H1/46 , C23C16/511
CPC分类号： H01J37/3222 , C23C16/45565 , C23C16/511 , H01J37/32211 , H01J37/32229 , H01J37/3244 , H01J37/32449 , H05H1/46 , H05H2001/463
摘要： A plasma generation antenna and a plasma processing apparatus can supply a gas and an electromagnetic wave effectively. A plasma processing apparatus 10 includes a processing chamber 100 in which a plasma process is performed; a wavelength shortening plate 480 configured to transmit an electromagnetic wave; and a plasma generation antenna 200 having a shower head 210 provided adjacent to the wavelength shortening plate 480. The shower head 210 is made of a conductor, and has a multiple number of gas holes 215 and a multiple number of slots 220 through which the electromagnetic wave passes. The slots 220 are provided at positions isolated from the gas holes 215.
摘要翻译：等离子体发生天线和等离子体处理装置可以有效地提供气体和电磁波。等离子体处理装置10包括其中执行等离子体处理的处理室100; 构造成透射电磁波的波长缩短板480; 以及等离子体产生天线200，其具有与波长缩短板480相邻设置的淋浴喷头210.喷头210由导体制成，并具有多个气孔215和多个槽220，电磁波通。槽220设置在与气孔215隔开的位置处。

19. 发明申请

US20110018651A1 POWER COMBINER AND MICROWAVE INTRODUCTION MECHANISM 审中-公开
标题翻译：电力综合与微波介绍机制
公开(公告)号：US20110018651A1
公开(公告)日：2011-01-27
申请号：US12922702
申请日：2009-03-09
申请人： Taro Ikeda , Shigeru Kasai
发明人： Taro Ikeda , Shigeru Kasai
IPC分类号： H01P5/18
CPC分类号： H01P5/12 , H01J37/32192 , H01J37/3222 , H05H1/46
摘要： A power combiner 100 comprises a tubular main container 1, a plurality of power introduction ports 2 provided on the lateral surface of the main container 1 and introducing power as electromagnetic waves, a plurality of feeding antennas 6 provided, respectively, on plurality of power introduction ports 2, a combiner part 10 performing spatial combining of electromagnetic waves radiated from the plurality of feeding antennas 6 into main container 1, and an output port 11 for outputting electromagnetic waves combined at combiner part 10. Each feeding antenna 6 consists of an antenna main body 23 having a first pole 21 to which electromagnetic waves are supplied from a power introduction port 2 and a second pole 22 for radiating the electromagnetic waves thus supplied, and a reflection part 24 so provided as to project sideways from antenna main body 23 and reflecting electromagnetic waves.
摘要翻译：功率组合器100包括管状主容器1，设置在主容器1的侧表面上并且作为电磁波引入电力的多个电力引入口2，分别设置在多个电力引入件上的多个馈电天线6 端口2，将从多个馈电天线6辐射的电磁波空间组合到主容器1中的组合器部分10和用于输出组合在一起的电磁波的输出端口11.每个馈电天线6由天线主体主体23具有从功率引入口2供给电磁波的第一极21和用于照射如此供给的电磁波的第二极22，以及设置成从天线主体23侧向突出并反射的反射部24 电磁波。

20. 发明申请

US20120328273A1 HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD 审中-公开
标题翻译：热处理设备和热处理方法
公开(公告)号：US20120328273A1
公开(公告)日：2012-12-27
申请号：US13524023
申请日：2012-06-15
申请人： Hisashi KAWANO , Ryouichi Uemura , Kousuke Yoshihara , Shigeru Kasai , Keiji Tanouchi , Makoto Muramatsu , Mitsuaki Iwashita , Masatake Yoneda , Kazuhiro Ooya
发明人： Hisashi KAWANO , Ryouichi Uemura , Kousuke Yoshihara , Shigeru Kasai , Keiji Tanouchi , Makoto Muramatsu , Mitsuaki Iwashita , Masatake Yoneda , Kazuhiro Ooya
IPC分类号： H05B6/00
CPC分类号： H01L21/67115 , H05B3/0033
摘要： Disclosed is a thermal processing apparatus and method that can acquire a high throughput and reduce the occupation area of the thermal processing apparatus. A wafer is heated by an LED module that irradiates infrared light corresponding to the absorption wavelength of the wafer, and therefore, the wafer can be rapidly heated. Since an LED is used as a heat source and a temperature rise of LED is small, a cooling process after the heating process can be performed in the same process area as the heating process area. As a result, an installation area of the thermal processing apparatus can be reduced. Since the time for moving between a heating process area and a cooling process area can be saved, a time required for a series of processes including the heating process and the subsequent cooling process can be shortened, thereby improving a throughput.
摘要翻译：公开了一种可以获得高产量并减少热处理装置的占用面积的热处理装置和方法。通过照射与晶片的吸收波长相对应的红外光的LED模块对晶片进行加热，因此可以快速加热晶片。由于将LED用作热源并且LED的温度升高很小，因此可以在与加热处理区域相同的处理区域中进行加热处理之后的冷却处理。结果，可以减少热处理装置的安装面积。由于可以节省在加热处理区域和冷却处理区域之间移动的时间，因此可以缩短包括加热处理和随后的冷却处理的一系列处理所需的时间，从而提高生产量。

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