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1. 发明申请

US20120328273A1 HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD 审中-公开
标题翻译：热处理设备和热处理方法
公开(公告)号：US20120328273A1
公开(公告)日：2012-12-27
申请号：US13524023
申请日：2012-06-15
申请人： Hisashi KAWANO , Ryouichi Uemura , Kousuke Yoshihara , Shigeru Kasai , Keiji Tanouchi , Makoto Muramatsu , Mitsuaki Iwashita , Masatake Yoneda , Kazuhiro Ooya
发明人： Hisashi KAWANO , Ryouichi Uemura , Kousuke Yoshihara , Shigeru Kasai , Keiji Tanouchi , Makoto Muramatsu , Mitsuaki Iwashita , Masatake Yoneda , Kazuhiro Ooya
IPC分类号： H05B6/00
CPC分类号： H01L21/67115 , H05B3/0033
摘要： Disclosed is a thermal processing apparatus and method that can acquire a high throughput and reduce the occupation area of the thermal processing apparatus. A wafer is heated by an LED module that irradiates infrared light corresponding to the absorption wavelength of the wafer, and therefore, the wafer can be rapidly heated. Since an LED is used as a heat source and a temperature rise of LED is small, a cooling process after the heating process can be performed in the same process area as the heating process area. As a result, an installation area of the thermal processing apparatus can be reduced. Since the time for moving between a heating process area and a cooling process area can be saved, a time required for a series of processes including the heating process and the subsequent cooling process can be shortened, thereby improving a throughput.
摘要翻译：公开了一种可以获得高产量并减少热处理装置的占用面积的热处理装置和方法。通过照射与晶片的吸收波长相对应的红外光的LED模块对晶片进行加热，因此可以快速加热晶片。由于将LED用作热源并且LED的温度升高很小，因此可以在与加热处理区域相同的处理区域中进行加热处理之后的冷却处理。结果，可以减少热处理装置的安装面积。由于可以节省在加热处理区域和冷却处理区域之间移动的时间，因此可以缩短包括加热处理和随后的冷却处理的一系列处理所需的时间，从而提高生产量。

2. 发明申请

US20100307683A1 SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS 审中-公开
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US20100307683A1
公开(公告)日：2010-12-09
申请号：US12846406
申请日：2010-07-29
申请人： Mitsuaki IWASHITA , Satoru Shimura , Keiji Tanouchi
发明人： Mitsuaki IWASHITA , Satoru Shimura , Keiji Tanouchi
IPC分类号： H01L21/308
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/6715 , H01L21/67178 , H01L21/67225
摘要： To improve the etch resistance of a resist pattern corresponding to an exposure light source with a short wavelength.After a resist film on a substrate is exposed to light and developed to form a resist pattern, a treatment step of supplying a fluorine-based liquid to the surface of the resist pattern is performed. Thereafter, an etching treatment of a base film using the resist pattern as a mask is performed. This increases the density of fluorine molecules on the surface of the resist pattern before the etching treatment to improve the etch resistance of the resist pattern.
摘要翻译：为了提高与短波长的曝光光源对应的抗蚀剂图案的耐蚀刻性。在将基板上的抗蚀剂膜曝光并显影以形成抗蚀剂图案之后，进行向抗蚀剂图案的表面供给氟基液体的处理步骤。此后，进行使用抗蚀剂图案作为掩模的基膜的蚀刻处理。这增加了蚀刻处理前的抗蚀剂图案表面上的氟分子的密度，以提高抗蚀剂图案的耐蚀刻性。

3. 发明授权

US07781342B2 Substrate treatment method for etching a base film using a resist pattern 失效
标题翻译：使用抗蚀剂图案蚀刻基底膜的基板处理方法
公开(公告)号：US07781342B2
公开(公告)日：2010-08-24
申请号：US11596459
申请日：2005-04-28
申请人： Mitsuaki Iwashita , Satoru Shimura , Keiji Tanouchi
发明人： Mitsuaki Iwashita , Satoru Shimura , Keiji Tanouchi
IPC分类号： H01L21/311
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/6715 , H01L21/67178 , H01L21/67225
摘要： A substrate treatment method which includes a developing step of developing a resist film on a substrate to form a resist pattern on the substrate, and thereafter includes an etching step of etching a base film using the resist pattern as a mask. The substrate treatment method, between the developing step and the etching step, supplies a fluorine-based liquid to the resist pattern to form a protection film with a high fluorine density on a surface of the resist pattern.
摘要翻译：一种基板处理方法，其包括在基板上显影抗蚀剂膜以在基板上形成抗蚀剂图案的显影步骤，然后包括使用抗蚀剂图案作为掩模蚀刻基膜的蚀刻步骤。在显影步骤和蚀刻步骤之间的衬底处理方法，在抗蚀剂图案的表面上形成氟基液体，以形成氟密度高的保护膜。

4. 发明申请

US20070243711A1 Substrate Treatment Method and Substrate Treatment Apparatus 失效
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US20070243711A1
公开(公告)日：2007-10-18
申请号：US11596459
申请日：2005-04-28
申请人： Mitsuaki Iwashita , Satoru Shimura , Keiji Tanouchi
发明人： Mitsuaki Iwashita , Satoru Shimura , Keiji Tanouchi
IPC分类号： G03F7/40 , H01L21/027 , H01L21/3065
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/6715 , H01L21/67178 , H01L21/67225
摘要： To improve the etch resistance of a resist pattern corresponding to an exposure light source with a short wavelength. After a resist film on a substrate is exposed to light and developed to form a resist pattern, a treatment step of supplying a fluorine-based liquid to the surface of the resist pattern is performed. Thereafter, an etching treatment of a base film using the resist pattern as a mask is performed. This increases the density of fluorine molecules on the surface of the resist pattern before the etching treatment to improve the etch resistance of the resist pattern.
摘要翻译：为了提高与短波长的曝光光源对应的抗蚀剂图案的耐蚀刻性。在将基板上的抗蚀剂膜曝光并显影以形成抗蚀剂图案之后，进行向抗蚀剂图案的表面供给氟基液体的处理步骤。此后，进行使用抗蚀剂图案作为掩模的基膜的蚀刻处理。这增加了蚀刻处理前的抗蚀剂图案表面上的氟分子的密度，以提高抗蚀剂图案的耐蚀刻性。

5. 发明授权

US07976896B2 Method of processing a substrate and apparatus processing the same 有权
标题翻译：处理基板的方法及其处理方法
公开(公告)号：US07976896B2
公开(公告)日：2011-07-12
申请号：US11540629
申请日：2006-10-02
申请人： Yoshiteru Fukuda , Nobuhiro Ogata , Takayuki Ishii , Keiji Tanouchi
发明人： Yoshiteru Fukuda , Nobuhiro Ogata , Takayuki Ishii , Keiji Tanouchi
IPC分类号： B05D3/12
CPC分类号： H01L21/6715 , G03F7/162 , G03F7/168 , H01L21/67051
摘要： A spin chuck rotatably holds a semiconductor wafer, while resist is dropped on a surface of the semiconductor wafer through a resist application nozzle and thus applied thereon, and before the resist applied on the wafer dries, a cleaning liquid is supplied through a bevel cleaning nozzle to a portion of the wafer located at a peripheral portion thereof in a vicinity of a beveled portion to remove the resist adhering to the beveled portion. Thereafter, a film of the resist that is formed on the surface of the wafer is dried.
摘要翻译：旋转卡盘可旋转地保持半导体晶片，同时抗蚀剂通过抗蚀剂施加喷嘴落在半导体晶片的表面上并因此施加在其上，并且在施加在晶片上的抗蚀剂干燥之前，通过斜面清洁喷嘴到位于其周边部分的晶片的位于斜面部分附近的部分以去除附着在斜面部分上的抗蚀剂。此后，将形成在晶片表面上的抗蚀剂膜干燥。

6. 发明申请

US20070082134A1 Method of processing a substrate and apparatus processing the same 有权
标题翻译：处理基板的方法及其处理方法
公开(公告)号：US20070082134A1
公开(公告)日：2007-04-12
申请号：US11540629
申请日：2006-10-02
申请人： Yoshiteru Fukuda , Nobuhiro Ogata , Takayuki Ishii , Keiji Tanouchi
发明人： Yoshiteru Fukuda , Nobuhiro Ogata , Takayuki Ishii , Keiji Tanouchi
IPC分类号： B05D3/10 , B05D3/04 , B05C13/02 , B08B3/00
CPC分类号： H01L21/6715 , G03F7/162 , G03F7/168 , H01L21/67051
摘要： A spin chuck rotatably holds a semiconductor wafer, while resist is dropped on a surface of the semiconductor wafer through a resist application nozzle and thus applied thereon, and before the resist applied on the wafer dries, a cleaning liquid is supplied through a bevel cleaning nozzle to a portion of the wafer located at a peripheral portion thereof in a vicinity of a beveled portion to remove the resist adhering to the beveled portion. Thereafter, a film of the resist that is formed on the surface of the wafer is dried.
摘要翻译：旋转卡盘可旋转地保持半导体晶片，同时抗蚀剂通过抗蚀剂施加喷嘴落在半导体晶片的表面上并因此施加在其上，并且在施加在晶片上的抗蚀剂干燥之前，通过斜面清洁喷嘴到位于其周边部分的晶片的位于斜面部分附近的部分以去除附着在斜面部分上的抗蚀剂。此后，将形成在晶片表面上的抗蚀剂膜干燥。

7. 发明申请

US20060068337A1 Substrate processing method 审中-公开
标题翻译：基板加工方法
公开(公告)号：US20060068337A1
公开(公告)日：2006-03-30
申请号：US11218637
申请日：2005-09-06
申请人： Keiji Tanouchi , Satoru Shimura
发明人： Keiji Tanouchi , Satoru Shimura
IPC分类号： G03C5/26
CPC分类号： G03F7/3021 , G03F7/32 , G03F7/40
摘要： In the present invention, a substrate processing method, in which a developing treatment is performed after exposure processing of a pattern, includes a shaping step of shaping the shape of a resist pattern such that a side wall portion of the resist pattern after the developing treatment swells out to a groove side and a swell-out portion swelling out to the groove side and concavely curving with respect to the groove side is formed at a corner portion of a bottom of the resist pattern. According to the present invention, the side wall portion is made to swell out to improve the striation of the resist pattern, resulting in a preferable shape of a pattern after etching treatment.
摘要翻译：在本发明中，在图案的曝光处理之后进行显影处理的基板处理方法包括使抗蚀剂图案的形状成形，使得在显影处理后的抗蚀剂图案的侧壁部分膨胀到凹槽侧，并且在抗蚀剂图案的底部的角部处形成有膨胀到凹槽侧的膨胀部分并且相对于凹槽侧凹陷弯曲。根据本发明，使侧壁部分膨胀以改善抗蚀剂图案的条纹，导致蚀刻处理后的图案的优选形状。

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