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11. 发明申请

US20050039682A1 Multiple frequency plasma etch reactor 有权
标题翻译：多频等离子体蚀刻反应器
公开(公告)号：US20050039682A1
公开(公告)日：2005-02-24
申请号：US10645665
申请日：2003-08-22
申请人： Raj Dhindsa , S.M. Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
发明人： Raj Dhindsa , S.M. Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
IPC分类号： H01J37/32 , C23C16/00 , H05H1/24
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation frequencies to the exclusion of other frequencies.
摘要翻译：通过以几个频率激发等离子体，在真空等离子体处理室中用等离子体处理工件，使得等离子体被几个频率激发同时导致在等离子体中发生几种不同的现象。该腔室包括中央顶部和底部电极以及由RF供电的外围顶部和/或底部电极装置，或通过将至少一个等离子体激发频率传递至排除另一个等离子体激发频率的滤波器装置连接到参考电位频率

12. 发明申请

US20070123053A1 Self-aligned pitch reduction 有权
标题翻译：自对准螺距减小
公开(公告)号：US20070123053A1
公开(公告)日：2007-05-31
申请号：US11291303
申请日：2005-11-30
申请人： Jisoo Kim , Sangheon Lee , Daehan Choi , S.M. Sadjadi
发明人： Jisoo Kim , Sangheon Lee , Daehan Choi , S.M. Sadjadi
IPC分类号： H01L21/302
CPC分类号： H01L21/0338
摘要： A method providing features in a dielectric layer is provided. A sacrificial layer is formed over the dielectric layer. A set of sacrificial layer features is etched into the sacrificial layer. A first set of dielectric layer features is etched into the dielectric layer through the sacrificial layer. The first set of dielectric layer features and the set of sacrificial layer features are filled with a filler material. The sacrificial layer is removed. The widths of the spaces between the parts of the filler material are shrunk with a shrink sidewall deposition. A second set of dielectric layer features is etched into the dielectric layer through the shrink sidewall deposition. The filler material and shrink sidewall deposition are removed.
摘要翻译：提供了一种在电介质层中提供特征的方法。在电介质层上形成牺牲层。一组牺牲层特征被蚀刻到牺牲层中。通过牺牲层将介电层特征的第一组蚀刻到介电层中。第一组介电层特征和一组牺牲层特征用填充材料填充。牺牲层被去除。填充材料的各部分之间的间隙的宽度随收缩侧壁沉积而收缩。通过收缩侧壁沉积将第二组介电层特征蚀刻到介电层中。去除填充材料和收缩侧壁沉积。

13. 发明申请

US20060285113A1 Reticle alignment technique 有权
标题翻译：标线对准技术
公开(公告)号：US20060285113A1
公开(公告)日：2006-12-21
申请号：US11158680
申请日：2005-06-21
申请人： S.M. Sadjadi
发明人： S.M. Sadjadi
IPC分类号： G01B11/00
CPC分类号： G03F7/70633 , G03F9/7011 , G03F9/7019 , G03F9/7046 , Y10S438/975
摘要： A method for aligning a reticle is provided. A first patterned layer with a first alignment grid is formed. Sidewall layers are formed over the first patterned layer to perform a first shrink. The first alignment grid after shrink is etched into an etch layer to form an etched first alignment grid. The patterned layer is removed. An optical pattern of a second alignment grid aligned over the etched first alignment grid is measured. The optical pattern is used to determine whether the second alignment grid is aligned over the etched first alignment grid.
摘要翻译：提供了用于对准掩模版的方法。形成具有第一对准栅格的第一图案层。侧壁层形成在第一图案化层上以执行第一收缩。收缩后的第一对准网格蚀刻到蚀刻层中以形成蚀刻的第一对准栅格。去除图案层。测量在蚀刻的第一对准栅格上对准的第二对准栅格的光学图案。光学图案用于确定第二对准栅格是否在蚀刻的第一对准栅格上对准。

14. 发明申请

US20060278339A1 Etch rate uniformity using the independent movement of electrode pieces 审中-公开
标题翻译：蚀刻速率均匀性采用独立运动的电极片
公开(公告)号：US20060278339A1
公开(公告)日：2006-12-14
申请号：US11152016
申请日：2005-06-13
申请人： Jisoo Kim , Dae-han Choi , S.M. Sadjadi
发明人： Jisoo Kim , Dae-han Choi , S.M. Sadjadi
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/32568 , H01J37/32623
摘要： A plasma reactor comprises a chamber, a bottom electrode, a top electrode, a bottom grounded extension adjacent to and substantially encircling the bottom electrode. The top grounded extension adjacent to and substantially parallel to the top electrode. The top electrode is also grounded. The top grounded extension is capable of being independently raised or lowered to extend into a region above the bottom grounded extension.
摘要翻译：等离子体反应器包括腔室，底部电极，顶部电极，与底部电极相邻并且基本上环绕底部电极的底部接地延伸部。邻近并基本平行于顶部电极的顶部接地延伸部分。顶部电极也接地。顶部接地延伸部能够独立地升高或降低以延伸到底部接地延伸部上方的区域中。

15. 发明申请

US20060223327A1 Etch with photoresist mask 失效
标题翻译：刻蚀光刻胶掩模
公开(公告)号：US20060223327A1
公开(公告)日：2006-10-05
申请号：US11094559
申请日：2005-03-29
申请人： Jisoo Kim , Sangheon Lee , Binet Worsham , Robert Charatan , S.M. Sadjadi
发明人： Jisoo Kim , Sangheon Lee , Binet Worsham , Robert Charatan , S.M. Sadjadi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116
摘要： A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3 is provided into the plasma chamber. A plasma is formed from the NF3 gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF3 gas.
摘要翻译：提供了一种在衬底上蚀刻电介质层的方法。在电介质层上形成光致抗蚀剂掩模。将基板放置在等离子体处理室中。包含NF 3 N的蚀刻剂气体被提供到等离子体室中。从NF 3 N气体形成等离子体。通过来自NF 3 N 3气体的等离子体通过光致抗蚀剂掩模蚀刻电介质层。

16. 发明申请

US20060166145A1 Method providing an improved bi-layer photoresist pattern 审中-公开
标题翻译：提供改进的双层光致抗蚀剂图案的方法
公开(公告)号：US20060166145A1
公开(公告)日：2006-07-27
申请号：US11388859
申请日：2006-03-24
申请人： Hanzhong Xiao , Helen Zhu , Kuo-Lung Tang , S.M. Sadjadi
发明人： Hanzhong Xiao , Helen Zhu , Kuo-Lung Tang , S.M. Sadjadi
IPC分类号： G03F7/00
CPC分类号： H01L21/31138 , H01L21/0273 , H01L21/0332 , H01L21/31144
摘要： A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer.
摘要翻译：提供了蚀刻层中的特征的方法。在该层上形成聚合物材料的底层。在底层上形成顶层图像层。顶部图像层暴露于图案化辐射。在顶部图像层中开发出图案。图案通过减少的干蚀刻从顶部图像层转移到底层。该层被蚀刻通过底层，其中顶部图像层被完全去除，并且在蚀刻该层期间将底层用作图案掩模以将图案从底层转移到该层。

17. 发明申请

US20070042607A1 Etch features with reduced line edge roughness 有权
标题翻译：蚀刻特征，线边缘粗糙度降低
公开(公告)号：US20070042607A1
公开(公告)日：2007-02-22
申请号：US11208098
申请日：2005-08-18
申请人： S.M. Sadjadi , Eric Hudson
发明人： S.M. Sadjadi , Eric Hudson
IPC分类号： H01L29/00 , H01L21/302 , B44C1/22
CPC分类号： G03F7/40 , G03F7/405 , H01L21/0273 , H01L21/0337 , H01L21/31144
摘要： A method for forming a feature in a layer with reduced line edge roughening is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A sidewall layer with a thickness less than 100 nm is formed over the sidewalls of the photoresist features by performing for a plurality of cycles. Each cycle comprises depositing a layer on the photoresist layer wherein the deposited layer has a thickness between a monolayer to 20 nm. Features are etched into the layer through the photoresist features. The photoresist layer and sidewall layer are stripped.
摘要翻译：提供了一种在具有减少的线边缘粗糙度的层中形成特征的方法。在该层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。通过执行多个循环，在光致抗蚀剂特征的侧壁上形成厚度小于100nm的侧壁层。每个循环包括在光致抗蚀剂层上沉积一层，其中沉积层的厚度介于单层至20nm之间。通过光致抗蚀剂特征将特征蚀刻到该层中。剥离光致抗蚀剂层和侧壁层。

18. 发明申请

US20060290012A1 Multiple mask process with etch mask stack 有权
标题翻译：具有蚀刻掩模叠层的多重掩模工艺
公开(公告)号：US20060290012A1
公开(公告)日：2006-12-28
申请号：US11170273
申请日：2005-06-28
申请人： S.M. Sadjadi
发明人： S.M. Sadjadi
IPC分类号： H01L21/302
CPC分类号： H01L21/0338 , H01L21/0331 , H01L21/0337
摘要： A method for forming etch features in an etch layer over a substrate is provided. An etch mask stack is formed over the etch layer. A first mask is formed over the etch mask stack. A sidewall layer is formed over the first mask, which reduces the widths of the spaces defined by the first mask. A first set of features is etched into the etch mask stack through the sidewall layer. The mask and sidewall layer are removed. An additional feature step is performed, comprising forming an additional mask over the etch mask stack, forming a sidewall layer over the additional mask, etching a second set of features at least partially into the etch mask stack. A plurality of features is etched into the etch layer through the first set of features and the second set of features in the etch mask stack.
摘要翻译：提供了一种在衬底上的蚀刻层中形成蚀刻特征的方法。在蚀刻层上形成蚀刻掩模叠层。在蚀刻掩模叠层上形成第一掩模。在第一掩模上形成侧壁层，这减少了由第一掩模限定的空间的宽度。通过侧壁层将第一组特征蚀刻到蚀刻掩模叠层中。去除掩模和侧壁层。执行附加特征步骤，包括在蚀刻掩模叠层上形成附加掩模，在附加掩模上形成侧壁层，至少部分蚀刻第二组特征至蚀刻掩模叠层。多个特征通过第一组特征和蚀刻掩模叠层中的第二组特征蚀刻到蚀刻层中。

19. 发明申请

US20060259886A1 Computer readable mask shrink control processor 有权
公开(公告)号：US20060259886A1
公开(公告)日：2006-11-16
申请号：US11126708
申请日：2005-05-10
申请人： S.M. Sadjadi , Nicolas Bright
发明人： S.M. Sadjadi , Nicolas Bright
IPC分类号： G06F17/50 , G06F19/00 , G03F1/00
CPC分类号： G03F1/36
摘要： An apparatus comprising computer readable media is provided. The computer readable media comprises computer readable code for receiving a feature layout and computer readable code for applying shrink correction on the feature layout. The computer readable code for applying the shrink correction comprises providing corner cutouts, adjusting line width and length, shape modifications, etc. for forming features in a patterned layer.

20. 发明申请

US20060205220A1 Stabilized photoresist structure for etching process 有权
标题翻译：用于蚀刻工艺的稳定光致抗蚀剂结构
公开(公告)号：US20060205220A1
公开(公告)日：2006-09-14
申请号：US11076087
申请日：2005-03-08
申请人： Eric Hudson , S.M. Sadjadi
发明人： Eric Hudson , S.M. Sadjadi
IPC分类号： H01L21/311 , H01L21/4763
CPC分类号： H01L21/31144 , H01L21/0273 , H01L21/31138 , H01L21/32139 , H01L21/76807 , H01L2221/1063 , Y10S438/942 , Y10S438/945 , Y10S438/947
摘要： A method for forming features in an etch layer is provided. A first mask is formed over the etch layer where the first mask defines a plurality of spaces with widths. The first mask is laterally etched where the etched first mask defines a plurality of spaces with widths that are greater than the widths of the spaces of the first mask. A sidewall layer is formed over the etched first mask where the sidewall layer defines a plurality of spaces with widths that are less than the widths of the spaces defined by the etched first mask. Features are etched into the etch layer through the sidewall layer, where the features have widths that are smaller than the widths of the spaces defined by the etched first mask. The mask and sidewall layer are removed.
摘要翻译：提供了一种在蚀刻层中形成特征的方法。在蚀刻层上形成第一掩模，其中第一掩模限定具有宽度的多个空间。第一掩模被横向蚀刻，其中蚀刻的第一掩模限定宽度大于第一掩模的空间的宽度的多个空间。在蚀刻的第一掩模上形成侧壁层，其中侧壁层限定宽度小于由蚀刻的第一掩模限定的空间的宽度的多个空间。特征通过侧壁蚀刻到蚀刻层中，其中特征具有的宽度小于由蚀刻的第一掩模限定的空间的宽度。去除掩模和侧壁层。

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