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11. 发明授权

US08877004B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08877004B2
公开(公告)日：2014-11-04
申请号：US12866545
申请日：2009-02-06
申请人： Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Masaru Sasaki
发明人： Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Masaru Sasaki
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32 , H05H1/46
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32238
摘要： A dielectric plate 20 is provided at a ceiling surface facing a susceptor 3 of a processing chamber 2, and a slot antenna 30 having a multiple number of microwave transmissive slots 33 is provided on a top surface of the dielectric plate 20. A protrusion member 21 configured as a separate member from the dielectric plate 20 is provided on a peripheral portion of a bottom surface of the dielectric plate 20 so as to prevent an abnormal electric discharge. Electric field intensity in the vicinity of the dielectric plate 20 is controlled by adjusting a gap between an outer peripheral surface 22 of a cylindrical part of the protrusion member 21 and an inner peripheral surface 5a of a sidewall of the processing chamber 2 or by adjusting a thickness of the cylindrical part of the protrusion member 21.
摘要翻译：电介质板20设置在面向处理室2的基座3的顶面上，并且具有多个微波透射槽33的缝隙天线30设置在电介质板20的顶表面上。突起构件21 在电介质板20的底面的周边部设置有与电介质板20分离的部件，以防止异常放电。通过调整突起部件21的圆筒部的外周面22与处理室2的侧壁的内周面5a之间的间隙，调整电介质板20附近的电场强度，突出部件21的圆筒部的厚度。

12. 发明授权

US08617865B2 Tannase, gene encoding same, and process for producing same 有权
标题翻译：鞣酸酶，编码基因的基因及其制备方法
公开(公告)号：US08617865B2
公开(公告)日：2013-12-31
申请号：US13124510
申请日：2009-10-02
申请人： Megumi Nakagawa , Naoki Matsumoto , Hitoshi Amano , Shotaro Yamaguchi
发明人： Megumi Nakagawa , Naoki Matsumoto , Hitoshi Amano , Shotaro Yamaguchi
IPC分类号： C12N9/14
CPC分类号： C12N9/18 , C12P7/42
摘要： Disclosed is a thermostable tannase derived from a microorganism. Specifically disclosed is a thermostable tannase derived from Aspergillus awamori or Aspergillus niger. A preferred embodiment of the tannase has the following chemoenzymatic properties: (1) activity: to act on a depside bond to thereby cause hydrolysis; (2) molecular weight: about 230,000 Da (as measured by gel filtration); and (3) thermal stability: stable at a temperature up to 65° C. (pH 5.0, 30 min.)
摘要翻译：公开了一种衍生自微生物的热稳定性鞣酸酶。具体公开了源自泡盛曲霉或黑曲霉的热稳定性鞣酸酶。鞣酸酶的优选实施方案具有以下化学酶学性质：（1）活性：作用于脱附键从而引起水解; （2）分子量：约230,000Da（通过凝胶过滤测量）; 和（3）热稳定性：在高达65℃的温度下稳定（pH5.0,30分钟）

13. 外观设计

USD694791S1 Baffle plate for manufacturing semiconductor 有权
公开(公告)号：USD694791S1
公开(公告)日：2013-12-03
申请号：US29416088
申请日：2012-03-19
申请人： Naoki Matsumoto , Jun Yoshikawa
设计人： Naoki Matsumoto , Jun Yoshikawa

14. 外观设计

USD694790S1 Baffle plate for manufacturing semiconductor 有权
标题翻译：挡板用于制造半导体
公开(公告)号：USD694790S1
公开(公告)日：2013-12-03
申请号：US29416082
申请日：2012-03-19
申请人： Naoki Matsumoto , Jun Yoshikawa
设计人： Naoki Matsumoto , Jun Yoshikawa

15. 发明申请

US20130134434A1 NITRIDE SEMICONDUCTOR SUBSTRATE 有权
标题翻译：氮化物半导体基板
公开(公告)号：US20130134434A1
公开(公告)日：2013-05-30
申请号：US13307396
申请日：2011-11-30
申请人： Hidenori Mikami , Naoki Matsumoto , Hideki Osada , Yusuke Yoshizumi , Sayuri Yamaguchi
发明人： Hidenori Mikami , Naoki Matsumoto , Hideki Osada , Yusuke Yoshizumi , Sayuri Yamaguchi
IPC分类号： H01L29/15
CPC分类号： H01S5/3202 , B82Y20/00 , H01L29/045 , H01L29/2003 , H01L29/7787 , H01L29/808 , H01L29/812 , H01S5/2201 , H01S5/34333 , H01S2301/176
摘要： A nitride semiconductor device includes a main surface and an indicator portion. The main surface is a plane inclined by at least 71° and at most 79° in a [1-100] direction from a (0001) plane or a plane inclined by at least 71° and at most 79° in a [−1100] direction from a (000-1) plane. The indicator portion indicates a (−1017) plane, a (10-1-7) plane, or a plane inclined by at least −4° and at most 4° in the [1-100] direction from these planes and inclined by at least −0.5° and at most 0.5° in a direction orthogonal to the [1-100] direction.
摘要翻译：氮化物半导体器件包括主表面和指示器部分。主表面是在[0001]面或[-1100]中倾斜至少71°和最多79°的平面的[1-100]方向上倾斜至少71°和至多79°的平面 ]方向从（000-1）平面。指示器部分表示（-1017）面，（10-1-7）面，或在这些平面沿[1-100]方向倾斜至少-4°至最多4°的平面，并且倾斜于在与[1-100]方向正交的方向上至少为-0.5°且至多0.5°。

16. 发明授权

US08410817B2 Driver circuit 失效
标题翻译：驱动电路
公开(公告)号：US08410817B2
公开(公告)日：2013-04-02
申请号：US12858295
申请日：2010-08-17
申请人： Yuji Kuwana , Naoki Matsumoto , Yasuhiro Urabe
发明人： Yuji Kuwana , Naoki Matsumoto , Yasuhiro Urabe
IPC分类号： H03K19/0175 , H03B1/00
CPC分类号： H03K19/001 , H03K17/04126 , H03K19/0136 , H03K2217/0036
摘要： A level switch circuit receives a digital input signal, and generates a level signal having a voltage level that corresponds to the value of the input signal thus received. A buffer circuit receives a level signal, and outputs the level signal via an output terminal thereof. A bias current generating circuit generates a bias current including a DC component having a constant level and a variable component that changes according to the input signal, and supplies the bias current thus generated to a buffer circuit. The bias current generating circuit detects an edge of the input signal, and raises the bias current by a predetermined amount for a predetermined period of time after the edge thus detected.
摘要翻译：电平开关电路接收数字输入信号，并产生具有与所接收的输入信号的值对应的电压电平的电平信号。缓冲电路接收电平信号，并通过其输出端输出电平信号。偏置电流产生电路产生包括具有恒定电平的DC分量和根据输入信号而变化的可变分量的偏置电流，并将由此产生的偏置电流提供给缓冲电路。偏置电流产生电路检测输入信号的边缘，并且在如此检测到的边缘之后的预定时间段内将偏置电流提高预定量。

17. 发明授权

US08268643B2 Substrate, epitaxial layer provided substrate, method for producing substrate, and method for producing epitaxial layer provided substrate 有权
标题翻译：基板，外延层提供的基板，制造基板的方法以及用于制造外延层的基板的方法
公开(公告)号：US08268643B2
公开(公告)日：2012-09-18
申请号：US13062590
申请日：2009-09-04
申请人： Naoki Matsumoto
发明人： Naoki Matsumoto
IPC分类号： H01L21/66
CPC分类号： C30B29/406 , C30B25/20 , H01L21/02395 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02642 , H01L21/02647 , H01L21/02658
摘要： The present invention provides a substrate formed at a low cost and having a controlled plate shape, an epitaxial layer provided substrate obtained by forming an epitaxial layer on the substrate, and methods for producing them. The method for producing the substrate according to the present invention includes an ingot growing step serving as a step of preparing an ingot formed of gallium nitride (GaN); and a slicing step serving as a step of obtaining a substrate formed of gallium nitride, by slicing the ingot. In the slicing step, the substrate thus obtained by the slicing has a main surface with an arithmetic mean roughness Ra of not less than 0.05 μm and not more than 1 μm on a line of 10 mm.
摘要翻译：本发明提供一种以低成本形成并具有受控板形状的基板，通过在基板上形成外延层而获得的外延层提供的基板及其制造方法。根据本发明的基板的制造方法包括：铸锭生长步骤，用于制备由氮化镓（GaN）形成的铸锭的步骤; 以及作为通过切割锭来获得由氮化镓形成的衬底的步骤的切片步骤。在切片工序中，通过切片得到的基板在10mm的线上具有算术平均粗糙度Ra为0.05μm以上且1μm以下的主面。

18. 发明授权

US08141514B2 Plasma processing apparatus, plasma processing method, and storage medium 失效
标题翻译：等离子体处理装置，等离子体处理方法和存储介质
公开(公告)号：US08141514B2
公开(公告)日：2012-03-27
申请号：US11686551
申请日：2007-03-15
申请人： Masanobu Honda , Naoki Matsumoto , Satoshi Tanaka , Yutaka Matsui
发明人： Masanobu Honda , Naoki Matsumoto , Satoshi Tanaka , Yutaka Matsui
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32532 , H01J37/32082 , H01J37/32623 , H01L21/3065
摘要： A plasma processing apparatus having a substrate processing chamber, which enables leakage of plasma into an exhaust space to be prevented. The substrate processing chamber has therein a processing space in which plasma processing is carried out on a substrate, an exhaust space for exhausting gas out of the processing space, and an exhaust flow path that communicates the exhaust space and the processing space together. The plasma processing apparatus further has a grounding component that is electrically grounded and is disposed in the exhaust flow path. The grounding component has a conducting portion made of a conductive material, and the conducting portion has an exposed area exposed to the exhaust flow path in a range of 100 to 1000 cm2.
摘要翻译：一种具有基板处理室的等离子体处理装置，能够防止等离子体泄漏到排气空间。基板处理室具有处理空间，其中在基板上执行等离子体处理，将用于从处理空间排出气体的排气空间和将排气空间与处理空间连通在一起的排气流路。等离子体处理装置还具有电接地并设置在排气流路中的接地部件。接地部件具有由导电材料制成的导电部分，导电部分具有暴露于排气流路的暴露区域，范围为100至1000cm 2。

19. 发明授权

US08034213B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08034213B2
公开(公告)日：2011-10-11
申请号：US11694083
申请日：2007-03-30
申请人： Naoki Matsumoto , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Noriaki Kodama , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
发明人： Naoki Matsumoto , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Noriaki Kodama , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01J37/32174 , H01J37/32091
摘要： A plasma processing apparatus includes a processing vessel capable of being vacuum evacuated; a first electrode disposed in the processing vessel in a state electrically floating via an insulating member or a space; a second electrode, arranged in the processing vessel to face and be in parallel to the first electrode with a specific interval, supporting a substrate to be processed; a processing gas supply unit for supplying a desired processing gas into a processing space surrounded by the first electrode, the second electrode and a sidewall of the processing vessel; and a first radio frequency power supply unit for applying a first radio frequency power to the second electrode to generate a plasma of the processing gas in the processing space. An electrostatic capacitance between the first electrode and the processing vessel is set such that a desired plasma density distribution is obtained for the generated plasma.
摘要翻译：一种等离子体处理装置，其特征在于，包括：真空抽真空处理容器; 以处于通过绝缘构件或空间电浮动的状态设置在处理容器中的第一电极; 第二电极，布置在处理容器中以特定间隔面对并平行于第一电极，支撑待处理的基板; 处理气体供给单元，用于将期望的处理气体供给到被处理容器的第一电极，第二电极和侧壁包围的处理空间中; 以及第一射频电源单元，用于向所述第二电极施加第一射频功率以在所述处理空间中产生所述处理气体的等离子体。第一电极和处理容器之间的静电电容被设定为使得所产生的等离子体获得期望的等离子体密度分布。

20. 发明申请

US20110214815A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20110214815A1
公开(公告)日：2011-09-08
申请号：US13113330
申请日：2011-05-23
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32697 , H01J37/32706 , H01J2237/334 , H01L21/3065
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。

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