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1. 发明申请

US20120329245A1 Group III Nitride Crystal and Method for Producing the Same 有权
标题翻译： III族氮化物晶体及其制造方法
公开(公告)号：US20120329245A1
公开(公告)日：2012-12-27
申请号：US13338263
申请日：2011-12-28
申请人： Koji Uematsu , Hideki Osada , Seiji Nakahata , Shinsuke Fujiwara
发明人： Koji Uematsu , Hideki Osada , Seiji Nakahata , Shinsuke Fujiwara
IPC分类号： H01L21/78 , C01B21/06
CPC分类号： H01L29/045 , C01B21/0632 , C01P2002/90 , C01P2006/12 , C30B29/403 , C30B29/406 , C30B33/06 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/16 , H01L33/32
摘要： A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates 10p and 10q having a main plane from a group III nitride bulk crystal 1, the main planes 10pm and 10qm having a plane orientation with an off-angle of five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates 10p and 10q adjacent to each other such that the main planes 10pm and 10qm of the substrates 10p and 10q are parallel to each other and each [0001] direction of the substrates 10p and 10q coincides with each other, and growing a group III nitride crystal 20 on the main planes 10pm and 10qm of the substrates 10p and 10q.
摘要翻译：本发明的III族氮化物晶体的制造方法包括从III族氮化物本体晶体1切割出具有主面的多个III族氮化物晶体基板10p，10q，主平面10pm，10qm具有平面取向相对于从{20-21}，{20-2-1}，{22-41}和{22-41}组成的组中的晶体 - 几何等效平面取向具有5度或更小的偏离角度， 22-4-1}，使基板10p和10q彼此相邻地布置，使得基板10p和10q的主平面10pm和10qm彼此平行，并且基板10p和10q的每个[0001]方向与并且在基板10p和10q的主平面10pm和10qm上生长III族氮化物晶体20。

2. 发明授权

US08228963B2 Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer 失效
标题翻译：氮化镓系半导体光学元件，氮化镓系半导体光学元件的制造方法以及外延片
公开(公告)号：US08228963B2
公开(公告)日：2012-07-24
申请号：US12715860
申请日：2010-03-02
申请人： Yohei Enya , Yusuke Yoshizumi , Hideki Osada , Keiji Ishibashi , Katsushi Akita , Masaki Ueno
发明人： Yohei Enya , Yusuke Yoshizumi , Hideki Osada , Keiji Ishibashi , Katsushi Akita , Masaki Ueno
IPC分类号： H01S5/00
CPC分类号： H01L33/18 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/32 , H01S5/20 , H01S5/2009 , H01S5/3202 , H01S5/34333
摘要： A gallium nitride-based semiconductor optical device is provided that includes an indium-containing gallium nitride-based semiconductor layer that exhibit low piezoelectric effect and high crystal quality. The gallium nitride-based semiconductor optical device 11a includes a GaN support base 13, a GaN-based semiconductor region 15, and well layers 19. A primary surface 13a tilts from a surface orthogonal to a reference axis that extends in a direction from one crystal axis of the m-axis and the a-axis of GaN toward the other crystal axis. The tilt angle AOFF is 0.05 degree or more to less than 15 degrees. The angle AOFF is equal to the angle defined by a vector VM and a vector VN. The inclination of the primary surface is shown by a typical m-plane SM and m-axis vector VM. The GaN-based semiconductor region 15 is provided on the primary surface 13a. In the well layers 19 in an active layer 17, both the m-plane and the a-plane of the well layers 19 tilt from a normal axis AN of the primary surface 13a. The indium content of the well layers 19 is 0.1 or more.
摘要翻译：提供一种氮化镓系半导体光学元件，其包括显示低压电效应和高结晶质量的含铟氮化镓系半导体层。氮化镓系半导体光学元件11a包括GaN支撑基底13，GaN基半导体区域15以及阱层19.初级表面13a从与从一个晶体的方向延伸的参考轴正交的表面倾斜 m轴的a轴和另一个晶轴的GaN的a轴。倾角AOFF为0.05度以上至小于15度。角度AOFF等于由矢量VM和矢量VN定义的角度。主表面的倾角由典型的m面SM和m轴矢量VM表示。 GaN基半导体区域15设置在主表面13a上。在有源层17的阱层19中，阱层19的m面和a面都从主面13a的法线轴AN倾斜。阱层19的铟含量为0.1以上。

3. 发明授权

US09760070B2 Variable speed device and variable speed system 有权
公开(公告)号：US09760070B2
公开(公告)日：2017-09-12
申请号：US14425967
申请日：2012-11-14
申请人： Hideki Osada
发明人： Hideki Osada
IPC分类号： G05B15/02 , H02P27/08 , G01P13/04 , G01D7/02
CPC分类号： G05B15/02 , G01D7/02 , G01P13/04 , H02P27/085
摘要： A variable speed device that drives an electric motor includes a first acquiring unit that acquires a first parameter concerning an operation state of the electric motor, a second acquiring unit that acquires a second parameter concerning the operation state of the electric motor, the second parameter being related to the first parameter, a third acquiring unit that acquires a third parameter concerning a setting state of the electric motor, and a display control unit that simultaneously displays, on one display screen, a first display item corresponding to the acquired first parameter, a second display item corresponding to the acquired second parameter, and a third display item corresponding to the acquired third parameter. The display control unit graphically displays the first display item and the second display item in association with each other.

4. 发明申请

US20150220070A1 VARIABLE SPEED DEVICE AND VARIABLE SPEED SYSTEM 有权
标题翻译：变速装置和变速系统
公开(公告)号：US20150220070A1
公开(公告)日：2015-08-06
申请号：US14425967
申请日：2012-11-14
申请人： Hideki OSADA
发明人： Hideki Osada
IPC分类号： G05B15/02
CPC分类号： G05B15/02 , G01D7/02 , G01P13/04 , H02P27/085
摘要： A variable speed device that drives an electric motor includes a first acquiring unit that acquires a first parameter concerning an operation state of the electric motor, a second acquiring unit that acquires a second parameter concerning the operation state of the electric motor, the second parameter being related to the first parameter, a third acquiring unit that acquires a third parameter concerning a setting state of the electric motor, and a display control unit that simultaneously displays, on one display screen, a first display item corresponding to the acquired first parameter, a second display item corresponding to the acquired second parameter, and a third display item corresponding to the acquired third parameter. The display control unit graphically displays the first display item and the second display item in association with each other.
摘要翻译：驱动电动机的变速装置包括获取与电动机的运转状态有关的第一参数的第一取得部，取得与电动机的运转状态相关的第二参数的第二取得部，第二参数为与第一参数相关的第三获取单元，获取关于电动机的设置状态的第三参数的第三获取单元，以及在一个显示屏幕上同时显示与获取的第一参数相对应的第一显示项目的显示控制单元，对应于所获取的第二参数的第二显示项目以及与所获取的第三参数相对应的第三显示项目。显示控制单元相互关联地图形显示第一显示项目和第二显示项目。

5. 发明授权

US07047742B2 Turbocharged engine and method for preventing surging in compressor 有权
标题翻译：涡轮增压发动机及防止压缩机涌流的方法
公开(公告)号：US07047742B2
公开(公告)日：2006-05-23
申请号：US10854530
申请日：2004-05-26
申请人： Kazutoshi Kono , Kenji Hatano , Shinichiro Kawai , Hideki Osada
发明人： Kazutoshi Kono , Kenji Hatano , Shinichiro Kawai , Hideki Osada
IPC分类号： F02B33/44 , F02B37/12 , F02M25/07
CPC分类号： F02D41/0055 , F02B37/10 , F02B37/16 , F02D41/0005 , F02D41/0007 , F02M26/02 , F02M26/05 , Y02T10/144 , Y02T10/42 , Y02T10/47
摘要： The turbocharged engine in accordance with the present invention comprises an EGR unit having an EGR passage linking an intake passage and an exhaust passage and an EGR valve provided in the EGR passage. The engine further comprises deceleration deciding unit for deciding as to whether a vehicle decelerates, and intake air release unit for opening the EGR valve and causing part of the intake air present in the intake passage to flow into the exhaust passage through the EGR passage when the deceleration deciding unit decides that the vehicle is decelerating.
摘要翻译：根据本发明的涡轮增压发动机包括具有连接进气通道和排气通道的EGR通道和设置在EGR通道中的EGR阀的EGR单元。发动机还包括减速判定单元，用于判定车辆是否减速，以及用于打开EGR阀的进气释放单元，并使存在于进气通道中的部分进气通过EGR通道流入排气通道，减速判定单元判定车辆减速。

6. 发明授权

US08598685B2 GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof 有权
标题翻译： GaN单晶衬底及其制造方法和GaN基半导体器件及其制造方法
公开(公告)号：US08598685B2
公开(公告)日：2013-12-03
申请号：US12817753
申请日：2010-06-17
申请人： Shinsuke Fujiwara , Koji Uematsu , Hideki Osada , Seiji Nakahata
发明人： Shinsuke Fujiwara , Koji Uematsu , Hideki Osada , Seiji Nakahata
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L29/36 , H01L33/0075 , H01L33/16
摘要： A GaN single crystal substrate has a main surface with an area of not less than 10 cm2, the main surface has a plane orientation inclined by not less than 65° and not more than 85° with respect to one of a (0001) plane and a (000-1) plane, and the substrate has at least one of a substantially uniform distribution of a carrier concentration in the main surface, a substantially uniform distribution of a dislocation density in the main surface, and a photoelasticity distortion value of not more than 5×10−5, the photoelasticity distortion value being measured by photoelasticity at an arbitrary point in the main surface when light is applied perpendicularly to the main surface at an ambient temperature of 25° C. Thus, the GaN single crystal substrate suitable for manufacture of a GaN-based semiconductor device having a small variation of characteristics can be obtained.
摘要翻译： GaN单晶衬底具有面积不小于10cm 2的主表面，主表面相对于（0001）面和（0001）面之一具有倾斜不小于65°且不大于85°的面取向（000-1）面，并且基板具有在主表面中载流子浓度基本均匀分布中的至少一个，主表面中位错密度的基本均匀分布，并且光弹性变形值不大在5×10-5以下的情况下，在25℃的环境温度下垂直于主表面照射主表面的任意点时，通过光弹性测定光弹性失真值。因此，GaN单晶基板适合可以获得具有小的特性变化的GaN基半导体器件的制造。

7. 发明授权

US08524575B2 Group III nitride crystal and method for producing the same 有权
标题翻译： III族氮化物晶体及其制造方法
公开(公告)号：US08524575B2
公开(公告)日：2013-09-03
申请号：US13338263
申请日：2011-12-28
申请人： Koji Uematsu , Hideki Osada , Seiji Nakahata , Shinsuke Fujiwara
发明人： Koji Uematsu , Hideki Osada , Seiji Nakahata , Shinsuke Fujiwara
IPC分类号： H01L21/00 , H01L29/20 , H01L21/20 , H01L21/06
CPC分类号： H01L29/045 , C01B21/0632 , C01P2002/90 , C01P2006/12 , C30B29/403 , C30B29/406 , C30B33/06 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/16 , H01L33/32
摘要： A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates 10p and 10q having a main plane from a group III nitride bulk crystal 1, the main planes 10pm and 10qm having a plane orientation with an off-angle of five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates 10p and 10q adjacent to each other such that the main planes 10pm and 10qm of the substrates 10p and 10q are parallel to each other and each [0001] direction of the substrates 10p and 10q coincides with each other, and growing a group III nitride crystal 20 on the main planes 10pm and 10qm of the substrates 10p and 10q.
摘要翻译：本发明的III族氮化物晶体的制造方法包括从III族氮化物本体晶体1切割出具有主面的多个III族氮化物晶体基板10p，10q，主平面10pm，10qm具有平面取向相对于从{20-21}，{20-2-1}，{22-41}和{22-41}组成的组中的晶体 - 几何等效平面取向具有5度或更小的偏离角度， 22-4-1}，使基板10p和10q彼此相邻地布置，使得基板10p和10q的主平面10pm和10qm彼此平行，并且基板10p和10q的每个[0001]方向与并且在基板10p和10q的主平面10pm和10qm上生长III族氮化物晶体20。

8. 发明授权

US08471366B2 Nitride semiconductor substrate 有权
标题翻译：氮化物半导体衬底
公开(公告)号：US08471366B2
公开(公告)日：2013-06-25
申请号：US13307396
申请日：2011-11-30
申请人： Hidenori Mikami , Naoki Matsumoto , Hideki Osada , Yusuke Yoshizumi , Sayuri Yamaguchi
发明人： Hidenori Mikami , Naoki Matsumoto , Hideki Osada , Yusuke Yoshizumi , Sayuri Yamaguchi
IPC分类号： H01L29/05
CPC分类号： H01S5/3202 , B82Y20/00 , H01L29/045 , H01L29/2003 , H01L29/7787 , H01L29/808 , H01L29/812 , H01S5/2201 , H01S5/34333 , H01S2301/176
摘要： A nitride semiconductor device includes a main surface and an indicator portion. The main surface is a plane inclined by at least 71° and at most 79° in a [1-100] direction from a (0001) plane or a plane inclined by at least 71° and at most 79° in a [−1100] direction from a (000-1) plane. The indicator portion indicates a (−1017) plane, a (10-1-7) plane, or a plane inclined by at least −4° and at most 4° in the [1-100] direction from these planes and inclined by at least −0.5° and at most 0.5° in a direction orthogonal to the [1-100] direction.
摘要翻译：氮化物半导体器件包括主表面和指示器部分。主表面是在[0001]面或[-1100]中倾斜至少71°和最多79°的平面的[1-100]方向上倾斜至少71°和至多79°的平面 ]方向从（000-1）平面。指示器部分表示（-1017）面，（10-1-7）面，或在这些平面沿[1-100]方向倾斜至少-4°至最多4°的平面，并且倾斜于在与[1-100]方向正交的方向上至少为-0.5°且至多0.5°。

9. 发明申请

US20120074403A1 METHOD FOR GROWING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE 审中-公开
标题翻译：用于生长GaN晶体和GaN晶体衬底的方法
公开(公告)号：US20120074403A1
公开(公告)日：2012-03-29
申请号：US13111595
申请日：2011-05-19
申请人： Shinsuke Fujiwara , Koji Uematsu , Hideki Osada
发明人： Shinsuke Fujiwara , Koji Uematsu , Hideki Osada
IPC分类号： H01L29/20 , C30B19/12 , C30B19/02 , C30B25/20 , C30B23/02
CPC分类号： H01L21/0262 , C30B23/025 , C30B25/18 , H01L21/02389 , H01L21/02433 , H01L21/0254
摘要： The present invention is to provide GaN crystal growing method for growing a GaN crystal with few stacking faults on a GaN seed crystal substrate having a main surface inclined at an angle of 20° to 90° from the (0001) plane, and also to provide a GaN crystal substrate with few stacking faults. A method for growing a GaN crystal includes the steps of preparing a GaN seed crystal substrate 10 having a main surface 10m inclined at an angle of 20° to 90° from a (0001) plane 10c and growing a GaN crystal 20 on the GaN seed crystal substrate 10. The GaN seed crystal substrate 10 and the GaN crystal 20 have a difference in impurity concentration of 3×1018 cm−3 or less.
摘要翻译：本发明是提供一种GaN晶体生长方法，用于在具有从（0001）面倾斜20°至90°的主表面的GaN晶种衬底上生长具有很少堆垛层错的GaN晶体，并且还提供具有很少层叠缺陷的GaN晶体衬底。一种用于生长GaN晶体的方法包括以下步骤：制备具有从（0001）面10c以20°至90°的角度倾斜的主表面10m并在GaN晶种上生长GaN晶体20的GaN晶种衬底10 GaN晶种基板10和GaN晶体20的杂质浓度差为3×1018cm-3以下。

10. 发明申请

US20110057197A1 GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THEREOF AND GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF 有权
标题翻译： GaN单晶基板及其制造方法和GaN基半导体器件及其制造方法
公开(公告)号：US20110057197A1
公开(公告)日：2011-03-10
申请号：US12817753
申请日：2010-06-17
申请人： Shinsuke FUJIWARA , Koji Uematsu , Hideki Osada , Seiji Nakahata
发明人： Shinsuke FUJIWARA , Koji Uematsu , Hideki Osada , Seiji Nakahata
IPC分类号： H01L29/20 , C30B25/18 , H01L21/20
CPC分类号： H01L29/2003 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L29/36 , H01L33/0075 , H01L33/16
摘要： A GaN single crystal substrate has a main surface with an area of not less than 10 cm2, the main surface has a plane orientation inclined by not less than 65° and not more than 85° with respect to one of a (0001) plane and a (000-1) plane, and the substrate has at least one of a substantially uniform distribution of a carrier concentration in the main surface, a substantially uniform distribution of a dislocation density in the main surface, and a photoelasticity distortion value of not more than 5×10−5, the photoelasticity distortion value being measured by photoelasticity at an arbitrary point in the main surface when light is applied perpendicularly to the main surface at an ambient temperature of 25° C. Thus, the GaN single crystal substrate suitable for manufacture of a GaN-based semiconductor device having a small variation of characteristics can be obtained.
摘要翻译： GaN单晶衬底具有面积不小于10cm 2的主表面，主表面相对于（0001）面和（0001）面之一具有倾斜不小于65°且不大于85°的面取向（000-1）面，并且基板具有在主表面中载流子浓度基本均匀分布中的至少一个，主表面中位错密度的基本均匀分布，并且光弹性变形值不大在5×10-5以下的情况下，在25℃的环境温度下垂直于主表面照射主表面的任意点时，通过光弹性测定光弹性失真值。因此，GaN单晶基板适合可以获得具有小的特性变化的GaN基半导体器件的制造。

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