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11. 发明授权

US06962828B1 Methods for manufacturing a light-emitting device 失效
标题翻译：制造发光装置的方法
公开(公告)号：US06962828B1
公开(公告)日：2005-11-08
申请号：US09711908
申请日：2000-11-15
申请人： Norikatsu Koide , Masayoshi Koike , Shiro Yamasaki , Isamu Akasaki , Hiroshi Amano
发明人： Norikatsu Koide , Masayoshi Koike , Shiro Yamasaki , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01L21/86 , H01L33/32 , H01S5/00 , H01S5/02 , H01S5/323 , H01L21/00
CPC分类号： H01L33/32 , H01S5/0213 , H01S5/32341
摘要： A novel light-emitting device includes a saphire substrate with a light-emitting layer comprising InXGa1−XN, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength λ of emitted light.
摘要翻译：一种新颖的发光器件包括具有包含In x N Ga 1-X N的发光层的锡箔衬底，其中铟摩尔分数X的临界值为通过铟摩尔分数X和发射光的波长λ之间的新衍生关系来确定。

12. 发明授权

US06881651B2 Methods and devices using group III nitride compound semiconductor 有权
标题翻译：使用III族氮化物化合物半导体的方法和装置
公开(公告)号：US06881651B2
公开(公告)日：2005-04-19
申请号：US10382647
申请日：2003-03-07
申请人： Norikatsu Koide , Hisaki Kato
发明人： Norikatsu Koide , Hisaki Kato
IPC分类号： C30B25/02 , C30B29/40 , H01L21/20 , H01L21/205 , H01L33/16 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/323
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02647 , Y10S117/902 , Y10S438/932
摘要： A layer comprising silicon oxide (SiO2) is formed on (111) plane of a silicon (Si) substrate in a striped pattern which is longer in the [1-10] axis direction perpendicular to the [110] axis direction. Then a group III nitride compound semiconductor represented by a general formula AlxGayIn1−x−yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) is laminated thereon. The group III nitride compound semiconductor represented by a general formula AlxGayIn1−x−yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) grows epitaxially on the substrate-exposed regions B which are not covered by the SiO2 layer, and grows epitaxially on the SiO2 layer in lateral direction from the regions B. Consequently, a group III nitride compound semiconductor having no dislocations can be obtained.
摘要翻译：在硅（Si）衬底的（111）面上以垂直于[...]的[1-10]轴方向上较长的条纹图案形成包含氧化硅（SiO 2） 110]轴方向。然后，由通式Al 1-xy N（0 <= x <= 1）表示的III族氮化物化合物半导体，0 <= y <= 1，0 <= x + y <= 1）。由通式Al 1-xy N表示的III族氮化物化合物半导体（0≤x≤1， 0 <= y <= 1，0 <= x + y <= 1）在未被SiO 2层覆盖的衬底暴露区域B上外延生长，并且在SiO 在区域B的横向方向上形成第二层。因此，可以获得没有位错的III族氮化物化合物半导体。

13. 发明授权

US06818926B2 Method for manufacturing gallium nitride compound semiconductor 失效
公开(公告)号：US06818926B2
公开(公告)日：2004-11-16
申请号：US10391648
申请日：2003-03-20
申请人： Norikatsu Koide
发明人： Norikatsu Koide
IPC分类号： H01L3300
CPC分类号： H01L21/0254 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007
摘要： An Al0.15Ga0.85N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2. At this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the Al0.15Ga0.85N layer 2. Since the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrate 1 is exposed).

14. 发明授权

US06423984B1 Light-emitting semiconductor device using gallium nitride compound semiconductor 有权
标题翻译：使用氮化镓化合物半导体的发光半导体装置
公开(公告)号：US06423984B1
公开(公告)日：2002-07-23
申请号：US09394527
申请日：1999-09-10
申请人： Hisaki Kato , Hiroshi Watanabe , Norikatsu Koide , Shinya Asami
发明人： Hisaki Kato , Hiroshi Watanabe , Norikatsu Koide , Shinya Asami
IPC分类号： H01L2978
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： A barrier layer made of AlxGa1−xN (0
摘要翻译：在使用具有多量子阱（MQW）结构的氮化镓化合物的发光半导体器件中形成由Al x Ga 1-x N（0

15. 发明授权

US06410939B1 Semiconductor light-emitting device and method of manufacturing the same 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US06410939B1
公开(公告)日：2002-06-25
申请号：US09976390
申请日：2001-10-12
申请人： Norikatsu Koide , Yoshiyuki Takahira
发明人： Norikatsu Koide , Yoshiyuki Takahira
IPC分类号： H01L2715
CPC分类号： H01L33/32 , H01L33/007
摘要： The present invention provides a semiconductor light-emitting device including a Si substrate, a first clad layer, and an intermediate layer of n-AlInN between the substrate and the first clad layer. The intermediate layer is formed of AlxGayInzN, wherein x+y+z=1, 0≦y≦0.5, and 5/95≦z/x≦40/60. Thus on the Si substrate there can be provided a nitride-based, light emitting semiconductor device of high quality capable of electrical conduction from the Si substrate.
摘要翻译：本发明提供一种半导体发光器件，其包括在衬底和第一覆盖层之间的Si衬底，第一覆盖层和n-AlInN的中间层。中间层由AlxGayInzN形成，其中x + y + z = 1,0

16. 发明授权

US06326236B1 Semiconductor light-emitting device and manufacturing method thereof 有权
公开(公告)号：US06326236B1
公开(公告)日：2001-12-04
申请号：US09497814
申请日：2000-02-03
申请人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
发明人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
IPC分类号： H01L2144
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/155 , H01L33/06 , Y10S438/933
摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

17. 发明授权

US5862167A Light-emitting semiconductor device using gallium nitride compound 失效
标题翻译：使用氮化镓化合物的发光半导体器件
公开(公告)号：US5862167A
公开(公告)日：1999-01-19
申请号：US863397
申请日：1997-05-27
申请人： Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Junichi Umezaki , Naoki Shibata , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano
发明人： Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Junichi Umezaki , Naoki Shibata , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01L33/10 , H01L33/12 , H01L33/32 , H01L33/40 , H01L33/42 , H01L33/46 , H01S5/183 , H01S5/323 , H01S3/19
CPC分类号： H01L33/105 , H01L33/32 , H01S5/18375 , H01L33/405 , H01L33/465 , H01S5/0207 , H01S5/0213 , H01S5/32341
摘要： A light-emitting diode or laser diode is provided which uses a Group III nitride compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1, and 0.ltoreq.y.ltoreq.1. A double hetero-junction structure is provided which sandwiches an active layer between layers having wider band gaps than the active layer. The diode has a multi-layer structure which has either a reflecting layer to reflect emission light or a reflection inhibiting layer. The emission light of the diode exits the diode in a direction perpendicular to the double hetero-junction structure. Light emitted in a direction opposite to the light outlet is reflected by the reflecting film toward the direction of the light outlet. Further, the reflection inhibiting film, disposed at or near the light outlet, helps the release of exiting light by minimizing or preventing reflection. As a result, light can be efficiently emitted by the light-generating diode.
摘要翻译：提供一种发光二极管或激光二极管，其使用满足式（Al x Ga 1-x）y In 1-y N的III族氮化物化合物半导体，包括0≤x≤1，0≤y< = 1。提供了一种双异质结结构，其在活性层之间具有更宽带隙的层之间夹持有源层。二极管具有多层结构，其具有反射发射光的反射层或反射抑制层。二极管的发射光在垂直于双异质结结构的方向上离开二极管。在与光出口相反的方向上发射的光被反射膜反射到光出口的方向。此外，设置在光出口处或附近的反射抑制膜通过最小化或防止反射来帮助释放出射光。结果，光可以被发光二极管有效地发射。

18. 发明授权

US07619261B2 Method for manufacturing gallium nitride compound semiconductor 失效
标题翻译：氮化镓化合物半导体的制造方法
公开(公告)号：US07619261B2
公开(公告)日：2009-11-17
申请号：US11640961
申请日：2006-12-19
申请人： Norikatsu Koide
发明人： Norikatsu Koide
IPC分类号： H01L33/00
CPC分类号： H01L21/0262 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L33/007
摘要： An Al0.15Ga0.85N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2. At this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the Al0.15Ga0.85N layer 2. Since the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrate 1 is exposed).
摘要翻译：在硅衬底1上以条纹或栅格图案形成Al0.15Ga0.85N层2。在衬底1被暴露的区域A中和在层2上方定义的区域B中形成GaN层3.此时，GaN层以外延和三维生长（不仅在垂直方向上而且在横向方向）。由于GaN层在横向上外延生长，所以在横向生长区域（区域A中获得具有大大减少的位错数量的GaN化合物半导体） 1暴露）。

19. 发明授权

US07176497B2 Group III nitride compound semiconductor 失效
标题翻译： III族氮化物化合物半导体
公开(公告)号：US07176497B2
公开(公告)日：2007-02-13
申请号：US11172918
申请日：2005-07-05
申请人： Norikatsu Koide
发明人： Norikatsu Koide
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L21/0254 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007
摘要： An Al0.15Ga0.85N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2. At this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the Al0.15Ga0.85N layer 2. Since the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrate 1 is exposed).
摘要翻译：在硅衬底1上以条纹或栅格图案形成Al 0.15 N Ga 0.85 N层2。在衬底1暴露的区域A和限定在层2上方的区域B中形成GaN层3。此时，GaN层在Al 0.15 N 0.85 N N 2层2上外延生长三维（不仅在垂直方向，而且在横向方向上）。由于GaN层在横向上外延生长，所以在横向生长区域（基板1露出的区域A）中获得具有大大减少的位错数量的GaN化合物半导体。

20. 发明授权

US06830992B1 Method for manufacturing a gallium nitride group compound semiconductor 失效
标题翻译：氮化镓基化合物半导体的制造方法
公开(公告)号：US06830992B1
公开(公告)日：2004-12-14
申请号：US09677781
申请日：2000-10-02
申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
发明人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
IPC分类号： H01L2120
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025
摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
摘要翻译：这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法，通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

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