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11. 发明申请

US20110059613A1 MASK PATTERN FOR SEMICONDUCTOR DEVICE FABRICATION, METHOD OF FORMING THE SAME, AND METHOD OF FABRICATING FINELY PATTERNED SEMICONDUCTOR DEVICE 失效
标题翻译：用于半导体器件制造的掩模图案，其形成方法以及制造精细图案半导体器件的方法
公开(公告)号：US20110059613A1
公开(公告)日：2011-03-10
申请号：US12946964
申请日：2010-11-16
申请人： Jung-Hwan Hah , Jin Hong , Hyun-Woo Kim , Hata Mitsuhiro , Kolake Mayya Subramanya , Sang-Gyun Woo
发明人： Jung-Hwan Hah , Jin Hong , Hyun-Woo Kim , Hata Mitsuhiro , Kolake Mayya Subramanya , Sang-Gyun Woo
IPC分类号： H01L21/31 , H01L21/20
CPC分类号： G03F7/40 , B82Y30/00 , G03F7/0752 , G03F7/165 , H01L21/0274
摘要： Provided are a mask pattern including a silicon-containing self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on the resist pattern. The self-assembled molecular layer has a silica network formed by a sol-gel reaction. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed only on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched by using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.
摘要翻译：提供了包括含硅自组装分子层的掩模图案，其形成方法和制造半导体器件的方法。掩模图案包括形成在半导体衬底上的抗蚀剂图案和形成在抗蚀剂图案上的自组装分子层。自组装分子层具有通过溶胶 - 凝胶反应形成的二氧化硅网络。为了形成掩模图案，首先，在覆盖基板的下层上形成抗蚀剂图案，使底层暴露于第一宽度。然后，仅在抗蚀剂图案的表面上选择性地形成自组装分子层，以使底层暴露于小于第一宽度的第二宽度。通过使用抗蚀剂图案和自组装分子层作为蚀刻掩模来蚀刻底层以获得精细图案。

12. 发明授权

US07851125B2 Mask pattern for semiconductor device fabrication, method of forming the same, and method of fabricating finely patterned semiconductor device 失效
标题翻译：用于半导体器件制造的掩模图案，其形成方法以及制造精细图案化的半导体器件的方法
公开(公告)号：US07851125B2
公开(公告)日：2010-12-14
申请号：US11186913
申请日：2005-07-21
申请人： Jung-Hwan Hah , Jin Hong , Hyun-Woo Kim , Hata Mitsuhiro , Kolake Mayya Subramanya , Sang-Gyun Woo
发明人： Jung-Hwan Hah , Jin Hong , Hyun-Woo Kim , Hata Mitsuhiro , Kolake Mayya Subramanya , Sang-Gyun Woo
IPC分类号： G03F7/40 , G03F7/36 , G03F7/20 , G03F7/30 , G03F7/039
CPC分类号： G03F7/40 , B82Y30/00 , G03F7/0752 , G03F7/165 , H01L21/0274
摘要： Provided are a mask pattern including a silicon-containing self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on the resist pattern. The self-assembled molecular layer has a silica network formed by a sol-gel reaction. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed only on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched by using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.
摘要翻译：提供了包括含硅自组装分子层的掩模图案，其形成方法和制造半导体器件的方法。掩模图案包括形成在半导体衬底上的抗蚀剂图案和形成在抗蚀剂图案上的自组装分子层。自组装分子层具有通过溶胶 - 凝胶反应形成的二氧化硅网络。为了形成掩模图案，首先，在覆盖基板的下层上形成抗蚀剂图案，使底层暴露于第一宽度。然后，仅在抗蚀剂图案的表面上选择性地形成自组装分子层，以使底层暴露于小于第一宽度的第二宽度。通过使用抗蚀剂图案和自组装分子层作为蚀刻掩模来蚀刻底层以获得精细图案。

13. 发明申请

US20060115772A1 Polymeric tetrahedral carbon films, methods of forming the same and methods of forming fine patterns using the same 审中-公开
标题翻译：聚合四面体碳膜，其形成方法和使用其形成精细图案的方法
公开(公告)号：US20060115772A1
公开(公告)日：2006-06-01
申请号：US11282368
申请日：2005-11-18
申请人： Jung-Hwan Hah , Yool Kang , Man-Hyoung Ryoo , Shi-Yong Yi , Sang-Gyun Woo
发明人： Jung-Hwan Hah , Yool Kang , Man-Hyoung Ryoo , Shi-Yong Yi , Sang-Gyun Woo
IPC分类号： G03C5/00
CPC分类号： G03F7/091 , C08G61/02
摘要： The present invention provides polymeric films including polymers having an sp3 carbon main frame including a tetrahedral center atom. Methods of forming the same, hard marks including the same and methods of forming fine patterns using the same are also provided.
摘要翻译：本发明提供了聚合物膜，其包括具有包含四面体中心原子的sp 3 O 3碳主框的聚合物。还提供了形成它们的方法，包括其的硬标记和使用其形成精细图案的方法。

14. 发明授权

US07335455B2 Method of forming an underlayer of a bi-layer resist film and method of fabricating a semiconductor device using the same 有权
标题翻译：形成双层抗蚀剂膜的底层的方法和使用其制造半导体器件的方法
公开(公告)号：US07335455B2
公开(公告)日：2008-02-26
申请号：US10787368
申请日：2004-02-26
申请人： Hyun-Woo Kim , Jin Hong , Myoung-Ho Jung , Sang-Gyun Woo
发明人： Hyun-Woo Kim , Jin Hong , Myoung-Ho Jung , Sang-Gyun Woo
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/095 , G03F7/091
摘要： A method of forming an underlayer of a bi-layer resist including forming a blended material by blending a polymer having an aromatic group and a methacrylate polymer, and coating a substrate with the blended material. The blended material coated on the substrate is irradiated to form an underlayer. The polymer having the aromatic group may be a novolac polymer or a naphthalene polymer.
摘要翻译：一种形成双层抗蚀剂的底层的方法，包括通过混合具有芳族基团的聚合物和甲基丙烯酸酯聚合物形成共混材料，并用共混材料涂覆基材。涂布在基材上的混合材料被照射以形成底层。具有芳基的聚合物可以是酚醛清漆聚合物或萘聚合物。

15. 发明申请

US20050233922A1 Cleaning solution and method of cleaning semiconductor devices using the same 审中-公开
标题翻译：清洗液及使用其的半导体器件的清洗方法
公开(公告)号：US20050233922A1
公开(公告)日：2005-10-20
申请号：US11048069
申请日：2005-02-02
申请人： Myoung-Ho Jung , Hyun-Woo Kim , Sang-Gyun Woo , Jin-Bae Jeong , Hyun-Jin Jeong , Jae-Woong Moon
发明人： Myoung-Ho Jung , Hyun-Woo Kim , Sang-Gyun Woo , Jin-Bae Jeong , Hyun-Jin Jeong , Jae-Woong Moon
IPC分类号： G03F7/32 , C11D1/00 , C11D1/28 , C11D1/72 , C11D3/04 , C11D3/20 , C11D3/43 , C11D11/00 , C11D17/08 , G03F7/40 , H01L21/027 , H01L21/304
CPC分类号： G03F7/32 , C11D1/28 , C11D1/72 , C11D3/2006 , C11D3/201 , C11D3/2017 , C11D3/202 , C11D11/0047 , G03F7/322 , G03F7/40 , H01L21/0273
摘要： A cleaning solution for preventing the collapse of photoresist patterns and a method of cleaning a semiconductor device using the cleaning solution; the cleaning solution includes a solvent and a surfactant and has a dynamic surface tension of about 50 dyne/cm or less at about 6 bubbles/seconds when measured by a maximum bubble pressure method. The collapse of the photoresist pattern can be prevented using the cleaning solution when forming minute photoresist patterns having about 100 nm or less pattern width. The cleaning solution containing a surfactant in a high concentration also can be prepared to reduce distribution expenses.
摘要翻译：一种用于防止光致抗蚀剂图案塌陷的清洁溶液和使用该清洁溶液清洁半导体器件的方法; 清洗溶液包括溶剂和表面活性剂，并且当通过最大气泡压力法测量时，以约6个气泡/秒的速度具有约50达因/厘米或更小的动态表面张力。当形成具有约100nm或更少图案宽度的微小光致抗蚀剂图案时，可以使用清洁溶液防止光致抗蚀剂图案的崩溃。含有高浓度表面活性剂的清洗液也可以制备，以减少分配费用。

16. 发明授权

US06962768B2 Ether monomers and polymers having multi-ring structures, and photosensitive polymers and resist compositions obtained from the same 失效
标题翻译：具有多环结构的醚单体和聚合物，以及由其获得的光敏聚合物和抗蚀剂组合物
公开(公告)号：US06962768B2
公开(公告)日：2005-11-08
申请号：US10799025
申请日：2004-03-12
申请人： Hyun-Woo Kim , Sang-Gyun Woo
发明人： Hyun-Woo Kim , Sang-Gyun Woo
IPC分类号： G03F7/039 , C08F16/18 , C08F20/22 , C08F220/22 , C08F234/02 , G03F7/004 , G03F7/027 , C07D311/78 , C08F34/02
CPC分类号： G03F7/0046 , C07D311/78 , C08F34/02 , G03F7/0395 , Y10S430/106 , Y10S430/108 , Y10S430/115
摘要： Provided are a variety of monomers suitable of producing photosensitive polymers, that are in turn, useful in photoresist compositions, through radical (cationic) polymerization including at least one multi-ring alkenyl ethers and one α-fluorinated acrylate. The resulting photoresist compositions exhibit both acceptable resistance to dry etching processing and light transmittance suitable for use with various light sources such as KrF excimer lasers, ArF excimer lasers or F2 excimer lasers, in a photolithography process to produce fine photoresist patterns. In addition to the multi-ring alkenyl ethers and α-fluorinated acrylates, additional monomers comprising one or more cyclic aliphatic and heterocyclic compounds, both unsubstituted and substituted, in particular dihydropyrans, may be incorporated into the photosensitive polymers. Photosensitive polymers can then be produced by combining these various monomer units to form copolymers, terpolymers and higher order polymers, an exemplary embodiment of which may be generally represented by the formula V:
摘要翻译：提供适合于通过包括至少一个多环烯基醚和一个α-氟化丙烯酸酯的自由基（阳离子）聚合生产光敏聚合物的各种单体，其又可用于光致抗蚀剂组合物。所得光致抗蚀剂组合物在光刻工艺中表现出可接受的干蚀刻处理耐受性和适用于各种光源（例如KrF准分子激光器，ArF准分子激光器或F 2/2准分子激光器）的光透射率，以产生精细的光刻胶图案。除了多环烯基醚和α-氟化丙烯酸酯之外，还可以将包含一种或多种环状脂族和杂环化合物，未取代的和取代的，特别是二氢吡喃的附加单体引入光敏聚合物中。然后可以通过组合这些各种单体单元以形成共聚物，三元共聚物和更高级的聚合物来生产光敏聚合物，其典型的实施方案通常可以由式V表示：

17. 发明授权

US06713228B2 Ether monomers and polymers having multi-ring structures, and photosensitive polymers and resist compositions obtained from the same 失效
标题翻译：具有多环结构的醚单体和聚合物，以及由其获得的光敏聚合物和抗蚀剂组合物
公开(公告)号：US06713228B2
公开(公告)日：2004-03-30
申请号：US10132804
申请日：2002-04-24
申请人： Hyun-Woo Kim , Sang-Gyun Woo , Sung-Ho Lee
发明人： Hyun-Woo Kim , Sang-Gyun Woo , Sung-Ho Lee
IPC分类号： G03F7039
CPC分类号： C08F34/02 , C07D311/78 , G03F7/0046 , G03F7/0395 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： Provided are alkenyl ether-based monomers having multi-ring structure, and photosensitive polymers and resist compositions obtained from the same. The photosensitive polymer includes a monomer unit represented by the following formula: wherein R4 and R5 are independently -H or -CH3, and R4 are independently -H, -OH or a alkyl group having 1-20 carbon atoms.
摘要翻译：提供具有多环结构的烯基醚类单体，以及由其获得的感光性聚合物和抗蚀剂组合物。光敏聚合物包括由下式表示的单体单元：其中R4和R5独立地是-H或-CH3，R4独立地是-H，-OH或具有1-20个碳原子的烷基。

18. 发明申请

US20060127816A1 Double photolithography methods with reduced intermixing of solvents 审中-公开
标题翻译：双光刻法减少了溶剂的混合
公开(公告)号：US20060127816A1
公开(公告)日：2006-06-15
申请号：US11296816
申请日：2005-12-07
申请人： Yool Kang , Han-ku Cho , Sang-Gyun Woo , Suk-Joo Lee , Man-Hyung Ryoo , Mitsuhiro Hata , Hyung-Rae Lee
发明人： Yool Kang , Han-ku Cho , Sang-Gyun Woo , Suk-Joo Lee , Man-Hyung Ryoo , Mitsuhiro Hata , Hyung-Rae Lee
IPC分类号： G03F7/00
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273
摘要： The present invention provides a double photolithography method in which, after a first photoresist pattern including a crosslinkable agent is formed on a semiconductor substrate, a crosslinkage is formed in a molecular structure of the first photoresist pattern. A second photoresist film may be formed on a surface of the semiconductor substrate on which the crosslinked first photoresist patterns are formed. Second photoresist patterns may be formed by exposing, post-exposure baking, and developing the second photoresist film.
摘要翻译：本发明提供一种双光刻方法，其中在半导体衬底上形成包括可交联剂的第一光致抗蚀剂图案之后，在第一光致抗蚀剂图案的分子结构中形成交联。可以在其上形成有交联的第一光致抗蚀剂图案的半导体衬底的表面上形成第二光致抗蚀剂膜。可以通过曝光，曝光后烘烤和显影第二光致抗蚀剂膜来形成第二光致抗蚀剂图案。

19. 发明申请

US20070155925A1 Polymer, top coating layer, top coating composition and immersion lithography process using the same 有权
标题翻译：聚合物，顶涂层，顶涂层组合物和使用其的浸渍光刻工艺
公开(公告)号：US20070155925A1
公开(公告)日：2007-07-05
申请号：US11585082
申请日：2006-10-24
申请人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
IPC分类号： C08F222/14
CPC分类号： C08F222/06 , C08F8/12 , C08F8/14 , C08F216/08 , C08F216/165 , C08F230/08 , C08F2800/20 , C08F2810/50 , C08F216/18 , C08F216/20 , C08F210/14
摘要： A polymer, a top coating layer, a top coating composition and an immersion lithography process using the same are disclosed. The top coating layer polymer may include a deuterated carboxyl group having a desired acidity such that the top coating layer polymer may be insoluble with water and a photoresist, and soluble in a developer. The polymer may be included in a top coating layer and a top coating composition.
摘要翻译：公开了一种聚合物，顶涂层，顶涂层组合物和使用其的浸没光刻工艺。顶部涂层聚合物可以包括具有所需酸度的氘代羧基，使得顶部涂层聚合物可能与水和光致抗蚀剂不溶，并且可溶于显影剂。聚合物可以包括在顶部涂层和顶部涂层组合物中。

20. 发明授权

US07642042B2 Polymer, top coating layer, top coating composition and immersion lithography process using the same 有权
标题翻译：聚合物，顶涂层，顶涂层组合物和使用其的浸渍光刻工艺
公开(公告)号：US07642042B2
公开(公告)日：2010-01-05
申请号：US11585082
申请日：2006-10-24
申请人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
IPC分类号： G03F7/11 , G03F7/30
CPC分类号： C08F222/06 , C08F8/12 , C08F8/14 , C08F216/08 , C08F216/165 , C08F230/08 , C08F2800/20 , C08F2810/50 , C08F216/18 , C08F216/20 , C08F210/14
摘要： A polymer, a top coating layer, a top coating composition and an immersion lithography process using the same are disclosed. The top coating layer polymer may include a deuterated carboxyl group having a desired acidity such that the top coating layer polymer may be insoluble with water and a photoresist, and soluble in a developer. The polymer may be included in a top coating layer and a top coating composition.
摘要翻译：公开了一种聚合物，顶涂层，顶涂层组合物和使用其的浸没光刻工艺。顶部涂层聚合物可以包括具有所需酸度的氘代羧基，使得顶部涂层聚合物可能与水和光致抗蚀剂不溶，并且可溶于显影剂。聚合物可以包括在顶部涂层和顶部涂层组合物中。

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