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1. 发明申请

US20060127816A1 Double photolithography methods with reduced intermixing of solvents 审中-公开
标题翻译：双光刻法减少了溶剂的混合
公开(公告)号：US20060127816A1
公开(公告)日：2006-06-15
申请号：US11296816
申请日：2005-12-07
申请人： Yool Kang , Han-ku Cho , Sang-Gyun Woo , Suk-Joo Lee , Man-Hyung Ryoo , Mitsuhiro Hata , Hyung-Rae Lee
发明人： Yool Kang , Han-ku Cho , Sang-Gyun Woo , Suk-Joo Lee , Man-Hyung Ryoo , Mitsuhiro Hata , Hyung-Rae Lee
IPC分类号： G03F7/00
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273
摘要： The present invention provides a double photolithography method in which, after a first photoresist pattern including a crosslinkable agent is formed on a semiconductor substrate, a crosslinkage is formed in a molecular structure of the first photoresist pattern. A second photoresist film may be formed on a surface of the semiconductor substrate on which the crosslinked first photoresist patterns are formed. Second photoresist patterns may be formed by exposing, post-exposure baking, and developing the second photoresist film.
摘要翻译：本发明提供一种双光刻方法，其中在半导体衬底上形成包括可交联剂的第一光致抗蚀剂图案之后，在第一光致抗蚀剂图案的分子结构中形成交联。可以在其上形成有交联的第一光致抗蚀剂图案的半导体衬底的表面上形成第二光致抗蚀剂膜。可以通过曝光，曝光后烘烤和显影第二光致抗蚀剂膜来形成第二光致抗蚀剂图案。

2. 发明申请

US20060160028A1 Method of forming fine patterns of a semiconductor device 审中-公开
标题翻译：形成半导体器件精细图案的方法
公开(公告)号：US20060160028A1
公开(公告)日：2006-07-20
申请号：US11328404
申请日：2006-01-09
申请人： Hyung-Rae Lee , Yool Kang , Sang-Gyun Woo , Man-Hyoung Ryoo , Suk-Joo Jee
发明人： Hyung-Rae Lee , Yool Kang , Sang-Gyun Woo , Man-Hyoung Ryoo , Suk-Joo Jee
IPC分类号： G03F7/00
CPC分类号： G03F7/0035 , G03F7/0045
摘要： Methods of forming fine patterns of a semiconductor device include forming a positive first photoresist layer on a semiconductor substrate, including initiating an exposure reaction at a first dose. The first photoresist layer is exposed and developed to form first photoresist patterns. A second photoresist layer is formed on a region of the semiconductor substrate including the first photoresist patterns, including terminating an exposure reaction at a second dose no greater than the first dose. The second photoresist layer is exposed and developed to form second photoresist patterns between the first photoresist patterns. Methods of forming fine patterns having a negative first photoresist layer are also provided.
摘要翻译：形成半导体器件的精细图案的方法包括在半导体衬底上形成正的第一光致抗蚀剂层，包括以第一剂量引发曝光反应。第一光致抗蚀剂层被曝光和显影以形成第一光致抗蚀剂图案。在包括第一光致抗蚀剂图案的半导体衬底的区域上形成第二光致抗蚀剂层，包括以不大于第一剂量的第二剂量终止曝光反应。第二光致抗蚀剂层被曝光和显影以在第一光致抗蚀剂图案之间形成第二光致抗蚀剂图案。还提供了形成具有负的第一光致抗蚀剂层的精细图案的方法。

3. 发明申请

US20060115747A1 Photo mask structure used during twice-performed photo process and methods of using the same 审中-公开
标题翻译：在两次照相过程中使用的光掩模结构及其使用方法
公开(公告)号：US20060115747A1
公开(公告)日：2006-06-01
申请号：US11281466
申请日：2005-11-18
申请人： Hyung-Rae Lee , Jin-Young Yoon , Sang-Gyun Woo , Man-Hyoung Ryoo , Min-Jeong Oh
发明人： Hyung-Rae Lee , Jin-Young Yoon , Sang-Gyun Woo , Man-Hyoung Ryoo , Min-Jeong Oh
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/70
摘要： A photo mask structure used during a twice-performed photo process and methods of using the same. The photo mask structure may include first mask patterns that correspond to first photoresist patterns during a first photo process performed on a first photoresist layer and second mask patterns that correspond to second photoresist patterns during a second photo process performed on a second photoresist layer. A method of using a photo mask structure may include performing a first photo process on a first photoresist layer using first mask patterns of the photo mask structure to form first photoresist patterns on a semiconductor substrate, and performing a second photo process on a second photoresist layer using second mask patterns of the photo mask structure to form second photoresist patterns on a semiconductor substrate, wherein the second photoresist patterns are interposed between the first photoresist patterns and overlap the first photoresist patterns.
摘要翻译：在两次照相处理过程中使用的光掩模结构及其使用方法。光掩模结构可以包括在对第一光致抗蚀剂层执行的第一光刻工艺期间对应于第一光致抗蚀剂图案的第一掩模图案和在对第二光致抗蚀剂层执行的第二光刻工艺期间对应于第二光致抗蚀剂图案的第二掩模图案。使用光掩模结构的方法可以包括使用光掩模结构的第一掩模图案在第一光致抗蚀剂层上进行第一光刻工艺以在半导体衬底上形成第一光致抗蚀剂图案，并且在第二光刻胶层上进行第二光刻工艺使用所述光掩模结构的第二掩模图案在半导体衬底上形成第二光致抗蚀剂图案，其中所述第二光致抗蚀剂图案插入在所述第一光致抗蚀剂图案之间并与所述第一光致抗蚀剂图案重叠。

4. 发明申请

US20130040448A1 METHODS OF FORMING METAL OR METAL NITRIDE PATTERNS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 审中-公开
标题翻译：形成金属或金属氮化物图案的方法和制造半导体器件的方法
公开(公告)号：US20130040448A1
公开(公告)日：2013-02-14
申请号：US13570812
申请日：2012-08-09
申请人： Joo-Hyung Yang , Yool Kang , Hyung-Rae Lee , Kyu-Sik Shin , Jae-ho Kim , Dong-Jun Lee
发明人： Joo-Hyung Yang , Yool Kang , Hyung-Rae Lee , Kyu-Sik Shin , Jae-ho Kim , Dong-Jun Lee
IPC分类号： H01L21/312 , H01L21/336
CPC分类号： H01L21/28123 , H01L21/0273 , H01L21/32139 , H01L21/76838
摘要： In a method of forming a metal or metal nitride pattern, a metal or metal nitride layer is formed on a substrate, and a photoresist pattern is formed on the metal or metal nitride layer. An over-coating composition is coated on the metal or metal nitride layer and on the photoresist pattern to form a capping layer on the photoresist pattern. The over-coating composition includes a polymer having amine groups as a side chain or a branch and a solvent. A remaining portion of the over-coating composition is removed by washing with a hydrophilic solution. The metal or metal nitride layer is partially removed using the capping layer and the photoresist pattern as an etching mask.
摘要翻译：在形成金属或金属氮化物图形的方法中，在基板上形成金属或金属氮化物层，并且在金属或金属氮化物层上形成光刻胶图案。在金属或金属氮化物层和光致抗蚀剂图案上涂覆过涂层组合物以在光致抗蚀剂图案上形成覆盖层。该覆盖组合物包括具有侧基或分支和溶剂的胺基的聚合物。通过用亲水溶液洗涤除去剩余部分的外涂层组合物。使用覆盖层和光致抗蚀剂图案作为蚀刻掩模来部分去除金属或金属氮化物层。

5. 发明授权

US08350235B2 Semiconductor intra-field dose correction 有权
标题翻译：半导体场内剂量校正
公开(公告)号：US08350235B2
公开(公告)日：2013-01-08
申请号：US12509821
申请日：2009-07-27
申请人： Hyung-Rae Lee , Dong Hee Yu , Sohan Singh Mehta , Niall Shepherd , Daniel A Corliss
发明人： Hyung-Rae Lee , Dong Hee Yu , Sohan Singh Mehta , Niall Shepherd , Daniel A Corliss
IPC分类号： G21K5/10
CPC分类号： G03F7/70425 , G03F7/70066 , G03F7/70558 , G03F7/70625
摘要： A system and method are provided for automatic dose-correction recipe generation, the system including a dose-correction recipe generator, a reticle data unit in signal communication with the recipe generator, a slit data unit in signal communication with the recipe generator, a process data unit in signal communication with the recipe generator, a wafer data unit in signal communication with the recipe generator, a control unit in signal communication with the recipe generator, and an output unit or a storage unit in signal communication with the control unit; and the method including receiving a current reticle data set and a previous reticle data set, receiving a current slit data set and a previous slit data set, receiving a process condition, receiving a wafer condition, automatically generating a dose-correction recipe in accordance with the received reticle, slit, process and wafer information, and controlling a dose in accordance with the generated recipe.
摘要翻译：提供了一种用于自动剂量校正配方生成的系统和方法，该系统包括剂量校正配方生成器，与配方生成器进行信号通信的掩模版数据单元，与配方生成器进行信号通信的缝隙数据单元，与配方生成器进行信号通信的数据单元，与配方生成器进行信号通信的晶片数据单元，与配方生成器进行信号通信的控制单元，以及与控制单元进行信号通信的输出单元或存储单元; 并且所述方法包括接收目前的掩模版数据集和先前的掩模版数据集，接收当前狭缝数据集和先前的狭缝数据组，接收处理条件，接收晶片条件，根据以下步骤自动生成剂量校正配方接收到的掩模版，狭缝，处理和晶片信息，以及根据生成的食谱控制剂量。

6. 发明授权

US08219938B2 Semiconductor inter-field dose correction 有权
标题翻译：半导体场间剂量校正
公开(公告)号：US08219938B2
公开(公告)日：2012-07-10
申请号：US12580347
申请日：2009-10-16
申请人： Hyung-Rae Lee , Dong hee Yu , Len Y. Tsou , Haoren Zhuang
发明人： Hyung-Rae Lee , Dong hee Yu , Len Y. Tsou , Haoren Zhuang
IPC分类号： G06F17/50
CPC分类号： G03F1/00 , G03F7/70558
摘要： A method and apparatus are provided for adapting a semiconductor inter-field dose correction map from a first photolithography mask to a second photolithography mask using the same manufacturing stack and reactive ion etching processes, the method including: obtaining a first dose correction map for the first photolithography mask as a function of first chip or die identities; determining a first transformation matrix from the first chip or die identities of the first photolithography mask into an orthogonal coordinate system; determining a second transformation matrix from second chip or die identities of the second photolithography mask into the orthogonal coordinate system; and transforming the first dose correction map for the first photolithography mask into a second dose correction map for the second photolithography mask in correspondence with each of the first and second transformation matrices.
摘要翻译：提供了一种方法和装置，用于使用相同的制造堆叠和反应离子蚀刻工艺，将半导体场间剂量校正图从第一光刻掩模适配到第二光刻掩模，该方法包括：获得第一光刻掩模的第一剂量校正图光刻掩模作为第一芯片或芯片标识的函数; 将第一光刻掩模的第一芯片或裸片标识的第一变换矩阵确定为正交坐标系; 确定从所述第二光刻掩模的第二芯片或裸片标识到所述正交坐标系的第二变换矩阵; 以及将第一光刻掩模的第一剂量校正图转换成与第一和第二变换矩阵中的每一个对应的第二光刻掩模的第二剂量校正图。

7. 发明申请

US20110093823A1 SEMICONDUCTOR INTER-FIELD DOSE CORRECTION 有权
标题翻译：半导体场效应校正
公开(公告)号：US20110093823A1
公开(公告)日：2011-04-21
申请号：US12580347
申请日：2009-10-16
申请人： Hyung-Rae Lee , Dong Hee Yu , Len Y. Tsou , Haoren Zhuang
发明人： Hyung-Rae Lee , Dong Hee Yu , Len Y. Tsou , Haoren Zhuang
IPC分类号： G06F17/50
CPC分类号： G03F1/00 , G03F7/70558
摘要： A method and apparatus are provided for adapting a semiconductor inter-field dose correction map from a first photolithography mask to a second photolithography mask using the same manufacturing stack and reactive ion etching processes, the method including: obtaining a first dose correction map for the first photolithography mask as a function of first chip or die identities; determining a first transformation matrix from the first chip or die identities of the first photolithography mask into an orthogonal coordinate system; determining a second transformation matrix from second chip or die identities of the second photolithography mask into the orthogonal coordinate system; and transforming the first dose correction map for the first photolithography mask into a second dose correction map for the second photolithography mask in correspondence with each of the first and second transformation matrices.
摘要翻译：提供了一种方法和装置，用于使用相同的制造堆叠和反应离子蚀刻工艺，将半导体场间剂量校正图从第一光刻掩模适配到第二光刻掩模，该方法包括：获得第一光刻掩模的第一剂量校正图光刻掩模作为第一芯片或芯片标识的函数; 将第一光刻掩模的第一芯片或裸片标识的第一变换矩阵确定为正交坐标系; 确定从所述第二光刻掩模的第二芯片或裸片标识到所述正交坐标系的第二变换矩阵; 以及将第一光刻掩模的第一剂量校正图转换成与第一和第二变换矩阵中的每一个对应的第二光刻掩模的第二剂量校正图。

8. 发明申请

US20110017926A1 SEMICONDUCTOR INTRA-FIELD DOSE CORRECTION 有权
标题翻译：半导体场内剂量校正
公开(公告)号：US20110017926A1
公开(公告)日：2011-01-27
申请号：US12509821
申请日：2009-07-27
申请人： Hyung-Rae Lee , Dong Hee Yu , Sohan Singh Mehta , Niall Shepherd , Daniel A. Corliss
发明人： Hyung-Rae Lee , Dong Hee Yu , Sohan Singh Mehta , Niall Shepherd , Daniel A. Corliss
IPC分类号： G21K5/10
CPC分类号： G03F7/70425 , G03F7/70066 , G03F7/70558 , G03F7/70625
摘要： A system and method are provided for automatic dose-correction recipe generation, the system including a dose-correction recipe generator, a reticle data unit in signal communication with the recipe generator, a slit data unit in signal communication with the recipe generator, a process data unit in signal communication with the recipe generator, a wafer data unit in signal communication with the recipe generator, a control unit in signal communication with the recipe generator, and an output unit or a storage unit in signal communication with the control unit; and the method including receiving a current reticle data set and a previous reticle data set, receiving a current slit data set and a previous slit data set, receiving a process condition, receiving a wafer condition, automatically generating a dose-correction recipe in accordance with the received reticle, slit, process and wafer information, and controlling a dose in accordance with the generated recipe.
摘要翻译：提供了一种用于自动剂量校正配方生成的系统和方法，该系统包括剂量校正配方生成器，与配方生成器进行信号通信的掩模版数据单元，与配方生成器进行信号通信的缝隙数据单元，与配方生成器进行信号通信的数据单元，与配方生成器进行信号通信的晶片数据单元，与配方生成器进行信号通信的控制单元，以及与控制单元进行信号通信的输出单元或存储单元; 并且所述方法包括接收目前的掩模版数据集和先前的掩模版数据集，接收当前狭缝数据集和先前的狭缝数据组，接收处理条件，接收晶片条件，根据以下步骤自动生成剂量校正配方接收到的掩模版，狭缝，处理和晶片信息，以及根据生成的食谱控制剂量。

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