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1. 发明申请

US20050233922A1 Cleaning solution and method of cleaning semiconductor devices using the same 审中-公开
标题翻译：清洗液及使用其的半导体器件的清洗方法
公开(公告)号：US20050233922A1
公开(公告)日：2005-10-20
申请号：US11048069
申请日：2005-02-02
申请人： Myoung-Ho Jung , Hyun-Woo Kim , Sang-Gyun Woo , Jin-Bae Jeong , Hyun-Jin Jeong , Jae-Woong Moon
发明人： Myoung-Ho Jung , Hyun-Woo Kim , Sang-Gyun Woo , Jin-Bae Jeong , Hyun-Jin Jeong , Jae-Woong Moon
IPC分类号： G03F7/32 , C11D1/00 , C11D1/28 , C11D1/72 , C11D3/04 , C11D3/20 , C11D3/43 , C11D11/00 , C11D17/08 , G03F7/40 , H01L21/027 , H01L21/304
CPC分类号： G03F7/32 , C11D1/28 , C11D1/72 , C11D3/2006 , C11D3/201 , C11D3/2017 , C11D3/202 , C11D11/0047 , G03F7/322 , G03F7/40 , H01L21/0273
摘要： A cleaning solution for preventing the collapse of photoresist patterns and a method of cleaning a semiconductor device using the cleaning solution; the cleaning solution includes a solvent and a surfactant and has a dynamic surface tension of about 50 dyne/cm or less at about 6 bubbles/seconds when measured by a maximum bubble pressure method. The collapse of the photoresist pattern can be prevented using the cleaning solution when forming minute photoresist patterns having about 100 nm or less pattern width. The cleaning solution containing a surfactant in a high concentration also can be prepared to reduce distribution expenses.
摘要翻译：一种用于防止光致抗蚀剂图案塌陷的清洁溶液和使用该清洁溶液清洁半导体器件的方法; 清洗溶液包括溶剂和表面活性剂，并且当通过最大气泡压力法测量时，以约6个气泡/秒的速度具有约50达因/厘米或更小的动态表面张力。当形成具有约100nm或更少图案宽度的微小光致抗蚀剂图案时，可以使用清洁溶液防止光致抗蚀剂图案的崩溃。含有高浓度表面活性剂的清洗液也可以制备，以减少分配费用。

2. 发明授权

US07335455B2 Method of forming an underlayer of a bi-layer resist film and method of fabricating a semiconductor device using the same 有权
标题翻译：形成双层抗蚀剂膜的底层的方法和使用其制造半导体器件的方法
公开(公告)号：US07335455B2
公开(公告)日：2008-02-26
申请号：US10787368
申请日：2004-02-26
申请人： Hyun-Woo Kim , Jin Hong , Myoung-Ho Jung , Sang-Gyun Woo
发明人： Hyun-Woo Kim , Jin Hong , Myoung-Ho Jung , Sang-Gyun Woo
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/095 , G03F7/091
摘要： A method of forming an underlayer of a bi-layer resist including forming a blended material by blending a polymer having an aromatic group and a methacrylate polymer, and coating a substrate with the blended material. The blended material coated on the substrate is irradiated to form an underlayer. The polymer having the aromatic group may be a novolac polymer or a naphthalene polymer.
摘要翻译：一种形成双层抗蚀剂的底层的方法，包括通过混合具有芳族基团的聚合物和甲基丙烯酸酯聚合物形成共混材料，并用共混材料涂覆基材。涂布在基材上的混合材料被照射以形成底层。具有芳基的聚合物可以是酚醛清漆聚合物或萘聚合物。

3. 发明申请

US20050282092A1 Method of forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：US20050282092A1
公开(公告)日：2005-12-22
申请号：US11145535
申请日：2005-06-03
申请人： Cha-Won Koh , Sang-Gyun Woo , Gi-Sung Yeo , Myoung-Ho Jung
发明人： Cha-Won Koh , Sang-Gyun Woo , Gi-Sung Yeo , Myoung-Ho Jung
IPC分类号： G03F7/00 , G03F7/075 , G03F7/11 , G03F7/40 , H01L21/027 , H01L21/033 , H01L21/311
CPC分类号： G03F7/11 , G03F7/0752 , G03F7/40 , H01L21/0271 , H01L21/0337 , H01L21/31138 , H01L21/31144
摘要： Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening partially exposing the first organic polymer layer, is formed on the first organic polymer layer. Next, a silicon-containing polymer layer is formed on the second organic polymer layer to cover the opening. The silicon-containing polymer layer is oxidized and simultaneously the second organic polymer layer and the first organic polymer layer are ashed by oxygen plasma to form a pattern having an anisotropy-shape. The underlying layer is etched using the silicon-containing polymer layer and the first organic polymer layer as an etching mask to form a pattern.
摘要翻译：公开了形成图案的方法。在第一有机聚合物层上形成第一有机聚合物层，在其上具有下层，然后形成具有部分暴露第一有机聚合物层的开口的第二有机聚合物层。接下来，在第二有机聚合物层上形成含硅聚合物层以覆盖开口。含硅聚合物层被氧化，同时第二有机聚合物层和第一有机聚合物层被氧等离子体灰化，形成具有各向异性形状的图案。使用含硅聚合物层和第一有机聚合物层作为蚀刻掩模蚀刻下层，以形成图案。

4. 发明授权

US07842451B2 Method of forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：US07842451B2
公开(公告)日：2010-11-30
申请号：US12511538
申请日：2009-07-29
申请人： Cha-Won Koh , Sang-Gyun Woo , Gi-Sung Yeo , Myoung-Ho Jung
发明人： Cha-Won Koh , Sang-Gyun Woo , Gi-Sung Yeo , Myoung-Ho Jung
IPC分类号： G03F1/00 , G03F7/00
CPC分类号： G03F7/11 , G03F7/0752 , G03F7/40 , H01L21/0271 , H01L21/0337 , H01L21/31138 , H01L21/31144
摘要： Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening partially exposing the first organic polymer layer, is formed on the first organic polymer layer. Next, a silicon-containing polymer layer is formed on the second organic polymer layer to cover the opening. The silicon-containing polymer layer is oxidized and simultaneously the second organic polymer layer and the first organic polymer layer are ashed by oxygen plasma to form a pattern having an anisotropy-shape. The underlying layer is etched using the silicon-containing polymer layer and the first organic polymer layer as an etching mask to form a pattern.
摘要翻译：公开了形成图案的方法。在第一有机聚合物层上形成第一有机聚合物层，在其上具有下层，然后形成具有部分暴露第一有机聚合物层的开口的第二有机聚合物层。接下来，在第二有机聚合物层上形成含硅聚合物层以覆盖开口。含硅聚合物层被氧化，同时第二有机聚合物层和第一有机聚合物层被氧等离子体灰化，形成具有各向异性形状的图案。使用含硅聚合物层和第一有机聚合物层作为蚀刻掩模蚀刻下层，以形成图案。

5. 发明申请

US20090291561A1 METHOD OF FORMING PATTERN 有权
标题翻译：形成图案的方法
公开(公告)号：US20090291561A1
公开(公告)日：2009-11-26
申请号：US12511538
申请日：2009-07-29
申请人： Cha-Won Koh , Sang-Gyun Woo , Gi-Sung Yeo , Myoung-Ho Jung
发明人： Cha-Won Koh , Sang-Gyun Woo , Gi-Sung Yeo , Myoung-Ho Jung
IPC分类号： H01L21/3065 , H01L21/306
CPC分类号： G03F7/11 , G03F7/0752 , G03F7/40 , H01L21/0271 , H01L21/0337 , H01L21/31138 , H01L21/31144
摘要： Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening partially exposing the first organic polymer layer, is formed on the first organic polymer layer. Next, a silicon-containing polymer layer is formed on the second organic polymer layer to cover the opening. The silicon-containing polymer layer is oxidized and simultaneously the second organic polymer layer and the first organic polymer layer are ashed by oxygen plasma to form a pattern having an anisotropy-shape. The underlying layer is etched using the silicon-containing polymer layer and the first organic polymer layer as an etching mask to form a pattern.
摘要翻译：公开了形成图案的方法。在第一有机聚合物层上形成第一有机聚合物层，在其上具有下层，然后形成具有部分暴露第一有机聚合物层的开口的第二有机聚合物层。接下来，在第二有机聚合物层上形成含硅聚合物层以覆盖开口。含硅聚合物层被氧化，同时第二有机聚合物层和第一有机聚合物层被氧等离子体灰化，形成具有各向异性形状的图案。使用含硅聚合物层和第一有机聚合物层作为蚀刻掩模蚀刻下层，以形成图案。

6. 发明授权

US07575855B2 Method of forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：US07575855B2
公开(公告)日：2009-08-18
申请号：US11145535
申请日：2005-06-03
申请人： Cha-Won Koh , Sang-Gyun Woo , Gi-Sung Yeo , Myoung-Ho Jung
发明人： Cha-Won Koh , Sang-Gyun Woo , Gi-Sung Yeo , Myoung-Ho Jung
IPC分类号： G03F1/00
CPC分类号： G03F7/11 , G03F7/0752 , G03F7/40 , H01L21/0271 , H01L21/0337 , H01L21/31138 , H01L21/31144
摘要： Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening partially exposing the first organic polymer layer, is formed on the first organic polymer layer. Next, a silicon-containing polymer layer is formed on the second organic polymer layer to cover the opening. The silicon-containing polymer layer is oxidized and simultaneously the second organic polymer layer and the first organic polymer layer are ashed by oxygen plasma to form a pattern having an anisotropy-shape. The underlying layer is etched using the silicon-containing polymer layer and the first organic polymer layer as an etching mask to form a pattern.
摘要翻译：公开了形成图案的方法。在第一有机聚合物层上形成第一有机聚合物层，在其上具有下层，然后形成具有部分暴露第一有机聚合物层的开口的第二有机聚合物层。接下来，在第二有机聚合物层上形成含硅聚合物层以覆盖开口。含硅聚合物层被氧化，同时第二有机聚合物层和第一有机聚合物层被氧等离子体灰化，形成具有各向异性形状的图案。使用含硅聚合物层和第一有机聚合物层作为蚀刻掩模蚀刻下层，以形成图案。

7. 发明申请

US20080076255A1 MASK PATTERN FOR SEMICONDUCTOR DEVICE FABRICATION, METHOD OF FORMING THE SAME, METHOD FOR PREPARING COATING, COMPOSITION FOR FINE PATTERN FORMATION, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：用于半导体器件制造的掩模图案，其形成方法，用于制备涂层的方法，用于精细图案形成的组合物，以及制造半导体器件的方法
公开(公告)号：US20080076255A1
公开(公告)日：2008-03-27
申请号：US11949443
申请日：2007-12-03
申请人： Mitsuhiro Hata , Jung-Hwan Hah , Hyun-Woo Kim , Sang-Gyun Woo
发明人： Mitsuhiro Hata , Jung-Hwan Hah , Hyun-Woo Kim , Sang-Gyun Woo
IPC分类号： G03F1/00 , H01L21/311
CPC分类号： G03F7/40
摘要： A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formed on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.
摘要翻译：用于半导体器件制造的掩模图案包括形成在半导体衬底上的抗蚀剂图案和形成在抗蚀剂图案上的互聚物复合膜，其中互聚物复合膜包括由质子供体聚合物和质子受体之间的氢键形成的网络聚合物。

8. 发明申请

US20060046205A1 Mask pattern for semiconductor device fabrication, method of forming the same, and method of fabricating finely patterned semiconductor device 失效
标题翻译：用于半导体器件制造的掩模图案，其形成方法以及制造精细图案化的半导体器件的方法
公开(公告)号：US20060046205A1
公开(公告)日：2006-03-02
申请号：US11186913
申请日：2005-07-21
申请人： Jung-Hwan Hah , Jin Hong , Hyun-Woo Kim , Hata Mitsuhiro , Kolake Subramanya , Sang-Gyun Woo
发明人： Jung-Hwan Hah , Jin Hong , Hyun-Woo Kim , Hata Mitsuhiro , Kolake Subramanya , Sang-Gyun Woo
IPC分类号： G03F7/00
CPC分类号： G03F7/40 , B82Y30/00 , G03F7/0752 , G03F7/165 , H01L21/0274
摘要： Provided are a mask pattern including a silicon-containing self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on the resist pattern. The self-assembled molecular layer has a silica network formed by a sol-gel reaction. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed only on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched by using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.
摘要翻译：提供了包括含硅自组装分子层的掩模图案，其形成方法和制造半导体器件的方法。掩模图案包括形成在半导体衬底上的抗蚀剂图案和形成在抗蚀剂图案上的自组装分子层。自组装分子层具有通过溶胶 - 凝胶反应形成的二氧化硅网络。为了形成掩模图案，首先，在覆盖基板的下层上形成抗蚀剂图案，使底层暴露于第一宽度。然后，仅在抗蚀剂图案的表面上选择性地形成自组装分子层，以使底层暴露于小于第一宽度的第二宽度。通过使用抗蚀剂图案和自组装分子层作为蚀刻掩模来蚀刻底层以获得精细图案。

9. 发明授权

US07604911B2 Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating, composition for fine pattern formation, and method of fabricating semiconductor device 有权
标题翻译：用于半导体器件制造的掩模图案，其形成方法，制备涂层的方法，精细图案形成的组合物以及制造半导体器件的方法
公开(公告)号：US07604911B2
公开(公告)日：2009-10-20
申请号：US11949443
申请日：2007-12-03
申请人： Mitsuhiro Hata , Jung-Hwan Hah , Hyun-Woo Kim , Sang-Gyun Woo
发明人： Mitsuhiro Hata , Jung-Hwan Hah , Hyun-Woo Kim , Sang-Gyun Woo
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/40
摘要： A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formed on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.
摘要翻译：用于半导体器件制造的掩模图案包括形成在半导体衬底上的抗蚀剂图案和形成在抗蚀剂图案上的互聚物复合膜，其中互聚物复合膜包括由质子供体聚合物和质子受体之间的氢键形成的网络聚合物。

10. 发明申请

US20050227492A1 Mask pattern for semiconductor device fabrication, method of forming the same, and method of fabricating finely patterned semiconductor device 审中-公开
标题翻译：用于半导体器件制造的掩模图案，其形成方法以及制造精细图案化的半导体器件的方法
公开(公告)号：US20050227492A1
公开(公告)日：2005-10-13
申请号：US11092003
申请日：2005-03-29
申请人： Jung-Hwan Hah , Hyun-Woo Kim , Jin-Young Yoon , Mitsuhiro Hata , Kolake Subramanya , Sang-Gyun Woo
发明人： Jung-Hwan Hah , Hyun-Woo Kim , Jin-Young Yoon , Mitsuhiro Hata , Kolake Subramanya , Sang-Gyun Woo
IPC分类号： G03F7/40 , G03F7/004 , G03F7/16 , H01L21/027 , H01L21/033 , H01L21/3065 , H01L21/308 , H01L21/311 , H01L21/3213
CPC分类号： G03F7/40 , B82Y30/00 , G03F7/165 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/32139
摘要： Provided are a mask pattern including a self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on at least a sidewall of the resist pattern. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.
摘要翻译：提供了包括自组装分子层的掩模图案，其形成方法和制造半导体器件的方法。掩模图案包括形成在半导体衬底上的抗蚀剂图案和形成在抗蚀图案的至少侧壁上的自组装分子层。为了形成掩模图案，首先，在覆盖基板的下层上形成抗蚀剂图案，使底层暴露于第一宽度。然后，在抗蚀剂图案的表面上选择性地形成自组装分子层，以使底层暴露于小于第一宽度的第二宽度。使用抗蚀剂图案和自组装分子层作为蚀刻掩模来蚀刻底层以获得精细图案。

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