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11. 发明授权

US6073576A Substrate edge seal and clamp for low-pressure processing equipment 失效
标题翻译：用于低压加工设备的基板边缘密封和夹具
公开(公告)号：US6073576A
公开(公告)日：2000-06-13
申请号：US977822
申请日：1997-11-25
申请人： Mehrdad M. Moslehi , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Cecil J. Davis
IPC分类号： C23C14/50 , C23C16/458 , C23C16/00
CPC分类号： C23C14/50 , C23C16/4585 , Y10S414/136 , Y10S414/14 , Y10S414/141 , Y10T279/35
摘要： A low-pressure processor for processing substrates includes a chuck that engages the substrates' peripheries for purposes of clamping, sealing, and centering the substrates on chuck bodies. For accomplishing all three purposes, a mechanical clamp can be arranged with two sealing regions. One of the sealing regions seals the clamp to a chuck body or an extension of the chuck body, and another of the sealing regions engages a peripheral edge surface of a substrate for sealing the clamp to the substrate. The second sealing region includes an inclined seating surface that engages a front edge of the substrate's peripheral edge surface and divides a clamping force into a first component that presses the substrate against the chuck body and a second component that centers the substrate on the chuck body. The peripheral engagement of the substrate exposes substantially the entire front surface of the substrate to processing and exposes substantially the entire back surface of the substrate to a heat-transfer gas for enhancing thermal transfers between the substrate and the temperature-regulated chuck body.
摘要翻译：用于处理基板的低压处理器包括与基板周边接合的卡盘，用于夹紧，密封和将基板对准在卡盘体上。为了实现所有这三个目的，机械夹具可以布置有两个密封区域。一个密封区域将夹具密封到卡盘主体或卡盘主体的延伸部分，另一个密封区域与基板的周边边缘表面接合，以将夹具密封到基板。第二密封区域包括倾斜的就座表面，其与衬底的周边边缘表面的前边缘接合并且将夹紧力分成第一部件，该第一部件将衬底压靠在卡盘主体上;以及第二部件，其将衬底定位在卡盘主体上。衬底的周边接合基本上暴露了衬底的整个前表面，从而基本上将衬底的整个后表面基本上暴露于传热气体，以增强衬底和温度调节卡盘体之间的热传递。

12. 发明授权

US6039848A Ultra-high vacuum apparatus and method for high productivity physical vapor deposition. 失效
标题翻译：超高真空装置和高生产率物理气相沉积方法。
公开(公告)号：US6039848A
公开(公告)日：2000-03-21
申请号：US958877
申请日：1997-10-27
申请人： Mehrdad M. Moslehi , Cecil J. Davis , Dorian Heimanson
发明人： Mehrdad M. Moslehi , Cecil J. Davis , Dorian Heimanson
IPC分类号： C23C14/35 , C23C14/56 , H01J37/34 , C23C14/34
CPC分类号： H01J37/3408 , C23C14/35 , C23C14/564
摘要： A magnetron sputtering system is provided that uses a backing plate assembly having an insulating spacer ring coupled between and hermetically sealed to the backing plate and an extender ring. The insulating spacer ring can be constructed from a ceramic material, and the extender ring can be constructed from a metal material. The use of this backing plate assembly allows the backing plate assembly to be coupled directly to the chamber walls with a metal-to-metal contact, while the backing plate remains electrically isolated from the chamber walls. This allows the sealing of a vacuum chamber in the magnetron sputtering system using a seal suitable for creating an ultra-high vacuum in the vacuum chamber.
摘要翻译：提供了一种磁控溅射系统，其使用背板组件，该背板组件具有联接在背衬板和延伸环之间并与气垫密封的绝缘间隔环。绝缘间隔环可以由陶瓷材料构成，并且增量环可以由金属材料构成。使用该背板组件允许背板组件通过金属对金属接触直接耦合到室壁，而背板保持与室壁电隔离。这允许使用适于在真空室中产生超高真空的密封来密封磁控溅射系统中的真空室。

13. 发明授权

US5972803A High throughput optical curing process for semiconductor device manufacturing 失效
标题翻译：半导体器件制造的高通量光学固化工艺
公开(公告)号：US5972803A
公开(公告)日：1999-10-26
申请号：US955422
申请日：1997-10-22
申请人： Jing Shing Shu , Ming-Jang Hwang , Mehrdad M. Moslehi , Cecil J. Davis
发明人： Jing Shing Shu , Ming-Jang Hwang , Mehrdad M. Moslehi , Cecil J. Davis
IPC分类号： B29C35/02 , B29L31/34 , H01L21/3105 , H01L21/314 , H01L21/768 , H01L23/522 , H01L21/469 , H01L21/02
CPC分类号： H01L21/76828 , H01L21/31058
摘要： This is a curing method of low-k dielectric material in a semiconductor device and system for such. The method may comprise: depositing metal interconnection lines; depositing the low-k dielectric material layer over the lines; and curing the low-k dielectric material layer with a heating lamp for less than 10 minutes, wherein the heating lamp provides optical radiation energy in the infrared spectral range of about 1 micron to 3.5 microns in wavelength. The heating lamp may be a tungsten-halogen lamp.
摘要翻译：这是半导体器件中的低k电介质材料的固化方法及其制造方法。该方法可以包括：沉积金属互连线; 在线路上沉积低k电介质材料层; 以及用加热灯固化低k电介质材料层少于10分钟，其中加热灯在波长为约1微米至3.5微米的红外光谱范围内提供光辐射能量。加热灯可以是卤钨灯。

14. 发明授权

US5876573A High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition 失效
标题翻译：高磁通阴极装置和高生产率物理气相沉积方法
公开(公告)号：US5876573A
公开(公告)日：1999-03-02
申请号：US677951
申请日：1996-07-10
申请人： Mehrdad M. Moslehi , Dorian Heimanson , Cecil J. Davis , Thomas R. Omstead
发明人： Mehrdad M. Moslehi , Dorian Heimanson , Cecil J. Davis , Thomas R. Omstead
IPC分类号： C23C14/34 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3435 , C23C14/3407 , C23C14/35 , H01J37/3408 , H01J37/3497
摘要： A magnetron sputtering system is provided that uses cooling channels in the magnetron assembly to cool the target. The magnetron sputtering system also generates low pressure region in the magnetron assembly such that the backing plate sees a pressure differential much lower than atmospheric pressure. The backing plate is reduced in thickness and provides less of a barrier to the generated magnetic field.
摘要翻译：提供磁控溅射系统，其使用磁控管组件中的冷却通道来冷却靶。磁控溅射系统还在磁控管组件中产生低压区域，使得背板看到的压差远低于大气压。背板的厚度减小，并且对产生的磁场提供较少的屏障。

15. 发明授权

US06905578B1 Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure 失效
标题翻译：多层材料结构的多目标物理气相沉积的装置和方法
公开(公告)号：US06905578B1
公开(公告)日：2005-06-14
申请号：US09067143
申请日：1998-04-27
申请人： Mehrdad M. Moslehi , Cecil J. Davis , Christopher J. Mann , Dwain R. Jakubik , Ajit P. Paranjpe
发明人： Mehrdad M. Moslehi , Cecil J. Davis , Christopher J. Mann , Dwain R. Jakubik , Ajit P. Paranjpe
IPC分类号： C23C14/56 , C23C14/34 , C23C16/00
CPC分类号： C23C14/568
摘要： An apparatus and method for depositing plural layers of materials on a substrate within a single vacuum chamber allows high-throughput deposition of structures such as these for GMR and MRAM application. An indexing mechanism aligns a substrate with each of plural targets according to the sequence of the layers in the structure. Each target deposits material using a static physical-vapor deposition technique. A shutter can be interposed between a target and a substrate to block the deposition process for improved deposition control. The shutter can also preclean a target or the substrate and can also be used for mechanical chopping of the deposition process. In alternative embodiments, plural substrates may be aligned sequentially with plural targets to allow simultaneous deposition of plural structures within the single vacuum chamber. A monitoring and control device can be wed to optimize equipment state, process state, and wafer state parameters by sensing each respective state during or after the deposition process.
摘要翻译：用于在单个真空室内的衬底上沉积多层材料的装置和方法允许诸如这些结构的高通量沉积用于GMR和MRAM应用。分度机构根据结构中的层序列将衬底与多个靶中的每一个对准。每个目标使用静态物理气相沉积技术沉积材料。可以在目标和基板之间插入快门以阻止沉积工艺以改善沉积控制。快门还可以预清洁目标物或基底，并且还可用于沉积过程的机械切割。在替代实施例中，多个基板可以与多个靶顺序对准，以允许在单个真空室内同时沉积多个结构。可以通过在沉积过程中或之后感测每个相应的状态来优化设备状态，过程状态和晶片状态参数的监控和控制设备。

16. 发明授权

US06508885B1 Edge sealing structure for substrate in low-pressure processing environment 失效
标题翻译：低压处理环境中基材的边缘密封结构
公开(公告)号：US06508885B1
公开(公告)日：2003-01-21
申请号：US09563961
申请日：2000-05-03
申请人： Mehrdad M. Moslehi , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Cecil J. Davis
IPC分类号： C23C1600
CPC分类号： C23C14/50 , C23C16/4585 , Y10S414/136 , Y10S414/14 , Y10S414/141 , Y10T279/35
摘要： A low-pressure processor for processing substrates includes a chuck that engages the substrates' peripheries for purposes of clamping, sealing, and centering the substrates on chuck bodies. For accomplishing all three purposes, a mechanical clamp can be arranged with two sealing regions. One of the sealing regions seals the clamp to a chuck body or an extension of the chuck body, and another of the sealing regions engages a peripheral edge surface of a substrate for sealing the clamp to the substrate. The second sealing region includes an inclined seating surface that engages a front edge of the substrate's peripheral edge surface and divides a clamping force into a first component that presses the substrate against the chuck body and a second component that centers the substrate on the chuck body. The peripheral engagement of the substrate exposes substantially the entire front surface of the substrate to processing and exposes substantially the entire back surface of the substrate to a heat-transfer gas for enhancing thermal transfers between the substrate and the temperature-regulated chuck body.
摘要翻译：用于处理基板的低压处理器包括与基板周边接合的卡盘，用于夹紧，密封和将基板对准在卡盘体上。为了实现所有这三个目的，机械夹具可以布置有两个密封区域。一个密封区域将夹具密封到卡盘主体或卡盘主体的延伸部分，另一个密封区域与基板的周边边缘表面接合，以将夹具密封到基板。第二密封区域包括倾斜的就座表面，其与衬底的周边边缘表面的前边缘接合并且将夹紧力分成第一部件，该第一部件将衬底压靠在卡盘主体上;以及第二部件，其将衬底定位在卡盘主体上。衬底的周边接合基本上暴露了衬底的整个前表面，从而基本上将衬底的整个后表面基本上暴露于传热气体，以增强衬底和温度调节卡盘体之间的热传递。

17. 发明授权

US06221217B1 Physical vapor deposition system having reduced thickness backing plate 有权
标题翻译：物理气相沉积系统具有减小厚度的背板
公开(公告)号：US06221217B1
公开(公告)日：2001-04-24
申请号：US09205113
申请日：1998-12-03
申请人： Mehrdad M. Moslehi , Dorian Heimanson , Cecil J. Davis , Thomas R. Omstead
发明人： Mehrdad M. Moslehi , Dorian Heimanson , Cecil J. Davis , Thomas R. Omstead
IPC分类号： C23C1434
CPC分类号： H01J37/3435 , C23C14/3407 , C23C14/35 , H01J37/3408 , H01J37/3497
摘要： A magnetron sputtering system is provided that uses cooling channels in the magnetron assembly to cool the target. The magnetron sputtering system also generates low pressure region in the magnetron assembly such that the backing plate sees a pressure differential much lower than atmospheric pressure. In one embodiment, the backing plate includes a center post to support the backing plate during operation. The backing plate is reduced in thickness and provides less of a barrier to the generated magnetic field.
摘要翻译：提供磁控溅射系统，其使用磁控管组件中的冷却通道来冷却靶。磁控管溅射系统还在磁控管组件中产生低压区域，使得背板看到的压差远低于大气压。在一个实施例中，背板包括在操作期间支撑背板的中心柱。背板的厚度减小，并且对产生的磁场提供较少的屏障。

18. 发明授权

US6106682A Thin-film processing electromagnet for low-skew magnetic orientation 失效
标题翻译：用于低偏磁磁取向的薄膜加工电磁铁
公开(公告)号：US6106682A
公开(公告)日：2000-08-22
申请号：US83742
申请日：1998-05-22
申请人： Mehrdad M. Moslehi , Shiyuan Cheng , Xiangqun Chen , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Shiyuan Cheng , Xiangqun Chen , Cecil J. Davis
IPC分类号： C23C14/34 , C23C14/35 , C23C16/08 , C23C16/10 , C23C16/16 , C23C16/18 , H01F3/02 , H01F7/06 , H01F7/20
CPC分类号： C23C14/3414 , C23C14/351 , C23C16/08 , C23C16/10 , C23C16/16 , C23C16/18 , H01F7/20
摘要： An electromagnet having one or more coils wrapped around a plate-shaped core produces a uniaxial magnetic filed in the vicinity of a substrate surface for orienting a magnetic film deposited onto the substrate surface. Variations in the magnetic mass of the plate-shaped core or in the magnetic permeability of the core mass are made to reduce angular skew and to improve uniformity of the uniaxial magnetic field. The variations generally involve a reduction in magnetic mass or permeability near a center of the core with respect to a periphery of the core. Cavities of various sizes and shapes but having symmetry with a magnetic axis can be formed in the core for this purpose.
摘要翻译：具有缠绕在板状芯上的一个或多个线圈的电磁体在基板表面附近产生用于使沉积在基板表面上的磁性膜定向的单轴磁场。制成板状芯的磁性质量或芯体的磁导率的变化，以减小角偏移并提高单轴磁场的均匀性。这些变化通常涉及相对于芯的周边在芯的中心附近减小磁性质量或磁导率。为此，可以在芯中形成各种尺寸和形状但具有与磁轴对称的腔体。

19. 发明授权

US5464499A Multi-electrode plasma processing apparatus 失效
标题翻译：多电极等离子体处理装置
公开(公告)号：US5464499A
公开(公告)日：1995-11-07
申请号：US147761
申请日：1993-11-04
申请人： Mehrdad M. Moslehi , Cecil J. Davis , John Jones , Robert T. Matthews
发明人： Mehrdad M. Moslehi , Cecil J. Davis , John Jones , Robert T. Matthews
IPC分类号： H01L21/205 , C23C16/44 , C23C16/509 , C23C16/517 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/46 , H05H1/00
CPC分类号： H01J37/32862 , C23C16/4405 , C23C16/509 , C23C16/517 , H01J37/32165 , H01J37/32192 , H01J37/32541 , H01J37/32587 , H01J37/32688 , Y10S438/905
摘要： A multi-electrode plasma processing system (10) provides flexible plasma processing capabilities for semiconductor device fabrication. The plasma processing equipment (10) includes a gas showerhead assembly (52) a radio-frequency chuck (24), and screen electrode (66). The screen electrode (66) includes base (68) for positioning within process chamber (10) and is made of an insulating material such as a ceramic or teflon. A perforated screen (70) is integral to base (68) and generates a plasma from a plasma-producing gas via a radio-frequency power source (104). The screen (70) has numerous passageways (78) to allow interaction of plasma and the process chamber walls. The screen (70) surrounds showerhead assembly (52) and semiconductor wafer (22) and can influence the entire semiconductor wafer plasma processing environment (62) including the plasma density and uniformity. The circuitry (74) electrically connect screen (70) to a power source (100) or (104) to cause screen (70) electrode to affect process plasma density and distribution. Any of the plasma electrodes showerhead assembly (52), chuck (24), or screen electrode (66) may be connected to a low-frequency power source (108), a high-frequency power source (100 or 132), electrical ground (110), or may remain electrically floating (94).
摘要翻译：多电极等离子体处理系统（10）为半导体器件制造提供了灵活的等离子体处理能力。等离子体处理设备（10）包括气体喷头组件（52），射频卡盘（24）和屏幕电极（66）。屏幕电极（66）包括用于定位在处理室（10）内的基座（68），并且由诸如陶瓷或聚四氟乙烯的绝缘材料制成。穿孔筛（70）与基部（68）成一体，并且经由射频电源（104）从等离子体产生气体产生等离子体。屏幕（70）具有许多通道（78），以允许等离子体和处理室壁的相互作用。屏幕（70）围绕喷头组件（52）和半导体晶片（22）并且可以影响包括等离子体密度和均匀性的整个半导体晶片等离子体处理环境（62）。电路（74）将屏幕（70）电连接到电源（100）或（104）以使屏幕（70）电极影响处理等离子体密度和分布。任何等离子电极喷头组件（52），卡盘（24）或屏蔽电极（66）可以连接到低频电源（108），高频电源（100或132），电接地（110），或者可以保持电浮动（94）。

20. 发明授权

US5453124A Programmable multizone gas injector for single-wafer semiconductor processing equipment 失效
标题翻译：可编程多单元气体注入器，用于单晶片半导体加工设备
公开(公告)号：US5453124A
公开(公告)日：1995-09-26
申请号：US261650
申请日：1994-06-17
申请人： Mehrdad M. Moslehi , Cecil J. Davis , Robert T. Matthews
发明人： Mehrdad M. Moslehi , Cecil J. Davis , Robert T. Matthews
IPC分类号： C23C16/44 , C23C16/455 , C23C16/52 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/45561 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/45576 , C23C16/52
摘要： A programmable multizone fluids injector for use in single-wafer semiconductor processing equipment including an injector having a plurality of orifices therein which are divided into a number of separate zones or areas. These zones or areas are connected by means of appropriate passageways and conduits to a source of process fluids. Each of the separate conduits has at least one flow control device located therein for independently controlling the amounts and ratios of process fluids flowing into each zone. The fluid control devices are responsive to input signals so that the fluid flow rates from the orifices can maintain a desired flow pattern within the process chamber to suit the individual needs of a particular fabrication processs.
摘要翻译：一种可用于单晶片半导体处理设备的可编程多区域流体注入器，包括其中具有多个孔的注射器，其被分成多个单独的区域或区域。这些区域或区域通过适当的通道和管道连接到工艺流体源。每个分离的管道具有位于其中的至少一个流量控制装置，用于独立地控制流入每个区域的工艺流体的量和比例。流体控制装置响应于输入信号，使得来自孔口的流体流速可以在处理室内保持期望的流动模式，以适应特定制造过程的个体需要。

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