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    • 3. 发明授权
    • Distributed-array magnetron-plasma processing module and method
    • 分布式阵列磁控管等离子体处理模块及方法
    • US5082542A
    • 1992-01-21
    • US561851
    • 1990-08-02
    • Mehrdad M. MoslehiCecil J. Davis
    • Mehrdad M. MoslehiCecil J. Davis
    • H01J37/32
    • H01J37/32623H01J37/3266
    • A semiconductor wafer plasma processing magnetron module (12) for magnetron-plasma-enhanced processing of semiconductor wafers comprises a base (50) and distributed magnet array (52). The magnet array (52) comprises a plurality of associated magnet unit cells (54). Unit cells (54) associated for producing a periodic magnetic field at the semiconductor wafer (22). The magnetron (12), including the magnetic array (52), mounts to base (50). Unit cells (54) form a repetitive pattern across the surface of magnet array (52). Magnetron module (12) produces a magnetic field possessing periodic uniformity. Unit cells (54) associate to permit expansion of magnet array (52) for any wafer size. A preferred embodiment of the invention includes a hexagonal configuration of magnets (56) and (58) that form unit cells (54).
    • 用于半导体晶片的磁控管等离子体增强处理的半导体晶片等离子体处理磁控管模块(12)包括基座(50)和分布磁体阵列(52)。 磁体阵列(52)包括多个相关联的磁体单元电池(54)。 用于在半导体晶片(22)处产生周期性磁场的单元电池(54)。 包括磁性阵列(52)的磁控管(12)安装到基座(50)上。 单元电池(54)在磁体阵列(52)的表面上形成重复的图案。 磁控管模块(12)产生具有周期性均匀性的磁场。 单元电池(54)关联以允许用于任何晶片尺寸的磁体阵列(52)的扩展。 本发明的优选实施例包括形成单位电池(54)的磁体(56)和(58)的六边形构造。
    • 8. 发明授权
    • Multi-zone illuminator with embedded process control sensors
    • 带嵌入式过程控制传感器的多区域照明器
    • US5367606A
    • 1994-11-22
    • US56599
    • 1993-08-10
    • Mehrdad M. MoslehiRobert MatthewsCecil J. Davis
    • Mehrdad M. MoslehiRobert MatthewsCecil J. Davis
    • H01L21/26G01J5/00H01L21/00H01L21/324H05B3/62
    • H01L21/67115
    • A multi-zone illuminator for processing semiconductor wafers is described which comprises a plurality of source lamps and dummy lamps embedded in the reflector side of a lamp housing. The source lamps are arranged in a plurality of concentric circular zones. The illuminator also comprises plurality of light pipes for receiving multi-point temperature sensors to measure the semiconductor wafer temperature and its distribution uniformity. A gold-plated reflector plate is attached to the bottom side of the lamp housing for reflecting and directing optical energy toward the wafer surface. The distance between the reflector plate and the wafer and the lamps and the wafer may be adjusted with the use of a spacial elevator and adaptor assembly. The multi-zone illuminator allows uniform wafer heating during both transient and steady-state wafer heating cycles.
    • 描述了用于处理半导体晶片的多区域照明器,其包括嵌入在灯壳体的反射器侧中的多个源灯和虚拟灯。 源灯布置成多个同心圆形区域。 照明器还包括用于接收多点温度传感器以测量半导体晶片温度及其分布均匀性的多个光管。 一个镀金的反光板安装在灯壳的底部,用于将光能反射并引导到晶片表面。 可以使用空间电梯和适配器组件来调节反射板与晶片与灯和晶片之间的距离。 多区域照明器允许在瞬态和稳态晶片加热循环期间均匀的晶片加热。
    • 10. 发明授权
    • Method and apparatus for thin film deposition using an active shutter
    • 使用主动快门进行薄膜沉积的方法和装置
    • US06444103B1
    • 2002-09-03
    • US09662575
    • 2000-09-15
    • Mehrdad M. MoslehiYong Jin LeeCecil J. DavisAjit P. Paranjpe
    • Mehrdad M. MoslehiYong Jin LeeCecil J. DavisAjit P. Paranjpe
    • C23C1434
    • H01J37/3447C23C14/3464C23C14/564
    • Material is deposited from an active shutter onto a substrate located in a processing chamber housing with a shutter target coupled to a shutter target assembly. A first target assembly located in the housing supports a target for physical-vapor deposition of a first material onto the substrate. A shutter is selectively moveable to extend into a closed or activated position and to retract into an open position. The shutter target assembly is coupled to the shutter such that when the shutter is in the closed position, the shutter target assembly is positioned to allow deposition of material from the shutter target onto the substrate. When the shutter is in the open position, the first target is positioned to deposit material onto the substrate. Alternating layers of materials may be deposited by the shutter target and first target by cycling the shutter between an open position and a closed position.
    • 材料从活动快门沉积到位于处理室壳体中的基板上,其中快门目标件联接到快门目标组件。 位于壳体中的第一目标组件支撑用于将第一材料物理 - 气相沉积到衬底上的靶。 快门选择性地可移动以延伸到关闭或启动位置并缩回到打开位置。 快门目标组件联接到快门,使得当快门处于关闭位置时,快门目标组件被定位成允许材料从快门目标物体沉积到基板上。 当快门处于打开位置时,第一目标定位成将材料沉积到基板上。 通过在打开位置和关闭位置之间循环活门,可以通过快门目标和第一目标来沉积材料的交替层。