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1. 发明授权

US5464499A Multi-electrode plasma processing apparatus 失效
标题翻译：多电极等离子体处理装置
公开(公告)号：US5464499A
公开(公告)日：1995-11-07
申请号：US147761
申请日：1993-11-04
申请人： Mehrdad M. Moslehi , Cecil J. Davis , John Jones , Robert T. Matthews
发明人： Mehrdad M. Moslehi , Cecil J. Davis , John Jones , Robert T. Matthews
IPC分类号： H01L21/205 , C23C16/44 , C23C16/509 , C23C16/517 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/46 , H05H1/00
CPC分类号： H01J37/32862 , C23C16/4405 , C23C16/509 , C23C16/517 , H01J37/32165 , H01J37/32192 , H01J37/32541 , H01J37/32587 , H01J37/32688 , Y10S438/905
摘要： A multi-electrode plasma processing system (10) provides flexible plasma processing capabilities for semiconductor device fabrication. The plasma processing equipment (10) includes a gas showerhead assembly (52) a radio-frequency chuck (24), and screen electrode (66). The screen electrode (66) includes base (68) for positioning within process chamber (10) and is made of an insulating material such as a ceramic or teflon. A perforated screen (70) is integral to base (68) and generates a plasma from a plasma-producing gas via a radio-frequency power source (104). The screen (70) has numerous passageways (78) to allow interaction of plasma and the process chamber walls. The screen (70) surrounds showerhead assembly (52) and semiconductor wafer (22) and can influence the entire semiconductor wafer plasma processing environment (62) including the plasma density and uniformity. The circuitry (74) electrically connect screen (70) to a power source (100) or (104) to cause screen (70) electrode to affect process plasma density and distribution. Any of the plasma electrodes showerhead assembly (52), chuck (24), or screen electrode (66) may be connected to a low-frequency power source (108), a high-frequency power source (100 or 132), electrical ground (110), or may remain electrically floating (94).
摘要翻译：多电极等离子体处理系统（10）为半导体器件制造提供了灵活的等离子体处理能力。等离子体处理设备（10）包括气体喷头组件（52），射频卡盘（24）和屏幕电极（66）。屏幕电极（66）包括用于定位在处理室（10）内的基座（68），并且由诸如陶瓷或聚四氟乙烯的绝缘材料制成。穿孔筛（70）与基部（68）成一体，并且经由射频电源（104）从等离子体产生气体产生等离子体。屏幕（70）具有许多通道（78），以允许等离子体和处理室壁的相互作用。屏幕（70）围绕喷头组件（52）和半导体晶片（22）并且可以影响包括等离子体密度和均匀性的整个半导体晶片等离子体处理环境（62）。电路（74）将屏幕（70）电连接到电源（100）或（104）以使屏幕（70）电极影响处理等离子体密度和分布。任何等离子电极喷头组件（52），卡盘（24）或屏蔽电极（66）可以连接到低频电源（108），高频电源（100或132），电接地（110），或者可以保持电浮动（94）。

2. 发明授权

US5286297A Multi-electrode plasma processing apparatus 失效
标题翻译：多电极等离子体处理装置
公开(公告)号：US5286297A
公开(公告)日：1994-02-15
申请号：US903637
申请日：1992-06-24
申请人： Mehrdad M. Moslehi , Cecil J. Davis , John Jones , Robert T. Matthews
发明人： Mehrdad M. Moslehi , Cecil J. Davis , John Jones , Robert T. Matthews
IPC分类号： H01L21/205 , C23C16/44 , C23C16/509 , C23C16/517 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/46 , C23C14/22
CPC分类号： H01J37/32862 , C23C16/4405 , C23C16/509 , C23C16/517 , H01J37/32165 , H01J37/32192 , H01J37/32541 , H01J37/32587 , H01J37/32688 , Y10S438/905
摘要： A multi-electrode plasma processing system (10) provides flexible plasma processing capabilities for semiconductor device fabrication. The plasma processing equipment (10) includes a gas showerhead assembly (52) a radio-frequency chuck (24), and screen electrode (66). The screen electrode (66) includes base (68) for positioning within process chamber (10) and is made of an insulating material such as a ceramic or teflon. A perforated screen (70) is integral to base (68) and generates a plasma from a plasma-producing gas via a radio-frequency power source (104). The screen (70) has numerous passageways (78) to allow interaction of plasma and the process chamber walls. The screen (70) surrounds showerhead assembly (52) and semiconductor wafer (22) and can influence the entire semiconductor wafer plasma processing environment (62) including the plasma density and uniformity. The circuitry (74) electrically connect screen (70) to a power source (100) or (104) to cause screen (70) electrode to affect process plasma density and distribution. Any of the plasma electrodes showerhead assembly (52), chuck (24), or screen electrode (66) may be connected to a low-frequency power source (108), a high-frequency power source (100 or 132), electrical ground (110), or may remain electrically floating (94).
摘要翻译：多电极等离子体处理系统（10）为半导体器件制造提供了灵活的等离子体处理能力。等离子体处理设备（10）包括气体喷头组件（52），射频卡盘（24）和屏幕电极（66）。屏幕电极（66）包括用于定位在处理室（10）内的基座（68），并且由诸如陶瓷或聚四氟乙烯的绝缘材料制成。穿孔筛（70）与基部（68）成一体，并且经由射频电源（104）从等离子体产生气体产生等离子体。屏幕（70）具有许多通道（78），以允许等离子体和处理室壁的相互作用。屏幕（70）围绕喷头组件（52）和半导体晶片（22）并且可以影响包括等离子体密度和均匀性的整个半导体晶片等离子体处理环境（62）。电路（74）将屏幕（70）电连接到电源（100）或（104）以使屏幕（70）电极影响处理等离子体密度和分布。任何等离子电极喷头组件（52），卡盘（24）或屏蔽电极（66）可以连接到低频电源（108），高频电源（100或132），电接地（110），或者可以保持电浮动（94）。

3. 发明授权

US5453124A Programmable multizone gas injector for single-wafer semiconductor processing equipment 失效
标题翻译：可编程多单元气体注入器，用于单晶片半导体加工设备
公开(公告)号：US5453124A
公开(公告)日：1995-09-26
申请号：US261650
申请日：1994-06-17
申请人： Mehrdad M. Moslehi , Cecil J. Davis , Robert T. Matthews
发明人： Mehrdad M. Moslehi , Cecil J. Davis , Robert T. Matthews
IPC分类号： C23C16/44 , C23C16/455 , C23C16/52 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/45561 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/45576 , C23C16/52
摘要： A programmable multizone fluids injector for use in single-wafer semiconductor processing equipment including an injector having a plurality of orifices therein which are divided into a number of separate zones or areas. These zones or areas are connected by means of appropriate passageways and conduits to a source of process fluids. Each of the separate conduits has at least one flow control device located therein for independently controlling the amounts and ratios of process fluids flowing into each zone. The fluid control devices are responsive to input signals so that the fluid flow rates from the orifices can maintain a desired flow pattern within the process chamber to suit the individual needs of a particular fabrication processs.
摘要翻译：一种可用于单晶片半导体处理设备的可编程多区域流体注入器，包括其中具有多个孔的注射器，其被分成多个单独的区域或区域。这些区域或区域通过适当的通道和管道连接到工艺流体源。每个分离的管道具有位于其中的至少一个流量控制装置，用于独立地控制流入每个区域的工艺流体的量和比例。流体控制装置响应于输入信号，使得来自孔口的流体流速可以在处理室内保持期望的流动模式，以适应特定制造过程的个体需要。

4. 发明授权

US5446825A High performance multi-zone illuminator module for semiconductor wafer processing 失效
标题翻译：用于半导体晶圆处理的高性能多区域照明模块
公开(公告)号：US5446825A
公开(公告)日：1995-08-29
申请号：US114550
申请日：1993-08-31
申请人： Mehrdad M. Moslehi , Cecil J. Davis , Robert T. Matthews
发明人： Mehrdad M. Moslehi , Cecil J. Davis , Robert T. Matthews
IPC分类号： C23C16/48 , H01L21/00 , H01L21/324 , H01L21/205
CPC分类号： H01L21/67115 , C23C16/481
摘要： A high-performance multi-zone illuminator module (130) for directing optical energy onto a semiconductor wafer (60) in a device fabrication reactor to improve overall semiconductor wafer processing uniformity comprises a housing connectable to the wafer processing reactor and having a bottom side and a reflector mounted to the bottom side. The reflector comprises a plurality of concentric circular zones (190, 192, 194 or 270, 262, 266, 264) for reflecting optical energy that include a plurality of circularly distributed lamp sockets (185). Engaged within the lamp sockets (185) are a plurality of point-source lamps (196) for directing optical energy to the semiconductor wafer (60) surface. The point-source lamps (196) are associated with the reflector (184 and 186 or 276 and 277) for directing light toward the wafer. The lamps are associated within each circular zone to provide an approximately continuous and diffused light ring at the semiconductor wafer (60). The multiple circular lamp zones plus the center zone can be controlled independently to allow real-time wafer temperature uniformity slip-free control for uniform device processing over a wide range of wafer temperatures.
摘要翻译：用于将光能引导到装置制造反应器中的半导体晶片（60）上以改善总体半导体晶片处理均匀性的高性能多区域照明器模块（130）包括可连接到晶片处理反应器并具有底侧和安装在底部的反射器。反射器包括用于反射包括多个圆形分布的灯插座（185）的光能的多个同心圆形区域（190,192,194或270,262,266,264）。灯座（185）中的多个点光源灯（196）用于将光能引导到半导体晶片（60）表面。点光源（196）与用于将光引向晶片的反射器（184和186或276和277）相关联。灯在每个圆形区域内相关联，以在半导体晶片（60）处提供大致连续和扩散的光环。可以独立地控制多个圆形灯区域和中心区域，以允许实时晶片温度均匀性无滑动控制，以在宽范围的晶圆温度下进行均匀的器件处理。

5. 发明授权

US5653838A Glass heating and sealing system 失效
标题翻译：玻璃加热密封系统
公开(公告)号：US5653838A
公开(公告)日：1997-08-05
申请号：US535423
申请日：1995-09-28
申请人： Ming-Jang Hwang , Chi-Cheong Shen , Cecil J. Davis , Robert T. Matthews , Phillip Chapados, Jr.
发明人： Ming-Jang Hwang , Chi-Cheong Shen , Cecil J. Davis , Robert T. Matthews , Phillip Chapados, Jr.
IPC分类号： C03B23/24 , C03B29/02 , H01J9/26 , B32B31/24
CPC分类号： C03B23/245 , C03B29/02 , H01J9/261 , Y02P40/57
摘要： A glass heating and sealing system (10, 30, 60) and method for manufacturing a flat panel display including anode and cathode glass panels with a vacuum compartment between them includes a plurality of vacuum chambers (12, 14, 16, 18, 20, 32, 34, 36, 38, 61, 76) for processing glass panels (39, 63, 74). Transfer of glass panels (39, 63, 74) between chambers (12, 14, 16, 18, 20, 32, 34, 36, 38, 61, 76) is accomplished by a transfer mechanism (24, 42, 68, 72) located within a central vacuum chamber (22, 40, 70) commonly connected to the other chambers. System (10, 30, 60) may include a rapid thermal processing (RTP) chamber (14, 34, 38, 76) for quick and even heating of the panels (39, 63, 74). System (10) includes an e-beam bombardment chamber (16) for preconditioning the anode glass panels, and a heating chamber (18) for fusing anode glass panels to cathode glass panels. Different levels of vacuum may be established in different chambers.
摘要翻译：一种玻璃加热和密封系统（10,30,60）以及用于制造平板显示器的方法，包括在它们之间具有真空室的阳极和阴极玻璃面板包括多个真空室（12,14,16,18,20， 32,34,36,38,61,76），用于加工玻璃面板（39,63,74）。在室（12,14,16,18,20,32,34,36,38,61,76）之间转移玻璃面板（39,63,74）由转印机构（24,42,68,72 ）位于通常连接到其它室的中央真空室（22,40,70）内。系统（10,30,60）可以包括用于快速并均匀加热面板（39,63,74）的快速热处理（RTP）室（14,34,38,76）。系统（10）包括用于预处理阳极玻璃面板的电子束轰击室（16）和用于将阳极玻璃面板熔合到阴极玻璃面板的加热室（18）。可以在不同的室中建立不同程度的真空。

6. 发明授权

US4816098A Apparatus for transferring workpieces 失效
标题翻译：用于传送工件的设备
公开(公告)号：US4816098A
公开(公告)日：1989-03-28
申请号：US73940
申请日：1987-07-16
申请人： Cecil J. Davis , Robert T. Matthews
发明人： Cecil J. Davis , Robert T. Matthews
IPC分类号： H01L21/677 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： H01L21/67748 , H01L21/67751 , Y10S414/139
摘要： A processing apparatus and method for transferring wafers or flat workpieces between a controlled vacuum load lock and a non-vacuum transfer mechanism. The apparatus is adapted to receive the wafers in a carrier under vacuum. The load lock chamber of the apparatus is then pumped down and purged, if desired. Next the chamber is brought to ambient pressure and an opening to the chamber is created. A transfer arm within the chamber transfers the wafers from the carrier through the opening and to a platform or an non-vacuum carrier. The wafers are received by the arm outside the chamber and transferred through the opening and placed into the vacuum carrier within the chamber. The opening into the chamber is closed and a vacuum is generated. The chamber can then be purged, if desired and the vacuum carrier sealed. The carrier can now be removed from the load lock chamber.
摘要翻译：一种用于在受控真空负载锁和非真空转移机构之间转移晶片或平坦工件的处理设备和方法。该装置适于在真空下在载体中接收晶片。如果需要，装置的装载锁定室然后被泵送并清除。接下来，使腔室达到环境压力并且产生到腔室的开口。腔室内的转移臂将晶片从载体通过开口转移到平台或非真空载体。晶片由臂外部的臂接收并通过开口传送并放置在腔室内的真空载体中。进入腔室的开口关闭并产生真空。然后，如果需要，可以将腔室吹扫，并将真空载体密封。载体现在可以从装载锁定室移除。

7. 发明授权

US5248636A Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation 失效
标题翻译：使用远程产生的等离子体和原位等离子体与UV照射的处理方法
公开(公告)号：US5248636A
公开(公告)日：1993-09-28
申请号：US892460
申请日：1992-06-02
申请人： Cecil J. Davis , Rhett B. Jucha , Joseph D. Luttmer , Rudy L. York , Lee M. Loewenstein , Robert T. Matthews , Randall C. Hildenbrand
发明人： Cecil J. Davis , Rhett B. Jucha , Joseph D. Luttmer , Rudy L. York , Lee M. Loewenstein , Robert T. Matthews , Randall C. Hildenbrand
IPC分类号： C23C16/48 , C23C16/517 , C23C16/54
CPC分类号： C23C16/54 , C23C16/482 , C23C16/517
摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, delete but this transparent window is not made thick enough to act as a full vacuum seal.
摘要翻译：一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击其具有基本上邻接晶片表面的暗空间。原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。通过在真空室内而远离晶片表面的等离子体产生照射正在处理的晶片的表面的紫外光。设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。紫外等离子体空间与晶片表面附近的处理空间之间有效地包含透明隔离器，使得紫外等离子体可以在与晶片表面附近的真空度稍微不同的真空度下进行操作，但是该透明窗口未被制成足够厚以充当真空密封。

8. 发明授权

US4886570A Processing apparatus and method 失效
标题翻译：处理装置和方法
公开(公告)号：US4886570A
公开(公告)日：1989-12-12
申请号：US282993
申请日：1988-12-02
申请人： Cecil J. Davis , Robert T. Matthews , Lee M. Loewenstein , Rhett B. Jucha , Randall C. Hildenbrand , John I. Jones
发明人： Cecil J. Davis , Robert T. Matthews , Lee M. Loewenstein , Rhett B. Jucha , Randall C. Hildenbrand , John I. Jones
IPC分类号： C23C16/48 , C23C16/517 , C23C16/52 , C23C16/54
CPC分类号： C23C16/482 , C23C16/517 , C23C16/52 , C23C16/54
摘要： A process module having remote plasma and in situ plasma generators, a source of ultraviolet, and a radiant heater, which represent four separate energy sources. The four sources can be used singly or in any combination and can be separately controllable.
摘要翻译：具有远程等离子体和原位等离子体发生器，紫外线源和辐射加热器的处理模块，其表示四个单独的能量源。四种来源可以单独使用，也可以任意组合使用，可单独使用。

9. 发明授权

US4836905A Processing apparatus 失效
标题翻译：处理装置
公开(公告)号：US4836905A
公开(公告)日：1989-06-06
申请号：US75018
申请日：1987-07-16
申请人： Cecil J. Davis , Joseph V. Abernathy , Robert T. Matthews , Randall C. Hildenbrand , Bruce Simpson , James G. Bohlman , Lee M. Loewenstein , John I. Jones
发明人： Cecil J. Davis , Joseph V. Abernathy , Robert T. Matthews , Randall C. Hildenbrand , Bruce Simpson , James G. Bohlman , Lee M. Loewenstein , John I. Jones
IPC分类号： C23C14/56 , C23F4/00 , H01L21/00 , H01L21/677
CPC分类号： H01L21/67748 , C23C14/50 , C23C14/568 , C23F4/00 , H01L21/67115 , H01L21/67751 , Y10S414/136 , Y10S414/137
摘要： A processing apparatus and method which permits sputter deposition and which is compatible with a vacuum processing system wherein the wafers are largely transferred and processed in the face down position. This includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. While the wafer is in the more nearly vertical position, sputter deposition may be performed. In situ or remote plasma capability is usefully provided in the bottom part of the chamber, so that a dry deglaze or cleanup step can be performed while the wafer is in its substantially horizontal position, followed by a sputter deposition after the wafer has been moved to its more nearly vertical position.
摘要翻译：允许溅射沉积并与真空处理系统相容的处理装置和方法，其中晶片在面朝下的位置被大量地转移和处理。这包括另外的晶片运动，其中在将晶片面朝下放置之后，可将其固定在基座上的位置，基座从其近似水平的位置旋转到更接近垂直的位置。当晶片处于更接近垂直的位置时，可以进行溅射沉积。原位或远程等离子体能力有效地提供在腔室的底部，从而可以在晶片处于其基本水平的位置时进行干燥的消光或清洁步骤，接着在晶片移动到它更接近垂直的位置。

10. 发明授权

US4872938A Processing apparatus 失效
标题翻译：处理装置
公开(公告)号：US4872938A
公开(公告)日：1989-10-10
申请号：US188128
申请日：1988-04-25
申请人： Cecil J. Davis , Joseph V. Abernathy , Robert T. Matthews , Randall C. Hildenbrand , Bruce Simpson , John I. Jones , Lee M. Loewenstein , James G. Bohlman
发明人： Cecil J. Davis , Joseph V. Abernathy , Robert T. Matthews , Randall C. Hildenbrand , Bruce Simpson , John I. Jones , Lee M. Loewenstein , James G. Bohlman
IPC分类号： H01L21/00 , H01L21/677
CPC分类号： H01L21/67748 , H01L21/67115 , H01L21/67751 , H01L21/67796
摘要： A process module which is compatible with a system using vacuum wafer transport in which wafers are generally transported and processed in a face down position under vacuum, and which also includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. In the more nearly vertical position, the wafer can be processed by a top process module, which may be, e.g., a sputter system, an implanter, or an inspection module. Another process module is included in the bottom part of the chamber, so that the wafer can be processed by the lower process module while in its substantially horizontal position and processed by the upper process module when it is in its more nearly vertical position. This is especially advantageous when the lower process module is a plasma cleanup module and the top module is a deposition module.
摘要翻译：一种与使用真空晶片传输的系统兼容的处理模块，其中晶片通常在真空下以正面朝下的位置运输和处理，并且还包括另外的晶片移动，其中在晶片已经朝下放置之后，可以将其固定在基座上的位置，基座从其大致水平位置旋转到更接近垂直的位置。在更接近垂直的位置，晶片可以由顶部工艺模块来处理，顶部工艺模块可以是例如溅射系统，注入机或检查模块。另一个处理模块被包括在腔室的底部，使得晶片在处于其基本上水平的位置时可被下部处理模块处理，并且当其处于更接近垂直的位置时由上部处理模块处理。当下部工艺模块是等离子体清理模块并且顶部模块是沉积模块时，这是特别有利的。

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