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    • 11. 发明申请
    • HIGH-VOLTAGE GAS CLUSTER ION BEAM (GCIB) PROCESSING SYSTEM
    • 高压气体离子束(GCIB)处理系统
    • US20110240602A1
    • 2011-10-06
    • US12750052
    • 2010-03-30
    • Robert K. BeckerMatthew C. GwinnKenneth P. Regan
    • Robert K. BeckerMatthew C. GwinnKenneth P. Regan
    • C23F1/02C23C14/46
    • H01J37/317H01J37/08H01J37/241H01J2237/038H01J2237/0812
    • The invention includes a high-voltage gas cluster ion beam (GCIB) processing system for treating a workpiece using a gas cluster ion beam. The high-voltage GCIB processing system includes a high-voltage (HV) source system that includes a high-voltage (HV) source chamber having a high-voltage (HV) nozzle subassembly, a nozzle element, and a high-voltage (HV) skimmer subassembly therein. The high-voltage gas cluster ion beam (GCIB) processing system includes a high-voltage (HV) power supply coupled to the HV nozzle subassembly and the HV skimmer subassembly. A high-voltage (HV) ionization chamber can be coupled to the HV source chamber and can include an ionizer coupled to the chamber wall by an isolation structure. In addition, a grounded GCIB processing chamber can be coupled to the HV ionization chamber by an isolation structure and can include a scanable workpiece holder.
    • 本发明包括使用气体团簇离子束处理工件的高压气体团簇离子束(GCIB)处理系统。 高压GCIB处理系统包括高压(HV)源系统,其包括具有高压(HV)喷嘴子组件,喷嘴元件和高压(HV)的高压(HV)源室 )撇渣器组件。 高压气体簇离子束(GCIB)处理系统包括耦合到HV喷嘴子组件和HV分离器子组件的高压(HV)电源。 高压(HV)电离室可以耦合到HV源室,并且可以包括通过隔离结构耦合到室壁的离子发生器。 此外,接地的GCIB处理室可以通过隔离结构耦合到HV电离室,并且可以包括可扫描工件保持器。
    • 12. 发明授权
    • Gas cluster ion beam smoother apparatus
    • 气体束离子束平滑器
    • US06486478B1
    • 2002-11-26
    • US09731688
    • 2000-12-06
    • Bruce K. LibbyIsao YamadaJames A. GreerLester G. CrawfordJames G. BachandMatthew C. GwinnRichard P. Torti
    • Bruce K. LibbyIsao YamadaJames A. GreerLester G. CrawfordJames G. BachandMatthew C. GwinnRichard P. Torti
    • A61N500
    • H01J37/3053H01J2237/0812
    • An apparatus for smoothing a surface of a substrate includes an ionizer to form gas cluster particles; a power supply to accelerate the gas cluster particles; a triode/Einzel lens combination assembly to focus the accelerated gas cluster particles; a permanent magnet beam filter; scan plates to irradiate the filtered accelerated gas cluster particles onto a surface of a workpiece situated in a reduced pressure atmosphere chamber; and a substrate loading/unloading mechanism to load and unload the workpiece. The ionizer includes an alignment device wherein the alignment device includes a X/Y translation element and an angular translation element. The substrate loading/unloading mechanism provides a workpiece from a plurality of workpieces onto a holder positioned at a first position within the reduced pressure atmosphere chamber, the first position being substantially parallel to a central axis of a flow of the filtered accelerated gas cluster particles. The substrate loading/unloading mechanism also moves the holder with a workpiece thereon to a second position, the second position being substantially perpendicular to the first position and the central axis of a flow of the filtered accelerated gas cluster particles.
    • 用于平滑基板的表面的设备包括:离子发生器,用于形成气体团簇颗粒; 用于加速气体团簇颗粒的电源; 三极管/ Einzel透镜组合组件,用于聚焦加速气体团簇颗粒; 永久磁铁过滤器; 扫描板将过滤的加速气体团簇颗粒照射到位于减压气氛室中的工件的表面上; 以及用于加载和卸载工件的基板装载/卸载机构。 电离器包括对准装置,其中对准装置包括X / Y平移元件和角度平移元件。 衬底装载/卸载机构将工件从多个工件提供到位于减压气氛室内的第一位置的保持器上,第一位置基本上平行于过滤的加速气体团簇颗粒的流动的中心轴线。 衬底装载/卸载机构还将其上的工件的保持器移动到第二位置,第二位置基本上垂直于过滤的加速气体团簇颗粒的流动的第一位置和中心轴线。
    • 15. 发明授权
    • Method of implanting low doses of ions into a substrate
    • 将低剂量离子注入底物的方法
    • US5962858A
    • 1999-10-05
    • US891415
    • 1997-07-10
    • Matthew C. Gwinn
    • Matthew C. Gwinn
    • C23C14/48H01J37/317H01L21/265
    • C23C14/48H01J37/3171H01J2237/08
    • The present invention provides for an ion implantation system that employs an ion source for ionizing and implanting into a substrate a noble diluent gas and a particular dopant gas. The noble diluent gas of the present invention preferably does not react with the dopant gas, or with dopant residue which coats the walls of the ionization chamber of the ion source, thus allowing the ion source to be used for accurate, stable low dose implants. Additionally, the noble diluent gas does not introduce conductivity altering ions, or impurities, into the substrate S. Consequently, the dosage of the dopant ions implanted into the substrate can be precisely controlled, especially in low dose applications.
    • 本发明提供了一种离子注入系统,其使用离子源将电离和注入衬底中的稀有稀释气体和特定掺杂气体。 本发明的稀释稀释气体优选不与掺杂剂气体反应,或者与掺杂离子源的离子化室的壁的掺杂剂残留物反应,从而允许离子源用于精确,稳定的低剂量植入物。 此外,惰性稀释气体不会将导电性改变离子或杂质引入衬底S.因此,可以精确地控制注入到衬底中的掺杂剂离子的剂量,特别是在低剂量应用中。