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1. 发明授权

US07608843B2 Method and apparatus for scanning a workpiece through an ion beam 有权
标题翻译：用于通过离子束扫描工件的方法和装置
公开(公告)号：US07608843B2
公开(公告)日：2009-10-27
申请号：US11565267
申请日：2006-11-30
申请人： Avrum Freytsis , Matthew C. Gwinn , Eric R. Harrington
发明人： Avrum Freytsis , Matthew C. Gwinn , Eric R. Harrington
IPC分类号： H01J37/08
CPC分类号： H01L21/68764 , H01J2237/20228 , H01J2237/31701 , H01L21/67069
摘要： A method and apparatus 300 for better controlling scanning of a workpiece 330 through an ion beam path 306 provide for mounting a workpiece 330 on an elongated member, partially repetitively rotating the elongated member 500 around a point of rotation 368 to make repetitive scans of the workpiece 330 along and arcuate path 504 and bending the elongated member 500 at a joint 322 to move the one and out of the ion beam path 306 to facilitate attachment and removal of individual workpieces 330. A motor 315 used for the rotating may be suspended within a partial vacuum enclosure 304 against gravity for raising and lowering the elongated member and 500 a workpiece 306 for linear vertical scanning.
摘要翻译：用于更好地控制通过离子束路径306的工件330的扫描的方法和装置300提供将工件330安装在细长构件上，部分地重复地使细长构件500围绕旋转点368旋转以对工件进行重复扫描 330和弓形路径504，并且在接头322处将细长构件500弯曲以将离子束路径306中的一个移出并离开离子束路径306，以便于各个工件330的附接和移除。用于旋转的马达315可以悬挂在部分真空外壳304反对用于升高和降低细长构件的重力，以及500个用于线性垂直扫描的工件306。

2. 发明申请

US20100193708A1 METHOD OF FORMING TRENCH ISOLATION USING A MULTIPLE NOZZLE GAS CLUSTER ION BEAM PROCESS 有权
标题翻译：使用多个喷嘴气体聚集体离子束工艺形成热分离的方法
公开(公告)号：US20100193708A1
公开(公告)日：2010-08-05
申请号：US12428973
申请日：2009-04-23
申请人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
发明人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
IPC分类号： A61N5/00
CPC分类号： H01J37/08 , H01J37/317 , H01J2237/061 , H01J2237/0812 , H01J2237/0825 , H01J2237/0827
摘要： Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.
摘要翻译：公开了使用多喷嘴和撇渣器组件在基底上生长，改性，沉积或掺杂层的操作方法，用于在气体簇离子束（GCIB）系统中引入工艺气体混合物或多种工艺气体混合物。还公开了一种在衬底上形成浅沟槽隔离（STI）结构的方法，例如使用具有两个单独气体供应的多喷嘴系统的SiO 2 STI结构，例如提供含硅气体和含氧气体，含气。

3. 发明授权

US08304033B2 Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles 有权
标题翻译：用多个气体喷嘴形成的气体簇离子束照射基板的方法
公开(公告)号：US08304033B2
公开(公告)日：2012-11-06
申请号：US12428973
申请日：2009-04-23
申请人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
发明人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
IPC分类号： C23C14/10 , C23C14/48 , C23C14/14 , B05D3/06 , H01L21/263 , C23C14/08 , H01L21/423 , H01L21/425 , H01L21/265
CPC分类号： H01J37/08 , H01J37/317 , H01J2237/061 , H01J2237/0812 , H01J2237/0825 , H01J2237/0827
摘要： Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.
摘要翻译：公开了使用多喷嘴和撇渣器组件在基底上生长，改性，沉积或掺杂层的操作方法，用于在气体簇离子束（GCIB）系统中引入工艺气体混合物或多种工艺气体混合物。还公开了一种在衬底上形成浅沟槽隔离（STI）结构的方法，例如使用具有两个单独气体供应的多喷嘴系统的SiO 2 STI结构，例如提供含硅气体和含氧气体，含气。

4. 发明授权

US08981322B2 Multiple nozzle gas cluster ion beam system 有权
标题翻译：多喷嘴气体簇离子束系统
公开(公告)号：US08981322B2
公开(公告)日：2015-03-17
申请号：US12428945
申请日：2009-04-23
申请人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
发明人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
IPC分类号： G21K5/04 , H01J37/08 , H01J37/317
CPC分类号： H01J37/08 , H01J37/317 , H01J2237/061 , H01J2237/0812 , H01J2237/0825 , H01J2237/0827
摘要： Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer.
摘要翻译：公开了一种用于在气体簇离子束（GCIB）系统中引入过程气体混合物或多种工艺气体混合物的多喷嘴和撇渣器组件，以及相关的操作方法，用于生长，修饰，沉积或掺杂层底物。多个喷嘴和撇浮器组件包括至少两个彼此非常接近地布置的喷嘴，其至少部分地将从其发射的气体束束至少部分地聚结成单个气体束束和/或成角度以将每个射束朝着单个交叉点收敛以形成一组的交叉气体束束，并将单个和/或相交的气体束束引导到气体分离器中。

5. 发明授权

US08791430B2 Scanner for GCIB system 有权
标题翻译： GCIB系统扫描仪
公开(公告)号：US08791430B2
公开(公告)日：2014-07-29
申请号：US13411329
申请日：2012-03-02
申请人： Matthew C. Gwinn , Avrum Freytsis , Jay R. Wallace
发明人： Matthew C. Gwinn , Avrum Freytsis , Jay R. Wallace
IPC分类号： B01J19/12
CPC分类号： H01J37/20 , H01J37/317 , H01J2237/20228 , H01J2237/20235 , H01J2237/20278
摘要： Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.
摘要翻译：公开了一种用于通过气体簇离子束（GCIB）或任何其它类型的离子束扫描衬底或其它工件的装置，系统和方法。工件扫描装置被配置为接收和保持用于GCIB照射的基板，并且通过两次运动通过GCIB在两个方向上进行扫描：往复式快速扫描运动和慢扫描运动。使用伺服电动机和皮带驱动系统来驱动缓慢扫描运动，所述皮带驱动系统被配置为降低工件扫描装置的故障率。

6. 发明授权

US08097860B2 Multiple nozzle gas cluster ion beam processing system and method of operating 有权
标题翻译：多喷嘴气体离子束处理系统及其操作方法
公开(公告)号：US08097860B2
公开(公告)日：2012-01-17
申请号：US12732818
申请日：2010-03-26
申请人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
发明人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
IPC分类号： H01J37/317 , H01J49/10 , H01J27/02
CPC分类号： H01J37/08 , C23C14/221 , C23C16/513 , H01J37/305 , H01J37/317 , H01J2237/0812 , H01J2237/0822 , H01J2237/0825 , H01J2237/0827
摘要： A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB.
摘要翻译：描述了使用多个喷嘴形成和发射至少一个GCIB的气体簇离子束（GCIB）处理系统及其操作方法。 GCIB处理系统可以被配置为处理衬底，包括但不限于掺杂，生长，沉积，蚀刻，平滑化，非晶化或修饰其上的层。此外，可以操作GCIB处理系统以产生第一GCIB和第二GCIB，并且与第一GCIB和第二GCIB同时和/或顺序地照射基板。

7. 发明申请

US20100193701A1 MULTIPLE NOZZLE GAS CLUSTER ION BEAM SYSTEM 有权
标题翻译：多喷嘴气体离子束系统
公开(公告)号：US20100193701A1
公开(公告)日：2010-08-05
申请号：US12428945
申请日：2009-04-23
申请人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
发明人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
IPC分类号： H01J27/00 , G21K1/00
CPC分类号： H01J37/08 , H01J37/317 , H01J2237/061 , H01J2237/0812 , H01J2237/0825 , H01J2237/0827
摘要： Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer.
摘要翻译：公开了一种用于在气体簇离子束（GCIB）系统中引入过程气体混合物或多种工艺气体混合物的多喷嘴和撇渣器组件，以及相关的操作方法，用于生长，修饰，沉积或掺杂层底物。多个喷嘴和撇浮器组件包括至少两个彼此非常接近地布置的喷嘴，其至少部分地将从其发射的气体束束至少部分地聚结成单个气体束束和/或成角度以将每个射束朝着单个交叉点收敛以形成一组的交叉气体束束，并将单个和/或相交的气体束束引导到气体分离器中。

8. 发明申请

US20100193472A1 MULTIPLE NOZZLE GAS CLUSTER ION BEAM PROCESSING SYSTEM AND METHOD OF OPERATING 有权
标题翻译：多喷嘴气体离子束加工系统及其操作方法
公开(公告)号：US20100193472A1
公开(公告)日：2010-08-05
申请号：US12732818
申请日：2010-03-26
申请人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
发明人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
IPC分类号： H01J37/317 , H01J37/02 , H01J37/305 , C23F1/02 , C23C14/48
CPC分类号： H01J37/08 , C23C14/221 , C23C16/513 , H01J37/305 , H01J37/317 , H01J2237/0812 , H01J2237/0822 , H01J2237/0825 , H01J2237/0827
摘要： A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB.
摘要翻译：描述了使用多个喷嘴形成和发射至少一个GCIB的气体簇离子束（GCIB）处理系统及其操作方法。 GCIB处理系统可以被配置为处理衬底，包括但不限于掺杂，生长，沉积，蚀刻，平滑化，非晶化或修饰其上的层。此外，可以操作GCIB处理系统以产生第一GCIB和第二GCIB，并且与第一GCIB和第二GCIB同时和/或顺序地照射基板。

9. 发明申请

US20090140165A1 Method and apparatus for controlling a gas cluster ion beam formed from a gas mixture 有权
标题翻译：用于控制由气体混合物形成的气体团簇离子束的方法和装置
公开(公告)号：US20090140165A1
公开(公告)日：2009-06-04
申请号：US11950128
申请日：2007-12-04
申请人： John J. Hautala , Matthew C. Gwinn , Jerald P. Dykstra
发明人： John J. Hautala , Matthew C. Gwinn , Jerald P. Dykstra
IPC分类号： G21K5/00 , G21K5/08
CPC分类号： H01J37/304 , H01J27/026 , H01J37/3053 , H01J2237/006 , H01J2237/0812 , H01J2237/24507 , H01J2237/30455 , H01L21/26566
摘要： Methods and apparatus for controlling a gas cluster ion beam formed from a plurality of process gases in a gas mixture. The methods and apparatus involve measuring gas analysis data relating to the composition of the gas mixture and modifying the irradiation of the workpiece in response to the detected parameter. The gas analysis data can be derived from samples of the composition of the gas mixture flowing from a gas source to the gas cluster ion beam apparatus or samples of the residual gases inside the vacuum vessel of the gas cluster ion beam apparatus.
摘要翻译：用于控制由气体混合物中的多种处理气体形成的气体簇离子束的方法和装置。所述方法和装置包括测量与气体混合物的组成相关的气体分析数据，并响应于检测到的参数来修改工件的照射。气体分析数据可以从气体源到气体簇离子束装置的气体混合物的组成的样本或气体团簇离子束装置的真空容器内的残留气体的样品的样品得到。

10. 发明申请

US20110240602A1 HIGH-VOLTAGE GAS CLUSTER ION BEAM (GCIB) PROCESSING SYSTEM 审中-公开
标题翻译：高压气体离子束（GCIB）处理系统
公开(公告)号：US20110240602A1
公开(公告)日：2011-10-06
申请号：US12750052
申请日：2010-03-30
申请人： Robert K. Becker , Matthew C. Gwinn , Kenneth P. Regan
发明人： Robert K. Becker , Matthew C. Gwinn , Kenneth P. Regan
IPC分类号： C23F1/02 , C23C14/46
CPC分类号： H01J37/317 , H01J37/08 , H01J37/241 , H01J2237/038 , H01J2237/0812
摘要： The invention includes a high-voltage gas cluster ion beam (GCIB) processing system for treating a workpiece using a gas cluster ion beam. The high-voltage GCIB processing system includes a high-voltage (HV) source system that includes a high-voltage (HV) source chamber having a high-voltage (HV) nozzle subassembly, a nozzle element, and a high-voltage (HV) skimmer subassembly therein. The high-voltage gas cluster ion beam (GCIB) processing system includes a high-voltage (HV) power supply coupled to the HV nozzle subassembly and the HV skimmer subassembly. A high-voltage (HV) ionization chamber can be coupled to the HV source chamber and can include an ionizer coupled to the chamber wall by an isolation structure. In addition, a grounded GCIB processing chamber can be coupled to the HV ionization chamber by an isolation structure and can include a scanable workpiece holder.
摘要翻译：本发明包括使用气体团簇离子束处理工件的高压气体团簇离子束（GCIB）处理系统。高压GCIB处理系统包括高压（HV）源系统，其包括具有高压（HV）喷嘴子组件，喷嘴元件和高压（HV）的高压（HV）源室）撇渣器组件。高压气体簇离子束（GCIB）处理系统包括耦合到HV喷嘴子组件和HV分离器子组件的高压（HV）电源。高压（HV）电离室可以耦合到HV源室，并且可以包括通过隔离结构耦合到室壁的离子发生器。此外，接地的GCIB处理室可以通过隔离结构耦合到HV电离室，并且可以包括可扫描工件保持器。

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