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11. 发明授权

US08691665B2 Method for producing bonded wafer 有权
标题翻译：接合晶片的制造方法
公开(公告)号：US08691665B2
公开(公告)日：2014-04-08
申请号：US13514414
申请日：2010-11-18
申请人： Satoshi Oka , Hiroji Aga , Masahiro Kato , Nobuhiko Noto
发明人： Satoshi Oka , Hiroji Aga , Masahiro Kato , Nobuhiko Noto
IPC分类号： H01L21/30 , H01L21/46 , H01L21/00
CPC分类号： H01L21/3247 , H01L21/302 , H01L21/3065 , H01L21/76254
摘要： The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method.
摘要翻译：本发明涉及一种接合晶片的制造方法，其特征在于，在含有氢或氯化氢的气氛中，对由离子注入脱层法制成的接合晶片进行使薄膜表面平坦化的热处理，其中预先在其上放置接合晶片的基座的表面，在平坦化热处理时使用的基座被涂覆有硅膜。结果，提供了一种接合晶片的制造方法，即使在将粘合晶片的薄膜的表面平坦化的热处理后，也可以获得具有良好的膜厚均匀性的薄膜的接合晶片的方法在离子注入分层方法中进行分层。

12. 发明申请

US20110223740A1 METHOD FOR MANUFACTURING SOI WAFER 有权
标题翻译： SOI WAFER制造方法
公开(公告)号：US20110223740A1
公开(公告)日：2011-09-15
申请号：US13129538
申请日：2009-11-11
申请人： Tohru Ishizuka , Norihiro Kobayashi , Hiroji Aga , Nobuhiko Noto
发明人： Tohru Ishizuka , Norihiro Kobayashi , Hiroji Aga , Nobuhiko Noto
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/84 , H01L22/12 , H01L22/20 , H01L29/78603
摘要： A method for manufacturing an SOI wafer having a buried oxide film with a predetermined thickness including performing a heat treatment for reducing a thickness of the buried oxide film on an SOI wafer material having an SOI layer formed on the buried oxide film, wherein a thickness of the SOI layer of the SOI wafer material to be subjected to the heat treatment for reducing the thickness of the buried oxide film is calculated on the basis of a ratio of the thickness of the buried oxide film to be reduced by the heat treatment with respect to a permissible value of an amount of change in an in-plane range of the buried oxide film, the change being caused by the heat treatment, and the SOI wafer material obtained by thinning the thickness of the bond wafer so as to have the calculated thickness of the SOI layer is subjected to the heat treatment for reducing the thickness of the buried oxide film.
摘要翻译：一种制造具有预定厚度的具有预定厚度的掩埋氧化物膜的SOI晶片的方法，包括：在掩埋氧化膜上形成SOI层的SOI晶片材料上进行用于减小掩埋氧化膜厚度的热处理，其中，基于通过热处理而减少的掩埋氧化膜的厚度的比率，计算要进行用于减小掩埋氧化膜的厚度的热处理的SOI晶片材料的SOI层相对于掩埋氧化膜的面内范围的变化量的允许值，由热处理引起的变化，以及通过使接合晶片的厚度变薄而获得的SOI晶片材料，使得具有计算出的厚度对SOI层进行热处理，以减小掩埋氧化膜的厚度。

13. 发明授权

US07838388B2 Method for producing SOI substrate 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US07838388B2
公开(公告)日：2010-11-23
申请号：US12379938
申请日：2009-03-04
申请人： Satoshi Oka , Nobuhiko Noto
发明人： Satoshi Oka , Nobuhiko Noto
IPC分类号： H01L21/76
CPC分类号： H01L21/76254 , H01L21/3065
摘要： Provided is a method for producing an SOI substrate having a thick-film SOI layer, in which an ion-implanted layer is formed by implanting at least one kind of ion of hydrogen ion and a rare gas ion into a surface of a bond wafer, an SOI substrate having an SOI layer is produced by, after the ion-implanted surface of the bond wafer and a surface of a base wafer are bonded together via an oxide film, delaminating the bond wafer along the ion-implanted layer, heat treatment is performed on the SOI substrate having the SOI layer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, and, after the surface of the SOI layer is polished by CMP, a silicon epitaxial layer is grown on the SOI layer of the SOI substrate.
摘要翻译：提供一种制造具有厚膜SOI层的SOI衬底的方法，其中通过将至少一种氢离子和稀有气体离子的离子注入到接合晶片的表面中形成离子注入层，通过在接合晶片的离子注入表面和基底晶片的表面经由氧化物膜接合在一起之后，沿着离子注入层使接合晶片分层，制造具有SOI层的SOI衬底，热处理为在含有氢或含有氯化氢气体的气氛的还原气氛中在具有SOI层的SOI衬底上进行SOI SOI层的SOI表面的SOI外延生长后，在SOI的SOI层上生长硅外延层基质。

14. 发明授权

US07776719B2 Method for manufacturing bonded wafer 有权
标题翻译：贴合晶圆的制造方法
公开(公告)号：US07776719B2
公开(公告)日：2010-08-17
申请号：US12227436
申请日：2007-05-14
申请人： Yasutsugu Soeta , Nobuhiko Noto
发明人： Yasutsugu Soeta , Nobuhiko Noto
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01L21/3065
摘要： A method is provided for manufacturing a bonded wafer by an ion implantation delamination method, including bonding a base wafer with a bond wafer having a microbubble layer formed by ion implantation, delaminating the wafers along the micro bubble layer as a boundary, and removing a periphery of a thin film formed on the base wafer by the delamination. The removal step is performed by dry etching that supplies an etching gas from a nozzle, and the dry etching is performed by adjusting an inner diameter of the gas-jetting port of the nozzle, and a distance between the gas-jetting port of the nozzle and a surface of the thin film.
摘要翻译：提供了一种用于通过离子注入分层方法制造接合晶片的方法，包括将基底晶片与具有通过离子注入形成的微泡层的接合晶片接合，沿着微气泡层将晶片分层作为边界，以及去除外围通过分层在基底晶片上形成的薄膜。通过从喷嘴提供蚀刻气体的干蚀刻进行去除步骤，并且通过调节喷嘴的气体喷射口的内径和喷嘴的喷气口之间的距离来进行干法蚀刻和薄膜的表面。

15. 发明申请

US20100132205A1 METHOD FOR MEASURING ROTATION ANGLE OF BONDED WAFER 有权
标题翻译：用于测量粘结角的旋转角的方法
公开(公告)号：US20100132205A1
公开(公告)日：2010-06-03
申请号：US12452070
申请日：2008-07-03
申请人： Norihiro Kobayashi , Tohru Ishizuka , Nobuhiko Noto
发明人： Norihiro Kobayashi , Tohru Ishizuka , Nobuhiko Noto
IPC分类号： G01B5/24
CPC分类号： H01L21/76251 , H01L22/12 , H01L23/544 , H01L2223/54426 , H01L2223/54493 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a method for measuring a rotation angle of a bonded wafer, wherein a base wafer and a bond wafer each having a notch indicative of a crystal orientation formed at an outer edge thereof are bonded to each other at a desired rotation angle by utilizing the notches, a profile of the bond wafer having a reduced film thickness is observed with respect to a bonded wafer manufactured by reducing a film thickness of the bond wafer, a positional direction of the notch of the bond wafer seen from a center of the bonded wafer is calculated by utilizing the profile, an angle formed between the calculated positional direction of the notch of the bond wafer and a positional direction of the notch of the base wafer is calculated, and a rotation angle of the base wafer and the bond wafer is measured. As a result, the method for measuring a rotation angle of a bonded wafer that enables accurately and easily measuring the rotation angle of the notches of the base wafer and the bond wafer in a bonded wafer manufacturing line can be provided.
摘要翻译：本发明提供了一种用于测量接合晶片的旋转角度的方法，其中每个具有指示在其外边缘处形成的晶体取向的切口的基底晶片和接合晶片以期望的旋转角度彼此接合，利用缺口，观察到相对于通过降低接合晶片的膜厚而制造的接合晶片，从接合晶片的中心观察到的接合晶片的凹口的位置方向，观察到具有减小的膜厚度的接合晶片的轮廓通过利用轮廓来计算贴合晶片，计算出计算的接合晶片的凹口的位置方向与基底晶片的凹口的位置方向之间形成的角度，以及基底晶片和接合晶片的旋转角度被测量。结果，可以提供用于测量接合晶片的旋转角度的方法，其能够准确且容易地测量接合晶片制造线中的基底晶片和接合晶片的切口的旋转角度。

16. 发明申请

US20100112824A1 METHOD FOR FORMING SILICON OXIDE FILM OF SOI WAFER 有权
标题翻译：形成硅波形硅氧烷膜的方法
公开(公告)号：US20100112824A1
公开(公告)日：2010-05-06
申请号：US12450955
申请日：2008-04-25
申请人： Isao Yokokawa , Nobuhiko Noto , Shin-ichi Yamaguchi
发明人： Isao Yokokawa , Nobuhiko Noto , Shin-ichi Yamaguchi
IPC分类号： H01L21/316
CPC分类号： H01L21/324 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/7624
摘要： The invention is a method for forming a silicon oxide film of an SOI wafer, the method by which at least thermal oxidation treatment is performed (a process (A)) on an SOI wafer having an oxide film on the back surface and, after the thermal oxidation treatment, heat treatment is additionally performed (a process (B)) in a non-oxidizing atmosphere at a temperature higher than the temperature at which the thermal oxidation treatment was performed, whereby a silicon oxide film is formed on the front surface of an SOI layer. This provides a method for forming a silicon oxide film of an SOI wafer, the method that can prevent an SOI wafer from being warped after thermal oxidation treatment even when an SOI wafer having a thick oxide film on the back surface is used and a silicon oxide film for forming a device is formed by thermal oxidation on the front surface on the SOI layer side, and can reduce exposure failure and adsorption failure caused by warpage of the SOI wafer and enhance yields of device fabrication.
摘要翻译：本发明是一种用于形成SOI晶片的氧化硅膜的方法，至少在后表面具有氧化膜的SOI晶片上进行热氧化处理的方法（工艺（A）），在在非氧化性气氛中，在高于进行热氧化处理的温度的温度下，另外进行热处理（工序（B）），在氧化膜的表面上形成氧化硅膜 SOI层。这提供了一种用于形成SOI晶片的氧化硅膜的方法，即使在使用背面具有厚氧化膜的SOI晶片和氧化硅后，也可以防止SOI晶片在热氧化处理后翘曲的方法用于形成器件的膜通过在SOI层侧的前表面上的热氧化形成，并且可以减少由SOI晶片的翘曲引起的暴露失效和吸附失效，并提高器件制造的产量。

17. 发明申请

US20100112781A1 METHOD FOR MANUFACTURING SOI WAFER 有权
标题翻译： SOI WAFER制造方法
公开(公告)号：US20100112781A1
公开(公告)日：2010-05-06
申请号：US12450960
申请日：2008-04-16
申请人： Isao Yokokawa , Hiroshi Takeno , Nobuhiko Noto
发明人： Isao Yokokawa , Hiroshi Takeno , Nobuhiko Noto
IPC分类号： H01L21/762
CPC分类号： H01L21/76256
摘要： The present invention provides a method for manufacturing an SOI wafer, including: a step of preparing a base wafer consisting of a p+ silicon single crystal wafer and a bond wafer consisting of a silicon single crystal wafer containing a dopant at a lower concentration than that in the base wafer; a step of forming a silicon oxide film on an entire surface of the base wafer based on thermal oxidation; a step of bonding the bond wafer to the base wafer through the silicon oxide film; and a step of reducing a thickness of the bond wafer to form an SOI layer, wherein a step of forming a CVD insulator film on a surface on an opposite side of a bonding surface of the base wafer is provided before the thermal oxidation step for the base wafer. As a result, it is possible to provide the method for manufacturing an SOI wafer which can easily prevent the p-type dopant contained in the base wafer from outwardly diffusing from the surface on the opposite side of the bonding surface of the base wafer due to a high-temperature heat treatment, suppress this dopant from being mixed into the SOI layer, and reduce warpage.
摘要翻译：本发明提供一种制造SOI晶片的方法，包括：准备由p +硅单晶晶片构成的基底晶片和由含有掺杂剂的硅单晶晶片组成的接合晶片的步骤，其浓度低于基片; 基于热氧化在基底晶片的整个表面上形成氧化硅膜的步骤; 通过氧化硅膜将接合晶片接合到基底晶片的步骤; 以及减小接合晶片的厚度以形成SOI层的步骤，其中在所述基底晶片的接合表面的相反侧的表面上形成CVD绝缘膜的步骤在所述基底晶片的接合表面的热氧化步骤之前提供基片。结果，可以提供一种制造SOI晶片的方法，其可以容易地防止基底晶片中包含的p型掺杂物从基底晶片的接合表面的相对侧上的表面向外扩散，这是由于进行高温热处理，可以抑制该掺杂剂混入SOI层，从而降低翘曲。

18. 发明申请

US20090170285A1 Method for manufacturing bonded wafer 有权
标题翻译：贴合晶圆的制造方法
公开(公告)号：US20090170285A1
公开(公告)日：2009-07-02
申请号：US12227436
申请日：2007-05-14
申请人： Yasutsugu Soeta , Nobuhiko Noto
发明人： Yasutsugu Soeta , Nobuhiko Noto
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01L21/3065
摘要： The present invention provides a method for manufacturing a bonded wafer by an ion implantation delamination method, the method including at least the steps of bonding a base wafer with a bond wafer having a microbubble layer formed by ion implantation, delaminating the wafers along the micro bubble layer as a boundary, and removing a periphery of a thin film formed on the base wafer by the delamination step, wherein at least the thin-film periphery removal step after the delamination step is performed by dry etching that supplies an etching gas from a nozzle, and the dry etching is performed by adjusting an inner diameter of the gas-jetting port of the nozzle, and a distance between the gas-jetting port of the nozzle and a surface of the thin film. As a result of this, there is provided the method for manufacturing the bonded wafer, in which removal of the thin-film periphery can be easily performed and a removal width is also reproducibly obtained well in the thin-film periphery removal step, and degradation in quality of the thin film can be effectively prevented.
摘要翻译：本发明提供了一种通过离子注入分层方法制造接合晶片的方法，所述方法至少包括将基底晶片与具有通过离子注入形成的微泡层的接合晶片接合的步骤，沿着微泡分解晶片层，并且通过分层步骤除去形成在基底晶片上的薄膜的周边，其中至少在分层步骤之后的薄膜外周去除步骤通过从喷嘴提供蚀刻气体的干法蚀刻来进行并且通过调节喷嘴的气体喷射口的内径以及喷嘴的喷气口与薄膜的表面之间的距离来进行干法蚀刻。结果，提供了制造接合晶片的方法，其中可以容易地去除薄膜周边，并且在薄膜周边去除步骤中也可以很好地获得去除宽度，并且降解可以有效地防止薄膜的质量。

19. 发明授权

US07553685B2 Method of fabricating light-emitting device and light-emitting device 有权
标题翻译：制造发光器件和发光器件的方法
公开(公告)号：US07553685B2
公开(公告)日：2009-06-30
申请号：US10523636
申请日：2003-08-06
申请人： Nobuhiko Noto , Masato Yamada , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
发明人： Nobuhiko Noto , Masato Yamada , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , H01L33/30
摘要： A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers 8, 10. The light-emitting device 100 also has contact layers composed of In-containing GaAs, formed between the light-emitting layer section 24 and the ITO transparent electrode layers 8, 10, so as to contact with the ITO transparent electrode layers respectively. The contact layers 7, 9 are formed by annealing a stack 13 obtained by forming GaAs layers 7′, 9′ on the light-emitting layer section, and by forming the ITO transparent electrode layers 8, 10 so as to contact with the GaAs layers 7′, 9′, to thereby allow In to diffuse from the ITO transparent electrode layers 8, 10 into the GaAs layers 7′, 9′. This provides a method of fabricating a light-emitting device, in which the ITO transparent electrode layers as the light-emission drive electrodes are bonded as being underlain by the contact layers, to thereby reduce contact resistance of these electrodes, and to thereby make the contact layers less susceptible to difference in the lattice constants with those of the light-emitting layer section during the formation thereof.
摘要翻译：发光装置100具有用于向发光层部分24施加用于发光的驱动电压的ITO透明电极层8,10，并且被设计成从发光层部分24通过 ITO透明电极层8,10。发光装置100还具有形成在发光层部24和ITO透明电极层8,10之间的含有In的GaAs的接触层，以与ITO透明电极层8,10接触。 ITO透明电极层。接触层7,9通过在发光层部分上形成GaAs层7'，9'而获得的叠层13退火并通过形成ITO透明电极层8,10而与GaAs层接触而形成 7'，9'，从而允许In从ITO透明电极层8,10扩散到GaAs层7'，9'中。这提供了一种制造发光器件的方法，其中作为发光驱动电极的ITO透明电极层被接触层接合，从而降低这些电极的接触电阻，从而使接触层在其形成期间不太容易发生与发光层部分的晶格常数的差异。

20. 发明申请

US20070287269A1 Method For Producing Semiconductor Wafer 审中-公开
标题翻译：生产半导体晶圆的方法
公开(公告)号：US20070287269A1
公开(公告)日：2007-12-13
申请号：US11665362
申请日：2005-10-14
申请人： Isao Yokokawa , Nobuhiko Noto
发明人： Isao Yokokawa , Nobuhiko Noto
IPC分类号： H01L21/20
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L21/02532 , H01L21/0262 , H01L21/02664
摘要： The present invention is a method for producing a semiconductor wafer, comprising at least steps of: epitaxially growing a SiGe layer on a surface of a silicon single crystal wafer that is to be a bond wafer; implanting at least one kind of hydrogen ion and rare gas ion through the SiGe layer, so that an ion implanted layer is formed inside the bond wafer; closely contacting and bonding a surface of the SiGe layer and a surface of a base wafer through an insulator film; then performing delamination at the ion implanted layer, removing a Si layer in a delaminated layer transferred to a side of the base wafer by the delamination, so that the SiGe layer is exposed; and then subjecting the exposed SiGe layer to a heat treatment for enriching Ge under an oxidizing atmosphere and/or a heat treatment for relaxing lattice strain under a non-oxidizing atmosphere. Thereby, a method for producing a semiconductor wafer having a SiGe layer in which lattice relaxation is sufficiently performed and of which surface roughness is suppressed and of which crystallinity is good is provided.
摘要翻译：本发明是一种制造半导体晶片的方法，至少包括以下步骤：在作为接合晶片的硅单晶晶片的表面上外延生长SiGe层; 通过SiGe层注入至少一种氢离子和稀有气体离子，从而在接合晶片的内部形成离子注入层; 通过绝缘膜紧密接触和接合SiGe层的表面和基底晶片的表面; 然后在离子注入层进行分层，通过分层去除转移到基底晶片一侧的分层中的Si层，使得SiGe层露出; 然后对暴露的SiGe层进行热处理，以在氧化气氛下进行Ge的富集和/或热处理，以在非氧化气氛下缓和晶格应变。因此，提供一种具有SiGe层的半导体晶片的制造方法，其中充分进行晶格弛豫并且抑制表面粗糙度并且结晶度良好的SiGe层。

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