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1. 发明授权

US07985660B2 Method for manufacturing soi wafer 有权
标题翻译：制造硅片的方法
公开(公告)号：US07985660B2
公开(公告)日：2011-07-26
申请号：US12450960
申请日：2008-04-16
申请人： Isao Yokokawa , Hiroshi Takeno , Nobuhiko Noto
发明人： Isao Yokokawa , Hiroshi Takeno , Nobuhiko Noto
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76256
摘要： The present invention provides a method for manufacturing an SOI wafer, including: a step of preparing a base wafer consisting of a p+ silicon single crystal wafer and a bond wafer consisting of a silicon single crystal wafer containing a dopant at a lower concentration than that in the base wafer; a step of forming a silicon oxide film on an entire surface of the base wafer based on thermal oxidation; a step of bonding the bond wafer to the base wafer through the silicon oxide film; and a step of reducing a thickness of the bond wafer to form an SOI layer, wherein a step of forming a CVD insulator film on a surface on an opposite side of a bonding surface of the base wafer is provided before the thermal oxidation step for the base wafer. As a result, it is possible to provide the method for manufacturing an SOI wafer which can easily prevent the p-type dopant contained in the base wafer from outwardly diffusing from the surface on the opposite side of the bonding surface of the base wafer due to a high-temperature heat treatment, suppress this dopant from being mixed into the SOI layer, and reduce warpage.
摘要翻译：本发明提供一种制造SOI晶片的方法，包括：准备由p +硅单晶晶片构成的基底晶片和由含有掺杂剂的硅单晶晶片组成的接合晶片的步骤，其浓度低于基片; 基于热氧化在基底晶片的整个表面上形成氧化硅膜的步骤; 通过氧化硅膜将接合晶片接合到基底晶片的步骤; 以及减小接合晶片的厚度以形成SOI层的步骤，其中在所述基底晶片的接合表面的相反侧的表面上形成CVD绝缘膜的步骤在所述基底晶片的接合表面的热氧化步骤之前提供基片。结果，可以提供一种制造SOI晶片的方法，其可以容易地防止基底晶片中包含的p型掺杂物从基底晶片的接合表面的相对侧上的表面向外扩散，这是由于进行高温热处理，可以抑制该掺杂剂混入SOI层，从而降低翘曲。

2. 发明申请

US20100112781A1 METHOD FOR MANUFACTURING SOI WAFER 有权
标题翻译： SOI WAFER制造方法
公开(公告)号：US20100112781A1
公开(公告)日：2010-05-06
申请号：US12450960
申请日：2008-04-16
申请人： Isao Yokokawa , Hiroshi Takeno , Nobuhiko Noto
发明人： Isao Yokokawa , Hiroshi Takeno , Nobuhiko Noto
IPC分类号： H01L21/762
CPC分类号： H01L21/76256
摘要： The present invention provides a method for manufacturing an SOI wafer, including: a step of preparing a base wafer consisting of a p+ silicon single crystal wafer and a bond wafer consisting of a silicon single crystal wafer containing a dopant at a lower concentration than that in the base wafer; a step of forming a silicon oxide film on an entire surface of the base wafer based on thermal oxidation; a step of bonding the bond wafer to the base wafer through the silicon oxide film; and a step of reducing a thickness of the bond wafer to form an SOI layer, wherein a step of forming a CVD insulator film on a surface on an opposite side of a bonding surface of the base wafer is provided before the thermal oxidation step for the base wafer. As a result, it is possible to provide the method for manufacturing an SOI wafer which can easily prevent the p-type dopant contained in the base wafer from outwardly diffusing from the surface on the opposite side of the bonding surface of the base wafer due to a high-temperature heat treatment, suppress this dopant from being mixed into the SOI layer, and reduce warpage.
摘要翻译：本发明提供一种制造SOI晶片的方法，包括：准备由p +硅单晶晶片构成的基底晶片和由含有掺杂剂的硅单晶晶片组成的接合晶片的步骤，其浓度低于基片; 基于热氧化在基底晶片的整个表面上形成氧化硅膜的步骤; 通过氧化硅膜将接合晶片接合到基底晶片的步骤; 以及减小接合晶片的厚度以形成SOI层的步骤，其中在所述基底晶片的接合表面的相反侧的表面上形成CVD绝缘膜的步骤在所述基底晶片的接合表面的热氧化步骤之前提供基片。结果，可以提供一种制造SOI晶片的方法，其可以容易地防止基底晶片中包含的p型掺杂物从基底晶片的接合表面的相对侧上的表面向外扩散，这是由于进行高温热处理，可以抑制该掺杂剂混入SOI层，从而降低翘曲。

3. 发明授权

US08410573B2 SOI (silicon on insulator) structure semiconductor device and method of manufacturing the same 有权
标题翻译： SOI（绝缘体上硅）结构半导体器件及其制造方法
公开(公告)号：US08410573B2
公开(公告)日：2013-04-02
申请号：US12734240
申请日：2008-10-20
申请人： Hiroshi Ohtsuki , Mitsutaka Katada , Nobuhiko Noto , Hiroshi Takeno , Kazuhiko Yoshida
发明人： Hiroshi Ohtsuki , Mitsutaka Katada , Nobuhiko Noto , Hiroshi Takeno , Kazuhiko Yoshida
IPC分类号： H01L29/06
CPC分类号： H01L29/78609 , H01L21/26506 , H01L21/3221 , H01L21/3223 , H01L21/3226 , H01L21/76256 , H01L21/76264 , H01L21/84 , H01L27/1203 , H01L29/32 , H01L29/7849 , H01L29/78603
摘要： In a SOI structure semiconductor device using a SOI substrate, a lattice distortion layer is formed by implanting Ar ions into a silicon substrate as an active layer. The lattice distortion layer is capable of serving as a gettering site. The dose amount of Ar ions is adjusted in such a manner that tensile stress in the lattice distortion layer is equal to or greater than 11 MPa and equal to or less than 27 MPa. Thus, the lattice distortion layer can prevent occurrence of a leakage current while serving as the gettering site.
摘要翻译：在使用SOI衬底的SOI结构半导体器件中，通过将Ar离子注入作为有源层的硅衬底中形成晶格畸变层。晶格畸变层能够用作吸杂位点。调整Ar离子的剂量，使晶格变形层的拉伸应力为11MPa以上且27MPa以下。因此，晶格畸变层可以防止在作为吸杂位置时发生漏电流。

4. 发明申请

US20100264510A1 SOI (SILICON ON INSULATOR) STRUCTURE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： SOI（绝缘体硅）结构半导体器件及其制造方法
公开(公告)号：US20100264510A1
公开(公告)日：2010-10-21
申请号：US12734240
申请日：2008-10-20
申请人： Hiroshi Ohtsuki , Mitsutaka Katada , Nobuhiko Noto , Hiroshi Takeno , Kazuhiko Yoshida
发明人： Hiroshi Ohtsuki , Mitsutaka Katada , Nobuhiko Noto , Hiroshi Takeno , Kazuhiko Yoshida
IPC分类号： H01L29/06 , H01L21/306
CPC分类号： H01L29/78609 , H01L21/26506 , H01L21/3221 , H01L21/3223 , H01L21/3226 , H01L21/76256 , H01L21/76264 , H01L21/84 , H01L27/1203 , H01L29/32 , H01L29/7849 , H01L29/78603
摘要： In a SOI structure semiconductor device using a SOI substrate, a lattice distortion layer is formed by implanting Ar ions into a silicon substrate as an active layer. The lattice distortion layer is capable of serving as a gettering site. The dose amount of Ar ions is adjusted in such a manner that tensile stress in the lattice distortion layer is equal to or greater than 11 MPa and equal to or less than 27 MPa. Thus, the lattice distortion layer can prevent occurrence of a leakage current while serving as the gettering site.
摘要翻译：在使用SOI衬底的SOI结构半导体器件中，通过将Ar离子注入作为有源层的硅衬底中形成晶格畸变层。晶格畸变层能够用作吸杂位点。调整Ar离子的剂量，使晶格变形层的拉伸应力为11MPa以上且27MPa以下。因此，晶格畸变层可以防止在作为吸杂位置时发生漏电流。

5. 发明申请

US20100323502A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20100323502A1
公开(公告)日：2010-12-23
申请号：US12449347
申请日：2008-02-19
申请人： Hiroshi Takeno , Tohru Ishizuka , Nobuhiko Noto
发明人： Hiroshi Takeno , Tohru Ishizuka , Nobuhiko Noto
IPC分类号： H01L21/762
CPC分类号： H01L21/76243 , H01L21/26533
摘要： The present invention provides a method for manufacturing an SOI substrate including at least: an oxygen ion implantation step of ion-implanting oxygen ions from one main surface of a single-crystal silicon substrate to form an oxygen ion implanted layer; and a heat treatment step of performing a heat treatment with respect to the single-crystal silicon substrate having the oxygen ion implanted layer formed therein to change the oxygen ion implanted layer into a buried oxide film layer, wherein acceleration energy for the oxygen ion implantation is previously determined from a thickness of the buried oxide film layer to be obtained, and the oxygen ion implantation step is carried out with the determined acceleration energy to manufacture the SOI substrate. Thereby, it is possible to provide an SOI substrate manufacturing method that enables efficiently manufacturing an SOI substrate having a continuous and uniform thin buried oxide film layer.
摘要翻译：本发明提供一种SOI衬底的制造方法，其至少包括：从单晶硅衬底的一个主表面离子注入氧离子以形成氧离子注入层的氧离子注入步骤; 以及对其中形成有氧离子注入层的单晶硅衬底进行热处理以将氧离子注入层改变为掩埋氧化膜层的热处理步骤，其中用于氧离子注入的加速能为预先根据要获得的掩埋氧化物膜层的厚度确定，并且用所确定的加速能量进行氧离子注入步骤以制造SOI衬底。由此，能够提供能够高效地制造具有连续均匀的薄埋氧化膜层的SOI衬底的SOI衬底制造方法。

6. 发明授权

US07799660B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07799660B2
公开(公告)日：2010-09-21
申请号：US12078526
申请日：2008-04-01
申请人： Tohru Ishizuka , Hiroshi Takeno , Nobuhiko Noto
发明人： Tohru Ishizuka , Hiroshi Takeno , Nobuhiko Noto
IPC分类号： H01L21/322
CPC分类号： H01L21/76243 , H01L21/26533 , H01L21/3226
摘要： The present invention provides a method for manufacturing an SOI substrate by which an oxygen ion is implanted from at least one of main surfaces of a single-crystal silicon substrate to form an oxygen-ion-implanted layer and then an oxide film-forming heat treatment that changes the formed oxygen-ion-implanted layer into a buried oxide film layer is performed with respect to the single-crystal silicon substrate to manufacture the SOI substrate, the method comprising: implanting a neutral element ion having a dose amount of 1×1012 atoms/cm2 or above and less than 1×1015 atoms/cm2 into a back surface to form an ion-implanted damage layer after performing the oxide film-forming heat treatment; and gettering a metal impurity in the ion-implanted damage layer by a subsequent heat treatment to enable reducing a metal impurity concentration on a front surface side. Thereby, there is provided a method for manufacturing an SOI substrate having a gettering layer on a back surface thereof in a simple process at a low cost.
摘要翻译：本发明提供了一种用于制造SOI衬底的方法，通过该SOI衬底从单晶硅衬底的至少一个主表面注入氧离子以形成氧离子注入层，然后进行氧化膜形成热处理相对于单晶硅基板进行将形成的氧离子注入层变成埋入氧化膜层的方法，制造SOI衬底，该方法包括：注入剂量为1×1012的中性元素离子原子/ cm 2以上且小于1×10 15原子/ cm 2进入背面，在进行氧化膜形成热处理后形成离子注入损伤层; 并通过随后的热处理在离子注入的损伤层中吸收金属杂质，以减少前表面侧的金属杂质浓度。因此，提供了一种以简单的方法以低成本制造其背面上具有吸气层的SOI衬底的方法。

7. 发明授权

US08338277B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US08338277B2
公开(公告)日：2012-12-25
申请号：US12449347
申请日：2008-02-19
申请人： Hiroshi Takeno , Tohru Ishizuka , Nobuhiko Noto
发明人： Hiroshi Takeno , Tohru Ishizuka , Nobuhiko Noto
IPC分类号： H01L21/20
CPC分类号： H01L21/76243 , H01L21/26533
摘要： The present invention provides a method for manufacturing an SOI substrate including at least: an oxygen ion implantation step of ion-implanting oxygen ions from one main surface of a single-crystal silicon substrate to form an oxygen ion implanted layer; and a heat treatment step of performing a heat treatment with respect to the single-crystal silicon substrate having the oxygen ion implanted layer formed therein to change the oxygen ion implanted layer into a buried oxide film layer, wherein acceleration energy for the oxygen ion implantation is previously determined from a thickness of the buried oxide film layer to be obtained, and the oxygen ion implantation step is carried out with the determined acceleration energy to manufacture the SOI substrate. Thereby, it is possible to provide an SOI substrate manufacturing method that enables efficiently manufacturing an SOI substrate having a continuous and uniform thin buried oxide film layer.
摘要翻译：本发明提供一种SOI衬底的制造方法，其至少包括：从单晶硅衬底的一个主表面离子注入氧离子以形成氧离子注入层的氧离子注入步骤; 以及对其中形成有氧离子注入层的单晶硅衬底进行热处理以将氧离子注入层改变为掩埋氧化膜层的热处理步骤，其中用于氧离子注入的加速能为预先根据要获得的掩埋氧化物膜层的厚度确定，并且用所确定的加速能量进行氧离子注入步骤以制造SOI衬底。由此，能够提供能够高效地制造具有连续均匀的薄埋氧化膜层的SOI衬底的SOI衬底制造方法。

8. 发明授权

US07749861B2 Method for manufacturing SOI substrate and SOI substrate 有权
标题翻译：制造SOI衬底和SOI衬底的方法
公开(公告)号：US07749861B2
公开(公告)日：2010-07-06
申请号：US12086009
申请日：2006-10-20
申请人： Hiroshi Takeno , Nobuhiko Noto
发明人： Hiroshi Takeno , Nobuhiko Noto
IPC分类号： H01L21/46 , H01L21/30 , H01L21/76 , H01L21/42 , H01L21/477
CPC分类号： H01L21/76256 , H01L21/3226 , H01L29/78603
摘要： According to the present invention, there is provided a method for manufacturing an SOI substrate based on a bonding method, comprising at least: forming a silicon oxide film on a surface of at least one of a single-crystal silicon substrate that becomes an SOI layer and a single-crystal silicon substrate that becomes a support substrate; bonding the single-crystal silicon substrate that becomes the SOI layer to the single-crystal silicon substrate that becomes the support substrate through the silicon oxide film; and performing a heat treatment for holding at a temperature falling within the range of at least 950° C. to 1100° C. and then carrying out a heat treatment at a temperature higher than 1100° C. when effecting a bonding heat treatment for increasing bonding strength. As a result, there are provided the method for manufacturing an SOI substrate that can efficiently manufacture an SOI substrate having an excellent gettering ability with respect to metal contamination in an SOI layer, and the SOI substrate.
摘要翻译：根据本发明，提供一种基于接合方法制造SOI衬底的方法，至少包括：在形成SOI层的单晶硅衬底中的至少一个的表面上形成氧化硅膜以及成为支撑基板的单晶硅基板; 通过氧化硅膜将成为SOI层的单晶硅基板接合到成为支撑基板的单晶硅基板上; 并进行保持在至少950℃〜1100℃的范围内的温度的热处理，然后在进行用于增加的接合热处理时，在高于1100℃的温度下进行热处理粘结强度。结果，提供了一种能够有效地制造相对于SOI层中的金属污染而具有优异的吸杂能力的SOI衬底和SOI衬底的SOI衬底的制造方法。

9. 发明申请

US20090042361A1 Method for Manufacturing SOI Substrate and SOI Substrate 有权
标题翻译：制造SOI衬底和SOI衬底的方法
公开(公告)号：US20090042361A1
公开(公告)日：2009-02-12
申请号：US12086009
申请日：2006-10-20
申请人： Hiroshi Takeno , Nobuhiko Noto
发明人： Hiroshi Takeno , Nobuhiko Noto
IPC分类号： H01L21/30
CPC分类号： H01L21/76256 , H01L21/3226 , H01L29/78603
摘要： According to the present invention, there is provided a method for manufacturing an SOI substrate based on a bonding method, comprising at least: forming a silicon oxide film on a surface of at least one of a single-crystal silicon substrate that becomes an SOI layer and a single-crystal silicon substrate that becomes a support substrate; bonding the single-crystal silicon substrate that becomes the SOI layer to the single-crystal silicon substrate that becomes the support substrate through the silicon oxide film; and performing a heat treatment for holding at a temperature falling within the range of at least 950° C. to 1100° C. and then carrying out a heat treatment at a temperature higher than 1100° C. when effecting a bonding heat treatment for increasing bonding strength. As a result, there are provided the method for manufacturing an SOI substrate that can efficiently manufacture an SOI substrate having an excellent gettering ability with respect to metal contamination in an SOI layer, and the SOI substrate.
摘要翻译：根据本发明，提供了一种基于接合方法制造SOI衬底的方法，至少包括：在形成SOI层的单晶硅衬底中的至少一个的表面上形成氧化硅膜以及成为支撑基板的单晶硅基板; 通过氧化硅膜将成为SOI层的单晶硅基板接合到成为支撑基板的单晶硅基板上; 并进行保持在至少950℃〜1100℃的范围内的温度的热处理，然后在进行用于增加的接合热处理时，在高于1100℃的温度下进行热处理粘结强度。结果，提供了一种能够有效地制造相对于SOI层中的金属污染而具有优异的吸杂能力的SOI衬底和SOI衬底的SOI衬底的制造方法。

10. 发明申请

US20080261411A1 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20080261411A1
公开(公告)日：2008-10-23
申请号：US12078526
申请日：2008-04-01
申请人： Tohru Ishizuka , Hiroshi Takeno , Nobuhiko Noto
发明人： Tohru Ishizuka , Hiroshi Takeno , Nobuhiko Noto
IPC分类号： H01L21/31
CPC分类号： H01L21/76243 , H01L21/26533 , H01L21/3226
摘要： The present invention provides a method for manufacturing an SOI substrate by which an oxygen ion is implanted from at least one of main surfaces of a single-crystal silicon substrate to form an oxygen-ion-implanted layer and then an oxide film-forming heat treatment that changes the formed oxygen-ion-implanted layer into a buried oxide film layer is performed with respect to the single-crystal silicon substrate to manufacture the SOI substrate, the method comprising: implanting a neutral element ion having a dose amount of 1×1012 atoms/cm2 or above and less than 1×1015 atoms/cm2 into a back surface to form an ion-implanted damage layer after performing the oxide film-forming heat treatment; and gettering a metal impurity in the ion-implanted damage layer by a subsequent heat treatment to enable reducing a metal impurity concentration on a front surface side. Thereby, there is provided a method for manufacturing an SOI substrate having a gettering layer on a back surface thereof in a simple process at a low cost.
摘要翻译：本发明提供了一种用于制造SOI衬底的方法，通过该SOI衬底从单晶硅衬底的至少一个主表面注入氧离子以形成氧离子注入层，然后进行氧化膜形成热处理对于单晶硅基板进行将所形成的氧离子注入层改变为掩埋氧化膜层以制造SOI衬底的方法，该方法包括：注入剂量为1×10 12个原子/ cm 2以上且小于1×10 15个原子/ cm 2进入背面以形成离子进行氧化膜形成热处理后的植入损伤层; 并通过随后的热处理在离子注入的损伤层中吸收金属杂质，以减少前表面侧的金属杂质浓度。因此，提供了一种以简单的方法以低成本制造其背面上具有吸气层的SOI衬底的方法。

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