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11. 发明授权

US06350497B1 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US06350497B1
公开(公告)日：2002-02-26
申请号：US09616989
申请日：2000-07-14
申请人： Hitoshi Murayama , Toshiyasu Shirasuna , Ryuji Okamura , Kazuyoshi Akiyama , Takashi Ohtsuka , Kazuto Hosoi
发明人： Hitoshi Murayama , Toshiyasu Shirasuna , Ryuji Okamura , Kazuyoshi Akiyama , Takashi Ohtsuka , Kazuto Hosoi
IPC分类号： H05H124
CPC分类号： H01J37/32082 , C23C16/4588 , C23C16/509 , H01J37/32532 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： For permitting increase in productivity and improvement in uniformity and reproducibility of characteristics of deposited films while maintaining good film characteristics, a plasma processing apparatus is constructed in such structure that a plurality of cylindrical substrates are set in a depressurizable reaction vessel and that a source gas supplied into the reaction vessel is decomposed by a high frequency power introduced from a high frequency power introducing means to generate a plasma to permit deposited film formation, etching, or surface modification on the cylindrical substrates, wherein the plurality of cylindrical substrates are placed at equal intervals on the same circumference and wherein the high frequency power introducing means is provided outside the placing circumference for the cylindrical substrates.
摘要翻译：为了在保持良好的膜特性的同时提高生产率和提高沉积膜的特性的均匀性和再现性，等离子体处理装置被构造成使得多个圆柱形基板被设置在可降压反应容器中并且提供源气体通过从高频功率引入装置引入的高频功率分解到反应容器中以产生等离子体以允许在圆柱形基板上沉积膜形成，蚀刻或表面改性，其中多个圆柱形基板以等间隔放置并且其中高频功率引入装置设置在用于圆柱形基板的放置圆周的外侧。

12. 发明授权

US6155201A Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US6155201A
公开(公告)日：2000-12-05
申请号：US157933
申请日：1998-09-22
申请人： Hitoshi Murayama , Toshiyasu Shirasuna , Ryuji Okamura , Kazuyoshi Akiyama , Takashi Ohtsuka , Kazuto Hosoi
发明人： Hitoshi Murayama , Toshiyasu Shirasuna , Ryuji Okamura , Kazuyoshi Akiyama , Takashi Ohtsuka , Kazuto Hosoi
IPC分类号： G03G5/08 , C23C16/00 , C23C16/458 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/285 , H01L31/20
CPC分类号： H01J37/32082 , C23C16/4588 , C23C16/509 , H01J37/32532 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： For permitting increase in productivity and improvement in uniformity and reproducibility of characteristics of deposited films while maintaining good film characteristics, a plasma processing apparatus is constructed in such structure that a plurality of cylindrical substrates are set in a depressurizable reaction vessel and that a source gas supplied into the reaction vessel is decomposed by a high frequency power introduced from a high frequency power introducing means to generate a plasma to permit deposited film formation, etching, or surface modification on the cylindrical substrates, wherein the plurality of cylindrical substrates are placed at equal intervals on the same circumference and wherein the high frequency power introducing means is provided outside the placing circumference for the cylindrical substrates.
摘要翻译：为了在保持良好的膜特性的同时提高生产率和提高沉积膜的特性的均匀性和再现性，等离子体处理装置被构造成使得多个圆柱形基板被设置在可降压反应容器中并且提供源气体通过从高频功率引入装置引入的高频功率分解到反应容器中以产生等离子体以允许在圆柱形基板上沉积膜形成，蚀刻或表面改性，其中多个圆柱形基板以等间隔放置并且其中高频功率引入装置设置在用于圆柱形基板的放置圆周的外侧。

13. 发明授权

US07051671B2 Vacuum processing apparatus in which high frequency powers having mutually different frequencies are used to generate plasma for processing an article 有权
标题翻译：使用具有相互不同的频率的高频功率来产生处理物品的等离子体的真空处理装置
公开(公告)号：US07051671B2
公开(公告)日：2006-05-30
申请号：US10875404
申请日：2004-06-25
申请人： Makoto Aoki , Toshiyasu Shirasuna , Hiroaki Niino , Kazuyoshi Akiyama , Hitoshi Murayama , Shinji Tsuchida , Daisuke Tazawa , Yukihiro Abe
发明人： Makoto Aoki , Toshiyasu Shirasuna , Hiroaki Niino , Kazuyoshi Akiyama , Hitoshi Murayama , Shinji Tsuchida , Daisuke Tazawa , Yukihiro Abe
IPC分类号： C23C16/00
CPC分类号： H01J37/32174 , G03G5/08278 , H01J37/32082 , H01J37/32165 , H01J37/32183 , H01J37/32568
摘要： A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy a required relationship.
摘要翻译：一种真空处理方法，包括将待处理的物品放置在反应容器中，同时向相同的高频电极提供具有不同频率的至少两个高频电源，以通过被引入到高频电极的高频功率在反应容器中产生等离子体来自高频电极的反应容器。提供的至少两个高频功率的频率和功率值满足所需的关系。

14. 发明授权

US06761128B2 Plasma treatment apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06761128B2
公开(公告)日：2004-07-13
申请号：US09899188
申请日：2001-07-06
申请人： Toshiyasu Shirasuna , Tatsuyuki Aoike , Kazuyoshi Akiyama , Hitoshi Murayama , Takashi Otsuka , Daisuke Tazawa , Kazuto Hosoi , Yukihiro Abe
发明人： Toshiyasu Shirasuna , Tatsuyuki Aoike , Kazuyoshi Akiyama , Hitoshi Murayama , Takashi Otsuka , Daisuke Tazawa , Kazuto Hosoi , Yukihiro Abe
IPC分类号： H01L2100
CPC分类号： C23C16/24 , C23C16/505 , H01J37/32082 , H01J37/32183 , H05H1/46
摘要： In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.
摘要翻译：在通过利用通过高频电源装置将高频电力提供给内部抽真空电抗器而产生的辉光放电来处理目标衬底表面的等离子体处理方法和装置中，多个阻抗调节装置对应于多个电抗器的阻抗设置在电抗器一侧和高频电源装置一侧上的调节阻抗，并且高频电力通过对应于反应堆。可以在具有不同阻抗的多个反应器中以高效率和低成本进行等离子体处理。

15. 发明授权

US07550180B2 Plasma treatment method 失效
标题翻译：等离子体处理方法
公开(公告)号：US07550180B2
公开(公告)日：2009-06-23
申请号：US12055431
申请日：2008-03-26
申请人： Toshiyasu Shirasuna , Tatsuyuki Aoike , Kazuyoshi Akiyama , Hitoshi Murayama , Takashi Otsuka , Daisuke Tazawa , Kazuto Hosoi , Yukihiro Abe
发明人： Toshiyasu Shirasuna , Tatsuyuki Aoike , Kazuyoshi Akiyama , Hitoshi Murayama , Takashi Otsuka , Daisuke Tazawa , Kazuto Hosoi , Yukihiro Abe
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： C23C16/24 , C23C16/505 , H01J37/32082 , H01J37/32183 , H05H1/46
摘要： In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.
摘要翻译：在通过利用通过高频电源装置将高频电力提供给内部抽真空电抗器而产生的辉光放电来处理目标衬底表面的等离子体处理方法和装置中，多个阻抗调节装置对应于多个电抗器的阻抗设置在电抗器一侧和高频电源装置一侧上的调节阻抗，并且高频电力通过对应于反应堆。可以在具有不同阻抗的多个反应器中以高效率和低成本进行等离子体处理。

16. 发明申请

US20080271676A1 PLASMA TREATMENT METHOD AND PLASMA TREATMENT APPARATUS 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20080271676A1
公开(公告)日：2008-11-06
申请号：US12055431
申请日：2008-03-26
申请人： Toshiyasu Shirasuna , Tatsuyuki Aoike , Kazuyoshi Akiyama , Hitoshi Murayama , Takashi Otsuka , Daisuke Tazawa , Kazuto Hosoi , Yukihiro Abe
发明人： Toshiyasu Shirasuna , Tatsuyuki Aoike , Kazuyoshi Akiyama , Hitoshi Murayama , Takashi Otsuka , Daisuke Tazawa , Kazuto Hosoi , Yukihiro Abe
IPC分类号： C23C16/00
CPC分类号： C23C16/24 , C23C16/505 , H01J37/32082 , H01J37/32183 , H05H1/46
摘要： In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.
摘要翻译：在通过利用通过高频电源装置将高频电力提供给内部抽真空电抗器而产生的辉光放电来处理目标衬底表面的等离子体处理方法和装置中，多个阻抗调节装置对应于多个电抗器的阻抗设置在电抗器一侧和高频电源装置一侧上的调节阻抗，并且高频电力通过对应于反应堆。可以在具有不同阻抗的多个反应器中以高效率和低成本进行等离子体处理。

17. 发明授权

US06486045B2 Apparatus and method for forming deposited film 失效
标题翻译：用于形成沉积膜的装置和方法
公开(公告)号：US06486045B2
公开(公告)日：2002-11-26
申请号：US09851552
申请日：2001-05-10
申请人： Takashi Otsuka , Tatsuyuki Aoike , Toshiyasu Shirasuna , Kazuyoshi Akiyama , Hitoshi Murayama , Daisuke Tazawa , Kazuto Hosoi
发明人： Takashi Otsuka , Tatsuyuki Aoike , Toshiyasu Shirasuna , Kazuyoshi Akiyama , Hitoshi Murayama , Daisuke Tazawa , Kazuto Hosoi
IPC分类号： H01L2120
CPC分类号： H01J37/32082 , C23C16/24 , C23C16/507
摘要： In order to make possible formation of a deposited film of a relatively large area at a treatment rate which could not accomplished by the plasma process of the prior art, and in order to make possible stable production of the deposited film without variation in film quality, in an apparatus and a method for forming a deposited film, a part of a reaction vessel is formed of a dielectric member, at least one high-frequency electrode is arranged so as to face at least one substrate with interposition of the dielectric member, an earth shield is arranged so as to cover the reaction vessel and the high-frequency electrode, plasma is generated between the high-frequency electrode and the substrate, and a deposited film is formed under the conditions in which the following equation: 0.8×(&egr;2/d3)
摘要翻译：为了可能以现有技术的等离子体处理不能实现的处理速率形成相对较大面积的沉积膜，为了使膜的质量不变，可以稳定地生产沉积膜，在用于形成沉积膜的装置和方法中，反应容器的一部分由电介质构成，至少一个高频电极布置成面对至少一个具有电介质构件的衬底，布置覆盖反应容器和高频电极的接地屏蔽层，在高频电极和基板之间产生等离子体，并且在满足以下等式的条件下形成沉积膜：其中d1 是介电部件的厚度，d2是从高频电极表面到电介质部件的距离，d3是与高频电极表面的距离 ncy电极到接地屏蔽的内表面，epsi1是电介质构件的介电常数，epsi2是反应容器和接地屏蔽之间的空间的介电常数。

18. 发明授权

US06861373B2 Vacuum processing method and semiconductor device manufacturing method in which high-frequency powers having mutually different frequencies are applied to at least one electrode 失效
标题翻译：真空处理方法和半导体器件制造方法，其中具有相互不同频率的高频功率被施加到至少一个电极
公开(公告)号：US06861373B2
公开(公告)日：2005-03-01
申请号：US10011776
申请日：2001-12-11
申请人： Makoto Aoki , Toshiyasu Shirasuna , Hiroaki Niino , Kazuyoshi Akiyama , Hitoshi Murayama , Shinji Tsuchida , Daisuke Tazawa , Yukihiro Abe
发明人： Makoto Aoki , Toshiyasu Shirasuna , Hiroaki Niino , Kazuyoshi Akiyama , Hitoshi Murayama , Shinji Tsuchida , Daisuke Tazawa , Yukihiro Abe
IPC分类号： H05H1/46 , C23C16/505 , G03G5/08 , G03G5/082 , H01J37/32 , H01L21/205 , G03G5/00
CPC分类号： H01J37/32174 , G03G5/08278 , H01J37/32082 , H01J37/32165 , H01J37/32183 , H01J37/32568
摘要： A vacuum processing method that includes placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having mutually different frequencies to at least one high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode(s), thereby processing the article. The frequencies and power values of the at least two high-frequency powers supplied satisfy required relationships.
摘要翻译：一种真空处理方法，其特征在于，将待处理物品放置在反应容器中，同时向至少一个高频电极供给具有相互不同频率的至少两个高频电力，以通过高频率在反应容器中产生等离子体从高频电极引入反应容器，从而处理制品。提供的至少两个高频功率的频率和功率值满足所需的关系。

19. 发明授权

US06443191B1 Vacuum processing methods 有权
标题翻译：真空加工方法
公开(公告)号：US06443191B1
公开(公告)日：2002-09-03
申请号：US09842154
申请日：2001-04-26
申请人： Hitoshi Murayama , Tatsuyuki Aoike , Toshiyasu Shirasuna , Kazuyoshi Akiyama , Takashi Ohtsuka , Daisuke Tazawa , Kazuto Hosoi , Yukihiro Abe
发明人： Hitoshi Murayama , Tatsuyuki Aoike , Toshiyasu Shirasuna , Kazuyoshi Akiyama , Takashi Ohtsuka , Daisuke Tazawa , Kazuto Hosoi , Yukihiro Abe
IPC分类号： B65B3100
CPC分类号： H01L21/67017 , H01L21/67126
摘要： For making it feasible to suit to vacuum processing utilizing a system consisting of an exhaust section and a separable vacuum processing vessel section, to ensure flexibility of production, to prevent dust from attaching onto an article, so as to achieve increase in non-defective percentage of vacuum-processed articles, and also to suppress variability in vacuum processing characteristics among lots, an article is loaded into a movable vacuum processing vessel section, the vacuum processing vessel section is preliminarily pressure-reduced and moved, the vacuum processing vessel section is connected to an exhaust section, and communication is established between the vacuum processing vessel section and the exhaust section to perform vacuum processing. A first opening provided in the vacuum processing vessel section is connected to a second opening provided in the exhaust section and a vacuum seal valve of the first opening which is openable and closable, is opened. When opening the valve, the internal pressure of the vacuum processing vessel under reduced pressure is set higher than the pressure of another pressure-reduced space to be brought into communication therewith by the opening of the valve.
摘要翻译：为了使其适用于利用由排气部和可分离真空处理容器部构成的系统的真空处理，为了确保生产的灵活性，防止灰尘附着在物品上，以达到无缺陷百分比的增加的真空处理容器部分，并且还抑制批次之间的真空处理特性的变化，将物品装载到可移动真空处理容器部分中，真空处理容器部分被预先减压和移动，真空处理容器部分连接到排气部分，并且在真空处理容器部分和排气部分之间建立连通以进行真空处理。设置在真空处理容器部分中的第一开口连接到设置在排气部分中的第二开口，并且打开可打开和关闭的第一开口的真空密封阀。当打开阀时，真空处理容器在减压下的内部压力设定为高于通过打开阀而与其连通的另一压力减小空间的压力。

20. 发明授权

US06250251B1 Vacuum processing apparatus and vacuum processing method 有权
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US06250251B1
公开(公告)日：2001-06-26
申请号：US09282462
申请日：1999-03-31
申请人： Kazuyoshi Akiyama , Tatsuyuki Aoike , Toshiyasu Shirasuna , Hitoshi Murayama , Takashi Otsuka , Daisuke Tazawa , Kazuto Hosoi
发明人： Kazuyoshi Akiyama , Tatsuyuki Aoike , Toshiyasu Shirasuna , Hitoshi Murayama , Takashi Otsuka , Daisuke Tazawa , Kazuto Hosoi
IPC分类号： C23C1600
CPC分类号： H01J37/32431 , C23C16/24 , C23C16/4404
摘要： An object of the present invention is to provide a vacuum processing apparatus and a vacuum processing method capable of effectively preventing film peeling generated in a reaction vessel to provide a deposited film of excellent quality with reduced spherical projections. The present invention provides a vacuum processing apparatus or method utilizing a vessel, means for supplying a gas into the vessel and means for supplying an electric power and in which the gas is decomposed by the electric power to generate a discharge, wherein the surface of a member confronted with the discharge satisfies the conditions of (1) the ten-point mean roughness Rz with respect to a reference length of 2.5 mm according to the JIS standard being in a range of not smaller than 5 &mgr;m and not larger than 200 &mgr;m, and (2) the mean spacing S of adjacent local peaks according to the JIS standard being in a range of not smaller than 5 &mgr;m and not larger than 100 &mgr;m.
摘要翻译：本发明的目的是提供一种真空处理装置和真空处理方法，其能够有效地防止在反应容器中产生的膜剥离，从而提供具有减小的球形突起的优质的沉积膜。本发明提供了一种使用容器的真空处理装置或方法，用于向容器供给气体的装置和用于供给电力的装置，其中气体被电力分解以产生排放，其中，面对放电的构件满足以下条件：（1）根据JIS标准的十点平均粗糙度Rz相对于2.5mm的参考长度在不小于5μm且不大于200μm的范围内，和（2）根据JIS标准的相邻局部峰的平均间隔S在不小于5μm且不大于100μm的范围内。

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