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    • 17. 发明申请
    • LOW EJECTION ENERGY MICRO-FLUID EJECTION HEADS
    • 低喷射能量微流体喷射头
    • US20100213165A1
    • 2010-08-26
    • US12758161
    • 2010-04-12
    • Frank E. AndersonByron V. BellRobert W. CornellYimin Guan
    • Frank E. AndersonByron V. BellRobert W. CornellYimin Guan
    • C23F1/00B21D53/76
    • B41J2/1603B41J2/14129B41J2/1628B41J2/164Y10T29/49401
    • A micro-fluid ejection device structure and method therefor having improved low energy design. The devices include a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.
    • 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl,Ta2N,TaAl(O,N),TaAlSi,Ti(N,O),WSi(O,N),TaAlN等的电阻层的绝缘层上形成多个加热电阻体, 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上,以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化以在多个加热电阻器上提供流体接触层。
    • 19. 发明授权
    • Low ejection energy micro-fluid ejection heads
    • 低喷射能量微流体喷射头
    • US07749397B2
    • 2010-07-06
    • US11673795
    • 2007-02-12
    • Frank E. AndersonByron V. BellRobert W. CornellYimin Guan
    • Frank E. AndersonByron V. BellRobert W. CornellYimin Guan
    • G01D15/00G11B5/127
    • B41J2/1603B41J2/14129B41J2/1628B41J2/164Y10T29/49401
    • A micro-fluid ejection device structure and method therefor having improved low energy design. The devices includes a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.
    • 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl,Ta2N,TaAl(O,N),TaAlSi,Ti(N,O),WSi(O,N),TaAlN等的电阻层的绝缘层上形成多个加热电阻体, 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上,以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化以在多个加热电阻器上提供流体接触层。