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    • 1. 发明授权
    • Low ejection energy micro-fluid ejection heads
    • 低喷射能量微流体喷射头
    • US07195343B2
    • 2007-03-27
    • US10927796
    • 2004-08-27
    • Frank E. AndersonByron V. BellRobert W. CornellYimin Guan
    • Frank E. AndersonByron V. BellRobert W. CornellYimin Guan
    • B41J2/05
    • B41J2/1603B41J2/14129B41J2/1628B41J2/164Y10T29/49401
    • A micro-fluid ejection device structure and method therefor having improved low energy design. The devices includes a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.
    • 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl,Ta2N,TaAl(O,N),TaAlSi,Ti(N,O),WSi(O,N),TaAlN等的电阻层的绝缘层上形成多个加热电阻体, 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上,以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化,以在多个加热电阻器上提供流体接触层。
    • 2. 发明授权
    • Low ejection energy micro-fluid ejection heads
    • 低喷射能量微流体喷射头
    • US08366952B2
    • 2013-02-05
    • US12758161
    • 2010-04-12
    • Frank E. AndersonByron V. BellRobert W. CornellYimin Guan
    • Frank E. AndersonByron V. BellRobert W. CornellYimin Guan
    • G01D15/00G11B5/127
    • B41J2/1603B41J2/14129B41J2/1628B41J2/164Y10T29/49401
    • A micro-fluid ejection device structure and method therefor having improved low energy design. The devices include a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.
    • 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl,Ta2N,TaAl(O,N),TaAlSi,Ti(N,O),WSi(O,N),TaAlN等的电阻层的绝缘层上形成多个加热电阻体, 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上,以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化以在多个加热电阻器上提供流体接触层。
    • 3. 发明申请
    • LOW EJECTION ENERGY MICRO-FLUID EJECTION HEADS
    • 低喷射能量微流体喷射头
    • US20100213165A1
    • 2010-08-26
    • US12758161
    • 2010-04-12
    • Frank E. AndersonByron V. BellRobert W. CornellYimin Guan
    • Frank E. AndersonByron V. BellRobert W. CornellYimin Guan
    • C23F1/00B21D53/76
    • B41J2/1603B41J2/14129B41J2/1628B41J2/164Y10T29/49401
    • A micro-fluid ejection device structure and method therefor having improved low energy design. The devices include a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.
    • 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl,Ta2N,TaAl(O,N),TaAlSi,Ti(N,O),WSi(O,N),TaAlN等的电阻层的绝缘层上形成多个加热电阻体, 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上,以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化以在多个加热电阻器上提供流体接触层。
    • 4. 发明授权
    • Low ejection energy micro-fluid ejection heads
    • 低喷射能量微流体喷射头
    • US07749397B2
    • 2010-07-06
    • US11673795
    • 2007-02-12
    • Frank E. AndersonByron V. BellRobert W. CornellYimin Guan
    • Frank E. AndersonByron V. BellRobert W. CornellYimin Guan
    • G01D15/00G11B5/127
    • B41J2/1603B41J2/14129B41J2/1628B41J2/164Y10T29/49401
    • A micro-fluid ejection device structure and method therefor having improved low energy design. The devices includes a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.
    • 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl,Ta2N,TaAl(O,N),TaAlSi,Ti(N,O),WSi(O,N),TaAlN等的电阻层的绝缘层上形成多个加热电阻体, 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上,以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化以在多个加热电阻器上提供流体接触层。
    • 10. 发明授权
    • Thin film ink jet printhead adhesion enhancement
    • 薄膜喷墨打印头附着力增强
    • US06929349B2
    • 2005-08-16
    • US10685115
    • 2003-10-14
    • Byron V. BellYimin Guan
    • Byron V. BellYimin Guan
    • B41J2/14B41J2/135
    • B41J2/14129
    • An ink jet printhead for an ink jet printer and method for making an improved printhead. The printhead includes a nozzle plate attached to a heater chip. The heater chip is a semiconductor substrate having a resistive layer deposited on the substrate, a dielectric layer deposited on the resistive layer, a cavitation layer for contact with ink, and an adhesion layer between the dielectric layer and cavitation layer. The adhesion layer is selected from the group consisting of tantalum nitride (TaN), tantalum oxide (TaO), silicon nitride (SiN), and titanium nitride (TiN), provided the adhesion layer and cavitation layer are selected so that the adhesion layer has no elemental component in common with the cavitation layer when the dielectric layer is comprised of SiC/SiN. Adhesion between the dielectric layer and cavitation layer is significantly enhanced by the invention.
    • 一种用于喷墨打印机的喷墨打印头和用于制造改进的打印头的方法。 打印头包括附接到加热器芯片的喷嘴板。 加热器芯片是具有沉积在基板上的电阻层,沉积在电阻层上的介电层,与油墨接触的空穴层以及介电层和空化层之间的粘合层的半导体基板。 粘合层选自氮化钽(TaN),氧化钽(TaO),氮化硅(SiN)和氮化钛(TiN),只要选择粘合层和空穴层,使得粘附层具有 当介电层由SiC / SiN组成时,没有与空化层共同的元素分量。 通过本发明,电介质层和空化层之间的粘合力显着增强。