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    • 11. 发明申请
    • Composition for Chemical Conversion Treatment and Member Having a Chemical Conversion Film Formed by the Treatment
    • 用于化学转化处理的组合物和具有由处理形成的化学转化膜的构件
    • US20110132498A1
    • 2011-06-09
    • US12994348
    • 2010-01-29
    • Naruhiko NojimaShusaku IshikawaTomoko Ishikawa
    • Naruhiko NojimaShusaku IshikawaTomoko Ishikawa
    • C23C22/05C09K3/00
    • C23C22/53C23C2222/10
    • A chemical conversion treatment solution comprising, based on the total composition, 0.1 g/L to 3.0 g/L of an aqueous cobalt-containing substance in cobalt equivalent, 0.05 g/L to 3.0 g/L of a pyrogallol compound in pyrogallol equivalent, and at least 1.5 g/L of an aqueous trivalent chromium-containing substance in chromium equivalent, the composition being acidic and the ratio of the content of the pyrogallol compound in pyrogallol equivalent to the content of the aqueous cobalt-containing substance in cobalt equivalent being 0.015 to 10, wherein a chemical conversion film formed on the metallic surface of a member by contacting the metallic surface with the composition for chemical conversion treatment has a content of hexavalent chromium of 0.050 μg/cm2 or less as measured by a method compliant with EN15205 after exposure to an environment having a temperature of 80° C. and a relative humidity of 100% for 72. hours.
    • 一种化学转化处理溶液,其包含基于总组成为0.1g / L至3.0g / L钴当量的含钴物质,0.05g / L至3.0g / L的连苯三酚等效的连苯三酚化合物, 和至少1.5g / L的含铬三价铬的物质,铬当量,组成为酸性,连苯三酚的连苯三酚化合物的含量与钴含量物质的含量相当于钴当量的比例为 0.015〜10,其中通过使所述金属表面与所述化学转化处理用组合物接触而在所述构件的金属表面上形成的化学转化膜,通过符合EN15205的方法测定的六价铬的含量为0.050μg/ cm 2以下 在暴露于温度为80℃,相对湿度为100%的环境中72小时后。
    • 12. 发明申请
    • Sensor Chip and Manufacturing Method Thereof
    • 传感器芯片及其制造方法
    • US20080248457A1
    • 2008-10-09
    • US11630475
    • 2005-06-21
    • Toshifumi HosoyaShingo KaimoriMoriyasu IchinoIsao KarubeMasao GotohHideaki NakamuraFumiyo KurusuTomoko Ishikawa
    • Toshifumi HosoyaShingo KaimoriMoriyasu IchinoIsao KarubeMasao GotohHideaki NakamuraFumiyo KurusuTomoko Ishikawa
    • C12Q1/00
    • G01N27/26
    • Provided are a sensor chip and a manufacturing method of this sensor chip, that includes a substrate, a cover layer, a spacer layer sandwiched between the substrate and the cover layer, and a hollow reaction section between the substrate and the cover layer, wherein warping due to changes in the environmental temperature and humidity does not occur.A sensor chip is provided including: a substrate; a cover layer; a spacer layer sandwiched between the substrate and the cover layer; a hollow reaction section provided between the substrate and the cover layer; and a detection section provided in the hollow reaction section, wherein the substrate and the cover layer are made of the same material and have the same thickness, and a material and a shape of the spacer layer are symmetrical with respect to a plane which is parallel to the substrate and located at equal distances from the substrate and from the cover layer, and a manufacturing method of the sensor chip is provided.
    • 提供了一种传感器芯片和该传感器芯片的制造方法,其包括基板,覆盖层,夹在基板和覆盖层之间的间隔层,以及基板和覆盖层之间的中空反应部,其中翘曲 由于环境温度和湿度的变化不会发生。 提供一种传感器芯片,包括:基板; 覆盖层; 夹在基板和覆盖层之间的间隔层; 设置在所述基板和所述覆盖层之间的中空反应部; 以及设置在所述中空反应部中的检测部,其中所述基板和所述覆盖层由相同的材料制成并且具有相同的厚度,并且所述间隔层的材料和形状相对于平行的平面对称 并且设置在距离基板和覆盖层相等的距离处,并且提供了传感器芯片的制造方法。
    • 19. 发明申请
    • Sensor Chip and Sensor Chip Production Method
    • 传感器芯片和传感器芯片生产方法
    • US20090257917A1
    • 2009-10-15
    • US12083694
    • 2006-10-16
    • Hideaki NakamuraMasao GotohTomoko IshikawaIsao KarubeToshifumi HosoyaShingo KaimoriMoriyasu Ichino
    • Hideaki NakamuraMasao GotohTomoko IshikawaIsao KarubeToshifumi HosoyaShingo KaimoriMoriyasu Ichino
    • B01J19/00B32B37/00
    • G01N27/3271Y10T156/1051
    • It is intended to provide a sensor chip which has a small size and is easily produced and capable of determining quantities of at least two components of multiple samples rapidly, conveniently, and correctly as well as to provide a production method capable of producing the sensor chip easily and with high productivity.A sensor chip includes a substrate, a cover layer, a spacer layer sandwiched between the substrate and the cover layer, multiple reaction portions disposed between the substrate and the cover layer, multiple detection units exposed in the hollow reaction portions, and a sample inlet communicated with the hollow reaction portions and a method for producing the sensor chip.A sensor chip includes two substrates opposed to each other, a spacer layer sandwiched between the substrates, and multiple measurement units disposed between the substrates and including two or more hollow reaction portions that share one sample inlet opened on outer surfaces of the substrates and detection electrode units respectively exposed in the hollow reaction portions and a method for producing the sensor chip.
    • 本发明旨在提供一种具有体积小且容易制造且能够快速,方便和正确地确定多个样品的至少两个组分的量的传感器芯片,以及提供能够生产传感器芯片的制造方法 容易和高生产力。 传感器芯片包括衬底,覆盖层,夹在衬底和覆盖层之间的间隔层,设置在衬底和覆盖层之间的多个反应部分,暴露在中空反应部分中的多个检测单元和连通的样品入口 中空反应部分和传感器芯片的制造方法。 传感器芯片包括彼此相对的两个基板,夹在基板之间的间隔层和设置在基板之间的多个测量单元,并且包括两个或更多个中空反应部分,其共享在基板的外表面上开放的一个样品入口和检测电极 分别暴露在中空反应部分中的单元和传感器芯片的制造方法。