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11. 发明申请

US20050126484A1 Edge flow faceplate for improvement of CVD film properties 审中-公开
标题翻译：边缘流动面板，用于改善CVD膜性能
公开(公告)号：US20050126484A1
公开(公告)日：2005-06-16
申请号：US11013124
申请日：2004-12-15
申请人： Maosheng Zhao , Lun Tsuei , Juan Rocha-Alvarez , Tom Cho
发明人： Maosheng Zhao , Lun Tsuei , Juan Rocha-Alvarez , Tom Cho
IPC分类号： C23C16/00 , C23C16/44 , C23C16/455 , C23C16/509 , H01J37/32 , H01L21/00
CPC分类号： C23C16/45565 , C23C16/5096 , H01J37/3244
摘要： Embodiments in accordance with the present invention relate to apparatuses and methods distributing processing gases over a workpiece surface. In accordance with one embodiment of the present invention, process gases are flowed to a surface of a semiconductor wafer through a substantially circular gas distribution showerhead defining a plurality of holes. A first set of holes located at the center of the faceplate, are arranged in a non-concentric manner not exhibiting radial symmetry. This asymmetric arrangement achieves maximum density of holes and gases distributed therefrom. To compensate for nonuniform exposure of the wafer edges to gases flowed from the first hole set, the faceplate periphery defines a second set of holes arranged concentrically and exhibiting radial symmetry. Processing substrates with gases flowed through the first and second sets of holes results in formation of films exhibiting enhanced uniformity across center-to-edge regions.
摘要翻译：根据本发明的实施例涉及在工件表面上分配处理气体的装置和方法。根据本发明的一个实施例，工艺气体通过限定多个孔的基本圆形的气体分配喷头流向半导体晶片的表面。位于面板中心的第一组孔布置成不呈径向对称的非同心方式。这种不对称布置实现了从其分布的孔和气体的最大密度。为了补偿晶片边缘对从第一孔组流出的气体的不均匀曝光，面板周边限定了同心布置且呈径向对称的第二组孔。处理具有流经第一和第二组孔的气体的衬底导致形成在中心到边缘区域上具有增强的均匀性的膜。

12. 发明申请

US20060192150A1 Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to a large area electron beam 失效
标题翻译：用于在暴露于大面积电子束之后降低电介质涂覆的基底上的电荷密度的方法和装置
公开(公告)号：US20060192150A1
公开(公告)日：2006-08-31
申请号：US11414649
申请日：2006-04-27
申请人： Alexandros Demos , Khaled Elsheref , Yuri Trachuk , Tom Cho , Girish Dixit , Hichem M'Saad , Derek Witty
发明人： Alexandros Demos , Khaled Elsheref , Yuri Trachuk , Tom Cho , Girish Dixit , Hichem M'Saad , Derek Witty
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/317 , H01J2237/0041
摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.
摘要翻译：根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

13. 发明申请

US20050224722A1 Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to large area electron beam 审中-公开
标题翻译：用于在暴露于大面积电子束之后降低电介质涂覆的基底上的电荷密度的方法和装置
公开(公告)号：US20050224722A1
公开(公告)日：2005-10-13
申请号：US11002600
申请日：2004-12-01
申请人： Alexandros Demos , Khaled Elsheref , Yuri Trachuk , Tom Cho , Girish Dixit , Hichem M'Saad , Derek Witty
发明人： Alexandros Demos , Khaled Elsheref , Yuri Trachuk , Tom Cho , Girish Dixit , Hichem M'Saad , Derek Witty
IPC分类号： H01J37/317
CPC分类号： H01J37/317 , H01J2237/0041
摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.
摘要翻译：根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

14. 发明授权

US5885356A Method of reducing residue accumulation in CVD chamber using ceramic lining 失效
标题翻译：使用陶瓷衬里减少CVD室中残留物累积的方法
公开(公告)号：US5885356A
公开(公告)日：1999-03-23
申请号：US577862
申请日：1995-12-22
申请人： Jun Zhao , Tom Cho , Xin Sheng Guo , Atsushi Tabata , Jianmin Qiao , Alex Schreiber
发明人： Jun Zhao , Tom Cho , Xin Sheng Guo , Atsushi Tabata , Jianmin Qiao , Alex Schreiber
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/50 , C30B25/02 , H01J37/32 , H01L21/205 , H01L21/31 , H01L21/687 , C23C16/00 , B44C1/22
CPC分类号： H01J37/32834 , C23C16/4401 , C23C16/4412 , C23C16/45502 , C23C16/4586 , C23C16/463 , C30B25/02 , H01J37/32477 , H01J37/32724 , H01L21/68742 , H01L21/68785 , H01J2237/022 , Y10S156/916
摘要： The present invention provides a method and apparatus for limiting residue build-up by lining with a ceramic material the exhaust plenun and exhaust manifold of a processing chamber. In another aspect of the invention, the inventors have used an air gap between the ceramic liner and the processing chamber walls to increase the dielectric value of the ceramic liner, and further inhibit the build-up of residues. In another aspect, the ceramic liner has been found to retain sufficient heat to allow the elimination of heaters typically used to heat the aluminum walls during a clean operation, if the clean operation is commenced immediately after a process step so that the ceramic retains the necessary heat from the previous processing step. The provision of an air gap aids in this heating, preventing the ceramic heat from being drawn off by direct contact with the aluminum walls. In a preferred embodiment, the ceramic liners are attached to the chamber walls with TEFLON.RTM. (polytetrafluoroethylene) screws.
摘要翻译：本发明提供了一种用于通过用陶瓷材料衬里处理室的排气增压和排气歧管来限制残余物堆积的方法和装置。在本发明的另一方面，本发明人已经在陶瓷衬垫和处理室壁之间使用气隙来增加陶瓷衬里的介电值，并进一步抑制残留物的积聚。在另一方面，已经发现陶瓷衬垫保持足够的热量，以便在清洁操作期间消除通常用于加热铝壁的加热器，如果在工艺步骤之后立即开始清洁操作，使得陶瓷保留必要的来自前一处理步骤的热量。提供气隙有助于这种加热，从而防止陶瓷热量与铝壁直接接触而被吸走。在一个优选实施例中，陶瓷衬垫用TEFLON TM（聚四氟乙烯）螺钉连接到室壁。

15. 发明授权

US5853607A CVD processing chamber 失效
标题翻译： CVD处理室
公开(公告)号：US5853607A
公开(公告)日：1998-12-29
申请号：US540812
申请日：1995-10-11
申请人： Jun Zhao , Tom Cho , Charles Dornfest , Stefan Wolff , Kevin Fairbairn , Xin Sheng Guo , Alex Schreiber , John M. White
发明人： Jun Zhao , Tom Cho , Charles Dornfest , Stefan Wolff , Kevin Fairbairn , Xin Sheng Guo , Alex Schreiber , John M. White
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , C30B25/02 , H01J37/32 , H01L21/205 , H01L21/687 , A62C1/00 , A62D1/00
CPC分类号： C23C16/45502 , C23C16/4401 , C23C16/4412 , C23C16/4586 , C23C16/46 , C23C16/463 , C30B25/02 , H01J37/32477 , H01J37/32724 , H01J37/32834 , H01L21/68742 , H01L21/68785 , H01J2237/022 , Y10S438/909
摘要： A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to an RF power supply outside the vacuum environment of the processing chamber. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces. All process chamber wall surfaces facing the region where plasma will be present during processing (except the gas distribution faceplate) are ceramic and therefore highly resistant to corrosion. The pedestal an un-anodized metal is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body is contained within the wall of the processing chamber helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber if allowed to migrate back to it through the vacuum piping.
摘要翻译：公开了一种处理室，其在正在处理的衬底上提供360°圆形气体/真空分布。正在加工的基板被支撑在加热且任选地冷却的基座组件上。衬底面向一体式气体分布面板，其连接到处理室真空环境外的RF电源。提供泵浦通道视图端口以验证和确认关于处理室内表面上的表面沉积程度的仪表读数。在处理过程中等离子体将存在的区域（除气体分布面板之外）的所有处理室壁表面均为陶瓷，因此具有很高的抗腐蚀性。基座是非阳极氧化的金属也被具有对准特征的松散配合的陶瓷表面覆盖，以保持基座的晶片支撑表面和正被处理的晶片之间的同心度。阀体包含在处理室的壁内，有助于减少可用于在真空通道表面中冷凝或冷却的挥发性工艺气体组分的冷凝的表面积，并且如果允许通过真空迁移回到处理室，则可污染处理室管道。

16. 发明授权

US5558717A CVD Processing chamber 失效
标题翻译： CVD加工室
公开(公告)号：US5558717A
公开(公告)日：1996-09-24
申请号：US348273
申请日：1994-11-30
申请人： Jun Zhao , Tom Cho , Charles Dornfest , Stefan Wolff , Kevin Fairbairn , Xin S Guo , Alex Schreiber , John M. White
发明人： Jun Zhao , Tom Cho , Charles Dornfest , Stefan Wolff , Kevin Fairbairn , Xin S Guo , Alex Schreiber , John M. White
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , C30B25/02 , H01J37/32 , H01L21/205 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/4401 , C23C16/4412 , C23C16/4586 , C23C16/46 , C23C16/463 , C30B25/02 , H01J37/32477 , H01J37/32724 , H01J37/32834 , H01L21/68742 , H01L21/68785 , H01J2237/022 , Y10S438/909
摘要： A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to an RF power supply outside the vacuum environment of the processing chamber. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces. All process chamber wall surfaces facing the region where plasma will be present during processing (except the gas distribution faceplate) are ceramic and therefore highly resistant to corrosion. The pedestal an un-anodized metal is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body is contained within the wall of the processing chamber helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber if allowed to migrate back to it through the vacuum piping.
摘要翻译：公开了一种处理室，其在正在处理的衬底上提供360°圆形气体/真空分布。正在加工的基板被支撑在加热且任选地冷却的基座组件上。衬底面向一体式气体分布面板，其连接到处理室真空环境外的RF电源。提供泵浦通道视图端口以验证和确认关于处理室内表面上的表面沉积程度的仪表读数。在处理过程中等离子体将存在的区域（除气体分布面板之外）的所有处理室壁表面均为陶瓷，因此具有很高的抗腐蚀性。基座是非阳极氧化的金属也被具有对准特征的松散配合的陶瓷表面覆盖，以保持基座的晶片支撑表面和正被处理的晶片之间的同心度。阀体包含在处理室的壁内，有助于减少可用于在真空通道表面中冷凝或冷却的挥发性工艺气体组分的冷凝的表面积，并且如果允许通过真空迁移回到处理室，则可污染处理室管道。

17. 发明申请

US20060191478A1 High density plasma CVD chamber 审中-公开
标题翻译：高密度等离子体CVD室
公开(公告)号：US20060191478A1
公开(公告)日：2006-08-31
申请号：US11414049
申请日：2006-04-27
申请人： Sudhir Gondhalekar , Tom Cho , Rolf Guenther , Shigeru Takehiro , Masayoshi Nohira , Tetsuya Ishikawa , Ndanka Mukuti
发明人： Sudhir Gondhalekar , Tom Cho , Rolf Guenther , Shigeru Takehiro , Masayoshi Nohira , Tetsuya Ishikawa , Ndanka Mukuti
IPC分类号： C23C16/00
CPC分类号： H01J37/32522 , C23C16/4401 , C23C16/507 , H01J37/321
摘要： The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is typically at least about 0.15, more desirably about 0.2-0.25.
摘要翻译：本发明涉及等离子体化学气相沉积室的设计，其提供了在基底上形成薄的CVD膜的更均匀的条件。在一个实施例中，用于处理半导体衬底的设备包括限定其中的等离子体处理区域的室。该室包括底部，侧壁和设置在侧壁顶部的圆顶。圆顶具有圆顶，并具有限定腔直径的侧部。顶部RF线圈设置在圆顶顶部上方。侧面RF线圈邻近圆顶的侧部设置。侧RF线圈通过线圈分离与顶部RF线圈间隔开。线圈分离与室直径的比率通常为至少约0.15，更期望为约0.2-0.25。

18. 发明申请

US20050172905A1 Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support 失效
标题翻译：用于减少沿着衬底支撑件的可移动轴夹带异物的装置
公开(公告)号：US20050172905A1
公开(公告)日：2005-08-11
申请号：US10775769
申请日：2004-02-05
申请人： Andrzej Kaszuba , Sophia Velastegui , Visweswaren Sivaramakrishnan , Pyongwon Yim , Mario Silvetti , Tom Cho , Indrajit Lahiri , Surinder Bedi
发明人： Andrzej Kaszuba , Sophia Velastegui , Visweswaren Sivaramakrishnan , Pyongwon Yim , Mario Silvetti , Tom Cho , Indrajit Lahiri , Surinder Bedi
IPC分类号： C23C16/00 , C23C16/44 , H01L21/00
CPC分类号： H01L21/67126 , C23C16/4401
摘要： In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.
摘要翻译：在一个实施例中，本发明是用于减少沿基板支撑件的可移动轴的颗粒捕获的保护环。在一个实施例中，保护环包括大致环形的保护环，其定位在形成在套筒内的步骤中，该套筒环绕轴。保护环被定位成基本上密封将轴与套筒分开的间隙，使得在间隙内行进或被捕获在间隙中的颗粒和异物的量显着减少。在另一个实施例中，保护环包括具有内周边和外周边的基部，连接到内周边的第一凸缘，联接到外周边的第二凸缘以及将第一凸缘与第二凸缘分开的连续通道。第一凸缘适于用作容纳轴的位移的弹簧。

19. 发明申请

US20080017115A1 APPARATUS FOR REDUCING ENTRAPMENT OF FOREIGN MATTER ALONG A MOVEABLE SHAFT OF A SUBSTRATE SUPPORT 失效
标题翻译：用于减少基板支撑的可移动轴的外来物件的形成的装置
公开(公告)号：US20080017115A1
公开(公告)日：2008-01-24
申请号：US11866505
申请日：2007-10-03
申请人： Andrzej Kaszuba , Sophia Velastegui , Visweswaren Sivaramakrishnan , Pyongwon Yim , Mario Silvetti , Tom Cho , Indrajit Lahiri , Surinder Bedi
发明人： Andrzej Kaszuba , Sophia Velastegui , Visweswaren Sivaramakrishnan , Pyongwon Yim , Mario Silvetti , Tom Cho , Indrajit Lahiri , Surinder Bedi
IPC分类号： C23C16/00
CPC分类号： H01L21/67126 , C23C16/4401
摘要： In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.
摘要翻译：在一个实施例中，本发明是用于减少沿基板支撑件的可移动轴的颗粒捕获的保护环。在一个实施例中，保护环包括大致环形的保护环，其定位在形成在套筒内的步骤中，该套筒环绕轴。保护环被定位成基本上密封将轴与套筒分开的间隙，使得在间隙内行进或被捕获在间隙中的颗粒和异物的量显着减少。在另一个实施例中，保护环包括具有内周边和外周边的基部，连接到内周边的第一凸缘，联接到外周边的第二凸缘和将第一凸缘与第二凸缘分开的连续通道。第一凸缘适于用作容纳轴的位移的弹簧。

20. 发明授权

US06192829B1 Antenna coil assemblies for substrate processing chambers 有权
标题翻译：用于衬底处理室的天线线圈组件
公开(公告)号：US06192829B1
公开(公告)日：2001-02-27
申请号：US09398746
申请日：1999-09-17
申请人： Michael P. Karazim , Tetsuya Ishikawa , Rudolf Gujer , Thomas Kring , Pavel Staryuk , Abhi Desai , Tom Cho , Michael Douglas
发明人： Michael P. Karazim , Tetsuya Ishikawa , Rudolf Gujer , Thomas Kring , Pavel Staryuk , Abhi Desai , Tom Cho , Michael Douglas
IPC分类号： C23C1600
CPC分类号： H01J37/321
摘要： The present invention provides exemplary antenna coil assemblies and substrate processing chambers using such assemblies. In one embodiment, an antenna coil assembly (100) for a substrate processing chamber includes an antenna coil (102) disposed in a frame (104). The frame includes a plurality of spaced apart tabs (120) around a periphery of the frame, with the coil coupled to the frame at the tabbed locations. At least one notch (122) is provided between each pair of adjacent tabs. The notches are adapted to facilitate thermal expansion and contraction of the frame at the notched locations to reduce stresses on the frame and coil connections.
摘要翻译：本发明提供使用这种组件的示例性天线线圈组件和衬底处理室。在一个实施例中，用于衬底处理室的天线线圈组件（100）包括设置在框架（104）中的天线线圈（102）。框架包括围绕框架的周边的多个间隔开的突片（120），线圈在标签位置处联接到框架。在每对相邻的突片之间提供至少一个凹口（122）。切口适于促进框架在缺口处的热膨胀和收缩，以减少框架和线圈连接处的应力。

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