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1. 发明授权

US5558717A CVD Processing chamber 失效
标题翻译： CVD加工室
公开(公告)号：US5558717A
公开(公告)日：1996-09-24
申请号：US348273
申请日：1994-11-30
申请人： Jun Zhao , Tom Cho , Charles Dornfest , Stefan Wolff , Kevin Fairbairn , Xin S Guo , Alex Schreiber , John M. White
发明人： Jun Zhao , Tom Cho , Charles Dornfest , Stefan Wolff , Kevin Fairbairn , Xin S Guo , Alex Schreiber , John M. White
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , C30B25/02 , H01J37/32 , H01L21/205 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/4401 , C23C16/4412 , C23C16/4586 , C23C16/46 , C23C16/463 , C30B25/02 , H01J37/32477 , H01J37/32724 , H01J37/32834 , H01L21/68742 , H01L21/68785 , H01J2237/022 , Y10S438/909
摘要： A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to an RF power supply outside the vacuum environment of the processing chamber. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces. All process chamber wall surfaces facing the region where plasma will be present during processing (except the gas distribution faceplate) are ceramic and therefore highly resistant to corrosion. The pedestal an un-anodized metal is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body is contained within the wall of the processing chamber helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber if allowed to migrate back to it through the vacuum piping.
摘要翻译：公开了一种处理室，其在正在处理的衬底上提供360°圆形气体/真空分布。正在加工的基板被支撑在加热且任选地冷却的基座组件上。衬底面向一体式气体分布面板，其连接到处理室真空环境外的RF电源。提供泵浦通道视图端口以验证和确认关于处理室内表面上的表面沉积程度的仪表读数。在处理过程中等离子体将存在的区域（除气体分布面板之外）的所有处理室壁表面均为陶瓷，因此具有很高的抗腐蚀性。基座是非阳极氧化的金属也被具有对准特征的松散配合的陶瓷表面覆盖，以保持基座的晶片支撑表面和正被处理的晶片之间的同心度。阀体包含在处理室的壁内，有助于减少可用于在真空通道表面中冷凝或冷却的挥发性工艺气体组分的冷凝的表面积，并且如果允许通过真空迁移回到处理室，则可污染处理室管道。

2. 发明授权

US5630917A Cleaning of a PVD chamber containing a collimator 失效
标题翻译：清洁包含准直仪的PVD室
公开(公告)号：US5630917A
公开(公告)日：1997-05-20
申请号：US367567
申请日：1995-01-03
申请人： Xin S. Guo
发明人： Xin S. Guo
IPC分类号： C23C14/00 , C23C14/34 , C23C14/56 , H01L21/203
CPC分类号： C23C14/345 , C23C14/34 , C23C14/564 , H01J37/32862 , H01J37/3447
摘要： When a collimator is employed between the target and a substrate support in a physical vapor deposition chamber, since the collimator is grounded to the chamber walls, the chamber becomes divided electrically, because the collimator acts as a barrier to the passage of the plasma. Thus a two step plasma cleaning process must be performed to remove native oxide and sputtered deposits on parts of the chamber, particularly when parts of the chamber are replaced or removed. The first plasma clean step is conventional and cleans the upper portion of the chamber including the upper surface of the collimator. A positive bias source is then connected to the substrate support and a second cleaning plasma generated between the collimator and the support which cleans the parts of the chamber below the collimator, including the bottom surface of the collimator.
摘要翻译：当在物理气相沉积室中的目标和基板支撑件之间采用准直器时，由于准直器被接地到室壁，所以室由于准直器作为等离子体通过的屏障而变得电气分开。因此，必须执行两步等离子体清洁工艺，以去除腔室部分上的天然氧化物和溅射沉积物，特别是当腔室的部分被更换或移除时。第一等离子体清洁步骤是常规的，并且清洁包括准直器的上表面的室的上部。然后将正偏压源连接到基板支撑件，以及在准直器和支撑件之间产生的第二清洁等离子体，其清洁准直器下方的包括准直仪底面的腔室部分。

3. 发明授权

US5549802A Cleaning of a PVD chamber containing a collimator 失效
公开(公告)号：US5549802A
公开(公告)日：1996-08-27
申请号：US328189
申请日：1994-10-24
申请人： Xin S. Guo
发明人： Xin S. Guo
IPC分类号： C23C14/00 , C23C14/34 , C23C14/56 , H01L21/203
CPC分类号： C23C14/345 , C23C14/34 , C23C14/564 , H01J37/32862 , H01J37/3447
摘要： When a collimator is employed between the target and a substrate support in a physical vapor deposition chamber, since the collimator is grounded to the chamber walls, the chamber becomes divided electrically, because the collimator acts as a barrier to the passage of the plasma. Thus a two step plasma cleaning process must be performed to remove native oxide and sputtered deposits on parts of the chamber, particularly when parts of the chamber are replaced or removed. The first plasma clean step is conventional and cleans the upper portion of the chamber including the upper surface of the collimator. A positive bias source is then connected to the substrate support and a second cleaning plasma generated between the collimator and the support which cleans the parts of the chamber below the collimator, including the bottom surface of the collimator.

4. 发明授权

US5538603A Apparatus and process for increasing uniformity of sputtering rate in sputtering apparatus 失效
标题翻译：用于提高溅射装置中溅射速度均匀性的装置和方法
公开(公告)号：US5538603A
公开(公告)日：1996-07-23
申请号：US326140
申请日：1994-10-19
申请人： Xin S. Guo
发明人： Xin S. Guo
IPC分类号： C23C14/34 , H01J37/34 , H01L21/203
CPC分类号： H01J37/3423 , C23C14/3407 , H01J37/34
摘要： An improvement in a sputter deposition apparatus and process for sputtering is described wherein the surface of the sputtering target, adjacent its outer edge, is provided with a taper which reduces the redeposition rate thereon of back scattered atoms previously sputtered from the target surface. When the sputtering apparatus includes a magnetron, the modified target acts to decrease the distance of the ions in the plasma from the magnetron to thereby increase the deposition rate adjacent the tapered portion of the target. The angle of the tapered portion of the target, with respect to the central portion of the target surface, must be at least about 30.degree., and preferably varies from about 35.degree. to about 70.degree., and most preferably from about 40.degree. to about 60.degree.. In a preferred embodiment, a second taper extends outwardly of the first taper to provide a more uniform gap between the outer edge of the target and the portion of the shield parallel to the wall of the sputtering apparatus. The angle of the second tapered surface will range from about 70.degree. to about 85.degree., with respect to the central portion of the target surface, preferably from about 75.degree. to about 83.degree., and typically from about 78.degree. to about 80.degree.. That is the angle of the outermost tapered surface on the sputtering target, with respect to a plane perpendicular to the central portion of the target surface, may vary from about 5.degree. to about 20.degree., preferably from about 7.degree. to about 15.degree., and typically from about 10.degree. to about 12.degree..
摘要翻译：描述了溅射沉积设备和溅射方法的改进，其中溅射靶的表面在其外边缘附近被提供有锥度，其减小了从靶表面溅射的背散射原子上的再沉积速率。当溅射装置包括磁控管时，改性靶用于减小等离子体中的离子与磁控管的距离，从而增加邻近靶的锥形部分的沉积速率。目标的锥形部分相对于目标表面的中心部分的角度必须为至少约30°，优选地在约35°至约70°，最优选约40°至约70°的范围内 60度。在优选实施例中，第二锥形部从第一锥形部向外延伸，以在靶材的外边缘和平行于溅射装置的壁的屏蔽部分之间提供更均匀的间隙。第二锥形表面的角度相对于靶表面的中心部分，优选为约75°至约83°，通常为约78°至约80°的范围为约70°至约85°。也就是说，溅射靶上的最外锥形表面相对于垂直于目标表面的中心部分的平面的角度可以在约5°至约20°，优选约7°至约15°的范围内变化，通常约10°至约12°。

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