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1. 发明申请

US20060191478A1 High density plasma CVD chamber 审中-公开
标题翻译：高密度等离子体CVD室
公开(公告)号：US20060191478A1
公开(公告)日：2006-08-31
申请号：US11414049
申请日：2006-04-27
申请人： Sudhir Gondhalekar , Tom Cho , Rolf Guenther , Shigeru Takehiro , Masayoshi Nohira , Tetsuya Ishikawa , Ndanka Mukuti
发明人： Sudhir Gondhalekar , Tom Cho , Rolf Guenther , Shigeru Takehiro , Masayoshi Nohira , Tetsuya Ishikawa , Ndanka Mukuti
IPC分类号： C23C16/00
CPC分类号： H01J37/32522 , C23C16/4401 , C23C16/507 , H01J37/321
摘要： The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is typically at least about 0.15, more desirably about 0.2-0.25.
摘要翻译：本发明涉及等离子体化学气相沉积室的设计，其提供了在基底上形成薄的CVD膜的更均匀的条件。在一个实施例中，用于处理半导体衬底的设备包括限定其中的等离子体处理区域的室。该室包括底部，侧壁和设置在侧壁顶部的圆顶。圆顶具有圆顶，并具有限定腔直径的侧部。顶部RF线圈设置在圆顶顶部上方。侧面RF线圈邻近圆顶的侧部设置。侧RF线圈通过线圈分离与顶部RF线圈间隔开。线圈分离与室直径的比率通常为至少约0.15，更期望为约0.2-0.25。

2. 发明授权

US07074298B2 High density plasma CVD chamber 失效
标题翻译：高密度等离子体CVD室
公开(公告)号：US07074298B2
公开(公告)日：2006-07-11
申请号：US10150581
申请日：2002-05-17
申请人： Sudhir Gondhalekar , Tom K. Cho , Rolf Guenther , Shigeru Takehiro , Masayoshi Nohira , Tetsuya Ishikawa , Ndanka O. Mukuti
发明人： Sudhir Gondhalekar , Tom K. Cho , Rolf Guenther , Shigeru Takehiro , Masayoshi Nohira , Tetsuya Ishikawa , Ndanka O. Mukuti
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32522 , C23C16/4401 , C23C16/507 , H01J37/321
摘要： The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is at least about 0.15, more desirably about 0.2–0.25.
摘要翻译：本发明涉及等离子体化学气相沉积室的设计，其提供了在基底上形成薄的CVD膜的更均匀的条件。在一个实施例中，用于处理半导体衬底的设备包括限定其中的等离子体处理区域的室。该室包括底部，侧壁和设置在侧壁顶部的圆顶。圆顶具有圆顶，并具有限定腔直径的侧部。顶部RF线圈设置在圆顶顶部上方。侧面RF线圈邻近圆顶的侧部设置。侧RF线圈通过线圈分离与顶部RF线圈间隔开。线圈分离与室直径的比率至少为约0.15，更优选为约0.2-0.25。

3. 发明授权

US07354501B2 Upper chamber for high density plasma CVD 失效
标题翻译：用于高密度等离子体CVD的上室
公开(公告)号：US07354501B2
公开(公告)日：2008-04-08
申请号：US10150458
申请日：2002-05-17
申请人： Sudhir Gondhalekar , Tom K. Cho , Rolf Guenther , Steve H. Kim , Mehrdad Moshfegh , Shigeru Takehiro , Thomas Kring , Tetsuya Ishikawa
发明人： Sudhir Gondhalekar , Tom K. Cho , Rolf Guenther , Steve H. Kim , Mehrdad Moshfegh , Shigeru Takehiro , Thomas Kring , Tetsuya Ishikawa
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/32522 , C23C16/507 , H01J37/321
摘要： The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a substantially flat dome top. A top RF coil is disposed above the dome top, and has an outer loop which is larger in size than the substrates to be processed in the chamber. A cold plate is disposed above the top RF coil, and is larger in size than the substrates to be processed in the chamber.
摘要翻译：本发明涉及一种等离子体CVD室的上室设计，其提供在衬底上形成薄CVD膜的更均匀的条件。本发明的实施例通过减少或最小化沉积和非沉积循环之间的圆顶上的温度波动来改善上室的温度控制并提高颗粒性能。根据本发明的一个方面，用于处理半导体衬底的设备包括限定其中的等离子体处理区域的室。该室包括底部，侧壁和设置在侧壁顶部的圆顶。圆顶具有基本平坦的圆顶。顶部RF线圈设置在圆顶顶部上方，并且具有比在腔室中要处理的基板尺寸更大的外环。冷板设置在顶部RF线圈上方，并且尺寸大于在腔室中要处理的基板。

4. 发明授权

US5893643A Apparatus for measuring pedestal temperature in a semiconductor wafer processing system 失效
标题翻译：用于测量半导体晶片处理系统中基座温度的装置
公开(公告)号：US5893643A
公开(公告)日：1999-04-13
申请号：US824099
申请日：1997-03-25
申请人： Ajay Kumar , Jeffrey Chinn , Shashank C. Deshmukh , Weinan Jiang , Brian Duda , Rolf Guenther , Bruce Minaee , Marco Mombelli , Mark Wiltse
发明人： Ajay Kumar , Jeffrey Chinn , Shashank C. Deshmukh , Weinan Jiang , Brian Duda , Rolf Guenther , Bruce Minaee , Marco Mombelli , Mark Wiltse
IPC分类号： G01J5/02 , G01J5/00 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/3065 , G01M15/00
CPC分类号： H01L21/67248 , H01L21/67103
摘要： Apparatus for measuring wafer support pedestal temperature in a semiconductor wafer processing system. The apparatus measures infrared energy emitted by the bottom of the pedestal via a tube having one end inserted in a bore through the underside of the cathode pedestal base. The distal end of the tube is coupled to a temperature sensor. Both the tube and temperature sensor are fitted with insulating sleeve adapters to suppress unwanted RF signals from coupling to the sensor.
摘要翻译：用于测量半导体晶片处理系统中的晶片支撑基座温度的装置。该装置测量由基座的底部发射的红外能量，该管的一端通过阴极基座的底面插入孔中。管的远端连接到温度传感器。管和温度传感器均配有绝缘套管适配器，以防止不必要的RF信号与传感器耦合。

5. 发明申请

US20130196432A1 BIOLOGICALLY ACTIVE MOLECULES FOR INFLUENCING VIRUS-, BACTERIA-, PARASITE-INFECTED CELLS AND/OR TUMOR CELLS AND METHOD FOR THE USE THEREOF 有权
标题翻译：用于影响病毒，细菌，寄生虫感染细胞和/或肿瘤细胞的生物活性分子及其使用方法
公开(公告)号：US20130196432A1
公开(公告)日：2013-08-01
申请号：US13522411
申请日：2011-01-11
申请人： Tobias Poehlmann , Rolf Guenther
发明人： Tobias Poehlmann , Rolf Guenther
IPC分类号： C12N15/113
CPC分类号： C12N15/113 , A61K31/7088 , A61K45/06 , A61K47/64 , A61K47/66 , B82Y5/00 , C12N15/111 , C12N2310/14 , C12N2310/3513 , C12N2320/31 , C12N2320/50 , A61K2300/00
摘要： The aim of the invention is to effectively inhibit virus-, bacteria-, or parasite-infected cells and tumor cells in a targeted manner, even in the case of mutations. According to the invention, biologically active molecules are administered, said biologically active molecules including at least one protease inhibitor for at least one specific target protease of the virus-, bacteria-, or parasite-infected cells and/or tumor cells and at least one peptide-inhibited siRNA, PNA or RNA, the peptide bond of which is broken by the at least one target protease for the purpose of activating the peptide-inhibited siRNA, PNA or RNA. The molecules are used, for example, to influence the gene expression of diseased and infected organs or cells.
摘要翻译：本发明的目的是即使在突变的情况下也能以有针对性的方式有效地抑制病毒，细菌或寄生虫感染的细胞和肿瘤细胞。根据本发明，施用生物活性分子，所述生物活性分子包括用于病毒，细菌或寄生虫感染的细胞和/或肿瘤细胞的至少一种特异性靶蛋白酶的至少一种蛋白酶抑制剂和至少一种肽抑制的siRNA，PNA或RNA，其肽键被至少一种靶蛋白酶破坏，以激活肽抑制的siRNA，PNA或RNA。例如，分子用于影响患病和感染的器官或细胞的基因表达。

6. 发明授权

US06367410B1 Closed-loop dome thermal control apparatus for a semiconductor wafer processing system 失效
标题翻译：用于半导体晶片处理系统的闭环圆顶热控制装置
公开(公告)号：US06367410B1
公开(公告)日：2002-04-09
申请号：US08947174
申请日：1997-10-08
申请人： Patrick Leahey , Jerry C. Chen , Richard E. Remington , Simon Yavelberg , Timothy Driscoll , Robert E. Ryan , Brian Hatcher , Rolf Guenther , Xueyu Qian
发明人： Patrick Leahey , Jerry C. Chen , Richard E. Remington , Simon Yavelberg , Timothy Driscoll , Robert E. Ryan , Brian Hatcher , Rolf Guenther , Xueyu Qian
IPC分类号： C23C16507
CPC分类号： H01L21/67103
摘要： A closed-loop, dome thermal control apparatus containing a high-volume fan, a heat exchange chamber, and an enclosure that encloses the fan and the heat exchange chamber. The fan blows air over a dome of a semiconductor wafer processing system and through the heat exchange chamber to uniformly control the temperature of a dome of a plasma chamber to prevent particle contamination of the wafer. The enclosure recirculates the temperature controlled air to the fan to form a closed-loop apparatus.
摘要翻译：一种包含大容量风扇，热交换室和封闭风扇和热交换室的外壳的闭环圆顶热控制装置。风扇将空气吹过半导体晶片处理系统的圆顶并通过热交换室，以均匀地控制等离子体室的圆顶的温度，以防止晶片的颗粒污染。外壳将温度受控的空气再循环到风扇以形成闭环装置。

7. 发明授权

US08267386B2 Pneumatically actuated area vacuum gripper 有权
标题翻译：气动区域真空夹具
公开(公告)号：US08267386B2
公开(公告)日：2012-09-18
申请号：US12509407
申请日：2009-07-24
申请人： Walter Schaaf , Thomas Eisele , Rolf Guenther , Tobias Stahl
发明人： Walter Schaaf , Thomas Eisele , Rolf Guenther , Tobias Stahl
IPC分类号： B25B11/00 , B25B1/00 , B25B3/00 , B25B1/22 , B25B7/00 , B23P19/00 , A47G21/10 , B25J15/06 , B25J15/02
CPC分类号： B65G47/91 , B65H3/0891 , B65H2406/3661 , Y10T29/53178
摘要： A pneumatically actuated area vacuum gripper for gripping and, if necessary, separating workpieces is provided by the present disclosure. In particular, the vacuum gripper is used with thin, flexible workpieces, and has a suction chamber, which has a suction wall with perforations, to be placed on the workpiece. An ejector nozzle has a connection and an outlet, the ejection nozzle being connected to the suction chamber via its connection, and the outlet of the ejector nozzle opening to the outside or into an exhaust air duct, and the suction inlet of the ejector nozzle empties into the suction chamber, whereby the direction of the air stream in the connection coming from the suction chamber corresponds to the direction of the main air conveyance in the ejector nozzle.
摘要翻译：通过本公开提供用于夹紧并且如果必要的话，分离工件的气动区域真空夹持器。特别地，真空夹具与薄而柔性的工件一起使用，并且具有吸入室，其具有带有穿孔的抽吸壁，以被放置在工件上。喷射器喷嘴具有连接和出口，喷嘴通过其连接连接到吸入室，喷射器喷嘴的出口通向外部或排放到排气管道中，并且喷射器喷嘴的吸入口排空进入吸入室，由此来自吸入室的连接中的空气流的方向对应于喷射器喷嘴中的主要空气输送的方向。

8. 发明授权

US07345759B2 Method and device for the measurement of chemical and/or biological samples 有权
标题翻译：用于测量化学和/或生物样品的方法和装置
公开(公告)号：US07345759B2
公开(公告)日：2008-03-18
申请号：US10380192
申请日：2001-08-22
申请人： Rolf Guenther , Leif Brand , Christian Eggeling , Karsten Gall , Claus Seidel
发明人： Rolf Guenther , Leif Brand , Christian Eggeling , Karsten Gall , Claus Seidel
IPC分类号： G01N21/64
CPC分类号： G01N21/6428 , G01N2021/6419 , G01N2021/6421 , G01N2021/6441
摘要： A device for the measurement of chemical and/or biological samples, in particular by means of luminescence spectroscopy, comprises an irradiation unit, a sample receiver, at least one optical unit and a detector unit. The color marker in the sample, which contains at least one color marker, is stimulated by irradiation into producing luminescence and gives off light. The light emitted by the color markers is detected by detectors in the detector unit. According to the invention, the measurement results may be improved by the irradiation unit generating pulsed irradiation. The irradiation unit is thus preferably controlled by a control unit in such a way that the irradiation pulses impinge on the sample in a temporal sequence.
摘要翻译：用于测量化学和/或生物样品，特别是通过发光光谱测量的装置包括照射单元，样品接收器，至少一个光学单元和检测器单元。包含至少一种颜色标记的样品中的颜色标记物被照射刺激以产生发光并发光。由颜色标记发出的光由检测器单元中的检测器检测。根据本发明，可以通过产生脉冲照射的照射单元改善测量结果。因此，照射单元优选地由控制单元控制，使得照射脉冲以时间顺序照射在样品上。

9. 发明申请

US20050257735A1 Method and apparatus for providing gas to a processing chamber 有权
标题翻译：用于向处理室提供气体的方法和装置
公开(公告)号：US20050257735A1
公开(公告)日：2005-11-24
申请号：US11146311
申请日：2005-06-06
申请人： Rolf Guenther
发明人： Rolf Guenther
IPC分类号： B01D7/00 , C23C16/448 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C23C16/4481 , B01D7/00
摘要： A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a unitary, isolatable, transportable canister having a plurality of first spacing elements, a plurality of second spacing elements and a solid material disposed within the canister. The spacing elements have different mean diameters. The solid material is adapted to produce a gas vapor when exposed to a temperature above a predetermined level at a predetermined pressure. In another embodiment, an apparatus for generating gas includes a gas source coupled to a processing chamber by a first gas line. A canister is coupled in-line with the first gas line and contains a solid material that produces a process gas when heated. A heater is disposed between the gas source and the canister to heat gas flowing into the canister.
摘要翻译：提供了一种用于产生用于处理系统的气体的方法和装置。在一个实施例中，用于产生用于处理系统的气体的装置包括具有多个第一间隔元件，多个第二间隔元件和设置在所述罐内的固体材料的单一的可隔离的可移动的罐。间隔元件具有不同的平均直径。固体材料适于当以预定压力暴露于高于预定水平的温度时产生气体蒸气。在另一个实施例中，用于产生气体的装置包括通过第一气体管线连接到处理室的气体源。罐与第一气体管线连接在一起，并且包含在加热时产生工艺气体的固体材料。在气体源和罐之间设置加热器以加热流入罐中的气体。

10. 发明授权

US4228976A Main connector for an airfoil or wing 失效
标题翻译：翼型或机翼的主连接器
公开(公告)号：US4228976A
公开(公告)日：1980-10-21
申请号：US907405
申请日：1978-05-18
申请人： Max Eiselbrecher , Rolf Guenther , Helmut Jakob
发明人： Max Eiselbrecher , Rolf Guenther , Helmut Jakob
IPC分类号： B64C1/26 , B64C3/20 , B64C3/24
CPC分类号： B64C1/26
摘要： An airfoil or wing is connected to the body of an aircraft or spacecraft through a main connector comprising metal and nonmetal components. Tension load take-up loops and a pressure load take-up core are arranged or held in a metal grommet which in turn is centered relative to and integrated with a main connector bushing. Thus, the tension loads are solely introduced into the wing structure through the tension loops and pressure loads are taken up solely by the pressure core, whereby the advantages of fiber compound materials are optimally utilized.
摘要翻译：机翼或翼通过包括金属和非金属部件的主连接器连接到飞机或航天器的主体。张紧负载卷取环和压力负载卷取芯布置或保持在金属索环中，金属索环又相对于主连接器衬套相对并与其一体化。因此，张力负载通过张力回路单独引入机翼结构，压力负载仅由压芯吸收，由此纤维复合材料的优点得到最佳利用。

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