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1. 发明申请

US20060192150A1 Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to a large area electron beam 失效
标题翻译：用于在暴露于大面积电子束之后降低电介质涂覆的基底上的电荷密度的方法和装置
公开(公告)号：US20060192150A1
公开(公告)日：2006-08-31
申请号：US11414649
申请日：2006-04-27
申请人： Alexandros Demos , Khaled Elsheref , Yuri Trachuk , Tom Cho , Girish Dixit , Hichem M'Saad , Derek Witty
发明人： Alexandros Demos , Khaled Elsheref , Yuri Trachuk , Tom Cho , Girish Dixit , Hichem M'Saad , Derek Witty
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/317 , H01J2237/0041
摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.
摘要翻译：根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

2. 发明申请

US20050224722A1 Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to large area electron beam 审中-公开
标题翻译：用于在暴露于大面积电子束之后降低电介质涂覆的基底上的电荷密度的方法和装置
公开(公告)号：US20050224722A1
公开(公告)日：2005-10-13
申请号：US11002600
申请日：2004-12-01
申请人： Alexandros Demos , Khaled Elsheref , Yuri Trachuk , Tom Cho , Girish Dixit , Hichem M'Saad , Derek Witty
发明人： Alexandros Demos , Khaled Elsheref , Yuri Trachuk , Tom Cho , Girish Dixit , Hichem M'Saad , Derek Witty
IPC分类号： H01J37/317
CPC分类号： H01J37/317 , H01J2237/0041
摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.
摘要翻译：根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

3. 发明申请

US20050239293A1 POST TREATMENT OF LOW K DIELECTRIC FILMS 有权
标题翻译：低K电介质膜的后处理
公开(公告)号：US20050239293A1
公开(公告)日：2005-10-27
申请号：US10830203
申请日：2004-04-21
申请人： Zhenjiang Cui , Josephine Chang , Alexandros Demos , Reza Arghavani , Derek Witty , Helen Armer , Girish Dixit , Hichem M'Saad
发明人： Zhenjiang Cui , Josephine Chang , Alexandros Demos , Reza Arghavani , Derek Witty , Helen Armer , Girish Dixit , Hichem M'Saad
IPC分类号： H01L21/314 , H01L21/316 , H01L21/4763 , H01L21/26 , H01L21/31 , H01L21/324 , H01L21/42 , H01L21/469 , H01L21/477
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02351
摘要： A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.
摘要翻译：提供了一种在衬底上沉积低介电常数膜并对低介电常数膜进行后处理的方法。后处理包括将低介电常数膜快速加热到期望的高温，然后快速冷却低介电常数膜，使得低介电常数膜暴露于所需的高温约5秒或更短。一方面，后处理还包括将低介电常数膜暴露于电子束处理和/或UV辐射。

4. 发明申请

US20050186339A1 Methods and apparatuses promoting adhesion of dielectric barrier film to copper 审中-公开
标题翻译：促进介电阻挡膜对铜的粘附的方法和装置
公开(公告)号：US20050186339A1
公开(公告)日：2005-08-25
申请号：US10783316
申请日：2004-02-20
申请人： Nagarajan Rajagopalan , Bok Kim , Lester D'Cruz , Zhenjiang Cui , Girish Dixit , Visweswaren Sivaramakrishnan , Hichem M'Saad , Meiyee Shek , Li-Qun Xia
发明人： Nagarajan Rajagopalan , Bok Kim , Lester D'Cruz , Zhenjiang Cui , Girish Dixit , Visweswaren Sivaramakrishnan , Hichem M'Saad , Meiyee Shek , Li-Qun Xia
IPC分类号： C23C16/02 , C23C16/42 , C23C16/52 , H01L21/768 , C23C16/00 , H05H1/24
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/42
摘要： Adhesion between a copper metallization layer and a dielectric barrier film may be promoted by stabilizing a flow of a silicon-containing precursor in a divert line leading to the chamber exhaust. The stabilized gas flow is then introduced to the processing chamber to precisely form a silicide layer over the copper. This silicidation step creates a network of strong Cu—Si bonds that prevent delamination of the barrier layer, while not substantially altering the sheet resistance and other electrical properties of the resulting metallization structure.
摘要翻译：铜金属化层和电介质阻挡膜之间的粘附可以通过使通过室排气的转向管中的含硅前体的流动稳定而得到促进。然后将稳定的气流引入处理室，以在铜上精确地形成硅化物层。该硅化步骤产生强的Cu-Si键的网络，其防止阻挡层的分层，而基本上不改变所得金属化结构的薄层电阻和其它电性能。

5. 发明申请

US20120100188A1 SOLID STATE FORMS OF PALIPERIDONE SALTS AND PROCESS FOR THE PREPARATION THEREOF 审中-公开
标题翻译： PALIPERIDONE SALTS的固体状态及其制备方法
公开(公告)号：US20120100188A1
公开(公告)日：2012-04-26
申请号：US13318664
申请日：2010-05-25
申请人： Girish Dixit , Anil Shahaji Khile , Vignesh Nair , Nitin Sharadechandra Pradhan
发明人： Girish Dixit , Anil Shahaji Khile , Vignesh Nair , Nitin Sharadechandra Pradhan
IPC分类号： A61K31/519 , A61K9/14 , C07D471/04
CPC分类号： C07D471/04
摘要： Provided herein are solid state forms of paliperidone salts, processes for preparation, pharmaceutical compositions, and method of treating thereof. Paliperidone is represented by the following structural formula (I): More particularly, provided are solid state forms of paliperidone acid addition salts, wherein the acid counter ion is provided by an acid selected from the group consisting of L-(+)-tartaric acid, p-toluenesulfonic acid, maleic acid, oxalic acid, fumaric acid, acetic acid and malic acid. Provided also herein is a process for preparing substantially pure paliperidone free base using the solid state forms of paliperidone salts.
摘要翻译：本文提供的是利培酮盐的固态形式，制备方法，药物组合物及其处理方法。哌啶酮由以下结构式（I）表示：更具体地说，提供了帕培酮酸加成盐的固态形式，其中酸抗衡离子由选自下列的酸提供：L-（+） - 酒石酸，对甲苯磺酸，马来酸，草酸，富马酸，乙酸和苹果酸。本文还提供了使用固体形式的利培培酮盐制备基本上纯的利培酮游离碱的方法。

6. 发明申请

US20110142883A1 Amorphous Coprecipitates of Atorvastatin Pharmaceutically Acceptable Salts 审中-公开
标题翻译：阿托伐他汀药物可接受盐的无定形共沉淀物
公开(公告)号：US20110142883A1
公开(公告)日：2011-06-16
申请号：US12669543
申请日：2008-07-21
申请人： Girish Dixit , Anil Shahaji Khile , Nitin Sharadchandra Pradhan , Jon Valgeirsson
发明人： Girish Dixit , Anil Shahaji Khile , Nitin Sharadchandra Pradhan , Jon Valgeirsson
IPC分类号： A61K31/40 , A61K9/14 , A61P9/00 , A61P9/10
CPC分类号： C07D207/416 , A61K9/146 , A61K9/1635 , A61K31/40
摘要： The present invention relates to stable amorphous co-precipitates of atorvastatin pharmaceutically acceptable salts with pharmaceutically acceptable excipients, method for the preparation, pharmaceutical compositions, and method of treating thereof. Advantageously, the amorphous co-precipitates of atorvastatin pharmaceutically acceptable salts of the present invention have improved physiochemical characteristics that assist in the effective bioavailability
摘要翻译：本发明涉及阿托伐他汀药学上可接受的盐与药学上可接受的赋形剂的稳定无定形共沉淀物，制备方法，药物组合物及其治疗方法。有利地，本发明的阿托伐他汀药物可接受的盐的无定形共沉淀物具有改善的生理化学特征，其有助于有效的生物利用度

7. 发明申请

US20100278878A1 QUETIAPINE SALTS AND THEIR POLYMORPHS 失效
标题翻译： QUETIAPINE SALTS及其POLYMORPHS
公开(公告)号：US20100278878A1
公开(公告)日：2010-11-04
申请号：US12599085
申请日：2008-05-07
申请人： Girish Dixit , Anil Shahaji Khile , Jayesh Laljibhai Patel , Nitin Sharadchandra Pradhan , Jon Valgeirsson
发明人： Girish Dixit , Anil Shahaji Khile , Jayesh Laljibhai Patel , Nitin Sharadchandra Pradhan , Jon Valgeirsson
IPC分类号： A61K31/554 , C07D417/04 , A61K9/14 , A61P25/00
CPC分类号： C07D281/14
摘要： The present invention relates to novel and stable salt forms of quetiapine, processes for preparation, pharmaceutical compositions, and method of treating thereof. More particularly, the present invention provides novel acid addition salts of quetiapine wherein the acid counter ion is provided by an acid selected from the group consisting of benzene sulfonic acid, dibenzoyl-L-(+)-tartaric acid and di-p-toluoyl-L-(+)-tartaric acid. The present invention also provides novel polymorphic forms of quetiapine salts selected from the group consisting of quetiapine hydrobromide, quetiapine sulfate, quetiapine nitrate and quetiapine citrate.
摘要翻译：本发明涉及喹硫平的新颖稳定的盐形式，制备方法，药物组合物及其处理方法。更具体地说，本发明提供了喹硫平的新型酸加成盐，其中酸抗衡离子由选自苯磺酸，二苯甲酰基-L-（+） - 酒石酸和二对甲苯酰基 - L - （+） - 酒石酸。本发明还提供了选自喹硫平氢溴酸盐，硫酸喹硫平，硝酸喹硫平和柠檬酸喹硫平的新型多晶型盐酸喹硫平盐。

8. 发明申请

US20080109104A1 System, method, and medium for an endpoint detection scheme for copper low-dielectric damascene structures for improved dielectric and copper loss 有权
标题翻译：用于铜低介电镶嵌结构的端点检测方案的系统，方法和介质，用于改善电介质和铜损耗
公开(公告)号：US20080109104A1
公开(公告)日：2008-05-08
申请号：US12004730
申请日：2007-12-21
申请人： Ajoy Zutshi , Rahul Surana , Girish Dixit
发明人： Ajoy Zutshi , Rahul Surana , Girish Dixit
IPC分类号： G06F19/00 , G06F3/048 , G06F12/00 , G06F17/30
CPC分类号： B24B37/013 , B24B49/12 , G01N21/55 , H01L22/26
摘要： A system, method and medium of detecting a transition interface between a first dielectric material and an adjacent second dielectric material in a semiconductor wafer during a chemical-mechanical polishing process includes impinging an incident light of a predetermined wavelength on the semiconductor wafer at a first time, detecting at least one first intensity of at least one first reflected light, impinging the incident light of the predetermined wavelength on the semiconductor wafer at a second time, detecting at least one second intensity of at least one second reflected light, and determining a difference between the at least one first intensity and the at least one second intensity. If the difference between the at least one first intensity and the at least one second intensity is above a predetermined threshold, the chemical-mechanical polishing process is terminated.
摘要翻译：在化学机械抛光工艺期间检测半导体晶片中的第一介电材料和相邻的第二介电材料之间的过渡界面的系统，方法和介质包括在第一时间在半导体晶片上入射预定波长的入射光检测至少一个第一强度的至少一个第一反射光，在第二时间将预定波长的入射光照射在半导体晶片上，检测至少一个第二强度的至少一个第二反射光，并确定差异在所述至少一个第一强度和所述至少一个第二强度之间。如果所述至少一个第一强度和所述至少一个第二强度之间的差异高于预定阈值，则终止所述化学机械抛光处理。

9. 发明申请

US20080014280A1 Amorphous pregabalin and process for the preparation thereof 审中-公开
标题翻译：无定形普瑞巴林及其制备方法
公开(公告)号：US20080014280A1
公开(公告)日：2008-01-17
申请号：US11879405
申请日：2007-07-17
申请人： Bobba Kumar , Girish Dixit
发明人： Bobba Kumar , Girish Dixit
IPC分类号： A61K9/14 , A61K31/195 , C07C205/51
CPC分类号： C07C229/08 , A61K9/14 , A61K9/19 , A61K31/195
摘要： Pregabalin substantially in an amorphous form is disclosed. A composition comprising amorphous pregabalin in a solid form, wherein at least about 80% by weight of the solid is amorphous pregabalin in an amorphous form is also disclosed. The present invention also provides a process for preparing amorphous pregabalin substantially in an amorphous form by providing a solution of amorphous pregabalin in one or more solvents capable of dissolving the pregabalin and substantially removing the solvent from the solution.
摘要翻译：公布了基本上为无定形形式的普瑞巴林。包含固体形式的无定形普瑞巴林的组合物，其中至少约80重量％的固体是无定形形式的无定形普瑞巴林。本发明还提供了通过在一种或多种能够溶解普瑞巴林并基本上从溶液中除去溶剂的溶剂中提供无定形普瑞巴林溶液来制备基本上为无定形形式的无定形普瑞巴林的方法。

10. 发明申请

US20070082479A1 Chemical mechanical polishing techniques for integrated circuit fabrication 审中-公开
标题翻译：用于集成电路制造的化学机械抛光技术
公开(公告)号：US20070082479A1
公开(公告)日：2007-04-12
申请号：US11245677
申请日：2005-10-06
申请人： Deenesh Padhi , Girish Dixit
发明人： Deenesh Padhi , Girish Dixit
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76819 , H01L21/7684 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides methods for fabricating horizontal interconnect lines for use in semiconductor wafer fabrication. A dielectric layer is deposited on a dielectric stack having a planarized top surface. The dielectric layer is not planarized at this stage of the process. A pre-planarizing thickness profile of the non-planarized dielectric layer is determined and recorded. An interconnect line trench is then etched through the dielectric layer. A sandwich layer including a conductive Cu diffusion barrier layer and a Cu seed layer is deposited in the trench and on the dielectric layer. A Cu comprising metal is deposited in the sandwich lined trench. A Cu metal overburden is thereby deposited on the section of the sandwich layer that is positioned on the dielectric layer. A first CMP process is used to remove the Cu overburden and the Cu seed layer that is formed in the sandwich layer portion on the dielectric layer. A second CMP process is utilized wherein the pre-planarizing thickness profile is employed to remove the Cu barrier layer from the top surface of the dielectric layer, the second CMP process is then continued by planarizing the dielectric layer to form a substantially uniform flat surface having a substantially uniform thickness which is substantially equal to a predetermined design thickness. The second CMP process thereby results in fabricating a dielectric layer wherein substantially all interconnect lines have a substantially uniform thickness that is substantially equal to the design thickness for the dielectric layer.
摘要翻译：本发明提供用于制造用于半导体晶片制造的水平互连线的方法。介电层沉积在具有平坦化顶表面的电介质叠层上。在该过程的这个阶段，电介质层不被平坦化。确定并记录非平面化电介质层的预平面化厚度分布。然后通过介电层蚀刻互连线沟槽。包含导电性Cu扩散阻挡层和Cu籽晶层的夹层被沉积在沟槽和电介质层上。包含金属的Cu沉积在夹层衬里的沟槽中。因此，在位于电介质层上的夹层的部分上沉积Cu金属覆盖层。使用第一CMP工艺来去除在电介质层上的夹层结构部分中形成的Cu覆盖层和Cu籽晶层。使用第二CMP工艺，其中使用预平面化厚度轮廓来从电介质层的顶表面去除Cu阻挡层，然后通过平坦化介电层来继续进行第二CMP工艺以形成基本上均匀的平坦表面，其具有基本均匀的厚度，其基本上等于预定的设计厚度。因此，第二CMP工艺导致制造介电层，其中基本上所有的互连线具有基本上等于介电层的设计厚度的基本均匀的厚度。

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