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11. 发明授权

US08409352B2 Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus 失效
标题翻译：制造半导体器件的方法，制造衬底和衬底处理设备的方法
公开(公告)号：US08409352B2
公开(公告)日：2013-04-02
申请号：US13036330
申请日：2011-02-28
申请人： Koei Kuribayashi , Yoshinori Imai , Sadao Nakashima , Takafumi Sasaki
发明人： Koei Kuribayashi , Yoshinori Imai , Sadao Nakashima , Takafumi Sasaki
IPC分类号： C23C16/00 , C23C16/455
CPC分类号： H01L21/0262 , C23C16/325 , C23C16/45578 , H01L21/02529 , H01L21/67109
摘要： An apparatus including a reaction chamber in which substrates are stacked; a first gas supply nozzle installed in a region in which the substrates are stacked; a second gas supply nozzle installed in a different position; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the substrates, a line of which is branched in a direction of the second gas supply nozzle, and including a first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the substrates, a line of which is branched in a direction of the first gas supply nozzle, and including a second gas supply port; wherein the first gas supply port and the second gas supply port are installed adjacent to each other in a direction that the substrates are stacked.
摘要翻译：一种装置，包括堆叠基板的反应室; 安装在基板堆叠的区域中的第一气体供给喷嘴; 安装在不同位置的第二气体供给喷嘴; 第一分支喷嘴，其在与所述基板的主表面平行的方向上安装在所述第一气体供给喷嘴处，所述第一分支喷嘴的管线沿所述第二气体供给喷嘴的方向分支，并且包括第一气体供给口; 以及第二分支喷嘴，其沿着与所述基板的主表面平行的方向安装在所述第二气体供给喷嘴上，所述第二分支喷嘴的管线沿所述第一气体供给喷嘴的方向分支，并且包括第二气体供给口; 其中所述第一气体供给口和所述第二气体供给口沿着所述基板堆叠的方向彼此相邻地安装。

12. 发明申请

US20120214317A1 SUBSTRATE PROCESSING APPARATUS AND METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：基板加工装置和方法以及半导体装置制造方法
公开(公告)号：US20120214317A1
公开(公告)日：2012-08-23
申请号：US13399558
申请日：2012-02-17
申请人： Masaki Murobayashi , Takatomo Yamaguchi , Kenji Shirako , Shuhei Saido , Akihiro Sato , Yoshinori Imai
发明人： Masaki Murobayashi , Takatomo Yamaguchi , Kenji Shirako , Shuhei Saido , Akihiro Sato , Yoshinori Imai
IPC分类号： H01L21/31 , C23C16/52 , C23C16/455
CPC分类号： H01L21/67757 , C23C16/325 , C23C16/4408 , C23C16/45519 , C23C16/4584 , C23C16/46 , C23C16/463 , C23C16/54 , H01L21/67109
摘要： A substrate processing apparatus includes a processing chamber configured to process a plurality of substrates, a substrate holder accommodated within the processing chamber and configured to hold the substrates in a vertically spaced-apart relationship, a thermal insulation portion configured to support the substrate holder from below within the processing chamber, a heating unit provided to surround a substrate accommodating region within the processing chamber, and a gas supply system configured to supply a specified gas to at least a thermal insulation portion accommodating region within the processing chamber.
摘要翻译：衬底处理设备包括：处理室，被配置为处理多个衬底;衬底保持器，容纳在处理室内并且被构造成以垂直间隔的关系保持衬底;热绝缘部分，被配置为从下面支撑衬底保持器在处理室内设置有用于围绕处理室内的基板容纳区域的加热单元，以及构造成将特定气体供给至少处理室内的绝热部分容纳区域的气体供给系统。

13. 发明申请

US20100330781A1 SUBSTRATE PROCESSING APPARATUS , METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SUBSTRATE 有权
标题翻译：基板加工装置，制造半导体装置的方法和制造基板的方法
公开(公告)号：US20100330781A1
公开(公告)日：2010-12-30
申请号：US12825005
申请日：2010-06-28
申请人： Takafumi SASAKI , Sadao NAKASHIMA , Yoshinori IMAI , Koei KURIBAYASHI
发明人： Takafumi SASAKI , Sadao NAKASHIMA , Yoshinori IMAI , Koei KURIBAYASHI
IPC分类号： H01L21/20 , C23C16/54
CPC分类号： H01L21/0262 , C23C16/325 , C23C16/4412 , C23C16/45514 , C23C16/45578 , C23C16/54 , C30B25/165 , C30B29/36 , H01L21/02529
摘要： There are provided a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of manufacturing a substrate, for growing a SiC epitaxial film at a high-temperature condition. The substrate processing apparatus comprises: a reaction chamber; a first gas supply system configured to supply at least a gas containing silicon atoms and a gas containing chlorine atoms, or a gas containing silicon and chlorine atoms; a second gas supply system configured to supply at least a reducing gas; a third gas supply system configured to supply at least a gas containing carbon atoms; a first gas supply nozzle connected to the first gas supply system or the first and third gas supply systems; a second gas supply nozzle connected to the second gas supply system or the second and third gas supply systems; and a controller configured to control the first to third gas supply systems.
摘要翻译：提供了一种用于在高温条件下生长SiC外延膜的衬底处理装置，半导体器件的制造方法和制造衬底的方法。基板处理装置包括：反应室; 第一气体供给系统，其配置为至少供给含有硅原子的气体和含有氯原子的气体，或者含有硅和氯原子的气体; 配置成供给至少一种还原气体的第二气体供给系统; 第三气体供给系统，被配置为至少提供含有碳原子的气体; 连接到第一气体供应系统或第一和第三气体供应系统的第一气体供应喷嘴; 连接到第二气体供应系统或第二和第三气体供应系统的第二气体供应喷嘴; 以及控制器，被配置为控制第一至第三气体供应系统。

14. 发明授权

US08580671B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08580671B2
公开(公告)日：2013-11-12
申请号：US13461438
申请日：2012-05-01
申请人： Sadayoshi Horii , Yoshinori Imai , Mika Karasawa
发明人： Sadayoshi Horii , Yoshinori Imai , Mika Karasawa
IPC分类号： H01L21/44
CPC分类号： C23C16/0281 , C23C16/409 , H01L21/3141 , H01L21/31691 , H01L28/55
摘要： A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminum, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminum, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.
摘要翻译：本发明的半导体装置的制造方法包括：形成含有选自铪，钇，镧，铝，锆，锶，钛等的至少一种以上的元素的金属氧化物膜的第一工序，钡，钽，铌，在表面形成有金属薄膜的基板上，在不会发生金属薄膜氧化的第一温度下，将金属氧化物膜设定为非晶态; 以及在形成的金属氧化物膜上形成含有选自铪，钇，镧，铝，锆，锶，钛，钡，钽，铌中的至少一种以上的元素的金属氧化物膜的第二工序在第一步骤中，在超过第一温度的第二温度下达到目标膜厚度。

15. 发明申请

US20110212599A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS 失效
标题翻译：制造半导体器件的方法，制造衬底和衬底加工装置的方法
公开(公告)号：US20110212599A1
公开(公告)日：2011-09-01
申请号：US13036330
申请日：2011-02-28
申请人： Koei Kuribayashi , Yoshinori Imai , Sadao Nakashima , Takafumi Sasaki
发明人： Koei Kuribayashi , Yoshinori Imai , Sadao Nakashima , Takafumi Sasaki
IPC分类号： H01L21/20 , C23C16/455 , C23C16/458 , H01L21/00
CPC分类号： H01L21/0262 , C23C16/325 , C23C16/45578 , H01L21/02529 , H01L21/67109
摘要： Provided is a method of manufacturing a semiconductor device using a substrate processing apparatus including a reaction chamber in which a plurality of substrates are stacked at a predetermined distance; a first gas supply nozzle installed to extend to a region in which the plurality of substrates are stacked; a second gas supply nozzle installed to extend to a different position from a position at which the first gas supply nozzle is installed in the region in which the plurality of substrates are stacked; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the second gas supply nozzle, and including at least one first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the first gas supply nozzle, and including at least one second gas supply port; wherein the first gas supply port and the second gas supply port are installed adjacent to each other in a direction that the plurality of substrates are stacked, the method including the steps of: loading the plurality of substrates into the reaction chamber; and forming SiC films by supplying at least a silicon-containing gas and a chlorine-containing gas or a silicon/chlorine-containing gas through the first gas supply port and supplying at least a carbon-containing gas and a reduction gas through the second gas supply port.
摘要翻译：提供一种使用基板处理设备制造半导体器件的方法，该基板处理设备包括其中多个基板以预定距离堆叠的反应室; 第一气体供给喷嘴，其安装成延伸到所述多个基板堆叠的区域; 第二气体供给喷嘴，其安装成在与堆叠所述多个基板的区域中延伸到与所述第一气体供给喷嘴的位置不同的位置; 第一分支喷嘴，其安装在所述第一气体供给喷嘴的平行于所述多个基板的主表面的方向上，所述第一分支喷嘴的至少一条线沿所述第二气体供给喷嘴的方向分支，并且包括至少一个第一气体供应港口; 以及第二分支喷嘴，其在与所述多个基板的主表面平行的方向上安装在所述第二气体供给喷嘴处，所述第二分支喷嘴的至少一条线沿所述第一气体供给喷嘴的方向分支，并且包括至少一个第二喷嘴供气口; 其特征在于，所述第一气体供给口和所述第二气体供给口沿所述多个基板层叠的方向彼此相邻地安装，所述方法包括以下步骤：将所述多个基板装载到所述反应室中; 以及通过经由所述第一气体供给口至少供给含硅气体和含氯气体或含硅/氯气体而形成SiC膜，并且通过所述第二气体供给至少含碳气体和还原气体供应口。

16. 发明申请

US20100297832A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件制造方法，基板处理装置，基板制造方法
公开(公告)号：US20100297832A1
公开(公告)日：2010-11-25
申请号：US12782090
申请日：2010-05-18
申请人： Yoshinori IMAI , Hideji SHIBATA , Takafumi SASAKI
发明人： Yoshinori IMAI , Hideji SHIBATA , Takafumi SASAKI
IPC分类号： H01L21/205 , C23C16/32 , C23C16/455
CPC分类号： H01L21/205 , C23C16/325 , C23C16/4401 , C23C16/45574 , C30B25/14 , C30B25/165 , C30B29/36 , H01L21/02529 , H01L21/0262
摘要： Provided is a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate manufacturing method. The substrate processing apparatus comprises: a reaction chamber configured to process substrates; a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine; a first gas supply unit connected to the first gas supply system; a second gas supply system configured to supply at least a reducing gas; a second gas supply unit connected to the second gas supply system; a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit; and a control unit configured to control the first to third gas supply systems.
摘要翻译：提供了一种基板处理装置，半导体装置制造方法和基板制造方法。基板处理装置包括：被配置为处理基板的反应室; 配置为至少提供含硅气体和含氯气体或至少含有硅和氯的气体的第一气体供给系统; 连接到第一气体供应系统的第一气体供应单元; 构造成供给至少一种还原气体的第二气体供给系统; 连接到第二气体供应系统的第二气体供应单元; 第三气体供给系统，被配置为至少提供含碳气体，并连接到所述第一气体供给单元和所述第二气体供给单元中的至少一个; 以及控制单元，被配置为控制所述第一至第三气体供应系统。

17. 发明申请

US20120322254A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20120322254A1
公开(公告)日：2012-12-20
申请号：US13461438
申请日：2012-05-01
申请人： Sadayoshi HORII , Yoshinori IMAI , Mika YAMAGUCHI
发明人： Sadayoshi HORII , Yoshinori IMAI , Mika YAMAGUCHI
IPC分类号： H01L21/283
CPC分类号： C23C16/0281 , C23C16/409 , H01L21/3141 , H01L21/31691 , H01L28/55
摘要： A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.
摘要翻译：本发明的半导体装置的制造方法包括：形成含有选自铪，钇，镧，铝，锆，锶，钛等的至少一种以上的元素的金属氧化物膜的第一工序，钡，钽，铌，在表面形成有金属薄膜的基板上，在不会发生金属薄膜氧化的第一温度下，将金属氧化物膜设定为非晶态; 以及在形成的金属氧化物膜上形成含有选自铪，钇，镧，铝，锆，锶，钛，钡，钽，铌中的至少一种以上的元素的金属氧化物膜的第二工序在第一步骤中，在超过第一温度的第二温度下达到目标膜厚度。

18. 发明授权

US08026159B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08026159B2
公开(公告)日：2011-09-27
申请号：US12230396
申请日：2008-08-28
申请人： Sadayoshi Horii , Yoshinori Imai
发明人： Sadayoshi Horii , Yoshinori Imai
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/3141 , C23C16/409 , C23C16/4401 , C23C16/4412 , C23C16/45531 , C23C16/45534 , C23C16/45561 , C23C16/45565 , H01L21/31691
摘要： A method of manufacturing a semiconductor device includes the steps of loading a substrate into a processing chamber; processing the substrate by supplying plural kinds of reaction substances into the processing chamber multiple number of times; and unloading the processed substrate from the processing chamber, wherein at least one of the plural kinds of reaction substances contains a source gas obtained by vaporizing a liquid source by a vaporizing part; in the step of processing the substrate, vaporizing operation of supplying the liquid source to the vaporizing part and vaporizing the liquid source is intermittently performed, and at least at a time other than performing the vaporizing operation of the liquid source, a solvent capable of dissolving the liquid source is flown to the vaporizing part at a first flow rate; and at a time other than performing the vaporizing operation of the liquid source and every time performing the vaporizing operation of the liquid source prescribed number of times, the solvent is flown to the vaporizing part at a second flow rate larger than the first flow rate.
摘要翻译：制造半导体器件的方法包括将衬底装载到处理室中的步骤; 通过将多种反应物质多次加入到处理室来处理基板; 从所述处理室卸载所述处理过的基板，其中，所述多种反应物质中的至少一种含有通过汽化部使液体源蒸发得到的源气体; 在处理基板的步骤中，间歇地进行将液体源供给到蒸发部分并使液体源蒸发的蒸发操作，并且至少在除了进行液体源的蒸发操作之外的时间，能够溶解的溶剂液体源以第一流量流到汽化部分; 并且除了执行液体的蒸发操作之外，并且每当执行液体源的蒸发操作规定次数时，溶剂以大于第一流量的第二流量流动到汽化部分。

19. 发明申请

US20090061648A1 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US20090061648A1
公开(公告)日：2009-03-05
申请号：US12230396
申请日：2008-08-28
申请人： Sadayoshi Horii , Yoshinori Imai
发明人： Sadayoshi Horii , Yoshinori Imai
IPC分类号： H01L21/31 , B05C11/00
CPC分类号： H01L21/3141 , C23C16/409 , C23C16/4401 , C23C16/4412 , C23C16/45531 , C23C16/45534 , C23C16/45561 , C23C16/45565 , H01L21/31691
摘要： A method of manufacturing a semiconductor device includes the steps of loading a substrate into a processing chamber; processing the substrate by supplying plural kinds of reaction substances into the processing chamber multiple number of times; and unloading the processed substrate from the processing chamber, wherein at least one of the plural kinds of reaction substances contains a source gas obtained by vaporizing a liquid source by a vaporizing part; in the step of processing the substrate, vaporizing operation of supplying the liquid source to the vaporizing part and vaporizing the liquid source is intermittently performed, and at least at a time other than performing the vaporizing operation of the liquid source, a solvent capable of dissolving the liquid source is flown to the vaporizing part at a first flow rate; and at a time other than performing the vaporizing operation of the liquid source and every time performing the vaporizing operation of the liquid source prescribed number of times, the solvent is flown to the vaporizing part at a second flow rate larger than the first flow rate.
摘要翻译：制造半导体器件的方法包括将衬底装载到处理室中的步骤; 通过将多种反应物质多次加入到处理室来处理基板; 从所述处理室卸载所述处理过的基板，其中，所述多种反应物质中的至少一种含有通过汽化部使液体源蒸发得到的源气体; 在处理基板的步骤中，间歇地进行将液体源供给到蒸发部分并使液体源蒸发的蒸发操作，并且至少在除了执行液体源的蒸发操作之外的时间，能够溶解的溶剂液体源以第一流量流到汽化部分; 并且除了执行液体的蒸发操作之外，并且每当执行液体源的蒸发操作规定次数时，溶剂以大于第一流量的第二流量流动到汽化部分。

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