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11. 发明授权

US5426070A Microstructures and high temperature isolation process for fabrication thereof 失效
标题翻译：微结构和高温隔离制程
公开(公告)号：US5426070A
公开(公告)日：1995-06-20
申请号：US67089
申请日：1993-05-26
申请人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
发明人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
IPC分类号： B81B1/00 , G01P15/08 , H01L21/44
CPC分类号： B81C1/0015 , G01P15/0802
摘要： A method of fabricating released microelectromechanical and microoptomechanical structures having electrically isolating segments from single crystal silicon includes thermal oxidation steps. The structures are defined using a single mask patterning process, and the structure is partially thermally oxidized. This is followed by a second masking step which is used to define segments to be completely thermally oxidized, and a second oxidation step completes the fabrication of the isolating segment. Thereafter the structure is released from the underlying substrate.
摘要翻译：制造具有与单晶硅电隔离段的释放的微机电和微机电结构的方法包括热氧化步骤。使用单个掩模图案化工艺限定结构，并且该结构被部分热氧化。之后是第二掩蔽步骤，其用于限定待完全热氧化的段，第二氧化步骤完成隔离段的制造。此后，结构从下面的基底释放。

12. 发明授权

US5397904A Transistor microstructure 失效
标题翻译：晶体管微结构
公开(公告)号：US5397904A
公开(公告)日：1995-03-14
申请号：US906873
申请日：1992-07-02
申请人： Susanne C. Arney , Noel C. MacDonald , Jun J. Yao
发明人： Susanne C. Arney , Noel C. MacDonald , Jun J. Yao
IPC分类号： H01L29/06 , H01L29/423 , H01L29/73 , H01L29/786
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/42384 , H01L29/7317 , H01L29/78654 , H01L29/78696
摘要： A method for isolating transistors and a microstructure for providing isolation for transistors includes a beam located on a substrate. The beam is formed from the same material as the substrate, preferably single crystal silicon, and is released so as to be suspended in the cavity and spaced apart from the substrate. The beam is supported in the cavity by a cantilever structure or by spaced pedestals, or both. One or more transistors are fabricated in the beam, and are thus isolated from the substrate and may be isolated from each other if desired. Contact beams may also be provided to contact the transistor electrodes for interconnection of adjacent transistors or connection of the transistors to electrical circuitry on the substrate. The contact beams also provide mechanical support for the beams.Multiple beams in side-by-side arrays or stacked arrays may be provided.
摘要翻译：用于隔离晶体管的方法和用于提供晶体管隔离的微结构包括位于衬底上的光束。光束由与衬底相同的材料形成，优选为单晶硅，并且被释放以便悬挂在空腔中并与衬底间隔开。梁通过悬臂结构或间隔开的支座或两者支撑在腔体中。一个或多个晶体管制造在光束中，并且因此与衬底隔离，并且如果需要可以彼此隔离。还可以提供接触光束以接触晶体管电极，用于相邻晶体管的互连或将晶体管连接到衬底上的电路。接触梁还为梁提供机械支撑。可以提供并排阵列或堆叠阵列中的多个光束。

13. 发明授权

US5393375A Process for fabricating submicron single crystal electromechanical structures 失效
标题翻译：制造亚微米单晶机电结构的工艺
公开(公告)号：US5393375A
公开(公告)日：1995-02-28
申请号：US171965
申请日：1993-12-22
申请人： Noel C. MacDonald , Zhoying L. Zhang , Gyorgy A. Porkolab
发明人： Noel C. MacDonald , Zhoying L. Zhang , Gyorgy A. Porkolab
IPC分类号： B44C1/22 , B81C1/00 , H01L21/764
CPC分类号： B81C1/00531 , B82Y15/00 , Y10S148/135
摘要： A process for fabricating submicron movable mechanical structures utilizes chemically assisted ion beam etching and reactive ion etching which are independent of crystal orientation. The process provides released mechanical structures which may be of the same material or of different materials than the surrounding substrate, and a nitride coating may be provided on the released structure for optical applications.
摘要翻译：用于制造亚微米可移动机械结构的方法利用与晶体取向无关的化学辅助离子束蚀刻和反应离子蚀刻。该方法提供释放的机械结构，其可以是与周围基底相同的材料或不同的材料，并且可以在用于光学应用的释放结构上提供氮化物涂层。

14. 发明授权

US5363021A Massively parallel array cathode 失效
标题翻译：大容量并联阵列阴极
公开(公告)号：US5363021A
公开(公告)日：1994-11-08
申请号：US089821
申请日：1993-07-12
申请人： Noel C. MacDonald
发明人： Noel C. MacDonald
IPC分类号： H01J3/02 , H01J9/02 , H01J31/12 , H01J29/70 , H01J29/72
CPC分类号： H01J9/025 , H01J3/022 , H01J31/127
摘要： A massively parallel electron beam array for controllably imaging a target includes a multiplicity of emitter cathodes, each incorporating one or more micron-sized emitter tips. Each tip is controlled by a control electrode to produce an electron stream, and its deflection is controlled by a multielement deflection electrode to permit scanning of a corresponding target region.
摘要翻译：用于可控地成像靶的大规模平行电子束阵列包括多个发射极阴极，每个发射极阴极包括一个或多个微米级的发射极尖端。每个尖端由控制电极控制以产生电子流，并且其偏转由多元件偏转电极控制以允许扫描相应的目标区域。

15. 发明授权

US5199917A Silicon tip field emission cathode arrays and fabrication thereof 失效
标题翻译：硅尖端场发射阴极阵列及其制造
公开(公告)号：US5199917A
公开(公告)日：1993-04-06
申请号：US803986
申请日：1991-12-09
申请人： Noel C. MacDonald , James P. Spallas
发明人： Noel C. MacDonald , James P. Spallas
IPC分类号： H01J9/02
CPC分类号： B82Y10/00 , H01J9/025
摘要： Through a silicon fabrication process, an emitter tip array is produced by electron beam or other suitable submicrometer scale lithography for precise location of the emitters. The emitter tips are formed by an oxidation process which ensures accurate and precise formation of tips having uniform radii. The process also utilizes the oxidation step to precisely align gate electrode apertures with respect to corresponding emitter tips so that large arrays can be formed with great accuracy and reliability.
摘要翻译：通过硅制造工艺，通过电子束或其他合适的亚微米级光刻产生发射极尖端阵列，用于发射器的精确定位。发射极尖端通过氧化工艺形成，其确保准确且准确地形成具有均匀半径的尖端。该方法还利用氧化步骤相对于相应的发射极尖端精确对准栅极电极孔，使得可以以高精度和可靠性形成大阵列。

16. 发明授权

US09688533B2 Using millisecond pulsed laser welding in MEMS packaging 有权
公开(公告)号：US09688533B2
公开(公告)日：2017-06-27
申请号：US13982427
申请日：2012-01-31
申请人： Payam Bozorgi , Noel C. MacDonald
发明人： Payam Bozorgi , Noel C. MacDonald
IPC分类号： H05K7/00 , B81C3/00 , B81C1/00 , H01L21/50 , H01L23/10 , B23K26/20 , B23K26/24 , H05K1/18 , B23K26/32 , B23K26/0622 , H01L23/00 , B23K103/14
CPC分类号： B81C3/001 , B23K26/0622 , B23K26/206 , B23K26/24 , B23K26/32 , B23K2103/14 , B81C1/00269 , B81C2203/0118 , B81C2203/038 , H01L21/50 , H01L23/10 , H01L24/97 , H01L2924/01019 , H01L2924/01065 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/1461 , H01L2924/16315 , H05K1/18 , H01L2924/00
摘要： A new packaging method for a wide range of MEMS for application on both the wafer and device scale. Titanium is used as the packaging material and both silicon and titanium MEMS devices are integrated on to a titanium substrate. A Nd:YAG pulsed laser is used to micro-weld the titanium cap to the substrate. A three-dimensional time dependent model of heat flow during laser beam welding is presented. The heat transfer and parametric design capabilities of COMSOL were employed for this purpose. Model calculations are compared and calibrated with experimental results of pulsed laser welds. The functionality and hermiticity of the proposed packaging was evaluated by packaging a self actuated Veeco Instrument AFM cantilever tip. The experimental measurements show that the resonance frequency and quality factor of the device stay the same before and after packaging and the applied technique has no effect on the device.

17. 发明申请

US20140126167A1 USING MILLISECOND PULSED LASER WELDING IN MEMS PACKAGING 有权
标题翻译：在MEMS包装中使用MILLISECOND脉冲激光焊接
公开(公告)号：US20140126167A1
公开(公告)日：2014-05-08
申请号：US13982427
申请日：2012-01-31
申请人： Payam Bozorgi , Noel C. MacDonald
发明人： Payam Bozorgi , Noel C. MacDonald
IPC分类号： B81C3/00 , H05K1/18 , B23K26/24
CPC分类号： B81C3/001 , B23K26/0622 , B23K26/206 , B23K26/24 , B23K26/32 , B23K2103/14 , B81C1/00269 , B81C2203/0118 , B81C2203/038 , H01L21/50 , H01L23/10 , H01L24/97 , H01L2924/01019 , H01L2924/01065 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/1461 , H01L2924/16315 , H05K1/18 , H01L2924/00
摘要： A new packaging method for a wide range of MEMS for application on both the wafer and device scale. Titanium is used as the packaging material and both silicon and titanium MEMS devices are integrated on to a titanium substrate. A Nd:YAG pulsed laser is used to micro-weld the titanium cap to the substrate. A three-dimensional time dependent model of heat flow during laser beam welding is presented. The heat transfer and parametric design capabilities of COMSOL were employed for this purpose. Model calculations are compared and calibrated with experimental results of pulsed laser welds. The functionality and hermiticity of the proposed packaging was evaluated by packaging a self actuated Veeco Instrument AFM cantilever tip. The experimental measurements show that the resonance frequency and quality factor of the device stay the same before and after packaging and the applied technique has no effect on the device.
摘要翻译：一种适用于晶圆和器件规模应用的广泛MEMS的新型封装方法。钛用作包装材料，硅和钛MEMS器件都集成在钛基板上。使用Nd：YAG脉冲激光将钛盖微焊接到基板上。提出了激光束焊接过程中热流三维时间依赖模型。为此，采用COMSOL的传热和参数设计能力。模型计算与脉冲激光焊接的实验结果进行比较和校准。通过包装自动驱动的Veeco仪器AFM悬臂尖端来评估所提出的包装的功能和隐性。实验测量结果表明，器件的共振频率和品质因数在包装前后保持不变，应用技术对设备无影响。

18. 发明申请

US20110120674A1 TITANIUM-BASED THERMAL GROUND PLANE 有权
标题翻译：基于TITANIUM的热地平面
公开(公告)号：US20110120674A1
公开(公告)日：2011-05-26
申请号：US13055111
申请日：2009-07-21
申请人： Noel C. MacDonald , Carl D. Meinhart , Changsong Ding , Payam Bozorgi , Gaurav Soni , Brian D. Piorek
发明人： Noel C. MacDonald , Carl D. Meinhart , Changsong Ding , Payam Bozorgi , Gaurav Soni , Brian D. Piorek
IPC分类号： F28D15/04 , B21D53/02
CPC分类号： F28D15/04 , F28D15/046 , H01L23/427 , H01L2924/0002 , Y10T29/4935 , H01L2924/00
摘要： Titanium-based thermal ground planes are described. A thermal ground plane in accordance with the present invention comprises a titanium substrate comprising a plurality of pillars, wherein the plurality of Ti pillars can be optionally oxidized to form nanostructured titania coated pillars, and a vapor cavity, in communication with the plurality of titanium pillars, for transporting thermal energy from one region of the thermal ground plane to another region of the thermal ground plane.
摘要翻译：描述了钛基热接地平面。根据本发明的热接地平面包括包括多个柱的钛基底，其中可以任选地氧化多个Ti柱以形成纳米结构的二氧化钛涂覆的柱，以及与多个钛柱连通的蒸气腔用于将热能从热接地平面的一个区域传送到热接地平面的另一个区域。

19. 发明授权

US07457033B2 MEMS tunable vertical-cavity semiconductor optical amplifier 有权
标题翻译： MEMS可调垂直腔半导体光放大器
公开(公告)号：US07457033B2
公开(公告)日：2008-11-25
申请号：US11442100
申请日：2006-05-26
申请人： Garrett D. Cole , E. Staffan Björlin , Qi Chen , Noel C. MacDonald , John E. Bowers
发明人： Garrett D. Cole , E. Staffan Björlin , Qi Chen , Noel C. MacDonald , John E. Bowers
IPC分类号： H01S5/00 , H01S3/086 , H01S3/16 , H01S5/187 , H01S5/343
CPC分类号： H01S5/50 , H01S5/041 , H01S5/0607 , H01S5/1025 , H01S5/18305 , H01S5/18308 , H01S5/18358 , H01S5/18366
摘要： A MEMS-tunable semiconductor optical amplifier (SOA). A device in accordance with the present invention comprises a substrate, a first mirror, coupled to the substrate, a second mirror, an active region, coupled between the first and second mirror, and a microelectromechanical actuator, coupled to the second mirror, wherein a voltage is applied to the microelectromechanical actuator to tune the SOA.
摘要翻译： MEMS可调谐半导体光放大器（SOA）。根据本发明的装置包括耦合到第一反射镜和耦合在第一和第二反射镜之间的基板，耦合到基板的第一反射镜，第二反射镜，有源区和耦合到第二反射镜的微机电致动器，其中，电压被施加到微机电致动器以调谐SOA。

20. 发明授权

US07339244B2 Small scale wires with microelectromechanical devices 有权
标题翻译：小型电线与微机电装置
公开(公告)号：US07339244B2
公开(公告)日：2008-03-04
申请号：US11340135
申请日：2006-01-26
申请人： Kanakasabapathi Subramanian , Noel C. MacDonald
发明人： Kanakasabapathi Subramanian , Noel C. MacDonald
IPC分类号： H01L27/14 , H01L29/82
CPC分类号： B81C1/00142 , B81B2203/0361 , B81C1/00071 , B81C1/00111 , B81C2201/0112 , Y10S977/70 , Y10S977/762
摘要： A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.
摘要翻译：蚀刻和钝化化学物质之间的过程循环，以产生转变成小结构的粗糙侧壁。在一个实施例中，使用掩模来限定单晶硅晶片中的线。该过程在对应于循环的线的侧壁上产生波纹。在一个实施例中，线被氧化以形成对应于每个纹波的硅线。在另一个实施方案中去除氧化物以形成从微尖端到光线阵列的结构。通过氧化相邻的波纹侧壁形成流体通道。同样的掩模也用于形成用于MEMS器件的其它结构。

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