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1. 发明授权

US08559478B2 Hybrid silicon laser-quantum well intermixing wafer bonded integration platform for advanced photonic circuits with electroabsorption modulators 有权
公开(公告)号：US08559478B2
公开(公告)日：2013-10-15
申请号：US12355628
申请日：2009-01-16
申请人： Matthew N. Sysak , John E. Bowers , Alexander W. Fang , Hyundai Park
发明人： Matthew N. Sysak , John E. Bowers , Alexander W. Fang , Hyundai Park
IPC分类号： H01S5/026 , H01L27/14
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/021 , H01S5/0215 , H01S5/0217 , H01S5/026 , H01S5/06256 , H01S5/1014 , H01S5/1032 , H01S5/1209 , H01S5/3414
摘要： Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.

2. 发明申请

US20100096665A1 InGaAsSbN PHOTODIODE ARRAYS 有权
标题翻译： InGaAsSbN光电子阵列
公开(公告)号：US20100096665A1
公开(公告)日：2010-04-22
申请号：US12254634
申请日：2008-10-20
申请人： Michael MacDougal , Jonathan Geske , John E. Bowers
发明人： Michael MacDougal , Jonathan Geske , John E. Bowers
IPC分类号： H01L31/0304
CPC分类号： H01L31/105 , H01L31/03046 , H01L31/107 , Y02E10/544
摘要： Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 100 nanometers and is nominally lattice-matched to the indium phosphide substrate.
摘要翻译：公开了使用晶格匹配的光吸收层制成的检测器的实施例。根据本发明的一个或多个实施例的光电二极管装置包括磷化铟衬底和至少包含砷化铟镓锑氮化物（InGaAsSbN）层的光吸收区，其中所述InGaAsSbN层具有至少100纳米的厚度并且名义上与磷化铟基板晶格匹配。

3. 发明授权

US07142744B2 Wavelength power equalization by attenuation in an optical switch 有权
公开(公告)号：US07142744B2
公开(公告)日：2006-11-28
申请号：US11067030
申请日：2005-02-24
申请人： Tony Walter , Dan Blumenthal , John E. Bowers , Peter Hunt , Roger J. Helkey , Xuezhe Zheng
发明人： Tony Walter , Dan Blumenthal , John E. Bowers , Peter Hunt , Roger J. Helkey , Xuezhe Zheng
IPC分类号： G02B6/35 , G02B6/00
CPC分类号： G02B6/3588 , G02B6/266 , G02B6/3512 , G02B6/3518 , G02B6/3556 , G02B6/356 , G02B6/3594 , H04Q11/0005 , H04Q2011/0024 , H04Q2011/0026 , H04Q2011/003 , H04Q2011/0039 , H04Q2011/0049
摘要： A method for equalizing optical signal power in a group of optical signals transmitted through an optical switch in an optical transmission system. In one embodiment a group of optical signals is input into an optical switch having at least one movable mirror array with a plurality of reflectors formed thereon, the optical beam being directed onto a selected at least one reflector and wherein attenuating the optical beam is accomplished by controllably detuning at least one of the selected at least one reflector to attenuate the optical beam.

4. 发明授权

US06323414B1 Heterostructure thermionic coolers 有权
标题翻译：异质结构热离子冷却器
公开(公告)号：US06323414B1
公开(公告)日：2001-11-27
申请号：US09548011
申请日：2000-04-12
申请人： Ali Shakouri , John E. Bowers
发明人： Ali Shakouri , John E. Bowers
IPC分类号： H01L3530
CPC分类号： H01L29/861 , H01L29/205 , H01L29/267
摘要： A heterostructure thermionic cooler and a method for making thermionic coolers, employing a barrier layer of varying conduction bandedge for n-type material, or varying valence bandedge for p-type material, that is placed between two layers of material. The barrier layer has a high enough barrier for the cold side to only allow “hot” electrons, or electrons of high enough energy, across the barrier. The barrier layer is constructed to have an internal electric field such that the electrons that make it over the initial barrier are assisted in travel to the anode. Once electrons drop to the energy level of the anode, they lose energy to the lattice, thus heating the lattice at the anode. The barrier height of the barrier layer is high enough to prevent the electrons from traveling in the reverse direction.
摘要翻译：异质结构热离子冷却器和用于制造热离子冷却器的方法，使用放置在两层材料之间的用于n型材料的变化的导带的阻挡层或用于p型材料的变化的带状带。阻挡层具有足够高的阻挡层，用于冷侧仅允许穿过屏障的“热”电子或足够高能量的电子。阻挡层被构造成具有内部电场，使得使其超过初始屏障的电子被辅助到行进到阳极。一旦电子下降到阳极的能级，它们就会失去晶格的能量，从而在阳极处加热晶格。阻挡层的势垒高度足够高以防止电子沿相反方向传播。

5. 发明授权

US06277696B1 Surface emitting laser using two wafer bonded mirrors 失效
标题翻译：使用两个晶片粘合镜的表面发射激光
公开(公告)号：US06277696B1
公开(公告)日：2001-08-21
申请号：US08751038
申请日：1996-11-15
申请人： Kent W. Carey , Long Yang , John E. Bowers , Dubravko I. Babic , James J. Dudley
发明人： Kent W. Carey , Long Yang , John E. Bowers , Dubravko I. Babic , James J. Dudley
IPC分类号： H01L2120
CPC分类号： H01S5/1838 , H01S5/18305 , H01S5/18308 , H01S5/18341 , H01S5/2063
摘要： The present invention provides a vertical cavity surface emitting laser having high gain and high reflectivity in the desired wavelength range and good thermal and electrical conductivity. The laser structure is comprised of a first mirror region, a second mirror region, and an active region positioned between the first and second mirror regions. Unlike, prior VCSELs, the active region is fused to both the first mirror region and the second mirror region. This allows the laser designer to optimize laser performance for the desired wavelength range by allowing the choice of different materials for the first mirror region, the second mirror region, and the active region.
摘要翻译：本发明提供一种在所需波长范围内具有高增益和高反射率的垂直腔表面发射激光器以及良好的导热和导热性。激光器结构由第一反射镜区域，第二反射镜区域和位于第一和第二镜像区域之间的有源区域组成。与先前的VCSEL不同，有源区域融合到第一镜像区域和第二镜像区域两者。这允许激光设计者通过允许为第一镜面区域，第二镜面区域和有源区域选择不同的材料来优化所需波长范围的激光器性能。

6. 发明授权

US06208007B1 Buried layer in a semiconductor formed by bonding 有权
标题翻译：通过键合形成的半导体中的埋层
公开(公告)号：US06208007B1
公开(公告)日：2001-03-27
申请号：US09362538
申请日：1999-07-28
申请人： Dubravko Ivan Babic , John E. Bowers
发明人： Dubravko Ivan Babic , John E. Bowers
IPC分类号： H01L3100
CPC分类号： H01L31/18 , H01L29/66234 , H01L29/66242 , H01L29/66318 , H01S5/0207 , H01S5/0215 , H01S5/0217 , H01S5/18308 , H01S5/18316 , H01S5/18341 , H01S5/18369 , H01S5/1838 , H01S5/2072
摘要： Buried layers are formed within a semiconductor. Metallic or insulating buried layers are produced several microns within a semiconductor substrate. The buried layer can confine current to the buried layer itself by using a conductive material to create the buried layer. The buried layer can also confine current to a specified area of the semiconductor, by using an insulating material inside of the buried layer or by leaving a created void within the material. The buried layer is useful in the construction of a semiconductor Vertical Cavity Laser (VCL). A buried isolation layer confines the current to a narrow active region increasing efficiency of the VCL. The buried layer is also useful in fabricating discrete devices, such as diodes, transistors, and photodetectors, as well as fabricating integrated circuits.
摘要翻译：掩埋层形成在半导体内。金属或绝缘掩埋层在半导体衬底内产生几微米。掩埋层可以通过使用导电材料来形成掩埋层而将电流限制在埋层本身。掩埋层还可以通过在掩埋层内部使用绝缘材料或通过在材料内留下产生的空隙将电流限制在半导体的指定区域。掩埋层在半导体垂直腔激光器（VCL）的构造中是有用的。掩埋隔离层将电流限制在窄的有源区域，从而提高VCL的效率。掩埋层也可用于制造分立器件，例如二极管，晶体管和光电探测器，以及制造集成电路。

7. 发明授权

US6015980A Metal layered semiconductor laser 失效
标题翻译：金属层状半导体激光器
公开(公告)号：US6015980A
公开(公告)日：2000-01-18
申请号：US828372
申请日：1997-03-28
申请人： John E. Bowers , Daniel Abraham Tauber
发明人： John E. Bowers , Daniel Abraham Tauber
IPC分类号： H01L21/331 , H01L31/18 , H01L33/00
CPC分类号： H01L31/18 , H01L29/66234 , H01L29/66242 , H01L29/66318 , H01S5/18341 , H01S5/0207 , H01S5/0215 , H01S5/0217 , H01S5/18308 , H01S5/18316 , H01S5/18369 , H01S5/1838 , H01S5/2072
摘要： By using fusion of a heat spreader layer, a large bandwidth, high power semiconductor laser can be fabricated. The use of multiple metals with low thermal resistance allows for higher power because heat flow is conducted away from the active region easily. The extraction of heat from the active region makes the resultant laser more stable with the capability for higher power outputs.
摘要翻译：通过使用散热器层的融合，可以制造大带宽的大功率半导体激光器。使用具有低热阻的多种金属允许更高的功率，因为热流易于远离有源区域传导。从有源区域提取热量使得所得到的激光器具有更高功率输出的能力。

8. 发明授权

US4572949A Fiber optic sensor for detecting very small displacements of a surface 失效
标题翻译：用于检测表面极小位移的光纤传感器
公开(公告)号：US4572949A
公开(公告)日：1986-02-25
申请号：US565091
申请日：1983-12-14
申请人： John E. Bowers , Gordon S. Kino
发明人： John E. Bowers , Gordon S. Kino
IPC分类号： G01D5/26 , G01H9/00 , H01J5/16
CPC分类号： G01H9/006 , G01D5/268
摘要： A light source (10) coupled to a first fiber optic waveguide (14) which is coupled by a first directional coupler (22) and a second directional coupler (24) to a second waveguide (20). The first waveguide (14) has a phase modulator (60), a delay loop (62) and a polarization controller (68) therein to cause a differential delay time T on counterpropagating coherent light waves phase modulated at a frequency 1.sub.M. The first directional coupler (22) has one part connected to a photodector (28) and the second directional coupler (24) has a probe (20D) coupled to the first fiber (14) and the second fiber (20). The probe directs light toward a surface (18) whereupon the counterpropagating waves are shifted in phase by an amount proportional to the amplitude of displacement of the surface 18.
摘要翻译： PCT No.PCT / US83 / 00533 Sec。 371日期：1983年12月14日 102（e）1983年12月14日日期PCT提交1983年4月13日PCT公布。出版物WO83 / 03684 日期：1983年10月27日。耦合到第一光纤波导（14）的光源（10），第一光纤波导（14）由第一定向耦合器（22）和第二定向耦合器（24）耦合到第二波导（20）。第一波导（14）在其中具有相位调制器（60），延迟环（62）和偏振控制器（68），以在以1M频率相位调制的反向传播相干光波上产生差分延迟时间T. 第一定向耦合器（22）具有连接到光电二极管（28）的一部分，而第二定向耦合器（24）具有耦合到第一光纤（14）和第二光纤（20）的探针（20D）。探针将光朝着表面（18）引导，于是反向传播波相移一个与表面18的位移幅度成比例的量。

9. 发明授权

US4366771A Mercury containment for liquid phase growth of mercury cadmium telluride from tellurium-rich solution 失效
公开(公告)号：US4366771A
公开(公告)日：1983-01-04
申请号：US308343
申请日：1981-10-05
申请人： John E. Bowers , Joseph L. Schmit
发明人： John E. Bowers , Joseph L. Schmit
IPC分类号： C30B19/04 , H01L21/368 , H01L31/18 , H01L21/208
CPC分类号： H01L31/1832 , C30B19/04 , C30B29/48 , H01L21/02562 , H01L21/02625 , H01L21/02628
摘要： Hg.sub.1-x Cd.sub.x Te is an important semiconductor for use in photovoltaic and photoconductive infrared photon detectors. Hg.sub.1-x Cd.sub.x Te can be grown by liquid phase epitaxy at atmospheric pressure from a Te-rich solution in which case the Hg vapor pressure is below 0.1 atm at 500.degree. C. This low vapor pressure makes possible the use of open-tube, slider growth techniques. The present invention describes a covered graphite slider system which provides an additional source of Hg, minimizes loss of Hg from the source wafer and virtually prevents loss of Hg from the (Hg.sub.1-x Cd.sub.x).sub.1-y Te.sub.y growth solution.

10. 发明授权

US4317689A Mercury containment for liquid phase growth of mercury cadmium telluride from tellurium-rich solution 失效
标题翻译：汞碲含量从碲溶液中液相生长汞碲化镉
公开(公告)号：US4317689A
公开(公告)日：1982-03-02
申请号：US170324
申请日：1980-07-18
申请人： John E. Bowers , Joseph L. Schmit
发明人： John E. Bowers , Joseph L. Schmit
IPC分类号： C30B19/04 , H01L21/208
CPC分类号： C30B19/04 , C30B29/48 , Y10S117/90 , Y10S117/906 , Y10S117/907
摘要： Hg.sub.1-x Cd.sub.x Te is an important semiconductor for use in photovoltaic and photoconductive infrared photon detectors. Hg.sub.1-x Cd.sub.x Te can be grown by liquid phase epitaxy at atmospheric pressure from a Te-rich solution in which case the Hg vapor pressure is below 0.1 atm at 500.degree. C. This low vapor pressure makes possible the use of open-tube, slider growth techniques. The present invention describes a covered graphite slider system which provides an additional source of Hg, minimizes loss of Hg from the source wafer and virtually prevents loss of Hg from the (Hg.sub.1-x Cd.sub.x).sub.1-y Te.sub.y growth solution.
摘要翻译： Hg1-xCdxTe是用于光伏和光电导红外光子探测器的重要半导体。 Hg1-xCdxTe可以在大气压下从富Te溶液中生长，在这种情况下，Hg蒸汽压力在500℃时低于0.1atm。这种低蒸气压使得可以使用开管，滑块生长技术本发明描述了一种覆盖的石墨滑块系统，其提供附加的Hg源，使来自源晶片的Hg的损失最小化，并且实际上防止（Hg1-xCdx）1-yTey生长溶液中Hg的损失。

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