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11. 发明授权

US06768118B2 Electron beam monitoring sensor and electron beam monitoring method 有权
标题翻译：电子束监测传感器和电子束监测方法
公开(公告)号：US06768118B2
公开(公告)日：2004-07-27
申请号：US10350188
申请日：2003-01-24
申请人： Yoshinori Nakayama , Yasunari Sohda , Hiroya Ohta , Norio Saitou , Masato Muraki , Masaki Takakuwa
发明人： Yoshinori Nakayama , Yasunari Sohda , Hiroya Ohta , Norio Saitou , Masato Muraki , Masaki Takakuwa
IPC分类号： H01J326
CPC分类号： H01J37/244 , H01J2237/24405 , H01J2237/31774
摘要： The present invention provides a beam monitoring sensor which can offer both high beam monitoring precision and high speed monitoring in a multi-electron beam writing system and a monitoring method using the same. In a Faraday cup for electron beam monitoring, tantalum or a heavy metal material having an atomic number larger than that of tantalum is used to provide a Faraday cup construction having a high aspect ratio. The micro Faraday cup permits electron beam monitoring having less beam leak to a high acceleration electron beam.
摘要翻译：本发明提供了一种能够在多电子束书写系统中提供远光监测精度和高速监测的光束监测传感器以及使用其的监测方法。在用于电子束监测的法拉第杯中，钽或重金属使用原子序数大于钽的材料来提供具有高纵横比的法拉第杯结构。微法拉第杯允许电子束监测具有较少的光束泄漏到高加速度电子束。

12. 发明授权

US06472674B1 Electron beam exposure system and method of manufacturing devices using the same 失效
标题翻译：电子束曝光系统及其制造方法
公开(公告)号：US06472674B1
公开(公告)日：2002-10-29
申请号：US09627789
申请日：2000-07-27
申请人： Masato Muraki
发明人： Masato Muraki
IPC分类号： H01J3730
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174 , H01J37/3177 , H01J2237/31762
摘要： An electron beam exposure system which includes a plurality of electron beam exposure apparatuses and achieves reduction in the memory of an electron beam exposure apparatus by eliminating data transfer/data conversion for each electron beam exposure apparatus. The plurality of electron beam exposure apparatuses of the electron beam exposure system deflect an electron beam on the basis of control data and expose a pattern onto an object to be exposed, and a data control device sends, on the basis of pattern information of a pattern to be exposed which is sent out from one of the electron beam exposure apparatuses, control data corresponding to the pattern to be exposed to the electron beam exposure apparatus which has sent the pattern information. Also disclosed is a method of manufacturing devices, which utilizes a plurality of electron beam exposure apparatuses.
摘要翻译：一种电子束曝光系统，其包括多个电子束曝光装置，并且通过消除每个电子束曝光装置的数据传送/数据转换来实现电子束曝光装置的存储器的减少。电子束曝光系统的多个电子束曝光装置基于控制数据偏转电子束，并将图案曝露在要曝光的对象上，数据控制装置根据图案的图案信息发送从电子束曝光装置之一发出的被曝光的控制数据对应于要发送图案信息的电子束曝光装置曝光的图案的控制数据。还公开了利用多个电子束曝光装置的制造装置的方法。

13. 发明授权

US06472672B1 Electron beam exposure apparatus and its control method 有权
标题翻译：电子束曝光装置及其控制方法
公开(公告)号：US06472672B1
公开(公告)日：2002-10-29
申请号：US09629902
申请日：2000-07-31
申请人： Masato Muraki
发明人： Masato Muraki
IPC分类号： H01J3730
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J37/3177 , H01J2237/31764
摘要： An electron beam exposure apparatus for drawing a pattern on an object to be exposed using a plurality of electron beams. The apparatus includes an electron beam source for emitting electrons, a plurality of elementary electron optical systems for respectively forming intermediate images of the electron source, a projection electron optical system for projecting the plurality of intermediate images onto the object to be exposed and an adjustment unit for dynamically adjusting sizes of dot patterns formed on the object to be exposed upon projection of the intermediate images in correspondence with fields to be exposed of the pattern to be drawn by exposure on the object to be exposed.
摘要翻译：一种电子束曝光装置，用于使用多个电子束在待曝光的物体上绘制图案。该装置包括用于发射电子的电子束源，用于分别形成电子源的中间图像的多个基本电子光学系统，用于将多个中间图像投影到待曝光的物体上的投射电子光学系统和调节单元用于动态地调整形成在待曝光物体上的点阵图形的大小，该中心图像对应于要暴露在被曝光物体上的要被绘制的图案曝光的场。

14. 发明授权

US06455211B1 Pattern transfer method and apparatus, and device manufacturing method 有权
标题翻译：图案转印方法和装置以及装置制造方法
公开(公告)号：US06455211B1
公开(公告)日：2002-09-24
申请号：US09243135
申请日：1999-02-03
申请人： Yoshikiyo Yui , Masato Muraki
发明人： Yoshikiyo Yui , Masato Muraki
IPC分类号： G03F900
CPC分类号： G03F9/7084 , G03F7/70425 , G03F9/7003
摘要： The joint precision of a transfer pattern is improved by correcting the relative positions between the partial transfer patterns on a transfer mask and a transfer medium. The positions of alignment marks for the partial transfer patterns on the transfer mask are measured (step 23), and the actual coordinate system of the alignment marks is calculated based on the measured positions (step 25). Parameters that represent the relative relationship between the actual coordinate system calculated in step 25 and a design coordinate system are calculated (step 26), and the transfer positions of the partial transfer patterns to the transfer medium are calculated based on the calculated parameters (step 29). After that, a mask stage and wafer stage are driven based on the transfer positions calculated in step 29 to sequentially transfer patterns by exposure (steps 34 to 40).
摘要翻译：通过校正转印掩模上的部分转印图案和转印介质之间的相对位置，改善了转印图案的联合精度。测量转印掩模上部分转印图案的对准标记的位置（步骤23），并根据测量位置计算对准标记的实际坐标系（步骤25）。计算表示在步骤25中计算的实际坐标系与设计坐标系之间的相对关系的参数（步骤26），并且基于所计算的参数计算部分转印图案到转印介质的转印位置（步骤29 ）。之后，基于步骤29中计算的传送位置驱动掩模台和晶片台，以通过曝光依次传送图案（步骤34至40）。

15. 发明授权

US06337485B1 Electron beam exposure apparatus and its control method 有权
标题翻译：电子束曝光装置及其控制方法
公开(公告)号：US06337485B1
公开(公告)日：2002-01-08
申请号：US09629893
申请日：2000-07-31
申请人： Masato Muraki
发明人： Masato Muraki
IPC分类号： H01J3730
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J37/3177 , H01J2237/31764
摘要： An electron beam exposure apparatus, which has an electron beam source for generating a plurality of electron beams, a projection electron optical system for projecting images formed by the plurality of electron beams onto an object to be exposed, a deflector for deflecting the plurality of electron beams, and a stage for moving the object to be exposed, and which sequentially exposes divided exposure fields obtained by dividing an exposure pattern in a moving direction of the stage while continuously moving the object to be exposed by the stage. The apparatus includes a deflection width adjustment unit for dynamically adjusting a minimum deflection width of the deflector in correspondence with the fields to be exposed of the exposure pattern and a moving velocity adjustment unit for dynamically adjusting moving velocities of the stage in units of divided exposure fields in correspondence with exposure times required for exposing the respective divided exposure fields while deflecting the plurality of electron beams by the deflector.
摘要翻译：具有用于产生多个电子束的电子束源的电子束曝光装置，用于将由多个电子束形成的图像投影到待曝光的物体上的投影电子光学系统，用于偏转多个电子的偏转器光束和用于移动要曝光的物体的台，并且依次曝光通过在舞台的移动方向上划分曝光图案而获得的分割曝光场，同时连续移动由舞台曝光的物体。该装置包括：偏转宽度调节单元，用于根据曝光图案的场来动态调整偏转器的最小偏转宽度;以及移动速度调节单元，用于以分割的曝光场为单位来动态地调整舞台的移动速度对应于在通过偏转器偏转多个电子束的同时暴露各个分割的曝光场所需的曝光时间。

16. 发明授权

US06323499B1 Electron beam exposure apparatus and method, and device manufacturing method 有权
标题翻译：电子束曝光装置及其制造方法
公开(公告)号：US06323499B1
公开(公告)日：2001-11-27
申请号：US09596052
申请日：2000-06-16
申请人： Masato Muraki , Susumu Gotoh
发明人： Masato Muraki , Susumu Gotoh
IPC分类号： G21K510
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3026 , H01J37/3177 , H01J2237/1534
摘要： An electron beam exposure apparatus which minimizes the influence of the space charge effect and aberrations of a reduction electron optical system, and simultaneously, increases the exposure area which can be exposed at once, thereby increasing the throughput. An electron beam exposure apparatus having a source for emitting an electron beam and a reduction electron optical system for reducing and projecting, on a target exposure surface, an image of the source, includes a correction electron optical system which is arranged between the source and the reduction electron optical system to form a plurality of intermediate images of the source along a direction perpendicular to the optical axis of the reduction electron optical system, and corrects in advance aberrations generated when the intermediate images are reduced and projected on the target exposure surface by the reduction electron optical system.
摘要翻译：减小电子光学系统的空间电荷效应和像差的影响最小化的电子束曝光装置，同时增加可以一次曝光的曝光面积，从而提高生产量。具有用于发射电子束的电子束曝光装置和用于在目标曝光表面上减少和投影源的图像的还原电子光学系统包括校正电子光学系统，其布置在源和还原电子光学系统，以沿着与还原电子光学系统的光轴垂直的方向形成源的多个中间图像，并且预先校正当中间图像被减少并投影在目标曝光表面上时的像差还原电子光学系统。

17. 发明授权

US5929454A Position detection apparatus, electron beam exposure apparatus, and methods associated with them 失效
标题翻译：位置检测装置，电子束曝光装置和与其相关的方法
公开(公告)号：US5929454A
公开(公告)日：1999-07-27
申请号：US873337
申请日：1997-06-11
申请人： Masato Muraki , Susumu Goto
发明人： Masato Muraki , Susumu Goto
IPC分类号： H01J37/304 , H01L21/027
CPC分类号： H01J37/3045 , H01J2237/30438 , H01J2237/31774
摘要： The position of an alignment mark is accurately detected independently of distortion of the sectional structure of the alignment mark or the coating state of a resist that covers the alignment mark. This invention provides a position detection apparatus for detecting the position of an alignment mark formed on an object using an electron beam, which has an element electron optical system array (3) for irradiating electron beams onto the object in a matrix, and a deflector (6) for deflecting the plurality of electron beams. The deflector (6) scans the plurality of electron beams on the alignment mark, a reflected electron detector (9) synthesizes and detects reflected electrons or secondary electrons from the alignment mark upon scanning, and the position of the alignment mark is determined on the basis of the displacement amount of the electron beams and the detection result.
摘要翻译：精确地检测对准标记的位置，而不管对准标记的截面结构的变形或覆盖对准标记的抗蚀剂的涂布状态。本发明提供一种位置检测装置，用于使用电子束检测形成在物体上的对准标记的位置，该电子束具有用于将矩阵中的电子束照射到物体上的元素电子光学系统阵列（3）和偏转器 6）用于偏转多个电子束。偏转器（6）扫描对准标记上的多个电子束，反射电子检测器（9）在扫描时合成并检测来自对准标记的反射电子或二次电子，并且基于该基准确定对准标记的位置的电子束的位移量和检测结果。

18. 发明授权

US5864142A Electron beam exposure apparatus and method of controlling same 失效
标题翻译：电子束曝光装置及其控制方法
公开(公告)号：US5864142A
公开(公告)日：1999-01-26
申请号：US873023
申请日：1997-06-11
申请人： Masato Muraki , Susumu Goto
发明人： Masato Muraki , Susumu Goto
IPC分类号： G03F7/20 , H01J37/304 , H01J37/305 , H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/30438 , H01J2237/3045 , H01J2237/3175
摘要： A beam coordinate system decided by a plurality of beam reference positions and a deflection coordinate system decided by a deflector in a multi-electron beam exposure apparatus are made to coincide in a highly precise fashion and exposure is performed upon rapidly correcting a change in the offset between the two coordinate systems with the passage of time. The apparatus has an adjusting unit for adjusting an XY stage or a deflector based upon a first parameter representing the relationship between the beam coordinate system, which is decided by the plurality of beam reference positions, and the design coordinate system, and a second parameter representing the relationship between the deflection coordinate system, which is decided by the deflector, and the design coordinate system.
摘要翻译：使由多个光束参考位置决定的光束坐标系和由多电子束曝光设备中的偏转器确定的偏转坐标系以高度精确的方式重合，并且在快速校正偏移的变化时执行曝光在两个坐标系之间随时间推移。该装置具有调整单元，用于基于表示由多个光束参考位置确定的光束坐标系与设计坐标系之间的关系的第一参数以及表示第二参数的第二参数来调整XY平台或偏转器由偏转器决定的偏转坐标系与设计坐标系之间的关系。

19. 发明授权

US08692218B2 Charged particle beam exposure apparatus 失效
标题翻译：带电粒子束曝光装置
公开(公告)号：US08692218B2
公开(公告)日：2014-04-08
申请号：US11762180
申请日：2007-06-13
申请人： Masato Muraki , Haruo Yoda
发明人： Masato Muraki , Haruo Yoda
IPC分类号： G01B15/00
CPC分类号： H01J37/304 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/043 , H01J2237/24507 , H01J2237/3045 , H01J2237/30455 , H01J2237/30477 , H01J2237/30483
摘要： An exposure apparatus which draws a pattern on a substrate with a charged particle beam is disclosed. The exposure apparatus includes a blanker which controls, in accordance with a dose pattern including a plurality of pulses, whether to allow a charged particle beam to strike the substrate, and a controller which executes calibration for correcting the dose pattern to obtain a pattern having the target line width.
摘要翻译：公开了一种在具有带电粒子束的基板上绘制图案的曝光装置。曝光装置包括：消除器，其根据包括多个脉冲的剂量图案来控制是否允许带电粒子束撞击衬底;以及控制器，其执行用于校正剂量图案的校准，以获得具有目标线宽。

20. 发明申请

US20070057200A1 Electron beam apparatus and method of generating an electron beam irradiation pattern 有权
标题翻译：电子束装置和产生电子束照射图案的方法
公开(公告)号：US20070057200A1
公开(公告)日：2007-03-15
申请号：US11519872
申请日：2006-09-13
申请人： Ryo Fujita , Haruo Yoda , Kimiaki Ando , Yuji Inoue , Masato Muraki
发明人： Ryo Fujita , Haruo Yoda , Kimiaki Ando , Yuji Inoue , Masato Muraki
IPC分类号： G21G5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/31762 , H01J2237/31769
摘要： High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.
摘要翻译：通过使用小剂量的电子束进行高对比度曝光，以高精度在晶片上形成图案，进行高精度检查。在图案形成中，执行邻近效应校正处理。此外，基于使用电子束的曝光特性的逆特性的滤波结果来执行电子束的曝光。此外，在图案检查中，基于滤波结果照射电子束，以获得形成的图案的边缘的周边区域。

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