专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20070163995A1 PLASMA PROCESSING METHOD, APPARATUS AND STORAGE MEDIUM 审中-公开
标题翻译：等离子体处理方法，装置和存储介质
公开(公告)号：US20070163995A1
公开(公告)日：2007-07-19
申请号：US11567384
申请日：2006-12-06
申请人： Masaru SUGIMOTO , Noriyuki Kobayashi , Masaharu Sugiyama
发明人： Masaru SUGIMOTO , Noriyuki Kobayashi , Masaharu Sugiyama
IPC分类号： C23F1/00 , B44C1/22 , H01L21/302 , H01L21/306
CPC分类号： H01L21/31144 , H01J37/32082 , H01J2237/3347 , H01L21/31116 , H01L21/76816
摘要： In etching an insulating film such as an SiOC film or the like, in order to suppress a diameter of a hole or a width of a groove, a pre-processing is performed before performing the etching. In the pre-processing, a processing gas containing CF4 gas and CH3F gas is converted into a plasma, and an opening size of an opening portion of a resist mask is decreased by depositing deposits at a sidewall thereof by using the plasma. Further, in etching the SiOC film, a processing gas containing CF4 gas, CH3F gas, and N2 gas is converted into a plasma by supplying a processing gas atmosphere by using a first high frequency wave for generating the plasma, wherein the electric power divided by a surface area of a substrate becomes over 1500 W/70685.8 mm2 (a surface area of a 300 mm wafer), and then the SiOC film is etched.
摘要翻译：在蚀刻诸如SiOC膜等的绝缘膜时，为了抑制孔的直径或槽的宽度，在进行蚀刻之前进行预处理。在预处理中，含有CF 4气体和CH 3 F气体的处理气体被转换为等离子体，并且抗蚀剂掩模的开口部分的开口尺寸通过使用等离子体在其侧壁沉积沉积物而降低。此外，在蚀刻SiOC膜时，将含有CF 4气体，CH 3 F气体和N 2气体的处理气体转化为通过使用用于产生等离子体的第一高频波提供处理气体气氛的等离子体，其中被基板的表面积分割的电力超过1500W / 70685.8mm 2（表面积的300mm晶片），然后蚀刻SiOC膜。

12. 发明申请

US20060066247A1 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US20060066247A1
公开(公告)日：2006-03-30
申请号：US11157061
申请日：2005-06-21
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ooya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ooya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： H01J7/24
CPC分类号： H01J37/32422 , H01J37/32018 , H01J37/32091 , H01J37/3244 , H01J37/32522 , H01J37/32834 , H01J2237/2001 , H01J2237/334 , H01J2237/3344 , H01L21/67069 , Y10S156/915
摘要： A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a variable DC power supply to apply a DC voltage to the upper electrode, so as to cause the absolute value of a self-bias voltage on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode side to generate predetermined pressed plasma.
摘要翻译：等离子体蚀刻装置包括上电极和下电极，在其间产生处理气体的等离子体，以对晶片W进行等离子体蚀刻。该装置还包括用于向上电极施加直流电压的可变直流电源，使得其表面上的自偏压的绝对值足够大以在表面上获得合适的溅射效应，并且增加上电极侧的等离子体鞘长度以产生预定的按压等离子体。

13. 发明申请

US20060065630A1 Plasma processing method and apparatus, and storage medium 有权
标题翻译：等离子体处理方法和装置以及存储介质
公开(公告)号：US20060065630A1
公开(公告)日：2006-03-30
申请号：US11235341
申请日：2005-09-27
申请人： Masaru Sugimoto
发明人： Masaru Sugimoto
IPC分类号： C23F1/00 , H01L21/306 , B44C1/22 , H01L21/461
CPC分类号： H01L21/6831 , G03F7/427 , H01J2237/2001 , H01L21/02046 , H01L21/31116 , H01L21/31138 , H01L21/67069
摘要： A plasma processing method performs a plasma processing on a substrate mounted on a mounting table installed in an airtight processing chamber, the mounting table having a smaller size than the substrate. The substrate having a surface, on which a resist mark is formed, is mounted on the mounting table and then electrostatically adsorbed on the mounting table by applying a voltage to an electrostatic chuck. The surface of the substrate is etched by using a plasma of an etching gas while the substrate is cooled through a heat transfer between the substrate and the mounting table via a thermally conductive gas supplied between a top surface of the mounting table and a bottom surface of the substrate. The supply of the thermally conductive gas is stopped, and the resist mask on the substrate is ashed by using a plasma of an ashing gas containing O2.
摘要翻译：等离子体处理方法对安装在安装在气密处理室中的安装台上的基板上进行等离子体处理，该安装台具有比基板小的尺寸。具有形成有抗蚀剂标记的表面的基板安装在安装台上，然后通过向静电卡盘施加电压而静电吸附在安装台上。通过使用蚀刻气体的等离子体蚀刻衬底的表面，同时通过在安装台的顶表面之间供应的导热气体和基板和安装台的底面之间的热传递来冷却基板，底物。停止供应导热气体，并且通过使用含有O 2 2的灰化气体的等离子体将基板上的抗蚀剂掩模灰化。

14. 发明申请

US20060037701A1 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US20060037701A1
公开(公告)日：2006-02-23
申请号：US11156559
申请日：2005-06-21
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32348 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32642 , H01J37/32706 , H01J37/32834 , H01J2237/3344 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

15. 发明授权

US4665611A Method of fabricating superconductive electrical conductor 失效
标题翻译：制造超导电导体的方法
公开(公告)号：US4665611A
公开(公告)日：1987-05-19
申请号：US831462
申请日：1986-02-19
申请人： Nobuyuki Sadakata , Yoshimitsu Ikeno , Masaru Sugimoto , Osamu Kohno
发明人： Nobuyuki Sadakata , Yoshimitsu Ikeno , Masaru Sugimoto , Osamu Kohno
IPC分类号： H01B12/10 , C22F1/00 , H01B13/00 , H01L39/24
CPC分类号： H01L39/2409 , Y10S505/821 , Y10T29/49014
摘要： A method of fabricating a superconductive electrical conductor of Nb.sub.3 Sn type comprises a step of covering an elongated core member made of Nb with a covering member made of a third element selected from the group consisting of Ti, Ta, In, Hf, Al and Si. The core member covered with the covering member is covered with a tubular matrix made of a Cu-Sn alloy or a combination of Cu with Sn to form a composite wire element. Such wire elements are assembled in a tubular matrix made of a Cu-Sn alloy, Cu or a combination of Cu with Sn and reduced in diameter to form a multi-core composite wire element having a desired diameter. The assembling and reducing processing is effected at least one to form a multi-core composite wire which is then subjected to a diffusion heat-treatment to form an intermetallic compound of Nb.sub.3 Sn and the third element in the peripheral portion of the core member.
摘要翻译：制造Nb 3 Sn型超导电导体的方法包括用由Ti，Ta，In，Hf，Al和Si组成的组中选择的第三元素制成的覆盖部件覆盖由Nb制成的细长芯部件的步骤。用覆盖部件覆盖的芯部件被由Cu-Sn合金或Cu与Sn的组合制成的管状基体覆盖以形成复合线元件。这种线元件组装成由Cu-Sn合金制成的管状基体，Cu或Cu与Sn的组合并且直径减小以形成具有期望直径的多芯复合线材。至少进行组装和还原处理以形成多芯复合线，然后进行扩散热处理以在芯构件的周边部分中形成Nb 3 Sn的金属间化合物和第三元素。

16. 发明申请

US20110214815A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20110214815A1
公开(公告)日：2011-09-08
申请号：US13113330
申请日：2011-05-23
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32697 , H01J37/32706 , H01J2237/334 , H01L21/3065
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。

17. 发明授权

US07988816B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US07988816B2
公开(公告)日：2011-08-02
申请号：US11157061
申请日：2005-06-21
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ooya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ooya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32422 , H01J37/32018 , H01J37/32091 , H01J37/3244 , H01J37/32522 , H01J37/32834 , H01J2237/2001 , H01J2237/334 , H01J2237/3344 , H01L21/67069 , Y10S156/915
摘要： A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.
摘要翻译：等离子体蚀刻装置包括上电极和下电极，在其间产生处理气体的等离子体以在晶片W上进行等离子体蚀刻。该装置还包括设置在晶片周围的冷却环，设置在冷却周围的校正环环和直接连接到校正环的可变直流电源，所述直流电压被预设为向校正环提供相对于地电位的负偏压，用于吸引等离子体中的离子并将校正环的温度增加到补偿由于冷却环导致的目标基板的边缘附近的空间的温度的降低。

18. 发明授权

US07740737B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US07740737B2
公开(公告)日：2010-06-22
申请号：US11156559
申请日：2005-06-21
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32348 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32642 , H01J37/32706 , H01J37/32834 , H01J2237/3344 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

19. 发明申请

US20080105378A1 PLASMA PROCESSING METHOD AND APPARATUS, AND STORAGE MEDIUM 审中-公开
标题翻译：等离子体处理方法和装置以及存储介质
公开(公告)号：US20080105378A1
公开(公告)日：2008-05-08
申请号：US11960850
申请日：2007-12-20
申请人： Masaru SUGIMOTO
发明人： Masaru SUGIMOTO
IPC分类号： C23F1/08
CPC分类号： H01L21/6831 , G03F7/427 , H01J2237/2001 , H01L21/02046 , H01L21/31116 , H01L21/31138 , H01L21/67069
摘要： A plasma processing method performs a plasma processing on a substrate mounted on a mounting table installed in an airtight processing chamber, the mounting table having a smaller size than the substrate. The substrate having a surface, on which a resist mark is formed, is mounted on the mounting table and then electrostatically adsorbed on the mounting table by applying a voltage to an electrostatic chuck. The surface of the substrate is etched by using a plasma of an etching gas while the substrate is cooled through a heat transfer between the substrate and the mounting table via a thermally conductive gas supplied between a top surface of the mounting table and a bottom surface of the substrate. The supply of the thermally conductive gas is stopped, and the resist mask on the substrate is ashed by using a plasma of an ashing gas containing 02.
摘要翻译：等离子体处理方法对安装在安装在气密处理室中的安装台上的基板上进行等离子体处理，该安装台具有比基板小的尺寸。具有形成有抗蚀剂标记的表面的基板安装在安装台上，然后通过向静电卡盘施加电压而静电吸附在安装台上。通过使用蚀刻气体的等离子体蚀刻衬底的表面，同时通过在安装台的顶表面之间供应的导热气体和基板和安装台的底面之间的热传递来冷却基板，底物。停止供给导热气体，通过使用含有0 <2的灰化气体的等离子体，使基板上的抗蚀剂掩模灰化。

20. 发明申请

US20070007540A1 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US20070007540A1
公开(公告)日：2007-01-11
申请号：US10558360
申请日：2004-05-26
申请人： Takuma Hashimoto , Masaru Sugimoto , Ryoji Yokotani , Koji Nishioka , Yutaka Iwahori , Shinya Ishizaki , Toshiyuki Suzuki , Yoshiyuki Uchinono , Masahide Muto , Satoshi Mori , Hideyoshi Kimura
发明人： Takuma Hashimoto , Masaru Sugimoto , Ryoji Yokotani , Koji Nishioka , Yutaka Iwahori , Shinya Ishizaki , Toshiyuki Suzuki , Yoshiyuki Uchinono , Masahide Muto , Satoshi Mori , Hideyoshi Kimura
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L33/486 , H01L33/62 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2924/00011 , H01L2924/00014 , H01L2924/01015 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/15156 , H01L2924/15159 , H01L2924/15192 , H01L2924/15311 , H01L2924/19107 , H01L2924/00 , H01L2224/05599 , H01L2924/01005 , H01L2924/01033
摘要： A light-emitting device (200) has a submount (100) and a plate for heat transfer (300) having a metallic plate (30). The submount (100) has a mount base (10), at least one light-emitting diode chip (5) mounted thereon and electrically conducting lines (12-17) formed on the mount base (10) to be connected electrically to the light-emitting diode chip (5). A first plane (11) of the mount base (10) of the submount (100) is bonded thermally to the first plate (300). For example, the plate is a circuit board having a metallic plate (30), and the submount (100) is bonded thermally to the metallic plate (30) of the one of the at least one plate (300). In an example, a second plate for heat transfer is also bonded thermally to a second plane of the mount base (100) for providing a plurality of heat transfer paths.
摘要翻译：发光装置（200）具有底座（100）和具有金属板（30）的传热板（300）。基座（100）具有安装基座（10），安装有至少一个发光二极管芯片（5）和形成在安装基座（10）上的电导线（12-17），以电连接到光发光二极管芯片（5）。底座（100）的安装座（10）的第一平面（11）被热接合到第一板（300）。例如，板是具有金属板（30）的电路板，并且底座（100）热接合到至少一个板（300）中的一个的金属板（30）。在一个示例中，用于传热的第二板也热粘合到安装基座（100）的第二平面，以提供多个传热路径。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式