专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

WO2006044419A2 MAGNETIC-FIELD CONCENTRATION IN INDUCTIVELY COUPLED PLASMA REACTORS 审中-公开
标题翻译：电感耦合等离子体反应器中的磁场浓度
公开(公告)号：WO2006044419A2
公开(公告)日：2006-04-27
申请号：PCT/US2005/036579
申请日：2005-10-12
申请人： APPLIED MATERIALS, INC. , LU, Siqing , LAI, Canfeng , LIANG, Qiwei , LONG, Maolin , CHOU, Irene , BLOKING, Jason , KIM, Steven, H , YIEH, Ellie Y
发明人： LU, Siqing , LAI, Canfeng , LIANG, Qiwei , LONG, Maolin , CHOU, Irene , BLOKING, Jason , KIM, Steven, H , YIEH, Ellie Y
IPC分类号： H01J37/32 , C23C16/507
CPC分类号： H01J37/321 , C23C16/045 , C23C16/401 , C23C16/507 , H05B6/26
摘要： A substrate processing system is provided with a housing defining a process chamber. A substrate holder is disposed within the process chamber and configured to support a substrate during substrate processing. A gas delivery system is configured to introduce a gas into the process chamber. A pressure-control system is provided for maintaining a selected pressure within the process chamber. A high-density-plasma generating system is operatively coupled with the process chamber and includes a coil for inductively coupling energy into a plasma formed within the process chamber. It also includes magneto-dielectric material proximate the coil for concentrating a magnetic field generated by the coil. A controller is also provided for controlling the gas-delivery system, the pressure-control system, and the high-density-plasma generating system.
摘要翻译：衬底处理系统设置有限定处理室的壳体。衬底保持器设置在处理室内并且构造成在衬底处理期间支撑衬底。气体输送系统构造成将气体引入处理室。提供压力控制系统以保持处理室内的选定压力。高密度等离子体发生系统与处理室可操作地耦合，并且包括用于将能量感应耦合到处理室内形成的等离子体中的线圈。它还包括靠近线圈的磁电介质材料，用于集中由线圈产生的磁场。还提供用于控制气体输送系统，压力控制系统和高密度等离子体产生系统的控制器。

12. 发明申请

WO2013019565A2 INDUCTIVE PLASMA SOURCES FOR WAFER PROCESSING AND CHAMBER CLEANING 审中-公开
标题翻译：晶片加工和室内清洗的感应等离子体源
公开(公告)号：WO2013019565A2
公开(公告)日：2013-02-07
申请号：PCT/US2012/048400
申请日：2012-07-26
申请人： APPLIED MATERIALS, INC. , LIANG, Qiwei
发明人： LIANG, Qiwei
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： C23C16/5096 , H01J37/32357 , H01J37/32449 , H01J37/32577 , H01J37/32633
摘要： Methods and systems for depositing material on a substrate are described. One method may include providing a processing chamber partitioned into a first plasma region and a second plasma region. The method may further include delivering the substrate to the processing chamber, where the substrate may occupy a portion of the second plasma region. The method may additionally include forming a first plasma in the first plasma region, where the first plasma may not directly contact the substrate, and the first plasma may be formed by activation of at least one shaped radio frequency ("RF") coil above the first plasma region. The method may moreover include depositing the material on the substrate to form a layer, where one or more reactants excited by the first plasma may be used in deposition of the material.
摘要翻译：描述了用于在衬底上沉积材料的方法和系统。一种方法可以包括提供分隔成第一等离子体区域和第二等离子体区域的处理室。该方法可以进一步包括将衬底传送到处理室，其中衬底可以占据第二等离子体区域的一部分。该方法可以另外包括在第一等离子体区域中形成第一等离子体，其中第一等离子体可以不直接接触衬底，并且第一等离子体可以通过激活以上的至少一个成形射频（“RF”）线圈来形成第一等离子体区域。此外，该方法可以包括将材料沉积在基板上以形成层，其中可以使用由第一等离子体激发的一种或多种反应物来沉积材料。

13. 发明申请

WO2011009002A3 FLOW CONTROL FEATURES OF CVD CHAMBERS 审中-公开
公开(公告)号：WO2011009002A3
公开(公告)日：2011-01-20
申请号：PCT/US2010/042194
申请日：2010-07-15
申请人： APPLIED MATERIALS, INC. , CHUC, Kien, N. , LIANG, Qiwei , NGUYEN, Hanh, D. , CHEN, Xinglong , MILLER, Matthew , PARK, Soonam , TRAN, Toan, Q. , KHAN, Adib , YANG, Jang-Gyoo , LUBOMIRSKY, Dmitry , VENKATARAMAN, Shankar
发明人： CHUC, Kien, N. , LIANG, Qiwei , NGUYEN, Hanh, D. , CHEN, Xinglong , MILLER, Matthew , PARK, Soonam , TRAN, Toan, Q. , KHAN, Adib , YANG, Jang-Gyoo , LUBOMIRSKY, Dmitry , VENKATARAMAN, Shankar
IPC分类号： H01L21/205
摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

14. 发明申请

WO2011009002A2 FLOW CONTROL FEATURES OF CVD CHAMBERS 审中-公开
标题翻译：化学气相沉积室的流动控制特性
公开(公告)号：WO2011009002A2
公开(公告)日：2011-01-20
申请号：PCT/US2010042194
申请日：2010-07-15
申请人： APPLIED MATERIALS INC , CHUC KIEN N , LIANG QIWEI , NGUYEN HANH D , CHEN XINGLONG , MILLER MATTHEW , PARK SOONAM , TRAN TOAN Q , KHAN ADIB , YANG JANG-GYOO , LUBOMIRSKY DMITRY , VENKATARAMAN SHANKAR
发明人： CHUC KIEN N , LIANG QIWEI , NGUYEN HANH D , CHEN XINGLONG , MILLER MATTHEW , PARK SOONAM , TRAN TOAN Q , KHAN ADIB , YANG JANG-GYOO , LUBOMIRSKY DMITRY , VENKATARAMAN SHANKAR
IPC分类号： H01L21/205
CPC分类号： C23C16/45565 , C23C16/452 , C23C16/45574 , H01J37/3244 , H01J37/32449 , Y10T137/85938
摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.
摘要翻译：提供了用于气体分配组件的设备和方法。在一个方面中，提供了一种气体分配组件，其包括环形主体，该环形主体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部以及形成的座进入内部环形壁，位于上部凹部中的上部板，其包括具有穿过其形成的多个第一孔的盘形主体以及定位在该底座上的底板，该底部板包括盘形主体，该盘形主体具有多个第二形成在其中的与第一孔对齐的孔，以及形成在第二孔与底板之间的多个第三孔，底板密封地联接到上板，以将多个第一孔和第二孔与多个第三孔。

15. 发明申请

WO2007140425A3 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140425A3
公开(公告)日：2008-02-14
申请号：PCT/US2007070000
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： H01L21/76
CPC分类号： C23C16/509 , C23C16/401 , C23C16/452 , C23C16/45514 , C23C16/45574 , C23C16/45576 , C23C16/45578 , C23C16/4584 , H01J37/32357 , H01J37/3244 , H01J37/32752 , H01J2237/2001
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括前体分配系统，其包括至少一个顶部入口和多个侧入口。顶部入口可以位于衬底台的上方，并且侧入口可以在衬底台周围径向分布。反应性自由基前体可以通过顶部入口提供给沉积室。还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

16. 发明申请

WO2009137272A2 FLOWABLE DIELECTRIC EQUIPMENT AND PROCESSES 审中-公开
标题翻译：流动电介质设备和工艺
公开(公告)号：WO2009137272A2
公开(公告)日：2009-11-12
申请号：PCT/US2009/041402
申请日：2009-04-22
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , LIANG, Qiwei , YANG, Jang Gyoo
发明人： LUBOMIRSKY, Dmitry , LIANG, Qiwei , YANG, Jang Gyoo
IPC分类号： H05H1/34 , H01L21/00 , H01L21/205 , H01L21/3065
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/452 , C23C16/45574 , C23C16/507 , H01J37/32082 , H01J37/32357 , H01J37/3244
摘要： Substrate processing systems are described that may include a processing chamber having an interior capable of holding an internal chamber pressure different from an external chamber pressure. The systems may also include a remote plasma system operable to generate a plasma outside the interior of the processing chamber. In addition, the systems may include a first process gas channel operable to transport a first process gas from the remote plasma system to the interior of the processing chamber, and a second process gas channel operable to transport a second process gas that is not treated by the remote plasma system. The second process gas channel has a distal end that opens into the interior of the processing chamber, and that is at least partially surrounded by the first process gas channel.
摘要翻译：描述了可以包括具有能够保持不同于外部室压力的内部室压力的内部的处理室的基板处理系统。该系统还可以包括可操作以在处理室内部产生等离子体的远程等离子体系统。此外，系统可以包括可操作以将第一处理气体从远程等离子体系统输送到处理室的内部的第一处理气体通道，以及可操作以输送未被处理室处理的第二处理气体的第二处理气体通道远程等离子体系统。第二工艺气体通道具有通向处理室内部的远端，并且至少部分地被第一工艺气体通道包围。

17. 发明申请

WO2007140421A9 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140421A9
公开(公告)日：2008-12-31
申请号：PCT/US2007069996
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： C23F1/00 , C23C16/22 , C23C16/30 , C23C16/36 , C23C16/40 , C23C16/46 , C23C16/48 , C23C16/52 , H01L21/306
CPC分类号： C23C16/46 , C23C16/452 , C23C16/45565 , C23C16/45574 , H01L21/67115
摘要： A system (100) to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system (100) may include a deposition chamber (201 ), a substrate stage in the deposition chamber (201 ) to hold the substrate, and a remote plasma generating system coupled to the deposition chamber (201 ), where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system (100) may also include a precursor distribution system (700) comprising dual-channel showerhead (700) positioned above the substrate stage. The showerhead (700) may have a faceplate (802) with a first set of openings (804) through which the reactive radical precursor enters the deposition chamber (201 ), and a second set of openings (806) through which a second dielectric precursor enters the deposition chamber (201 ). An in-situ plasma generating system may als be included to generate the plasma in the deposition chamber (201 ) from the dielectric precursors supplied to the deposition chambe (201).
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统（100）。系统（100）可以包括沉积室（201），沉积室（201）中的用于保持基板的基板台和耦合到沉积室（201）的等离子体生成系统，其中等离子体产生系统是用于产生具有一个或多个反应性基团的电介质前体。系统（100）还可以包括前置分布系统（700），其包括位于衬底台上方的双通道喷头（700）。喷头（700）可以具有带有第一组开口（804）的面板（802），反应性基团前体通过该开口进入沉积室（201），第二组开口（806）通过第二组开口进入沉积室（201）。可以包括原位等离子体产生系统以在从沉积腔（201）提供的电介质前体在沉积室（201）中产生等离子体。

18. 发明申请

WO2007140426A3 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140426A3
公开(公告)日：2008-12-11
申请号：PCT/US2007070001
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： C23F1/00 , C23C16/22 , C23C16/30 , C23C16/36 , C23C16/40 , C23C16/46 , C23C16/48 , C23C16/52 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/45574 , C23C16/505
摘要： A system (100) to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system (100) may include a deposition chamber (201), a substrate stage in the deposition chamber (201) to hold the substrate, and a remote plasma generating system coupled to the deposition chamber (201), where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system (100) may also include a precursor distribution system (700) comprising a dual-channel showerhead (700) positioned above the substrate stage. The showerhead (700) may have a faceplate (802) with a first set of openings (804) through which the reactive radical precursor enters the deposition chamber (201), and a second set of openings (806) through which a second dielectric precursor enters the deposition chamber (201). An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber (201) from the dielectric precursors supplied to the deposition chamber (201)
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统（100）。系统（100）可以包括沉积室（201），沉积室（201）中的用于保持基板的基板台和耦合到沉积室（201）的等离子体生成系统，其中等离子体产生系统是用于产生具有一个或多个反应性基团的电介质前体。系统（100）还可以包括前体分配系统（700），其包括位于衬底台上方的双通道喷头（700）。喷头（700）可以具有带有第一组开口（804）的面板（802），反应性基团前体通过该开口进入沉积室（201），第二组开口（806）通过第二组开口进入沉积室（201）。还可以包括原位等离子体产生系统，以从沉积室（201）中提供的电介质前体在沉积室（201）中产生等离子体，

19. 发明申请

WO2007140421A3 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140421A3
公开(公告)日：2008-10-30
申请号：PCT/US2007069996
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： C23F1/00 , C23C16/22 , C23C16/30 , C23C16/36 , C23C16/40 , C23C16/46 , C23C16/48 , C23C16/52 , H01L21/306
CPC分类号： C23C16/46 , C23C16/452 , C23C16/45565 , C23C16/45574 , H01L21/67115
摘要： A system (100) to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system (100) may include a deposition chamber (201 ), a substrate stage in the deposition chamber (201 ) to hold the substrate, and a remote plasma generating system coupled to the deposition chamber (201 ), where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system (100) may also include a precursor distribution system (700) comprising dual-channel showerhead (700) positioned above the substrate stage. The showerhead (700) may have a faceplate (802) with a first set of openings (804) through which the reactive radical precursor enters the deposition chamber (201 ), and a second set of openings (806) through which a second dielectric precursor enters the deposition chamber (201 ). An in-situ plasma generating system may als be included to generate the plasma in the deposition chamber (201 ) from the dielectric precursors supplied to the deposition chambe (201)
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统（100）。系统（100）可以包括沉积室（201），沉积室（201）中的用于保持基板的基板台和耦合到沉积室（201）的等离子体生成系统，其中等离子体产生系统是用于产生具有一个或多个反应性基团的电介质前体。系统（100）还可以包括前置分布系统（700），其包括位于衬底台上方的双通道喷头（700）。喷头（700）可以具有带有第一组开口（804）的面板（802），反应性基团前体通过该开口进入沉积室（201），第二组开口（806）通过第二组开口进入沉积室（201）。可以包括原位等离子体产生系统以在从沉积腔（201）提供的电介质前体在沉积室（201）中产生等离子体，

20. 发明申请

WO2007140425A9 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质填料工艺室
公开(公告)号：WO2007140425A9
公开(公告)日：2008-03-27
申请号：PCT/US2007070000
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： H01L21/76
CPC分类号： C23C16/509 , C23C16/401 , C23C16/452 , C23C16/45514 , C23C16/45574 , C23C16/45576 , C23C16/45578 , C23C16/4584 , H01J37/32357 , H01J37/3244 , H01J37/32752 , H01J2237/2001
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了由电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，在沉积室中的衬底台以保持衬底，以及耦合到沉积室的远程等离子体产生系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括前体分配系统，其包括至少一个顶部入口和多个侧入口。顶部入口可以定位在基板台上方并且侧入口可以径向分布在基板台周围。反应性自由基前体可以通过顶部入口供应到沉积室。还可以包括原位等离子体发生系统以从供应到沉积室的电介质前体在沉积室中产生等离子体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式