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1. 发明申请

WO2012099681A2 SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA 审中-公开
标题翻译：半导体处理系统和使用电容耦合等离子体的方法
公开(公告)号：WO2012099681A2
公开(公告)日：2012-07-26
申请号：PCT/US2011/066281
申请日：2011-12-20
申请人： APPLIED MATERIALS, INC. , YANG, Jang-Gyoo , MILLER, Matthew L. , CHEN, Xinglong , CHUC, Kien N. , LIANG, Qiwei , VENKATARAMAN, Shankar , LUBOMIRSKY, Dmitry
发明人： YANG, Jang-Gyoo , MILLER, Matthew L. , CHEN, Xinglong , CHUC, Kien N. , LIANG, Qiwei , VENKATARAMAN, Shankar , LUBOMIRSKY, Dmitry
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： H05H1/24 , C23C16/45565 , C23C16/45585 , H01J37/32091 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32449 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32724 , H01L21/02274
摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
摘要翻译：描述了具有位于处理室内的电容耦合等离子体（CCP）单元的衬底处理系统。 CCP单元可以包括形成在第一电极和第二电极之间的等离子体激发区域。第一电极可以包括允许第一气体进入等离子体激发区域的第一多个开口，并且第二电极可以包括允许活化气体离开等离子体激发区域的第二多个开口。该系统还可以包括用于将第一气体供应到CCP单元的第一电极的气体入口和可操作以支撑衬底的基座。基座位于气体反应区域的下方，活性气体从CCP单元行进。

2. 发明申请

WO2007021521A2 TWO-PIECE DOME WITH SEPARATE RF COILS FOR INDUCTIVELY COUPLED PLASMA REACTORS 审中-公开
标题翻译：用于电感耦合等离子体反应器的独立射频线圈的两面圆顶
公开(公告)号：WO2007021521A2
公开(公告)日：2007-02-22
申请号：PCT/US2006/029763
申请日：2006-07-28
申请人： APPLIED MATERIALS, INC. , LU, Siqing , LIANG, Qiwei , LAI, Canfeng , CHEN, Robert, T. , BLOKING, Jason, T. , CHOU, Irene , KIM, Steven, H. , LEE, Young, S. , YIEH, Ellie, Y.
发明人： LU, Siqing , LIANG, Qiwei , LAI, Canfeng , CHEN, Robert, T. , BLOKING, Jason, T. , CHOU, Irene , KIM, Steven, H. , LEE, Young, S. , YIEH, Ellie, Y.
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J37/321 , H01J37/32431 , H01J37/32458
摘要： A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.
摘要翻译：衬底处理系统具有限定处理室，气体输送系统，高密度等离子体产生系统，衬底保持器和控制器的壳体。壳体包括侧壁和位于侧壁上方的圆顶。圆顶具有物理分离和不连续的部分。气体输送系统通过位于两个物理分离的和不连续的圆顶之间的侧喷嘴将气体引入处理室。高密度等离子体产生系统与处理室可操作地耦合。衬底保持器设置在处理室内并且在衬底处理期间支撑衬底。控制器控制气体输送系统和高密度等离子体发生系统。

3. 发明申请

WO2006065740A2 SELF-COOLING GAS DELIVERY APPARATUS UNDER HIGH VACUUM FOR HIGH DENSITY PLASMA APPLICATIONS 审中-公开
标题翻译：用于高密度等离子体应用的高真空下的自冷式气体输送装置
公开(公告)号：WO2006065740A2
公开(公告)日：2006-06-22
申请号：PCT/US2005/044909
申请日：2005-12-12
申请人： APPLIED MATERIALS, INC. , LIANG, Qiwei , LU, Siqing
发明人： LIANG, Qiwei , LU, Siqing
IPC分类号： C23C16/00
CPC分类号： C23C16/45563 , C23C16/507 , H01J37/3244 , H01J37/32449
摘要： A gas distributor for use in a semiconductor processing chamber is provided. The gas distributor comprises a gas inlet, a gas outlet, and a stem section having a spiral thread. The gas distributor further comprises a body having a gas deflecting surface that extends radially outward away from the stem section and a lower face disposed on the opposite side of the body from the gas deflecting surface, a lateral seat disposed between the spiral thread and the gas deflecting surface, and a gas passageway that extends from the gas inlet through the stem section and body to the gas outlet. In a specific embodiment, the lateral seat is adapted to hold a sealing member.
摘要翻译：提供一种用于半导体处理室的气体分配器。气体分配器包括气体入口，气体出口和具有螺旋线的杆段。所述气体分配器还包括具有气体偏转表面的主体，所述气体偏转表面从所述杆部分径向向外延伸，以及设置在所述主体的与所述气体偏转表面相反的一侧的下表面，设置在所述螺旋线和气体之间的侧面座偏转表面，以及从气体入口通过阀杆部分和主体延伸到气体出口的气体通道。在具体实施例中，侧座适于保持密封构件。

4. 发明申请

WO2009137272A2 FLOWABLE DIELECTRIC EQUIPMENT AND PROCESSES 审中-公开
标题翻译：流动电介质设备和工艺
公开(公告)号：WO2009137272A2
公开(公告)日：2009-11-12
申请号：PCT/US2009/041402
申请日：2009-04-22
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , LIANG, Qiwei , YANG, Jang Gyoo
发明人： LUBOMIRSKY, Dmitry , LIANG, Qiwei , YANG, Jang Gyoo
IPC分类号： H05H1/34 , H01L21/00 , H01L21/205 , H01L21/3065
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/452 , C23C16/45574 , C23C16/507 , H01J37/32082 , H01J37/32357 , H01J37/3244
摘要： Substrate processing systems are described that may include a processing chamber having an interior capable of holding an internal chamber pressure different from an external chamber pressure. The systems may also include a remote plasma system operable to generate a plasma outside the interior of the processing chamber. In addition, the systems may include a first process gas channel operable to transport a first process gas from the remote plasma system to the interior of the processing chamber, and a second process gas channel operable to transport a second process gas that is not treated by the remote plasma system. The second process gas channel has a distal end that opens into the interior of the processing chamber, and that is at least partially surrounded by the first process gas channel.
摘要翻译：描述了可以包括具有能够保持不同于外部室压力的内部室压力的内部的处理室的基板处理系统。该系统还可以包括可操作以在处理室内部产生等离子体的远程等离子体系统。此外，系统可以包括可操作以将第一处理气体从远程等离子体系统输送到处理室的内部的第一处理气体通道，以及可操作以输送未被处理室处理的第二处理气体的第二处理气体通道远程等离子体系统。第二工艺气体通道具有通向处理室内部的远端，并且至少部分地被第一工艺气体通道包围。

5. 发明申请

WO2012093983A2 REMOTE PLASMA SOURCE SEASONING 审中-公开
标题翻译：远程等离子源调理
公开(公告)号：WO2012093983A2
公开(公告)日：2012-07-12
申请号：PCT/US2010/045938
申请日：2010-08-18
申请人： APPLIED MATERIALS, INC. , PARK, Soonam , JEON, Soo , TRAN, Toan Q. , YANG, Jang-Gyoo , LIANG, Qiwei , LUBOMIRSKY, Dmitry
发明人： PARK, Soonam , JEON, Soo , TRAN, Toan Q. , YANG, Jang-Gyoo , LIANG, Qiwei , LUBOMIRSKY, Dmitry
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： C23C16/4404 , C23C16/401 , C23C16/4405 , H01J37/32357 , H01J37/32862 , Y10S438/905
摘要： Methods of seasoning a remote plasma system are described. The methods include the steps of flowing a silicon-containing precursor into a remote plasma region to deposit a silicon containing film on an interior surface of the remote plasma system. The methods reduce reactions with the seasoned walls during deposition processes, resulting in improved deposition rate, improved deposition uniformity and reduced defectivity during subsequent deposition.
摘要翻译：描述调制远程等离子体系统的方法。该方法包括将含硅前体流入远程等离子体区域以在远程等离子体系统的内表面上沉积含硅膜的步骤。这些方法减少沉积过程中与经过老化的壁面的反应，导致沉积速率提高，沉积均匀性改善并且在随后的沉积期间减少缺陷率。

6. 发明申请

WO2010048076A2 PLASMA SOURCE FOR CHAMBER CLEANING AND PROCESS 审中-公开
标题翻译：用于室清洁和过程的等离子体源
公开(公告)号：WO2010048076A2
公开(公告)日：2010-04-29
申请号：PCT/US2009/061145
申请日：2009-10-19
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , YANG, Jang Gyoo , LIANG, Qiwei , MILLER, Matthew L. , SANTOSA, James , CHEN, Xinglong , SMITH, Paul F.
发明人： LUBOMIRSKY, Dmitry , YANG, Jang Gyoo , LIANG, Qiwei , MILLER, Matthew L. , SANTOSA, James , CHEN, Xinglong , SMITH, Paul F.
IPC分类号： H05H1/34 , H05H1/36 , H01L21/205 , H01L21/3065
CPC分类号： C23C16/4405 , H01J37/32036 , H01J37/32045 , H01J37/32082 , H01J37/32183 , H01J37/32357
摘要： Apparatus and methods for processing a substrate and processing a process chamber are provided. In one embodiment, an apparatus is provided for processing a substrate including a power source, a switch box coupled to the power source and the switch box having a switch interchangeable between a first position and a second position, a first match box coupled to the switch box, a plasma generator coupled to the first match box, a second match box coupled to the switch box, and a remote plasma source coupled to the second match box.
摘要翻译：提供了用于处理基板和处理处理室的装置和方法。在一个实施例中，提供一种用于处理包括电源，耦合到电源的开关盒和具有在第一位置和第二位置之间可互换的开关的开关盒的基板的设备，耦合到开关的第一匹配盒耦合到第一匹配盒的等离子体发生器，耦合到开关盒的第二匹配盒以及耦合到第二匹配盒的远程等离子体源。

7. 发明申请

WO2007140426A2 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140426A2
公开(公告)日：2007-12-06
申请号：PCT/US2007/070001
申请日：2007-05-30
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , LIANG, Qiwei , PARK, Soonam , CHUC, Kien, N , YIEH, Ellie
发明人： LUBOMIRSKY, Dmitry , LIANG, Qiwei , PARK, Soonam , CHUC, Kien, N , YIEH, Ellie
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/45574 , C23C16/505
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system comprising a dual-channel showerhead positioned above the substrate stage. The showerhead may have a faceplate with a first set of openings through which the reactive radical precursor enters the deposition chamber, and a second set of openings through which a second dielectric precursor enters the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括前体分配系统，其包括位于衬底台上方的双通道喷头。喷头可以具有面板，其具有第一组开口，反应性自由基前体通过该开口进入沉积室，以及第二组开口，第二介电体前体通过该开口进入沉积室。还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

8. 发明申请

WO2007021522A1 THERMAL MANAGEMENT OF INDUCTIVELY COUPLED PLASMA REACTORS 审中-公开
标题翻译：电感耦合等离子体反应器的热管理
公开(公告)号：WO2007021522A1
公开(公告)日：2007-02-22
申请号：PCT/US2006/029764
申请日：2006-07-28
申请人： APPLIED MATERIALS, INC. , LU, Siqing , LIANG, Qiwei , CHOU, Irene , KIM, Steven, H. , LEE, Young, S. , YIEH, Ellie, Y. , RASHEED, Muhammad, M.
发明人： LU, Siqing , LIANG, Qiwei , CHOU, Irene , KIM, Steven, H. , LEE, Young, S. , YIEH, Ellie, Y. , RASHEED, Muhammad, M.
IPC分类号： H01J37/32
CPC分类号： H01J37/32522 , H01J37/321
摘要： An RF coil assembly provides a source to generate a plasma inductively in a process chamber. The RF coil assembly includes an RF coil disposed about a perimeter of the processing chamber and a frame disposed about a perimeter of the processing chamber. The frame is adapted to support the RF coil in position. An interface material is disposed between and in thermal contact with the frame and a sidewall of the processing chamber. The interface material has a thermal conductivity of 4.0 W/mK or greater.
摘要翻译： RF线圈组件提供源以在处理室中感应地产生等离子体。 RF线圈组件包括围绕处理室的周边布置的RF线圈和围绕处理室的周边设置的框架。框架适于将RF线圈支撑在适当位置。界面材料设置在框架和处理室的侧壁之间并与之热接触。界面材料的导热率为4.0W / mK以上。

9. 发明申请

WO2006044419A2 MAGNETIC-FIELD CONCENTRATION IN INDUCTIVELY COUPLED PLASMA REACTORS 审中-公开
标题翻译：电感耦合等离子体反应器中的磁场浓度
公开(公告)号：WO2006044419A2
公开(公告)日：2006-04-27
申请号：PCT/US2005/036579
申请日：2005-10-12
申请人： APPLIED MATERIALS, INC. , LU, Siqing , LAI, Canfeng , LIANG, Qiwei , LONG, Maolin , CHOU, Irene , BLOKING, Jason , KIM, Steven, H , YIEH, Ellie Y
发明人： LU, Siqing , LAI, Canfeng , LIANG, Qiwei , LONG, Maolin , CHOU, Irene , BLOKING, Jason , KIM, Steven, H , YIEH, Ellie Y
IPC分类号： H01J37/32 , C23C16/507
CPC分类号： H01J37/321 , C23C16/045 , C23C16/401 , C23C16/507 , H05B6/26
摘要： A substrate processing system is provided with a housing defining a process chamber. A substrate holder is disposed within the process chamber and configured to support a substrate during substrate processing. A gas delivery system is configured to introduce a gas into the process chamber. A pressure-control system is provided for maintaining a selected pressure within the process chamber. A high-density-plasma generating system is operatively coupled with the process chamber and includes a coil for inductively coupling energy into a plasma formed within the process chamber. It also includes magneto-dielectric material proximate the coil for concentrating a magnetic field generated by the coil. A controller is also provided for controlling the gas-delivery system, the pressure-control system, and the high-density-plasma generating system.
摘要翻译：衬底处理系统设置有限定处理室的壳体。衬底保持器设置在处理室内并且构造成在衬底处理期间支撑衬底。气体输送系统构造成将气体引入处理室。提供压力控制系统以保持处理室内的选定压力。高密度等离子体发生系统与处理室可操作地耦合，并且包括用于将能量感应耦合到处理室内形成的等离子体中的线圈。它还包括靠近线圈的磁电介质材料，用于集中由线圈产生的磁场。还提供用于控制气体输送系统，压力控制系统和高密度等离子体产生系统的控制器。

10. 发明申请

WO2013019565A2 INDUCTIVE PLASMA SOURCES FOR WAFER PROCESSING AND CHAMBER CLEANING 审中-公开
标题翻译：晶片加工和室内清洗的感应等离子体源
公开(公告)号：WO2013019565A2
公开(公告)日：2013-02-07
申请号：PCT/US2012/048400
申请日：2012-07-26
申请人： APPLIED MATERIALS, INC. , LIANG, Qiwei
发明人： LIANG, Qiwei
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： C23C16/5096 , H01J37/32357 , H01J37/32449 , H01J37/32577 , H01J37/32633
摘要： Methods and systems for depositing material on a substrate are described. One method may include providing a processing chamber partitioned into a first plasma region and a second plasma region. The method may further include delivering the substrate to the processing chamber, where the substrate may occupy a portion of the second plasma region. The method may additionally include forming a first plasma in the first plasma region, where the first plasma may not directly contact the substrate, and the first plasma may be formed by activation of at least one shaped radio frequency ("RF") coil above the first plasma region. The method may moreover include depositing the material on the substrate to form a layer, where one or more reactants excited by the first plasma may be used in deposition of the material.
摘要翻译：描述了用于在衬底上沉积材料的方法和系统。一种方法可以包括提供分隔成第一等离子体区域和第二等离子体区域的处理室。该方法可以进一步包括将衬底传送到处理室，其中衬底可以占据第二等离子体区域的一部分。该方法可以另外包括在第一等离子体区域中形成第一等离子体，其中第一等离子体可以不直接接触衬底，并且第一等离子体可以通过激活以上的至少一个成形射频（“RF”）线圈来形成第一等离子体区域。此外，该方法可以包括将材料沉积在基板上以形成层，其中可以使用由第一等离子体激发的一种或多种反应物来沉积材料。

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