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11. 发明申请

US20080073659A1 Semiconductor Light Emitting Device 有权
标题翻译：半导体发光装置
公开(公告)号：US20080073659A1
公开(公告)日：2008-03-27
申请号：US11662097
申请日：2005-09-07
申请人： Kentaro Tamura , Ken Nakahara
发明人： Kentaro Tamura , Ken Nakahara
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32 , H01L33/405
摘要： A semiconductor light emitting device is provided, in which the light emitting efficiency of a LED is improved. A semiconductor light emitting device (11) includes a light emitting layer (16) made of a GaN-based semiconductor sandwiched with an n-type GaN-based semiconductor layer (17) and a p-type GaN-based semiconductor layer (15), and a ZnO-based or an ITO transparent electrode layer (14). Further, a value of an equation represented by 3t/(A/π)1/2−3(t/(A/π)1/2)2+(t/(A/π)1/2)3 is 0.1 or more, where a thickness of the transparent electrode layer is represented by t and an area of the light emitting layer (light emitting area) of the light emitting device (11) is represented by A. The light emitting efficiency is improved using the transparent electrode layer (14) having an optimum thickness to the light emitting area.
摘要翻译：提供了一种提高了LED的发光效率的半导体发光器件。半导体发光器件（11）包括由夹在n型GaN基半导体层（17）和p型GaN基半导体层（15）之间的GaN基半导体制成的发光层（16），以及ZnO系或ITO透明电极层（14）。此外，由3t /（A / pi）×1 / 3-3（t /（A / pi）1/2）表示的等式的值 2 +（t /（A / pi）1/2）3 3以上，透明电极层的厚度为t 并且发光器件（11）的发光层（发光区域）的面积由A表示。使用对于发光区域具有最佳厚度的透明电极层（14）来提高发光效率。

12. 发明授权

US06531408B2 Method for growing ZnO based oxide semiconductor layer and method for manufacturing semiconductor light emitting device using the same 失效
公开(公告)号：US06531408B2
公开(公告)日：2003-03-11
申请号：US09939720
申请日：2001-08-28
申请人： Kakuya Iwata , Paul Fons , Akimasa Yamada , Koji Matsubara , Shigeru Niki , Ken Nakahara
发明人： Kakuya Iwata , Paul Fons , Akimasa Yamada , Koji Matsubara , Shigeru Niki , Ken Nakahara
IPC分类号： H01L2131
CPC分类号： H01L33/0087 , C30B23/02 , C30B25/02 , C30B29/16 , H01L21/0242 , H01L21/02472 , H01L21/02554 , H01L21/02631
摘要： A substrate such as a sapphire substrate or the like is set to a molecular beam epitaxy (MBE) apparatus. Next, the temperature of the substrate is elevated to the temperature which is lower than the temperature at which a predetermined ZnO based oxide semiconductor layer (i.e. function layer) is grown (S1). Then, raw materials containing oxygen radical is irradiated to the substrate to grow a buffer layer made of ZnO based oxide semiconductor (S2). Subsequently, the irradiation of oxygen radical is stopped so as to eliminate the influence of oxygen onto the buffer layer (S3). Then, the temperature of the substrate is elevated to the temperature at which the predetermined ZnO based oxide semiconductor layer is grown (S4). After that, raw materials containing oxygen radical is irradiated so as to sequentially grow a ZnO based oxide semiconductor layer as a function layer (S5). As a result, a ZnO based oxide semiconductor layer with low concentration of residual carrier can be grown, and a semiconductor light emitting device such as light emitting diode and laser diode with high light emitting characteristics can be obtained.

13. 发明申请

US20120181531A1 SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：半导体元件及其制造方法
公开(公告)号：US20120181531A1
公开(公告)日：2012-07-19
申请号：US12672432
申请日：2008-08-07
申请人： Ken Nakahara , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： H01L29/227 , H01L21/36
CPC分类号： C01G9/00 , C01G9/02 , C01P2002/50 , C01P2004/03 , C01P2006/20 , C01P2006/22 , C01P2006/40 , C01P2006/80 , C23C14/086 , C30B23/02 , C30B29/16 , H01L21/02403 , H01L21/02414 , H01L21/02554 , H01L21/02565 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02631 , H01L33/28
摘要： A semiconductor element includes a semiconductor layer mainly composed of MgxZn1-xO (0
摘要翻译：半导体元件包括主要由Mg x Zn 1-x O（0 <= x <1）组成的半导体层，其中包含在作为杂质的半导体层中的锰的密度不大于1×1016cm-3。

14. 发明授权

US08124985B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08124985B2
公开(公告)日：2012-02-28
申请号：US11815759
申请日：2006-02-07
申请人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/60
摘要： There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion (6) including a first conductivity type layer and a second conductivity type layer, made of nitride semiconductor, is provided on a surface of the substrate (1) made of, for example, sapphire or the like. A first electrode (for example, p-side electrode (8)) is provided electrically connected to the first conductivity type layer (for example, p-type layer (5)) on a surface side of the semiconductor lamination portion (6), and a second electrode (for example, n-side electrode (9)) is provided electrically connected to the second conductivity type layer (for example, n-type layer (3)). A part of the semiconductor lamination portion (6) is removed at a surrounding region of a chip of the semiconductor lamination portion (6) by etching so that column portions (6a) stand side by side by leaving the semiconductor lamination portion without etching, and the n-type layer (3) expose around the column portions (6a).
摘要翻译：提供了具有通过有效地取出在半导体层叠部分和衬底内易于重复全反射的光而衰减的能够提高外部量子效率的结构的氮化物半导体发光器件及其制造方法。在由例如蓝宝石等制成的基板（1）的表面上设置包括由氮化物半导体构成的第一导电型层和第二导电型层的半导体层叠部（6）。第一电极（例如，p侧电极（8））在半导体层叠部分（6）的表面侧电连接到第一导电类型层（例如，p型层（5）），并且第二电极（例如，n侧电极（9））被设置为电连接到第二导电类型层（例如，n型层（3））。通过蚀刻在半导体层叠部（6）的芯片的周围区域去除半导体层叠部（6）的一部分，使得柱部（6a）不经蚀刻而离开半导体层叠部而并排放置，并且 n型层（3）围绕柱部（6a）露出。

15. 发明申请

US20110181765A1 IMAGING DEVICE 审中-公开
标题翻译：成像装置
公开(公告)号：US20110181765A1
公开(公告)日：2011-07-28
申请号：US13010276
申请日：2011-01-20
申请人： Ken NAKAHARA
发明人： Ken NAKAHARA
IPC分类号： H04N5/335
CPC分类号： H04N9/045 , H01L27/14643
摘要： A circuit unit is formed on a supporting member, and a solid state imaging element is formed on the circuit unit. Also, a lens mechanism is provided on a front surface of the solid state imaging element. The solid state imaging element, the circuit unit and the lens mechanism are mounted in a frame body. In addition, photoelectric conversion elements are attached to the outside of the frame body. Each of the photoelectric conversion elements is configured to have almost no light reception sensitivity to the light wavelength region of more than 300 nm and have sensitivity to the light wavelength region of 300 nm or less. The photoelectric conversion element thus configured can sense particularly flames, electric sparks and the like among ultraviolet light.
摘要翻译：电路单元形成在支撑构件上，并且固态成像元件形成在电路单元上。此外，在固态成像元件的前表面上设置透镜机构。固态成像元件，电路单元和透镜机构安装在框体中。此外，光电转换元件附接到框体的外侧。每个光电转换元件被配置为对大于300nm的光波长区域几乎没有光接收灵敏度，并且对300nm以下的光波长区域具有灵敏度。这样构成的光电转换元件可以感知紫外光中的特别是火焰，电火花等。

16. 发明授权

US07906791B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US07906791B2
公开(公告)日：2011-03-15
申请号：US11916868
申请日：2006-03-03
申请人： Ken Nakahara
发明人： Ken Nakahara
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/38 , H01L33/42 , H01L2933/0083
摘要： Light extraction efficiency of a semiconductor light-emitting element is improved. A buffer layer, an n-type GaN layer, an InGaN emission layer, and a p-type GaN layer are laminated on a sapphire substrate in a semiconductor light-emitting element. A ZnO layer functioning as a transparent electrode is provided on the p-type GaN layer and concave portions are formed on a surface of the ZnO layer at two-dimensional periodic intervals. If a wavelength of light from the InGaN emission layer in the air is λ, an index of refraction of the ZnO layer at the wavelength λ is nzλ, and a total reflection angle at an interface between the ZnO layer and a medium in contact therewith is θz, a periodic interval Lz between adjacent concave portions is set in a range of λ/nzλ≦Lz≦λ/(nzλ×(1−sin θz)).
摘要翻译：提高了半导体发光元件的光提取效率。在半导体发光元件的蓝宝石衬底上层叠缓冲层，n型GaN层，InGaN发射层和p型GaN层。在p型GaN层上设置有作为透明电极的ZnO层，在ZnO层的表面上以二维周期的间隔形成凹部。如果来自空气中的InGaN发射层的光的波长为λ，则ZnO层在波长λ处的折射率为nzλ，ZnO层与与其接触的介质的界面处的全反射角为相邻凹部之间的周期性间隔Lz设定在λ/nzλ＆lt; ll; Lz＆lt; ll;λ/（nzλ×（1-sin＆amp; tt; z））的范围内。

17. 发明授权

US07872269B2 Gallium nitride semiconductor light emitting element 有权
标题翻译：氮化镓半导体发光元件
公开(公告)号：US07872269B2
公开(公告)日：2011-01-18
申请号：US12085836
申请日：2006-11-29
申请人： Ken Nakahara
发明人： Ken Nakahara
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L33/007 , H01L33/16 , H01S5/22 , H01S5/3202 , H01S5/3216
摘要： Provided is a gallium nitride semiconductor light emitting element capable of stabilizing a drive voltage by reducing carrier depletion attributable to spontaneous polarization and piezo polarization generated at the interface between an AlGaN semiconductor layer and a GaN semiconductor layer.A gallium nitride semiconductor crystal 2 including a light emitting region is formed on the R plane of a sapphire substrate 1. In addition, in another constitution, a gallium nitride semiconductor crystal 2 is formed on the A plane of a GaN substrate 3 or on the M plane of a GaN substrate 4. The growth surface of these gallium nitride semiconductor crystals 2 are not an N (nitrogen) polar face or a Ga polar face but are non-polar faces. This can decrease the strength of an electric field caused by spontaneous polarization and piezo polarization generated at the interface of GaN/AlGaN at the p side. Thus, carrier depletion can be avoided.
摘要翻译：提供一种氮化镓半导体发光元件，其能够通过减少归因于在AlGaN半导体层和GaN半导体层之间的界面处产生的自发极化和压电极化的载流子耗尽来稳定驱动电压。在蓝宝石衬底1的R平面上形成包括发光区域的氮化镓半导体晶体2.此外，在另一构造中，在GaN衬底3的A平面上或在GaN衬底3的A平面上形成氮化镓半导体晶体2 这些氮化镓半导体晶体2的生长面不是N（氮）极面或Ga极性面，而是非极性面。这可以降低在p侧的GaN / AlGaN界面处产生的自发极化和压电极化引起的电场的强度。因此，可以避免载体耗尽。

18. 发明申请

US20100183045A1 SUBSTRATE TEMPERATURE MEASURING APPARATUS AND SUBSTRATE TEMPERATURE MEASURING METHOD 审中-公开
标题翻译：基板温度测量装置和基板温度测量方法
公开(公告)号：US20100183045A1
公开(公告)日：2010-07-22
申请号：US12452809
申请日：2008-07-22
申请人： Ken Nakahara , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： G01J5/00
CPC分类号： G01J5/08 , C23C14/08 , C23C14/086 , C23C14/541 , G01J5/0003 , G01J5/0007 , G01J5/0875 , G01J2005/0048 , G01J2005/0081 , H01L21/0242 , H01L21/02458 , H01L21/02554
摘要： A substrate temperature measuring apparatus includes: a heating source that heat a substrate; a transmission window that transmits therethrough an infrared ray in a range of a wavelength at which the infrared ray cannot transmit through the substrate; and a temperature-measuring instrument having a sensitivity range including the range of the wavelength, and measuring a substrate temperature of the substrate by analyzing an infrared ray radiated from the substrate heated by the heating source and having transmitted through the transmission window.
摘要翻译：基板温度测量装置包括：加热基板的加热源; 透射窗，其透过红外线不能透过基板的波长范围内的红外线; 以及温度测量仪器，其具有包括波长范围的灵敏度范围，并且通过分析从由所述加热源加热并已透射通过透射窗的衬底辐射的红外线来测量衬底的衬底温度。

19. 发明申请

US20090057695A1 Nitride Semiconductor Device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20090057695A1
公开(公告)日：2009-03-05
申请号：US12223784
申请日：2007-02-08
申请人： Ken Nakahara
发明人： Ken Nakahara
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/0079 , H01L33/32
摘要： A nitride semiconductor device according to the present invention sequentially includes at least an n-electrode, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer includes: an n-type GaN contact layer including n-type impurity-doped GaN having an electron concentration ranging from 5×1016 cm−3 to 5×1018 cm−3; the n-electrode provided on one of a main surface of the n-type GaN contact layer; and a generating layer provided on other main surface of the n-type GaN contact layer, including at least any one of AlxGa1-xN (0
摘要翻译：根据本发明的氮化物半导体器件至少依次包括n电极，n型半导体层，有源层和p型半导体层。 n型半导体层包括：n型GaN接触层，其包含具有5×10 16 cm -3至5×10 18 cm -3的电子浓度的n型杂质掺杂的GaN; n电极，设置在n型GaN接触层的主表面之一上; 和包含Al x Ga 1-x N（0

20. 发明申请

US20080308836A1 Nitride Semiconductor Device and Method for Growing Nitride Semiconductor Crystal Layer 审中-公开
标题翻译：氮化物半导体器件和氮化物半导体晶体层生长方法
公开(公告)号：US20080308836A1
公开(公告)日：2008-12-18
申请号：US11883062
申请日：2006-01-26
申请人： Ken Nakahara , Kentaro Tamura
发明人： Ken Nakahara , Kentaro Tamura
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L21/02658 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/66454 , H01L29/66462 , H01L29/7787 , H01L33/007 , H01L33/12
摘要： There are provided a nitride semiconductor device such as a nitride semiconductor light emitting device, a transistor device or the like, obtained by forming a buffer layer of a single crystal of the nitride semiconductor, in which both a-axis and c-axis are aligned, directly on a substrate lattice-mismatched with the nitride semiconductor without forming an amorphous low temperature buffer layer, and growing epitaxially the nitride semiconductor layer on the buffer layer of the single crystal. In this device, a single crystal buffer layer (2), made of a single crystal of AlxGayIn1-x-yN (0≦x≦1, 0≦y≦1 and 0≦x+y≦1), in which a-axis and c-axis are aligned, is directly formed on a substrate (1) lattice-mismatched with nitride semiconductor, and a nitride semiconductor layer (3) is epitaxially grown on the buffer layer (2) of the single crystal. The buffer layer of the single crystal can be formed by the use of a PLD method.
摘要翻译：提供了一种氮化物半导体器件，例如氮化物半导体发光器件，晶体管器件等，其通过形成氮化物半导体的单晶的缓冲层而获得，其中a轴和c轴都被对准直接在与氮化物半导体晶格失配的衬底上，而不形成非晶低温缓冲层，并且在单晶缓冲层上外延生长氮化物半导体层。在该器件中，由AlxGayIn1-x-yN（0≤x≤1,0<= y <= 1和0 <= x + y <= 1）的单晶制成的单晶缓冲层（2）），其中a轴和c轴对准，直接形成在与氮化物半导体晶格失配的衬底（1）上，并且氮化物半导体层（3）外延生长在单晶。单晶的缓冲层可以通过使用PLD法形成。

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