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1. 发明授权

US06649434B2 Method of manufacturing semiconductor device having ZnO based oxide semiconductor layer 失效
公开(公告)号：US06649434B2
公开(公告)日：2003-11-18
申请号：US09950831
申请日：2001-09-13
申请人： Kakuya Iwata , Paul Fons , Koji Matsubara , Akimasa Yamada , Shigeru Niki , Ken Nakahara
发明人： Kakuya Iwata , Paul Fons , Koji Matsubara , Akimasa Yamada , Shigeru Niki , Ken Nakahara
IPC分类号： H01L2120
CPC分类号： H01L33/0087 , C30B23/02 , C30B29/16 , H01L21/0242 , H01L21/02472 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： In the case in which a ZnO based oxide semiconductor layer is to be hetero-epitaxially grown on a substrate formed of a material which is different from that of a ZnO based oxide semiconductor, the ZnO based oxide semiconductor layer is grown at a high temperature of 500° C. or more, and supply of oxygen is stopped and gradual cooling is carried out until a substrate temperature is lowered to 350° C. or less after the growth of the ZnO based oxide semiconductor layer is completed. As a result, it is possible to suppress the generation of dislocations or crystal defects over an epitaxial grown layer based on the atmosphere while the substrate temperature is lowered after the growth of the semiconductor layer and a difference in a coefficient of thermal expansion, thereby obtaining a semiconductor device having a high quality ZnO based oxide semiconductor layer which has an excellent crystalline property and a semiconductor light emitting device having the high characteristics.

2. 发明授权

US06638846B2 Method of growing p-type ZnO based oxide semiconductor layer and method of manufacturing semiconductor light emitting device 失效
公开(公告)号：US06638846B2
公开(公告)日：2003-10-28
申请号：US09950830
申请日：2001-09-13
申请人： Kakuya Iwata , Paul Fons , Koji Matsubara , Akimasa Yamada , Shigeru Niki , Ken Nakahara
发明人： Kakuya Iwata , Paul Fons , Koji Matsubara , Akimasa Yamada , Shigeru Niki , Ken Nakahara
IPC分类号： H01L2144
CPC分类号： H01L33/0087 , C30B23/02 , C30B29/16
摘要： A ZnO based oxide semiconductor layer is grown on a sapphire substrate 1 by supplying, for example, raw materials made of Zn and O constituting ZnO and a p-type dopant material made of N without supplying an n-type dopant material (a-step). By stopping the supply of the material of O and further supplying an n-type dopant material made of Ga, the semiconductor layer is doped with the p-type dopant and the n-type dopant, thereby forming a p-type ZnO layer (2a) (b-step). By repeating the steps (a) and (b) plural times, a p-type ZnO based oxide semiconductor layer is grown. As a result, N to be the p-type dopant can be doped in a stable carrier concentration also during high temperature growth in which a residual carrier concentration can be reduced, and the carrier concentration of the p-type layer made of the ZnO based oxide semiconductor can be increased sufficiently.

3. 发明授权

US06531408B2 Method for growing ZnO based oxide semiconductor layer and method for manufacturing semiconductor light emitting device using the same 失效
公开(公告)号：US06531408B2
公开(公告)日：2003-03-11
申请号：US09939720
申请日：2001-08-28
申请人： Kakuya Iwata , Paul Fons , Akimasa Yamada , Koji Matsubara , Shigeru Niki , Ken Nakahara
发明人： Kakuya Iwata , Paul Fons , Akimasa Yamada , Koji Matsubara , Shigeru Niki , Ken Nakahara
IPC分类号： H01L2131
CPC分类号： H01L33/0087 , C30B23/02 , C30B25/02 , C30B29/16 , H01L21/0242 , H01L21/02472 , H01L21/02554 , H01L21/02631
摘要： A substrate such as a sapphire substrate or the like is set to a molecular beam epitaxy (MBE) apparatus. Next, the temperature of the substrate is elevated to the temperature which is lower than the temperature at which a predetermined ZnO based oxide semiconductor layer (i.e. function layer) is grown (S1). Then, raw materials containing oxygen radical is irradiated to the substrate to grow a buffer layer made of ZnO based oxide semiconductor (S2). Subsequently, the irradiation of oxygen radical is stopped so as to eliminate the influence of oxygen onto the buffer layer (S3). Then, the temperature of the substrate is elevated to the temperature at which the predetermined ZnO based oxide semiconductor layer is grown (S4). After that, raw materials containing oxygen radical is irradiated so as to sequentially grow a ZnO based oxide semiconductor layer as a function layer (S5). As a result, a ZnO based oxide semiconductor layer with low concentration of residual carrier can be grown, and a semiconductor light emitting device such as light emitting diode and laser diode with high light emitting characteristics can be obtained.

4. 发明授权

US06472241B2 Radical cell device and method for manufacturing groups II-VI compound semiconductor device 有权
标题翻译：激光电池器件及其制造方法II-VI族化合物半导体器件
公开(公告)号：US06472241B2
公开(公告)日：2002-10-29
申请号：US09939719
申请日：2001-08-28
申请人： Kakuya Iwata , Paul Fons , Akimasa Yamada , Koji Matsubara , Shigeru Niki , Ken Nakahara
发明人： Kakuya Iwata , Paul Fons , Akimasa Yamada , Koji Matsubara , Shigeru Niki , Ken Nakahara
IPC分类号： H01L2100
CPC分类号： C30B23/06 , H01L33/0087
摘要： The closing plates (61b), (61c) are provided on the both end portions of the cylindrical insulator body (61a), the gas introduction tube for introducing a gaseous substance is inserted into one plate (61b) of the closing plates of the plasma chamber (61) for making the gaseous substance plasmatic within it, and on the other plate (61c), the plasma radiation outlet (61d) is provided. Then, nearby the plasma jet (63) outgoing from the radiation outlet, the electrode (64) for applying a high electric field of an ion trapper is provided so as to be opposed to the grounded electrode (65) interposed the plasma jet between them. This electrode for applying a high electric field is fixed on the grounded metal plate (61e) provided on the other plate (61c) via the insulation porcelain (66) made of MgO or quartz. As a result, a radical cell device which does not blow-off and mix up Al into the layer epitaxially grown is obtained ,and a Groups II-VI compound semiconductor device because undoped Al is not contained in the semiconductor layers.
摘要翻译：封闭板（61b），（61c）设置在圆筒形绝缘体（61a）的两端部，将用于引入气态物质的气体导入管插入等离子体的封闭板的一个板（61b）用于在其内制备气态物质的室（61），在另一个板（61c）上设置有等离子体辐射出口（61d）。然后，在从辐射出口排出的等离子体射流（63）附近，设置用于施加离子捕获器的高电场的电极（64），以与插入其间的等离子体射流的接地电极（65）相对。用于施加高电场的电极经由由MgO或石英制成的绝缘瓷（66）固定在设置在另一板（61c）上的接地金属板（61e）上。结果，可以获得不将Al吹出和外延生长的层的自由基电池器件，由于在半导体层中不含有未掺杂的Al的II-VI族化合物半导体器件。

5. 发明授权

US06770913B2 ZnOSSe compound semiconductor, integrated circuit using the semiconductor and method of manufacturing the semiconductor and the integrated circuit 失效
标题翻译： ZnOSSe化合物半导体，使用半导体的集成电路及其制造方法以及集成电路
公开(公告)号：US06770913B2
公开(公告)日：2004-08-03
申请号：US10234160
申请日：2002-09-05
申请人： Kakuya Iwata , Shigeru Niki , Paul Fons , Akimasa Yamada , Koji Matsubara
发明人： Kakuya Iwata , Shigeru Niki , Paul Fons , Akimasa Yamada , Koji Matsubara
IPC分类号： H01L3300
CPC分类号： H01S5/327 , H01L33/28 , H01S5/021
摘要： A light-emitting device includes a silicon substrate, a ZnOSSe layer provided on the silicon substrate that is lattice-matched to the silicon substrate, and a separate confinement heterostructure light-emitting layer that is provided on the ZnOSSe layer and includes an active layer and upper and lower clad layers.
摘要翻译：发光器件包括硅衬底，设置在与硅衬底晶格匹配的硅衬底上的ZnOSSe层和设置在ZnOSSe层上并包括有源层的单独限制性异质结构发光层，以及上下包层。

6. 发明申请

US20050284518A1 Compound solar cell and process for producing the same 审中-公开
标题翻译：复合太阳能电池及其制造方法
公开(公告)号：US20050284518A1
公开(公告)日：2005-12-29
申请号：US11159233
申请日：2005-06-23
申请人： Akimasa Yamada , Hitoshi Tampo , Koji Matsubara , Shigeru Niki , Keiichiro Sakurai , Shogo Ishizuka , Kakuya Iwata
发明人： Akimasa Yamada , Hitoshi Tampo , Koji Matsubara , Shigeru Niki , Keiichiro Sakurai , Shogo Ishizuka , Kakuya Iwata
IPC分类号： H01L31/00
CPC分类号： H01L31/022425 , H01L31/0749 , Y02E10/541
摘要： A solar cell which comprises a back metal electrode and a light-absorbing layer comprising a p-type CIGS semiconductor on a substrate in this order, wherein the solar cell further comprises a p-type or low carrier concentration n-type semiconductor layer comprising ZnO between the light-absorbing layer and the back metal electrode, and a process for producing the solar cell.
摘要翻译：一种太阳能电池，其特征在于，包括背面金属电极和在基板上依次包含p型CIGS半导体的光吸收层，其中所述太阳能电池还包括p型或低载流子浓度的n型半导体层，其包含ZnO 在光吸收层和背面金属电极之间，以及太阳能电池的制造方法。

7. 发明授权

US08012546B2 Method and apparatus for producing semiconductor films and related devices 有权
标题翻译：用于制造半导体膜及相关器件的方法和装置
公开(公告)号：US08012546B2
公开(公告)日：2011-09-06
申请号：US11843936
申请日：2007-08-23
申请人： Shogo Ishizuka , Shigeru Niki , Keiichiro Sakurai , Akimasa Yamada , Koji Matsubara
发明人： Shogo Ishizuka , Shigeru Niki , Keiichiro Sakurai , Akimasa Yamada , Koji Matsubara
IPC分类号： H05H1/24
CPC分类号： H01L31/072 , C23C14/0026 , C23C14/0623 , C23C14/243 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A method for producing a semiconductor film having a chalcopyrite structure including a Ib group element, a IIIb group element and a VIb group element including selenium, the method including cracking selenium with plasma to generate radical selenium, and using the radical selenium in the process of forming the semiconductor film.
摘要翻译：一种具有包括Ib族元素，IIIb族元素和包含硒的VIb族元素的黄铜矿结构的半导体膜的半导体膜的制造方法，其包括用等离子体裂解硒以产生自由基硒的方法，以及在使用过程中使用自由基硒形成半导体膜。

8. 发明授权

US08304804B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08304804B2
公开(公告)日：2012-11-06
申请号：US12601248
申请日：2008-05-13
申请人： Hajime Shibata , Hitoshi Tampo , Koji Matsubara , Akimasa Yamada , Keiichiro Sakurai , Shogo Ishizuka , Shigeru Niki
发明人： Hajime Shibata , Hitoshi Tampo , Koji Matsubara , Akimasa Yamada , Keiichiro Sakurai , Shogo Ishizuka , Shigeru Niki
IPC分类号： H01L33/00
CPC分类号： H01L33/28
摘要： An object of the present invention is to increase the light emission efficiency of a ZnO-based optical semiconductor device. An optical semiconductor device B has a structure which includes n-type Zn1-zMgzO (barrier layer) 11/Zn1-zMgxO (active layer) 15/p-type Zn1-yMgyO (barrier layer) 17, and light is emitted from the active layer 15. Electrodes 23, 21 are respectively formed on barrier layers 11, 17. By applying a voltage between the two electrodes 23, 21, light is emitted from ZnO (active layer) 15. Here, there are a relationship of x
摘要翻译：本发明的目的在于提高ZnO系光半导体装置的发光效率。光学半导体器件B具有包括n型Zn1-zMgzO（势垒层）11 / Zn1-xMgxO（有源层）15 / p型Zn1-yMgyO（势垒层）17的结构，并且从活性物质发射光电极23,21分别形成在阻挡层11,17上。通过在两个电极23,21之间施加电压，从ZnO（有源层）15发射光。这里，存在x

9. 发明申请

US20100163864A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100163864A1
公开(公告)日：2010-07-01
申请号：US12601248
申请日：2008-05-13
申请人： Hajime Shibata , Hitoshi Tampo , Koji Matsubara , Akimasa Yamada , Keiichiro Sakurai , Shogo Ishizuka , Shigeru Niki
发明人： Hajime Shibata , Hitoshi Tampo , Koji Matsubara , Akimasa Yamada , Keiichiro Sakurai , Shogo Ishizuka , Shigeru Niki
IPC分类号： H01L33/00
CPC分类号： H01L33/28
摘要： An object of the present invention is to increase the light emission efficiency of a ZnO-based optical semiconductor device. An optical semiconductor device B has a structure which includes n-type Zn1-zMgzO (barrier layer) 11/Zn1-zMgxO (active layer) 15/p-type Zn1-yMgyO (barrier layer) 17, and light is emitted from the active layer 15. Electrodes 23, 21 are respectively formed on barrier layers 11, 17. By applying a voltage between the two electrodes 23, 21, light is emitted from ZnO (active layer) 15. Here, there are a relationship of x
摘要翻译：本发明的目的在于提高ZnO系光半导体装置的发光效率。光学半导体器件B具有包括n型Zn1-zMgzO（势垒层）11 / Zn1-xMgxO（有源层）15 / p型Zn1-yMgyO（势垒层）17的结构，并且从活性物质发射光电极23,21分别形成在阻挡层11,17上。通过在两个电极23,21之间施加电压，从ZnO（有源层）15发射光。这里，存在x

10. 发明申请

US20060218431A1 Image forming apparatus and communication data handling method therein 失效
标题翻译：图像形成装置及其中的通信数据处理方法
公开(公告)号：US20060218431A1
公开(公告)日：2006-09-28
申请号：US11387148
申请日：2006-03-21
申请人： Hiroshi Tanaka , Kanehiro Machiya , Hironori Sakaguchi , Koji Matsubara , Kazuhiro Nakamura
发明人： Hiroshi Tanaka , Kanehiro Machiya , Hironori Sakaguchi , Koji Matsubara , Kazuhiro Nakamura
IPC分类号： G06F11/00
CPC分类号： G06F11/1443 , G03G15/0855 , G03G15/0863 , G03G15/0865 , G03G21/1882 , G03G2215/0697 , G06F11/004
摘要： The present invention aims at avoiding a hung-up in the case where a command is sent from a controller within a printer but there is no response to the command from the unit side within the printer, due to a faulty communication or the like, and also in the case where a noise is introduced in the communication data. In the present invention, based on a command sent to the unit side, a data amount of a response from the unit side to this command is predicted, and also a threshold value of response time is provided (S21), which is the time when from the command is sent until the time when the response is received. After the command is sent (S23) until the threshold value of the response time elapses, the receive data is sequentially stored in the receive buffer up to when the data amount from the unit side reaches the predicted data amount (S28, 32, 34). If the data amount from the unit side does not reach the predicted amount even after the lapse of threshold value of the response time, an error processing is executed (S43, 45, 47).
摘要翻译：本发明的目的是避免在打印机内从控制器发出命令的情况下，由于通信不正常等原因，不能响应打印机内的单元侧的命令，以及在通信数据中引入了噪声的情况下也是如此。在本发明中，基于发送到单元侧的命令，预测从单元侧到该命令的响应的数据量，并且还提供响应时间的阈值（S21），这是时间当命令发送到接收到响应的时候。在命令发送（S23）直到响应时间的阈值过去之后，接收数据被顺序地存储在接收缓冲器中，直到来自单元侧的数据量达到预测数据量（S 28,32， 34）。如果即使经过了响应时间的阈值之后，从单元侧的数据量也未达到预测量，则执行错误处理（S43,45,47）。

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