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1. 发明授权

US08124985B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08124985B2
公开(公告)日：2012-02-28
申请号：US11815759
申请日：2006-02-07
申请人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/60
摘要： There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion (6) including a first conductivity type layer and a second conductivity type layer, made of nitride semiconductor, is provided on a surface of the substrate (1) made of, for example, sapphire or the like. A first electrode (for example, p-side electrode (8)) is provided electrically connected to the first conductivity type layer (for example, p-type layer (5)) on a surface side of the semiconductor lamination portion (6), and a second electrode (for example, n-side electrode (9)) is provided electrically connected to the second conductivity type layer (for example, n-type layer (3)). A part of the semiconductor lamination portion (6) is removed at a surrounding region of a chip of the semiconductor lamination portion (6) by etching so that column portions (6a) stand side by side by leaving the semiconductor lamination portion without etching, and the n-type layer (3) expose around the column portions (6a).
摘要翻译：提供了具有通过有效地取出在半导体层叠部分和衬底内易于重复全反射的光而衰减的能够提高外部量子效率的结构的氮化物半导体发光器件及其制造方法。在由例如蓝宝石等制成的基板（1）的表面上设置包括由氮化物半导体构成的第一导电型层和第二导电型层的半导体层叠部（6）。第一电极（例如，p侧电极（8））在半导体层叠部分（6）的表面侧电连接到第一导电类型层（例如，p型层（5）），并且第二电极（例如，n侧电极（9））被设置为电连接到第二导电类型层（例如，n型层（3））。通过蚀刻在半导体层叠部（6）的芯片的周围区域去除半导体层叠部（6）的一部分，使得柱部（6a）不经蚀刻而离开半导体层叠部而并排放置，并且 n型层（3）围绕柱部（6a）露出。

2. 发明申请

US20100019257A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20100019257A1
公开(公告)日：2010-01-28
申请号：US11815759
申请日：2006-02-07
申请人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/60
摘要： There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion (6) including a first conductivity type layer and a second conductivity type layer, made of nitride semiconductor, is provided on a surface of the substrate (1) made of, for example, sapphire or the like. A first electrode (for example, p-side electrode (8)) is provided electrically connected to the first conductivity type layer (for example, p-type layer (5)) on a surface side of the semiconductor lamination portion (6), and a second electrode (for example, n-side electrode (9)) is provided electrically connected to the second conductivity type layer (for example, n-type layer (3)). A part of the semiconductor lamination portion (6) is removed at a surrounding region of a chip of the semiconductor lamination portion (6) by etching so that column portions (6a) stand side by side by leaving the semiconductor lamination portion without etching, and the n-type layer (3) expose around the column portions (6a).
摘要翻译：提供了具有通过有效地取出在半导体层叠部分和衬底内易于重复全反射的光而衰减的能够提高外部量子效率的结构的氮化物半导体发光器件及其制造方法。在由例如蓝宝石等制成的基板（1）的表面上设置包括由氮化物半导体构成的第一导电型层和第二导电型层的半导体层叠部（6）。第一电极（例如，p侧电极（8））在半导体层叠部分（6）的表面侧电连接到第一导电类型层（例如，p型层（5）），并且第二电极（例如，n侧电极（9））被设置为电连接到第二导电类型层（例如，n型层（3））。通过蚀刻在半导体层叠部（6）的芯片的周围区域去除半导体层叠部（6）的一部分，使得柱部（6a）不经蚀刻而离开半导体层叠部而并排放置，并且 n型层（3）围绕柱部（6a）露出。

3. 发明申请

US20080258166A1 Semiconductor Light Emitting Device and Method for Manufacturing the Same 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20080258166A1
公开(公告)日：2008-10-23
申请号：US11596124
申请日：2005-05-10
申请人： Mitsuhiko Sakai , Shinichi Kohda , Masayuki Sonobe , Ken Nakahara
发明人： Mitsuhiko Sakai , Shinichi Kohda , Masayuki Sonobe , Ken Nakahara
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32
摘要： There is provided a semiconductor light emitting semiconductor device including an n-side electrode which has a structure capable of stably suppressing the contact resistance between the n-side electrode and a nitride semiconductor layer. Further, there is provided a light emitting device and a manufacturing method wherein an ohmic contact between the n-side electrode and the nitride semiconductor layer can be obtained by a simple manufacturing process, and the n-side electrode has an Au layer on a top surface to facilitate wire bonding. Semiconductor layers (2-8) to form a light emitting layer are laminated on a surface of a substrate (1) made of, for example, a sapphire (Al2O3 single crystal) or the like and a p-side electrode (10) is formed on the surface thereof thorough a light transmitting conductive layer (9). An n-side electrode (11) is formed on an exposed surface of an n-type layer (4), exposed by removing a part of the semiconductor layers (4-8) by etching. The n-side electrode includes actually an Al layer (11a) in contact with the n-type layer, a barrier metal layer (11b) and an Au layer (11c).
摘要翻译：提供一种包括具有能够稳定地抑制n侧电极和氮化物半导体层之间的接触电阻的结构的n侧电极的半导体发光半导体器件。此外，提供了一种发光器件及其制造方法，其中通过简单的制造工艺可以获得n侧电极和氮化物半导体层之间的欧姆接触，并且n侧电极在顶部具有Au层表面方便引线接合。形成发光层的半导体层（2〜8）层压在由例如蓝宝石（Al 2 O 3·N 3）构成的基板（1）的表面上 >单晶）等，并且通过透光导电层（9）在其表面上形成p侧电极（10）。在n型层（4）的暴露表面上形成n侧电极（11），通过蚀刻去除一部分半导体层（4-8）而露出。 n侧电极实际上包括与n型层接触的Al层（11a），阻挡金属层（11b）和Au层（11c）。

4. 发明申请

US20090206357A1 Semiconductor Light Emitting Device 审中-公开
标题翻译：半导体发光装置
公开(公告)号：US20090206357A1
公开(公告)日：2009-08-20
申请号：US11884456
申请日：2006-02-15
申请人： Norikazu Ito , Kazuaki Tsutsumi , Toshio Nishida , Masayuki Sonobe , Mitsuhiko Sakai , Atsushi Yamaguchi
发明人： Norikazu Ito , Kazuaki Tsutsumi , Toshio Nishida , Masayuki Sonobe , Mitsuhiko Sakai , Atsushi Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： There is provided a nitride semiconductor light emitting device in which a semiconductor layer is not broken easily even when a reverse voltage is applied or even in long time operation, and excellent reliability is obtained, by preventing semiconductor layers from deterioration when manufacturing a device. On a surface of a substrate (1), a semiconductor lamination portion (6) made of nitride semiconductor, including a first conductivity type layer (p-type layer (5)) and a second conductivity type layer (n-type layer (3)), is formed, a p-side electrode (8) is provided through a light transmitting conductive layer (7) thereon electrically connected to the p-type layer (5), and an n-side electrode (9) is provided electrically connected to the n-type layer (3) of the lower layer side of the semiconductor lamination portion(6). A mesa-like semiconductor lamination portion (6a) is formed by removing a part of the semiconductor lamination portion (6) around a chip by etching, and the mesa-like semiconductor lamination portion (6a) is formed such that a corner part having an angle of 90 degrees or less is rounded and has a curved line in a plan shape, thereby not to have an angle of 90 degrees or less on corner parts.
摘要翻译：提供了一种氮化物半导体发光器件，其中即使当施加反向电压或者甚至长时间操作时，半导体层也不容易损坏，并且通过在制造器件时防止半导体层劣化，可以获得优异的可靠性。在基板（1）的表面上，由氮化物半导体构成的包括第一导电型层（p型层（5））和第二导电型层（n型层（3））的半导体层叠部（6））），通过其上与p型层（5）电连接的透光导电层（7）设置p侧电极（8），并且n侧电极（9）电气地连接到半导体层叠部分（6）的下层侧的n型层（3）。通过蚀刻去除芯片周围的半导体层叠部分（6）的一部分形成台面状半导体层叠部（6a），并且形成台面状半导体层叠部（6a），使得具有 90度以下的角度是圆形的，并且具有平面形状的曲线，从而在角部不具有90度或更小的角度。

5. 发明申请

US20090278144A1 Nitride Semiconductor Light Emitting Device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20090278144A1
公开(公告)日：2009-11-12
申请号：US12085564
申请日：2006-11-28
申请人： Masayuki Sonobe , Norikazu Ito , Mitsuhiko Sakai
发明人： Masayuki Sonobe , Norikazu Ito , Mitsuhiko Sakai
IPC分类号： H01L33/00
CPC分类号： H01S5/18358 , B82Y20/00 , H01L33/105 , H01L33/32 , H01S5/34333
摘要： There is provided a nitride semiconductor light emitting device having a light reflection layer capable of preventing reflectivity from lowering and luminance from lowering due to deterioration of quality of an active layer. A nitride semiconductor laser includes at least a light emitting layer forming portion (3) provided on a first light reflection layer (2) provided on a substrate (1). The first light reflection layer (2) is formed with laminating a low refractivity layer (21) and a high refractivity layer (22) which have a different refractivity from each other, and the low refractivity layer (21) of the first light reflection layer is formed with a single layer structure of an AlxGa1-xN layer (0≦x≦1), and the high refractivity layer (22) of the first light reflection layer is formed with a multi layer structure formed by laminating alternately an AlyGa1-yN layer (0≦y≦0.5 and y
摘要翻译：提供一种氮化物半导体发光器件，其具有能够防止由于有源层的质量劣化而引起的反射率降低和降低亮度的光反射层。氮化物半导体激光器至少包括设置在设置在基板（1）上的第一光反射层（2）上的发光层形成部（3）。第一光反射层（2）形成为具有彼此不同的折射率的低折射率层（21）和高折射率层（22），并且第一光反射层的低折射率层（21）形成有Al x Ga 1-x N层（0 <= x <= 1）的单层结构，并且第一光反射层的高折射率层（22）形成有多层结构，其通过交替层叠AlyGa1 -yN层（0 <= y <= 0.5和y

6. 发明授权

US08093606B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08093606B2
公开(公告)日：2012-01-10
申请号：US12085564
申请日：2006-11-28
申请人： Masayuki Sonobe , Norikazu Ito , Mitsuhiko Sakai
发明人： Masayuki Sonobe , Norikazu Ito , Mitsuhiko Sakai
IPC分类号： H01L33/00
CPC分类号： H01S5/18358 , B82Y20/00 , H01L33/105 , H01L33/32 , H01S5/34333
摘要： There is provided a nitride semiconductor light emitting device having a light reflection layer capable of preventing reflectivity from lowering and luminance from lowering due to deterioration of quality of an active layer. A nitride semiconductor laser includes at least a light emitting layer forming portion (3) provided on a first light reflection layer (2) provided on a substrate (1). The first light reflection layer (2) is formed with laminating a low refractivity layer (21) and a high refractivity layer (22) which have a different refractivity from each other, and the low refractivity layer (21) of the first light reflection layer is formed with a single layer structure of an AlxGa1−xN layer (0≦x≦1), and the high refractivity layer (22) of the first light reflection layer is formed with a multi layer structure formed by laminating alternately an AlyGa1−yN layer (0≦y≦0.5 and y
摘要翻译：提供一种氮化物半导体发光器件，其具有能够防止由于有源层的质量劣化而引起的反射率降低和降低亮度的光反射层。氮化物半导体激光器至少包括设置在设置在基板（1）上的第一光反射层（2）上的发光层形成部（3）。第一光反射层（2）形成为具有彼此不同的折射率的低折射率层（21）和高折射率层（22），并且第一光反射层的低折射率层（21）形成有Al x Ga 1-x N层（0＆amp; nlE; x＆nlE; 1）的单层结构，并且第一光反射层的高折射率层（22）形成有多层结构，其通过交替层叠AlyGa1-yN 层（0＆amp; nlE; y＆nlE; 0.5和y n1; 1和t

7. 发明申请

US20070102692A1 Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20070102692A1
公开(公告)日：2007-05-10
申请号：US10551918
申请日：2005-07-11
申请人： Hirokazu Asahara , Mitsuhiko Sakai , Toshio Nishida , Masayuki Sonobe
发明人： Hirokazu Asahara , Mitsuhiko Sakai , Toshio Nishida , Masayuki Sonobe
IPC分类号： H01L29/06
CPC分类号： H01L33/387
摘要： A semiconductor light emitting device includes a semiconductor light emitting portion, a front surface electrode provided on one side of the semiconductor light emitting portion, an electrically conductive substrate provided on the other side of the semiconductor light emitting portion, the electrically conductive substrate being transparent to a wavelength of light emitted from the semiconductor light emitting portion, a rear surface electrode having a pattern in ohmic contact with a first region of a back surface of the electrically conductive substrate opposite from the semiconductor light emitting portion, and a rear surface insulation layer covering a second region of the back surface of the electrically conductive substrate other than the first region, the rear surface insulation layer being transparent to the wavelength of the light emitted from the semiconductor light emitting portion.
摘要翻译：半导体发光器件包括半导体发光部分，设置在半导体发光部分一侧的前表面电极，设置在半导体发光部分另一侧的导电基片，导电基片对从半导体发光部发射的光的波长，与导电性基板的与半导体发光部相反的背面的第一区域欧姆接触的图案的背面电极，以及背面绝缘层覆盖所述导电基板的除了所述第一区域以外的所述背面的第二区域，所述背面绝缘层对于从所述半导体发光部发出的光的波长透明。

8. 发明申请

US20060273335A1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US20060273335A1
公开(公告)日：2006-12-07
申请号：US10551922
申请日：2005-07-11
申请人： Hirokazu Asahara , Mitsuhiko Sakai , Masayuki Sonobe , Toshio Nishida
发明人： Hirokazu Asahara , Mitsuhiko Sakai , Masayuki Sonobe , Toshio Nishida
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an active layer sandwiched between the first and second contact layers. The device further includes a transparent electrode which substantially entirely covers a surface of the second contact layer in ohmic contact with the surface of the second contact layer and is transparent to a wavelength of light emitted from the semiconductor light emitting portion, and a metal reflection film which is opposed to substantially the entire surface of the transparent electrode and electrically connected to the transparent electrode, and reflects the light emitted from the semiconductor light emitting portion and passing through the transparent electrode toward the semiconductor light emitting portion.
摘要翻译：半导体发光器件包括具有第一导电性的第一接触层，第二导电性的第二接触层和夹在第一和第二接触层之间的有源层的半导体发光部。该装置还包括透明电极，其基本上完全覆盖第二接触层的与第二接触层的表面欧姆接触的表面，并且对于从半导体发光部分发射的光的波长是透明的，并且金属反射膜其与透明电极的大致整个表面相对并且电连接到透明电极，并且反射从半导体发光部分发射的光并且透过透明电极朝向半导体发光部分。

9. 发明授权

US07375380B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07375380B2
公开(公告)日：2008-05-20
申请号：US10551922
申请日：2005-07-11
申请人： Hirokazu Asahara , Mitsuhiko Sakai , Masayuki Sonobe , Toshio Nishida
发明人： Hirokazu Asahara , Mitsuhiko Sakai , Masayuki Sonobe , Toshio Nishida
IPC分类号： H01L27/15 , H01L29/22
CPC分类号： H01L33/42 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an active layer sandwiched between the first and second contact layers. The device further includes a transparent electrode which substantially entirely covers a surface of the second contact layer in ohmic contact with the surface of the second contact layer and is transparent to a wavelength of light emitted from the semiconductor light emitting portion, and a metal reflection film which is opposed to substantially the entire surface of the transparent electrode and electrically connected to the transparent electrode, and reflects the light emitted from the semiconductor light emitting portion and passing through the transparent electrode toward the semiconductor light emitting portion.
摘要翻译：半导体发光器件包括具有第一导电性的第一接触层，第二导电性的第二接触层和夹在第一和第二接触层之间的有源层的半导体发光部。该装置还包括透明电极，其基本上完全覆盖第二接触层的与第二接触层的表面欧姆接触的表面，并且对于从半导体发光部分发射的光的波长是透明的，并且金属反射膜其与透明电极的大致整个表面相对并且电连接到透明电极，并且反射从半导体发光部分发射的光并且透过透明电极朝向半导体发光部分。

10. 发明申请

US20090026468A1 Semiconductor Light Emitting Element 有权
公开(公告)号：US20090026468A1
公开(公告)日：2009-01-29
申请号：US12224524
申请日：2007-02-22
申请人： Mitsuhiko Sakai , Tadahiro Okazaki , Ken Nakahara
发明人： Mitsuhiko Sakai , Tadahiro Okazaki , Ken Nakahara
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/20 , H01L33/32
摘要： In a semiconductor light emitting element, a p-type layer (220), an active layer (230) and an n-type layer (240) are laminated on a substrate in this order. The n-type layer (240) is formed with a rectangular n-side electrode (241) whose width in one direction is equal to that of the n-type layer (240). The thickness t of the n-type layer (240) satisfies Formula 1 below. The semiconductor light emitting element includes a side surface (270) extending in the lamination direction and formed with a plurality of projections (271). Supposing that the wavelength of the light from the active-layer (230) is λ and the index of refraction of the n-type layer (240) or the p-type layer (220) is n, the average WA of widths at bottoms of the projections is set to satisfy WA≧λ/n. t ≥ ρ   J 0  e 4  γκ B  T · W  ( L - W ) Formula   1 where L is width of the n-type layer in a direction different from the one direction, T is absolute temperature, W is width of the n-side electrode in a direction different from the one direction, J0 is current density at the contact portion between the n-side electrode and the n-type layer, e is elementary charge, γ is diode ideality factor, κB is Boltzmann constant, ρ is specific resistance of the n-type semiconductor layer.

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