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1. 发明专利

TW200406850A 半導體裝置及使用其之顯示裝置 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE USING THE SAME 审中-公开
简体标题：半导体设备及使用其之显示设备 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE USING THE SAME
公开(公告)号：TW200406850A
公开(公告)日：2004-05-01
申请号：TW092106798
申请日：2003-03-26
申请人：川崎雅司 MASASHI KAWASAKI , 大野英男 HIDEO OHNO , 夏普股份有限公司 SHARP KABUSHIKI KAISHA
发明人：吉岡宏人 HIROTO YOSHIOKA , 藤田達也 TATSUYA FUJITA , 越智久雄 HISAO OCHI , 杉原利典 TOSHINORI SUGIHARA , 原猛 TAKESHI HARA , 川崎雅司 MASASHI KAWASAKI , 大野英男 HIDEO OHNO
IPC分类号： H01L
CPC分类号： H01L29/7869 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要：在逆交錯型MOSFET中，以非晶質狀之氧化鋁來形成與通道層相對之閘極絕緣層；而該通道層係由氧化鋅所形成，且係相當於前述半導體層者。採取前述結構，可減低通道層與閘極絕緣層之界面的缺陷水平；本發明之半導體裝置可獲得與把所有的積層膜以結晶性積層膜來製作之半導體裝置相同水準的性能。再者，上述手法亦適用於順交錯型MOSFET等，具有高度泛用性。
简体摘要：在逆交错型MOSFET中，以非晶质状之氧化铝来形成与信道层相对之闸极绝缘层；而该信道层系由氧化锌所形成，且系相当于前述半导体层者。采取前述结构，可减低信道层与闸极绝缘层之界面的缺陷水平；本发明之半导体设备可获得与把所有的积层膜以结晶性积层膜来制作之半导体设备相同水准的性能。再者，上述手法亦适用于顺交错型MOSFET等，具有高度泛用性。

2. 发明专利

TWI227529B 半導體裝置及使用其之顯示裝置 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE USING THE SAME 有权
简体标题：半导体设备及使用其之显示设备 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE USING THE SAME
公开(公告)号：TWI227529B
公开(公告)日：2005-02-01
申请号：TW092106798
申请日：2003-03-26
申请人：川崎雅司 MASASHI KAWASAKI , 大野英男 HIDEO OHNO , 夏普股份有限公司 SHARP KABUSHIKI KAISHA
发明人：吉岡宏人 HIROTO YOSHIOKA , 藤田達也 TATSUYA FUJITA , 越智久雄 HISAO OCHI , 杉原利典 TOSHINORI SUGIHARA , 原猛 TAKESHI HARA , 川崎雅司 MASASHI KAWASAKI , 大野英男 HIDEO OHNO
IPC分类号： H01L
CPC分类号： H01L29/7869 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要：在逆交錯型MOSFET中，以非晶質狀之氧化鋁來形成與通道層相對之閘極絕緣層；而該通道層係由氧化鋅所形成，且係相當於前述半導體層者。採取前述結構，可減低通道層與閘極絕緣層之界面的缺陷水平；本發明之半導體裝置可獲得與把所有的積層膜以結晶性積層膜來製作之半導體裝置相同水準的性能。再者，上述手法亦適用於順交錯型MOSFET等，具有高度泛用性。
简体摘要：在逆交错型MOSFET中，以非晶质状之氧化铝来形成与信道层相对之闸极绝缘层；而该信道层系由氧化锌所形成，且系相当于前述半导体层者。采取前述结构，可减低信道层与闸极绝缘层之界面的缺陷水平；本发明之半导体设备可获得与把所有的积层膜以结晶性积层膜来制作之半导体设备相同水准的性能。再者，上述手法亦适用于顺交错型MOSFET等，具有高度泛用性。

3. 发明专利

JP2009076778A Magnetoresistance effect element and magnetoresistive device 审中-公开
标题翻译：磁阻效应元件和磁阻器件
公开(公告)号：JP2009076778A
公开(公告)日：2009-04-09
申请号：JP2007245933
申请日：2007-09-21
申请人： Fujitsu Ltd , Masashi Kawasaki , 富士通株式会社 , 雅司川崎
发明人： UEHARA YUJI , KOMAGAKI KOJIRO , KAWASAKI MASASHI
IPC分类号： H01L43/10 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3993 , G11C11/161 , Y10T428/1121
摘要： PROBLEM TO BE SOLVED: To provide a high-quality magnetoresistance effect element which is capable of reducing resistance in the perpendicular-plane direction, and preventing deterioration in the performance of a barrier layer, and a magnetoresistive device using the element. SOLUTION: The magnetoresistance effect element comprises: a free layer; a pinned magnetic layer; and a barrier layer formed between the free layer and the pinned magnetic layer. The barrier layer is composed of a semiconductor, more specifically, a semiconductor in which MgO is used as a base material and a small amount of an impurity is doped. Furthermore, a magnetoresistive device is composed of the magnetoresistance effect element. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够降低垂直面方向的电阻并防止阻挡层的性能劣化的高品质磁阻效应元件以及使用该元件的磁阻器件。解决方案：磁阻效应元件包括：自由层; 钉扎磁性层; 以及形成在自由层和被钉扎磁性层之间的阻挡层。阻挡层由半导体，更具体地，其中使用MgO作为基底材料并掺杂少量杂质的半导体构成。此外，磁阻效应元件由磁阻效应元件组成。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2004273614A Semiconductor device and its fabricating process 有权
公开(公告)号：JP2004273614A
公开(公告)日：2004-09-30
申请号：JP2003059905
申请日：2003-03-06
申请人： Masashi Kawasaki , Hideo Ono , Sharp Corp , シャープ株式会社 , 英男大野 , 雅司川崎
发明人： FUJITA TATSUYA , SUGIHARA TOSHINORI , OCHI HISAO , KAWASAKI MASASHI , ONO HIDEO
IPC分类号： G02F1/1368 , H01L21/28 , H01L21/329 , H01L29/786 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which a semiconductor layer is formed of ZnO and aluminium is used as the material of electrode and interconnect line. SOLUTION: The semiconductor device comprises a substrate 1, at least one electrode supported by the substrate 1, and a semiconductor layer (ZnO) 4 touching the upper surface of the electrode at least partially. The electrode comprises a first conductive layer 2 of aluminium, a second conductive layer 3 formed of a material (Ti, or the like) causing less electrolytic corrosion reaction than aluminium between the upper surface of the first conductive layer 2 and the semiconductor layer 4, and an insulating protective layer 7 located between the lower surface of the semiconductor layer 4 and the side face of the first conductive layer 2. COPYRIGHT: (C)2004,JPO&NCIPI

5. 发明专利

JP2004235532A Oxide semiconductor light emitting element 有权
公开(公告)号：JP2004235532A
公开(公告)日：2004-08-19
申请号：JP2003023991
申请日：2003-01-31
申请人： Masashi Kawasaki , Sharp Corp , シャープ株式会社 , 雅司川崎
发明人： SAITO HAJIME , KAWASAKI MASASHI
IPC分类号： H01S5/327 , H01S5/125 , H01S5/187
摘要： PROBLEM TO BE SOLVED: To provide an oxide semiconductor light emitting element of which manufacturing process can be simplified, manufacturing cost can be reduced and in which a light emitting element structure excellent in crystallinity can be formed on a multilayer reflecting film.
SOLUTION: On a sapphire substrate 1, the multilayer reflecting film 2, an n-type ZnO contact layer 3, an n-type Mg
0.1 Zn
0.9 O clad layer 4, a non-doped quantum well light emitting layer 5, a p-type Mg
0.1 Zn
0.9 O clad layer 6, and a p-type ZnO contact layer 7 are laminated. The multilayer reflecting film 2 is constituted by alternately laminating LiGaO
2 layers and ZnO layers. As a result, the reflectivity of the multilayer reflecting film 2 becomes high even if the number of layers constituting the film 2 is small.
COPYRIGHT: (C)2004,JPO&NCIPI

6. 发明专利

JP2004165267A Semiconductor light emitting device, light emission indicator and manufacturing method of them 审中-公开
公开(公告)号：JP2004165267A
公开(公告)日：2004-06-10
申请号：JP2002326742
申请日：2002-11-11
申请人： Masashi Kawasaki , Sharp Corp , シャープ株式会社 , 雅司川崎
发明人： SAITO HAJIME , KAWASAKI MASASHI
IPC分类号： H01L33/06 , H01L33/28 , H01L33/32 , H01S5/343 , H01S5/347 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device and a light emission indicator, which do not require any external power supply and which are operated with a small power consumption even when the external power supply is employed. SOLUTION: A piezoelectric semiconductor thin film crystalline layer 3 is formed on a substrate 1, and a light emitting layer 4 having a multiple quantum well structure is formed on one part of the surface of the layer 3. Then the piezoelectric semiconductor thin film crystalline layer 3 is further formed across the whole surface of the light emitting layer 4 and the piezoelectric semiconductor thin film crystalline layer 3, on which the light emitting layer 4 is not formed. A semiconductor light emitting device 10 having a structure wherein the light emitting layer 4 is embedded into the piezoelectric semiconductor thin film crystalline 3 is obtained. In the light emitting device 10, when a pressure is impressed on the surface of the piezoelectric semiconductor thin film crystalline layer 3 in the direction of thickness of the same, positive and negative carriers are generated by piezoelectric effect while they are combined in the light emitting layer whereby light is emitted. COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2005033172A Semiconductor device, manufacturing method therefor, and electronic device 有权
标题翻译：半导体器件及其制造方法和电子器件
公开(公告)号：JP2005033172A
公开(公告)日：2005-02-03
申请号：JP2004079273
申请日：2004-03-18
申请人： Masashi Kawasaki , Hideo Ono , Sharp Corp , シャープ株式会社 , 英男大野 , 雅司川崎
发明人： SUGIHARA TOSHINORI , ONO HIDEO , KAWASAKI MASASHI
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/66969
摘要： PROBLEM TO BE SOLVED: To allow practical use of a semiconductor device which uses zinc oxide for its active layer and has a protective layer isolating the active layer from the atmosphere. SOLUTION: A thin film transistor 1 has a semiconductor layer 5 which is formed on a gate electrode 3 on an insulating substrate 2 through a gate insulating layer 4, a source electrode 6 and a drain electrode 7 which are formed on the semiconductor layer 5, and a protective layer 8 which covers the electrodes and isolates the semiconductor layer 5 from the atmosphere. The semiconductor layer 5 (active layer) is formed by using a semiconductor in a polycrystalline form of ZnO doped with a Group-V element or the like. Because the surface level is decreased by the protective layer 8 and expansion of a depletion layer into the inside is inhibited, ZnO becomes an n-type semiconductor exhibiting its original resistance value and has excess free electrons. The doped element acts as an acceptor impurity for ZnO, which reduces excess free electrons. Thus, the gate voltage for excluding excess free electrons is reduced, thereby making the threshold voltage become nearly 0 V. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了实际使用使用氧化锌作为其有源层的半导体器件，并且具有将活性层与大气隔离的保护层。解决方案：薄膜晶体管1具有半导体层5，其通过栅极绝缘层4，源电极6和漏电极7形成在绝缘基板2上的栅电极3上，半导体层5形成在半导体层5和覆盖电极并将半导体层5与大气隔离的保护层8。半导体层5（有源层）通过使用以V族元素等掺杂的多晶型的半导体形成。由于保护层8降低了表面水平，并且消耗层向内部的膨胀被抑制，所以ZnO成为表现出其原始电阻值且具有过量自由电子的n型半导体。掺杂元素作为ZnO的受主杂质，其减少过量的自由电子。因此，用于排除过量自由电子的栅极电压降低，从而使阈值电压变为接近0V。（C）2005年，JPO和NCIPI

8. 发明专利

JP2004356196A Oxide semiconductor light emitting element 有权
公开(公告)号：JP2004356196A
公开(公告)日：2004-12-16
申请号：JP2003149236
申请日：2003-05-27
申请人： Masashi Kawasaki , Sharp Corp , シャープ株式会社 , 雅司川崎
发明人： SAITO HAJIME , KAWASAKI MASASHI
IPC分类号： H01L33/12 , H01L33/28 , H01S5/347 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide an oxide semiconductor light emitting element capable of reducing defects in an epitaxial layer while exhibiting high reliability and high emission efficiency. SOLUTION: Between a sapphire substrate 101 and a Cd 0.05 Zn 0.95 O light emitting layer 105, a Zn 2 In 2 O 5 buffer layer 102 and an n-type ZnO buffer layer 103 are formed. The Zn 2 In 2 O 5 buffer layer 102 is a transparent n-type semiconductor having a low electric resistance and exhibiting excellent affinity to a ZnO based semiconductor having a wurtzite crystal structure. COPYRIGHT: (C)2005,JPO&NCIPI

9. 发明专利

JP2004266057A Oxide semiconductor light emitting element and manufacturing method therefor 有权
公开(公告)号：JP2004266057A
公开(公告)日：2004-09-24
申请号：JP2003053927
申请日：2003-02-28
申请人： Masashi Kawasaki , Sharp Corp , シャープ株式会社 , 雅司川崎
发明人： SAITO HAJIME , KAWASAKI MASASHI
IPC分类号： H01L33/06 , H01L33/28 , H01L33/42 , H01S5/028 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a ZnO semiconductor light emitting element which suppresses reactive current and is superior in reliability. SOLUTION: Metal oxide, metal nitride and an insulating protection film are formed on a main surface of the ZnO semiconductor light emitting element. The insulating film is coated with an insulating organic thin film if desired. The element is protected from a reducing atmosphere and aging deterioration is suppressed. Since reactive current flowing on a surface of the element is suppressed, luminous efficacy improves. Thus, the oxide semiconductor light emitting element which is superior in reliability and has high luminous efficacy can be manufactured. COPYRIGHT: (C)2004,JPO&NCIPI

10. 发明专利

JP2004247681A Oxide semiconductor light emitting device 审中-公开
公开(公告)号：JP2004247681A
公开(公告)日：2004-09-02
申请号：JP2003038385
申请日：2003-02-17
申请人： Masashi Kawasaki , Sharp Corp , シャープ株式会社 , 雅司川崎
发明人： SAITO HAJIME , KAWASAKI MASASHI
IPC分类号： H01L33/12 , H01L33/28 , H01L33/40 , H01S5/347 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide an oxide semiconductor light emitting device that is high in electrostatic withstanding voltage and excellent in reliability. SOLUTION: In this oxide semiconductor light emitting device, an n-type ZnO buffer layer 102 is formed between an n-type ZnO single-crystal substrate 101 and an n-type Mg 0.1 Zn 0.9 O clad layer 103. The carrier concentration in the ZnO buffer layer 102 is maintained within the range from 1×10 18 cm -3 to 1×10 21 cm -3 . Consequently, the electrical resistance between the n-type ZnO single-crystal substrate 101 and n-type Mg 0.1 Zn 0.9 O clad layer 103 is reduced, and the electrostatic withstanding voltage of this light emitting device can be improved. COPYRIGHT: (C)2004,JPO&NCIPI

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