发明申请
US20080308836A1 Nitride Semiconductor Device and Method for Growing Nitride Semiconductor Crystal Layer
审中-公开
基本信息:
- 专利标题： Nitride Semiconductor Device and Method for Growing Nitride Semiconductor Crystal Layer
- 专利标题（中）：氮化物半导体器件和氮化物半导体晶体层生长方法
- 申请号：US11883062 申请日：2006-01-26
- 公开(公告)号：US20080308836A1 公开(公告)日：2008-12-18
- 发明人： Ken Nakahara , Kentaro Tamura
- 申请人： Ken Nakahara , Kentaro Tamura
- 申请人地址： JP Kyoto
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto
- 优先权： JP2005-019522 20050127
- 国际申请： PCT/JP2006/301189 WO 20060126
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/00
摘要：
There are provided a nitride semiconductor device such as a nitride semiconductor light emitting device, a transistor device or the like, obtained by forming a buffer layer of a single crystal of the nitride semiconductor, in which both a-axis and c-axis are aligned, directly on a substrate lattice-mismatched with the nitride semiconductor without forming an amorphous low temperature buffer layer, and growing epitaxially the nitride semiconductor layer on the buffer layer of the single crystal. In this device, a single crystal buffer layer (2), made of a single crystal of AlxGayIn1-x-yN (0≦x≦1, 0≦y≦1 and 0≦x+y≦1), in which a-axis and c-axis are aligned, is directly formed on a substrate (1) lattice-mismatched with nitride semiconductor, and a nitride semiconductor layer (3) is epitaxially grown on the buffer layer (2) of the single crystal. The buffer layer of the single crystal can be formed by the use of a PLD method.
摘要（中）：
提供了一种氮化物半导体器件，例如氮化物半导体发光器件，晶体管器件等，其通过形成氮化物半导体的单晶的缓冲层而获得，其中a轴和c轴都被对准 直接在与氮化物半导体晶格失配的衬底上，而不形成非晶低温缓冲层，并且在单晶缓冲层上外延生长氮化物半导体层。 在该器件中，由AlxGayIn1-x-yN（0≤x≤1,0<= y <= 1和0 <= x + y <= 1）的单晶制成的单晶缓冲层（2） ），其中a轴和c轴对准，直接形成在与氮化物半导体晶格失配的衬底（1）上，并且氮化物半导体层（3）外延生长在 单晶。 单晶的缓冲层可以通过使用PLD法形成。