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11. 发明授权

US07616324B2 Ultra precision profile measuring method 有权
标题翻译：超精密轮廓测量方法
公开(公告)号：US07616324B2
公开(公告)日：2009-11-10
申请号：US11992096
申请日：2007-02-15
申请人： Kazuto Yamauchi , Hidekazu Mimura
发明人： Kazuto Yamauchi , Hidekazu Mimura
IPC分类号： G01B11/02
CPC分类号： G01B11/2441 , G01B9/02085 , G01B2290/60 , G01M11/005
摘要： To provide a method for measuring a plane mirror or a curved surface mirror close to plane mirror for condensing hard X-rays or soft X-rays used in a radiation light facility, especially an elliptical or tubular object having a steep profile exceeding 1×10−4 rad, ultra precisely with a precision on nano order or sub-nano order. Overall profile is measured by using overall profile data obtained from a Fizeau interferometer and stitching a plurality of micromeasurement data from a Michelson microinterferometer. A curved surface measured and a reference plane are measured simultaneously by the Fizeau interferometer, a plurality of pieces of partial profile data in a region narrower than the curved surface measured are acquired simultaneously by inclining the curved surface measured and the reference plane simultaneously and sequentially with respect to a reference plane, relative angle between the pieces of partial profile data is measured as the inclination angle of the reference plane, and adjoining pieces of partial profile data are stitched by utilizing coincidence between the inclination angle and an overlapped region thus obtaining overall profile data.
摘要翻译：提供一种用于测量靠近平面镜的平面镜或曲面镜的方法，用于冷凝在辐射光设备中使用的硬X射线或软X射线，特别是具有超过1×10 -4的陡峭轮廓的椭圆形或管状物体 rad，超精密，具有纳米级或亚纳米级的精度。通过使用从Fizeau干涉仪获得的总体轮廓数据并拼接来自迈克尔逊微型干涉仪的多个测微数据来测量总体轮廓。通过Fizeau干涉仪同时测量弯曲表面和参考平面，通过将测量的曲面和参考平面同时并顺序地倾斜并测量的曲面比通过测量的曲面更窄的区域中的多个部分轮廓数据被同时获取测量部分轮廓数据之间的相对角度作为参考平面的倾斜角度，并且通过利用倾斜角度和重叠区域之间的一致来缝合相邻的部分轮廓数据片段，从而获得总体轮廓数据。

12. 发明申请

US20090135431A1 Ultra Precision Profile Measuring Method 有权
标题翻译：超精密轮廓测量方法
公开(公告)号：US20090135431A1
公开(公告)日：2009-05-28
申请号：US11992096
申请日：2007-02-15
申请人： Kazuto Yamauchi , Hidekazu Mimura
发明人： Kazuto Yamauchi , Hidekazu Mimura
IPC分类号： G01B11/24
CPC分类号： G01B11/2441 , G01B9/02085 , G01B2290/60 , G01M11/005
摘要： To provide a method for measuring a plane mirror or a curved surface mirror close to plane mirror for condensing hard X-rays or soft X-rays used in a radiation light facility, especially an elliptical or tubular object having a steep profile exceeding 1×10−4 rad, ultra precisely with a precision on nano order or sub-nano order. Overall profile is measured by using overall profile data obtained from a Fizeau interferometer and stitching a plurality of micromeasurement data from a Michelson microinterferometer. A curved surface measured and a reference plane are measured simultaneously by the Fizeau interferometer, a plurality of pieces of partial profile data in a region narrower than the curved surface measured are acquired simultaneously by inclining the curved surface measured and the reference plane simultaneously and sequentially with respect to a reference plane, relative angle between the pieces of partial profile data is measured as the inclination angle of the reference plane, and adjoining pieces of partial profile data are stitched by utilizing coincidence between the inclination angle and an overlapped region thus obtaining overall profile data.
摘要翻译：提供一种用于测量靠近平面镜的平面镜或曲面镜的方法，用于冷凝在辐射光设备中使用的硬X射线或软X射线，特别是具有超过1×10 -4的陡峭轮廓的椭圆形或管状物体 rad，超精密，具有纳米级或亚纳米级的精度。通过使用从Fizeau干涉仪获得的总体轮廓数据并拼接来自迈克尔逊微型干涉仪的多个测微数据来测量总体轮廓。通过Fizeau干涉仪同时测量弯曲表面和参考平面，通过将测量的曲面和参考平面同时并顺序地倾斜并测量的曲面比通过测量的曲面更窄的区域中的多个部分轮廓数据被同时获取测量部分轮廓数据之间的相对角度作为参考平面的倾斜角度，并且通过利用倾斜角度和重叠区域之间的一致来缝合相邻的部分轮廓数据片段，从而获得总体轮廓数据。

13. 发明申请

US20080265788A1 EL LIGHT EMITTING TOUCH SWITCH 有权
标题翻译： EL发光触摸开关
公开(公告)号：US20080265788A1
公开(公告)日：2008-10-30
申请号：US12109143
申请日：2008-04-24
申请人： Kazuto YAMAUCHI , Yasunori MURAYAMA , Sadahiko TANAKA , Keitaro TAKIZAWA , Kouichi YAMANOUE
发明人： Kazuto YAMAUCHI , Yasunori MURAYAMA , Sadahiko TANAKA , Keitaro TAKIZAWA , Kouichi YAMANOUE
IPC分类号： G09G3/00
CPC分类号： H03K17/962 , H03K2217/960795 , Y10S323/904
摘要： A touch switch is composed of an EL light emitting layer configured by stacking a fluorescent layer and an insulation layer between first electrodes and a second electrode, a judgment means for making a judgment on touch manipulation with the first electrode by an operator and an EL driving unit for driving the EL light emitting layer for light emitting, with each of a plurality of first electrodes, each of plurality of fluorescent layers and each of plurality of insulation layers being provided as a set and the second electrode being provided as a single electrode with respect to the plurality of first electrodes, wherein the judgment means makes a judgment on which of the plurality of first electrodes has been touched by an operator on the basis of a high-frequency component inputted from the second electrode through the first electrode each time the touch switch is touched by an operator.
摘要翻译：触摸开关由通过在第一电极和第二电极之间堆叠荧光层和绝缘层而构成的EL发光层构成，用于通过操作者判断与第一电极的触摸操作的判断装置和EL驱动用于驱动用于发光的EL发光层的单元，其中多个第一电极中的每一个，多个荧光层中的每一个以及多个绝缘层中的每一个设置为一组，并且所述第二电极设置为单个电极，相对于多个第一电极，其中判断装置基于从每个第一电极从第二电极输入的高频分量来判断操作者已经接触了多个第一电极中的哪一个，触摸开关被操作者触摸。

14. 发明申请

US20070238275A1 Catalyst-aided chemical processing method 有权
标题翻译：催化辅助化学处理方法
公开(公告)号：US20070238275A1
公开(公告)日：2007-10-11
申请号：US11401315
申请日：2006-04-11
申请人： Kazuto Yamauchi
发明人： Kazuto Yamauchi
IPC分类号： H01L21/20
CPC分类号： B81C1/00539 , Y10T428/31678 , Y10T442/20
摘要： A catalyst-aided chemical processing method is a novel processing method having a high processing efficiency and suited for processing in a space wavelength range of not less than several tens of μm. The catalyst-aided chemical processing method comprises: immersing a workpiece in a processing solution in which a halogen-containing molecule is dissolved, said workpiece normally being insoluble in said processing solution; and bringing a platinum, gold or ceramic solid catalyst close to or into contact with a processing surface of the workpiece, thereby processing the workpiece through dissolution in the processing solution of a halogenide produced by chemical reaction between a halogen radical generated at the surface of the catalyst and a surface atom of the workpiece.
摘要翻译：催化剂辅助化学处理方法是一种具有高处理效率并适于在不少于几十个微米的空间波长范围内加工的新型加工方法。催化剂辅助化学处理方法包括：将工件浸入其中溶解有含卤素分子的处理溶液中，所述工件通常不溶于所述处理溶液; 并将铂，金或陶瓷固体催化剂与工件的加工表面接近或接触，从而通过溶解在通过在表面上产生的卤素自由基之间的化学反应产生的卤化物的处理溶液中来处理工件催化剂和工件的表面原子。

15. 发明授权

US4960495A Process for precise processing of workpiece using free radicals 失效
标题翻译：使用自由基精确加工工件的工艺
公开(公告)号：US4960495A
公开(公告)日：1990-10-02
申请号：US211184
申请日：1988-06-24
申请人： Yuzo Mori , Kazuto Yamauchi
发明人： Yuzo Mori , Kazuto Yamauchi
IPC分类号： B28D5/00 , C30B33/00
CPC分类号： B28D5/00 , C30B33/00
摘要： The invention relates to a precision process, wherein a radical reaction of a radical produced from a gas on discharge or laser beam excitation in a gaseous atmosphere with an atom or molecule constituting a workpiece is utilized, a compound produced according to the reaction is vaporized and removed, and thus a workpiece such as silicon single crystal, ceramics material or the like can be smoothed, cut, bored, grooved and so forth without leaving a residual defect such as residual crack, thermally affected layer of the like on the surface.

16. 发明授权

US08654097B2 Electrostatic capacitive touch sensor device 有权
标题翻译：静电电容式触摸传感器装置
公开(公告)号：US08654097B2
公开(公告)日：2014-02-18
申请号：US12878462
申请日：2010-09-09
申请人： Kazuto Yamauchi , Yasunori Murayama , Sadahiko Tanaka , Keitaro Takizawa , Kouichi Yamanoue
发明人： Kazuto Yamauchi , Yasunori Murayama , Sadahiko Tanaka , Keitaro Takizawa , Kouichi Yamanoue
IPC分类号： G06F3/045 , G06F3/044 , G08C21/00
CPC分类号： H03K17/962 , H03K2217/960755
摘要： An electrostatic capacitive touch sensor device includes sensing electrode provided at a plurality of positions, a high-frequency signal source that applies a high-frequency signal to the sensing electrode through a predetermined impedance element, a wiring portion that connects the sensing electrode and the impedance element, a shield portion provided to embrace the sensing electrodes and the connecting pattern, and a shield signal source that applies a shield signal to the shield portion and has the same phase and amplitude as the high-frequency signal source.
摘要翻译：静电电容式触摸传感器装置包括设置在多个位置的感测电极，通过预定阻抗元件将高频信号施加到感测电极的高频信号源，连接检测电极的布线部分和阻抗元件，设置成包围感测电极和连接图案的屏蔽部分，以及屏蔽信号源，其向屏蔽部分施加屏蔽信号，并具有与高频信号源相同的相位和幅度。

17. 发明授权

US08148659B2 Touch switch structure 有权
标题翻译：触摸开关结构
公开(公告)号：US08148659B2
公开(公告)日：2012-04-03
申请号：US12523774
申请日：2008-01-29
申请人： Kazuto Yamauchi , Sadahiko Tanaka , Keitaro Takizawa , Yasunori Murayama , Kouichi Yamanoue
发明人： Kazuto Yamauchi , Sadahiko Tanaka , Keitaro Takizawa , Yasunori Murayama , Kouichi Yamanoue
IPC分类号： H03K17/975
CPC分类号： B60H1/0065 , H01H2239/006 , H03K17/962 , H03K2017/9606
摘要： A touch switch structure is provided that can be preferably used for an automotive instrument panel and can securely prevent misjudgments and incorrect detections with respect to operations on the switch. For that purpose, the touch switch structure comprises a base material 2 made of a nonconductive material; a shield electrode layer 4 made of a conductive material and formed on one surface of the base material 2; a touch detection electrode 3 formed on one surface of the base material 2 at the portion where the shield electrode layer 4 is not formed; and an insulation layer 5 made of a nonconductive material and formed at least between the shield electrode layer 4 and a connection pattern 6 of the touch detection electrode 3.
摘要翻译：提供了可以优选地用于汽车仪表板的触摸开关结构，并且可以可靠地防止关于开关上的操作的错误判断和不正确的检测。为此，触摸开关结构包括由非导电材料制成的基材2; 由导电材料制成并形成在基材2的一个表面上的屏蔽电极层4; 在未形成屏蔽电极层4的部分形成在基材2的一个表面上的触摸检测电极3; 以及绝缘层5，其由非导电材料制成，并且至少形成在屏蔽电极层4和触摸检测电极3的连接图案6之间。

18. 发明申请

US20100258361A1 TOUCH SENSOR DEVICE, CONTROL METHOD, TOUCH PANEL DEVICE AND PROGRAM 有权
标题翻译：触摸传感器设备，控制方法，触控面板设备和程序
公开(公告)号：US20100258361A1
公开(公告)日：2010-10-14
申请号：US12745442
申请日：2008-12-16
申请人： Kazuto Yamauchi , Yasunori Murayama , Sadahiko Tanaka , Keitaro Takizawa , Kouichi Yamanoue
发明人： Kazuto Yamauchi , Yasunori Murayama , Sadahiko Tanaka , Keitaro Takizawa , Kouichi Yamanoue
IPC分类号： G06F3/044
CPC分类号： H03K17/962 , G06F3/044
摘要： A touch sensor device 1 of the present invention comprises a touch sensor 11; an average value calculating means 12 for calculating the average value of output voltages sent out from an output section 111 of the touch sensor 11; a threshold value calculating means 13 for calculating a threshold value based on the average value; and a comparing/determining means 14 for comparing the output voltage with the threshold value and, when determining that the output voltage exceeds the threshold value, outputting a determination signal.
摘要翻译：本发明的触摸传感器装置1包括触摸传感器11; 平均值计算装置12，用于计算从触摸传感器11的输出部分111发出的输出电压的平均值; 阈值计算装置13，用于基于平均值计算阈值; 以及比较/确定装置14，用于将输出电压与阈值进行比较，并且当确定输出电压超过阈值时，输出确定信号。

19. 发明申请

US20080302649A1 Structured touch switch 有权
标题翻译：结构化触摸开关
公开(公告)号：US20080302649A1
公开(公告)日：2008-12-11
申请号：US12155627
申请日：2008-06-06
申请人： Kazuto Yamauchi , Yasunori Murayama , Sadahiko Tanaka , Keitaro Takizawa , Kouichi Yamanoue
发明人： Kazuto Yamauchi , Yasunori Murayama , Sadahiko Tanaka , Keitaro Takizawa , Kouichi Yamanoue
IPC分类号： H03K17/955
CPC分类号： H03K17/962
摘要： The present invention relates to a structured touch switch, which is of an electrostatic capacity type. The structured touch switch comprises a substrate made of a material having a non-conductive characteristic, a conductive member made of a material having a conductive characteristic and formed integrally with the substrate so that a portion of the conductive characteristic member appears at a surface of the substrate and a detection electrode positioned at a backside of the substrate and in opposed relation to the conductive member in a state where a space is defined with respect to the conductive member.
摘要翻译：本发明涉及一种具有静电容量类型的结构化触摸开关。结构化触摸开关包括由具有非导电特性的材料制成的衬底，由具有导电特性的材料制成的导电构件，并与衬底一体地形成，使得导电特征构件的一部分出现在基板和位于基板的背面并且在相对于导电构件限定空间的状态下与导电构件相对的检测电极。

20. 发明授权

US09233449B2 Polishing method, polishing apparatus and GaN wafer 有权
标题翻译：抛光方法，抛光装置和GaN晶圆
公开(公告)号：US09233449B2
公开(公告)日：2016-01-12
申请号：US13138635
申请日：2010-03-19
申请人： Yasuhisa Sano , Kazuto Yamauchi , Junji Murata , Shun Sadakuni , Keita Yagi
发明人： Yasuhisa Sano , Kazuto Yamauchi , Junji Murata , Shun Sadakuni , Keita Yagi
IPC分类号： H01L21/461 , B24B37/005
CPC分类号： B24B37/0056
摘要： A polishing method can process and flatten, in a practical processing time and with high surface accuracy, a surface of a substrate of a Ga element-containing compound semiconductor. The polishing method includes: bringing a Ga element-containing compound semiconductor substrate (16) into contact with a polishing tool (10) in the presence of a processing solution (14) comprising a neutral pH buffer solution containing Ga ions; irradiating a surface of the substrate with light or applying a bias potential to the substrate, or applying a bias potential to the substrate while irradiating the surface of the substrate with light, thereby forming Ga oxide (16a) on the surface of the substrate; and simultaneously moving the substrate and the polishing tool relative to each other to polish and remove the Ga oxide formed on the surface of the substrate.
摘要翻译：抛光方法可以在实际的处理时间和高表面精度处理和平坦化含Ga元素的化合物半导体的衬底的表面。抛光方法包括：在包含含有Ga离子的中性pH缓冲溶液的处理溶液（14）的存在下，使含Ga元素的化合物半导体衬底（16）与抛光工具（10）接触; 用光照射衬底的表面或向衬底施加偏置电位，或者在用衬底照射衬底的表面的同时向衬底施加偏置电位，从而在衬底的表面上形成Ga氧化物（16a）; 并且同时相对于彼此移动基板和抛光工具以抛光和去除形成在基板表面上的Ga氧化物。

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