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1. 发明专利

JP2007218852A Ultra-precision shape measuring method 有权
标题翻译：超精密形状测量方法
公开(公告)号：JP2007218852A
公开(公告)日：2007-08-30
申请号：JP2006042547
申请日：2006-02-20
申请人： J Tec:Kk , Kazuto Yamauchi , 和人山内 , 株式会社ジェイテック
发明人： YAMAUCHI KAZUTO , MIMURA HIDEKAZU
IPC分类号： G01B11/24
CPC分类号： G01B11/2441 , G01B9/02085 , G01B2290/60 , G01M11/005
摘要： PROBLEM TO BE SOLVED: To provide an ultra-precision shape measuring method capable of ultra-precisely measuring in the precision of the nano or sub-nano order a plane mirror or a curved surface mirror having a shape similar to a plane for condensing a hard X-ray or a soft X-ray used in a radiation light facility, especially a measuring object having a steep shape exceeding 1×10 -4 rad in an elliptic shape or a cylindrical shape. SOLUTION: The whole shape is measured by stitching a plurality of microscopic measured data by a Michelson type microinterferometer by using the whole shape data by a Fizeau type interferometer. A curved surface to be measured and a reference plane are measured simultaneously by the Fizeau type interferometer, and the curved surface to be measured and the reference plane are tilted simultaneously with respect to a reference surface, and a plurality of partial shape data of a narrower domain than the curved surface to be measured are acquired, and simultaneously a relative angle between each partial shape data is measured as a tilt angle of the reference plane, and adjacent partial shape data are stitched by utilizing the tilt angle and coincidence of superposed domains, to thereby acquire the whole shape data. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够超精细地测量纳米或亚纳米级精度的超精密形状测量方法，具有类似于平面的形状的平面镜或曲面反射镜，冷凝在辐射光设备中使用的硬X射线或软X射线，特别是具有椭圆形或圆柱形的超过1×10 -4 rad的陡峭形状的测量对象。
解决方案：通过使用由Fizeau型干涉仪使用整个形状数据，通过迈克尔逊型微型干涉仪缝合多个微观测量数据来测量整个形状。通过Fizeau型干涉仪同时测量待测量的弯曲表面和参考平面，并且待测量的曲面和参考平面相对于参考表面同时倾斜，并且多个部分形状数据较窄获取要测量的曲面的区域，并且同时测量每个局部形状数据之间的相对角度作为参考平面的倾斜角，并且通过利用叠加域的倾斜角度和重合来缝合相邻的部分形状数据，从而获得整个形状数据。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2006114632A Catalyst-assisted chemical processing method 有权
标题翻译：催化辅助化学处理方法
公开(公告)号：JP2006114632A
公开(公告)日：2006-04-27
申请号：JP2004299263
申请日：2004-10-13
申请人： Yasuhisa Sano , Kazuto Yamauchi , 泰久佐野 , 和人山内
发明人： YAMAUCHI KAZUTO , SANO YASUHISA
IPC分类号： H01L21/306 , B01J37/02
摘要： PROBLEM TO BE SOLVED: To provide a catalyst-assisted chemical processing method which has a high processing efficiency and is suitable for processing in a spatial wavelength region of several 10 μm or above by using a catalytic action which makes a chemical reaction possible without changing a reference surface.
SOLUTION: A workpiece is placed in a processing liquid consisting of a halide acid which does not show a solubility with respect to the workpiece in an ordinary state. A catalyst 1 consisting of a platinum, gold, or ceramic solid-state catalyst is arranged in contact with or very close to a surface 2 to be processed of the workpiece. Halogen radicals generated by molecular dissociation of a hydrogen halide on the surface of the catalyst and surface atoms of the workpiece chemically react with each other by generating a halogenated compound. The workpiece is processed by solving out the halogenated compound.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种催化剂辅助的化学处理方法，其具有高处理效率并且适合于在几个10μm以上的空间波长区域中加工，使用可能产生化学反应的催化作用而不改变参考表面。解决方案：将工件放置在由常规状态下不显示相对于工件的溶解度的卤化物酸组成的处理液中。由铂，金或陶瓷固态催化剂组成的催化剂1被布置成接触或非常接近待加工工件的表面2。通过催化剂表面上的卤化氢的分子解离和工件的表面原子产生的卤素基团通过产生卤代化合物彼此发生化学反应。通过求出卤化物来处理工件。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2011230959A METHOD FOR GRAPHENE FILM DEPOSITION ON SiC SUBSTRATE AND SiC SUBSTRATE WITH GRAPHENE 有权
标题翻译：用于石墨膜沉积在SiC衬底上的方法和具有石墨的SiC衬底
公开(公告)号：JP2011230959A
公开(公告)日：2011-11-17
申请号：JP2010102620
申请日：2010-04-27
申请人： Kazuto Yamauchi , 和人山内
发明人： YAMAUCHI KAZUTO , HATTORI AZUSA , ARIMA KENTA , SANO YASUHISA
IPC分类号： C01B31/02 , H01L21/306 , H01L29/161
摘要： PROBLEM TO BE SOLVED: To provide a method for graphene film deposition on an SiC substrate which forms high-quality graphene by vacuum annealing at a lower temperature without requiring hydrogen annealing treatment, and to provide an SiC substrate with graphene.SOLUTION: The method for graphene film deposition on an SiC substrate comprises: a precision processing step by catalyst-referred etching (CARE) which can flatten a single crystal SiC surface to such a degree that scratches are removed and a step-terrace structure appears; a washing step; and an annealing step of forming graphene on the SiC surface by heat treatment in a vacuum at 800-1,100°C for 1-10 min, wherein the number of layers of graphene is controlled to one or two by controlling the heat treatment conditions in the annealing step.
摘要翻译：要解决的问题：提供一种通过在不需要氢退火处理的较低温度下进行真空退火而形成高质量石墨烯的SiC衬底上的石墨烯膜沉积的方法，并且提供具有石墨烯的SiC衬底。解决方案：用于石墨烯薄膜沉积在SiC衬底上的方法包括：通过催化剂参考蚀刻（CARE）的精密加工步骤，其可以使单晶SiC表面平坦化以使划痕被除去的程度和阶梯式平台结构出现; 洗涤步骤以及通过在800-1100℃的真空中热处理1-10分钟在SiC表面上形成石墨烯的退火步骤，其中通过控制石墨烯的热处理条件将石墨烯的层数控制在一个或两个退火步骤。版权所有（C）2012，JPO＆INPIT

4. 发明授权

US08436494B2 Touch sensor device and touch sensor program 有权
标题翻译：触摸传感器设备和触摸传感器程序
公开(公告)号：US08436494B2
公开(公告)日：2013-05-07
申请号：US12744449
申请日：2008-10-09
申请人： Kazuto Yamauchi , Yasunori Murayama , Sadahiko Tanaka , Keitaro Takizawa , Kouichi Yamanoue , Arihiro Isomura , Kenji Kishiue
发明人： Kazuto Yamauchi , Yasunori Murayama , Sadahiko Tanaka , Keitaro Takizawa , Kouichi Yamanoue , Arihiro Isomura , Kenji Kishiue
IPC分类号： H02B1/24 , H01H83/00
CPC分类号： H03K17/962 , H03K2217/960705 , Y10T307/74 , Y10T307/766
摘要： A touch sensor device comprises: a touch sensor 1 for sending out an output voltage signal S1 representing the presence or absence of an operation; an operation presence/absence determination unit 2 which, when the output voltage signal has a value equal to or more than a predetermined threshold value, determines that the operation has occurred; a stability determination unit 5 for detecting whether a differential signal S3 representing a differential value obtained by differentiating the output voltage signal is limited within a predetermined range or not; and a count-up timer 4 which, when a period during which the differential signal is limited within the predetermined range becomes a predetermined time period or longer on the premise that the output voltage signal has the value equal to or more than the predetermined threshold value, sends out an ON determination signal S5 and allows an external device 7 to operate.
摘要翻译：触摸传感器装置包括：触摸传感器1，用于发出代表操作存在或不存在的输出电压信号S1; 操作存在/不存在确定单元2，当输出电压信号具有等于或大于预定阈值的值时，确定操作已经发生; 用于检测表示通过对输出电压信号进行微分而获得的差分值的差分信号S3是否被限制在预定范围内的稳定性确定单元5; 以及在输出电压信号具有等于或大于预定阈值的前提下，当差分信号被限制在预定范围内的时段变为预定时间段或更长时间的计数计时器4 发出ON确定信号S5并允许外部设备7操作。

5. 发明申请

US20130010929A1 REFLECTIVE SURFACE SHAPE CONTROLLABLE MIRROR DEVICE, AND METHOD FOR MANUFACTURING REFLECTIVE SURFACE SHAPE CONTROLLABLE MIRROR 有权
标题翻译：反射表面形状可控制的镜子装置，以及用于制造反射表面形状可控制反射镜的方法
公开(公告)号：US20130010929A1
公开(公告)日：2013-01-10
申请号：US13519175
申请日：2010-12-28
申请人： Kazuto Yamauchi , Takashi Kimura , Takashi Tsumura
发明人： Kazuto Yamauchi , Takashi Kimura , Takashi Tsumura
IPC分类号： G21K1/06 , G21K1/087 , H01L41/22
CPC分类号： G21K1/06 , G21K2201/064 , G21K2201/067 , Y10T29/42
摘要： The device is configured from: a reflective surface shape controllable mirror in which a band-shaped X-ray reflective surface 2 is formed on a central portion of a front surface of a substrate 1, reference planes 3 are formed along both sides of the X-ray reflective surface, and a plurality of piezoelectric elements 4 are attached to at least one of front and back surfaces of the substrate so as to be arranged in the longitudinal direction of the X-ray reflective surface on both side portions of the substrate, and a multichannel control system for applying a voltage to each of the piezoelectric elements.
摘要翻译：该装置由以下部件构成：反射面形状可控反射镜，其中在基板1的前表面的中心部分上形成带状X射线反射表面2，基准平面3沿X的两侧形成射线反射表面，并且多个压电元件4被附着到基板的前表面和后表面中的至少一个上，以便被布置在基板的两侧部分上的X射线反射表面的纵向方向上，以及用于向每个压电元件施加电压的多通道控制系统。

6. 发明申请

US20120276474A1 METHOD OF CLEANING SUBSTRATE 有权
标题翻译：清洗基板的方法
公开(公告)号：US20120276474A1
公开(公告)日：2012-11-01
申请号：US13455740
申请日：2012-04-25
申请人： Kazuto YAMAUCHI , Tsutomu SHOKI , Takeyuki YAMADA
发明人： Kazuto YAMAUCHI , Tsutomu SHOKI , Takeyuki YAMADA
IPC分类号： G03F1/76 , G03F1/50 , B08B5/00 , B08B3/02 , B08B3/08
CPC分类号： H01L21/02052 , B08B3/02 , B24C1/04 , B24C7/0007 , G03F1/82 , H01L21/67051 , H01L21/67057
摘要： The present invention is a method of cleaning a substrate, comprising cleaning at least one surface of a substrate located in a liquid by injecting pressurized cleaning liquid containing bubbles or cleaning particles from a injection nozzle to at least one surface of the substrate.
摘要翻译：本发明是一种清洗基材的方法，包括通过将含有气泡或清洁颗粒的加压清洗液从注射喷嘴注入基材的至少一个表面来清洗位于液体中的基材的至少一个表面。

7. 发明申请

US20120244649A1 POLISHING METHOD, POLISHING APPARATUS AND POLISHING TOOL 有权
标题翻译：抛光方法，抛光装置和抛光工具
公开(公告)号：US20120244649A1
公开(公告)日：2012-09-27
申请号：US13511802
申请日：2010-12-14
申请人： Yasuhisa Sano , Kazuto Yamauchi , Junji Murata , Takeshi Okamoto , Shun Sadakuni , Keita Yagi
发明人： Yasuhisa Sano , Kazuto Yamauchi , Junji Murata , Takeshi Okamoto , Shun Sadakuni , Keita Yagi
IPC分类号： H01L21/66 , H01L21/306
CPC分类号： H01L21/32125 , B24B37/0053 , B24B37/042 , B24B37/10 , B24B37/30 , B24B49/12 , H01L21/02024
摘要： A polishing method and a polishing apparatus particularly suitable for finishing a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that a surface of a substrate of a compound semiconductor containing an element of Ga can be flattened with high surface accuracy within a practical processing time. In the presence of water (232) such as weak acid water, water with air dissolved therein, or electrolytic ion water, a surface of a substrate (142) made of a compound semiconductor containing either one of Ga, Al, and In and the surface of a polishing pad (242) having an electrically conductive member (264) in an area of the surface which is held in contact with the substrate (142) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate (142).
摘要翻译：一种抛光方法和抛光装置，特别适用于将包含诸如Ga等的元素的化合物半导体的基板的表面整理到期望的平坦度，使得含有元素的化合物半导体的基板的表面的Ga可以在实际的处理时间内以高表面精度平坦化。在存在水（232）如弱酸水，溶于其中的空气的水或电解离子水的存在下，由包含Ga，Al和In中的任一个的化合物半导体制成的基板（142）的表面和在与基板（142）保持接触的表面的区域中具有导电构件（264）的抛光垫（242）的表面相对移动，同时保持彼此接触，从而抛光表面衬底（142）。

8. 发明申请

US20120241087A1 CATALYST-AIDED CHEMICAL PROCESSING METHOD 有权
标题翻译：催化辅助化学处理方法
公开(公告)号：US20120241087A1
公开(公告)日：2012-09-27
申请号：US13449622
申请日：2012-04-18
申请人： Kazuto YAMAUCHI , Yasuhisa Sano
发明人： Kazuto YAMAUCHI , Yasuhisa Sano
IPC分类号： C23F1/08
CPC分类号： B81C1/00539 , Y10T428/31678 , Y10T442/20
摘要： A catalyst-aided chemical processing method is a novel processing method having a high processing efficiency and suited for processing in a space wavelength range of not less than several tens of μm. The catalyst-aided chemical processing method comprises: immersing a workpiece in a processing solution in which a halogen-containing molecule is dissolved, said workpiece normally being insoluble in said processing solution; and bringing a platinum, gold or ceramic solid catalyst close to or into contact with a processing surface of the workpiece, thereby processing the workpiece through dissolution in the processing solution of a halogenide produced by chemical reaction between a halogen radical generated at the surface of the catalyst and a surface atom of the workpiece.
摘要翻译：催化剂辅助化学处理方法是一种具有高处理效率并且适于在不小于几十μm的空间波长范围内进行处理的新型加工方法。催化剂辅助化学处理方法包括：将工件浸入其中溶解有含卤素分子的处理溶液中，所述工件通常不溶于所述处理溶液; 并将铂，金或陶瓷固体催化剂与工件的加工表面接近或接触，从而通过溶解在通过在表面上产生的卤素自由基之间的化学反应产生的卤化物的处理溶液中来处理工件催化剂和工件的表面原子。

9. 发明申请

US20100273381A1 CATALYST-AIDED CHEMICAL PROCESSING METHOD 审中-公开
标题翻译：催化辅助化学处理方法
公开(公告)号：US20100273381A1
公开(公告)日：2010-10-28
申请号：US12832194
申请日：2010-07-08
申请人： Kazuto YAMAUCHI , Yasuhisa Sano
发明人： Kazuto YAMAUCHI , Yasuhisa Sano
IPC分类号： B32B5/02 , B32B15/08 , B32B18/00
CPC分类号： B81C1/00539 , Y10T428/31678 , Y10T442/20
摘要： A catalyst-aided chemical processing method is a novel processing method having a high processing efficiency and suited for processing in a space wavelength range of not less than several tens of μm. The catalyst-aided chemical processing method comprises: immersing a workpiece in a processing solution in which a halogen-containing molecule is dissolved, said workpiece normally being insoluble in said processing solution; and bringing a platinum, gold or ceramic solid catalyst close to or into contact with a processing surface of the workpiece, thereby processing the workpiece through dissolution in the processing solution of a halogenide produced by chemical reaction between a halogen radical generated at the surface of the catalyst and a surface atom of the workpiece.
摘要翻译：催化剂辅助化学处理方法是一种具有高处理效率并且适于在不小于几十μm的空间波长范围内进行处理的新型加工方法。催化剂辅助化学处理方法包括：将工件浸入其中溶解有含卤素分子的处理溶液中，所述工件通常不溶于所述处理溶液; 并将铂，金或陶瓷固体催化剂与工件的加工表面接近或接触，从而通过溶解在通过在表面上产生的卤素自由基之间的化学反应产生的卤化物的处理溶液中来处理工件催化剂和工件的表面原子。

10. 发明申请

US20100183122A1 X-RAY CONDENSING METHOD AND ITS DEVICE USING PHASE RESTORATION METHOD 有权
标题翻译： X射线冷凝方法及其使用相位恢复方法的装置
公开(公告)号：US20100183122A1
公开(公告)日：2010-07-22
申请号：US12440121
申请日：2007-12-27
申请人： Kazuto Yamauchi , Hidekazu Mimura , Hiromi Okada
发明人： Kazuto Yamauchi , Hidekazu Mimura , Hiromi Okada
IPC分类号： G21K1/06
CPC分类号： G21K1/06 , G02B5/0891 , G02B5/10 , G21K2201/067
摘要： An X-ray condensing method and its device are provided with an X-ray mirror that has a wavefront adjustable function to finely adjust a wavefront of a reflecting X-ray, measure an X-ray intensity distribution in the vicinity of a focus, measure an X-ray intensity distribution in the vicinity of the X-ray mirror or use a known X-ray intensity distribution of an incident X-ray, calculate a complex amplitude distribution at the reflective surface by using a phase restoration method from the X-ray intensity distribution in the vicinity of the focus and the X-ray intensity distribution in the vicinity of the reflective surface, calculate a wavefront aberration of an X-ray condensing optical system from the complex amplitude distribution, and control the reflective surface of the X-ray mirror with the wavefront adjustable function so that the wavefront aberration is minimized.
摘要翻译： X射线聚焦方法及其装置设置有具有波前可调功能的X射线镜，以精细地调整反射X射线的波前，测量焦点附近的X射线强度分布，测量在X射线反射镜附近的X射线强度分布或使用已知的入射X射线的X射线强度分布，通过使用来自X射线透镜的相位恢复方法计算出反射面上的复振幅分布，在焦点附近的射线强度分布和反射面附近的X射线强度分布，从复振幅分布计算出X射线聚光光学系统的波前像差，并控制X的反射面具有波前可调功能的光镜，使波前像差最小化。

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