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    • 11. 发明授权
    • Apparatus and method for rinsing substrates
    • 用于漂洗底物的装置和方法
    • US06742279B2
    • 2004-06-01
    • US10052015
    • 2002-01-16
    • Dmitry LubomirskyJoseph J. Stevens
    • Dmitry LubomirskyJoseph J. Stevens
    • F26B508
    • H01L21/67028Y10S134/902
    • Embodiments of the invention provide a spin rinse dry (SRD) chamber for a semiconductor processing system. The SRD chamber includes a selectively rotatable substrate support member having an upper substrate receiving surface formed thereon, and a selectively rotatable shield member positioned above the upper substrate receiving surface, the rotatable shield member having a substantially planar lower surface that may be selectively positioned proximate the upper substrate. Embodiments of the invention further provide a method for rinsing semiconductor substrates, including the steps of positioning the substrate on a substrate support member, positioning a shield member having a substantially planar lower surface in a processing position above the substrate such that the substantially planar lower surface is in parallel orientation with an upper surface of the substrate, and flowing a fluid solution into a processing region defined by the upper surface of the substrate and the substantially planar lower surface via a fluid aperture in the substantially planar lower surface.
    • 本发明的实施例提供了一种用于半导体处理系统的旋转冲洗干燥(SRD)室。 SRD室包括一个有选择地旋转的基板支撑件,其具有形成在其上的上基板接收表面,以及位于上基板接收表面上方的可选择地旋转的屏蔽件,该可旋转屏蔽件具有基本平坦的下表面, 上基板。 本发明的实施例还提供了一种用于冲洗半导体衬底的方法,包括以下步骤:将衬底定位在衬底支撑构件上,将具有基本平坦的下表面的屏蔽构件定位在衬底上方的处理位置,使得基本平坦的下表面 与基底的上表面平行取向,并且使流体溶液经由基本平坦的下表面中的流体孔流动到由基底的上表面和基本上平坦的下表面限定的处理区域中。
    • 13. 发明授权
    • Electroless plating system
    • 无电镀系统
    • US06824612B2
    • 2004-11-30
    • US10036321
    • 2001-12-26
    • Joseph J. StevensDmitry LubomirskyIan PanchamDonald J. OlgadoHoward E. GrunesYeuk-Fai Edwin MokGirish Dixit
    • Joseph J. StevensDmitry LubomirskyIan PanchamDonald J. OlgadoHoward E. GrunesYeuk-Fai Edwin MokGirish Dixit
    • B05C502
    • H01L21/67167C23C18/1632C23C18/1692H01L21/6723
    • A method and apparatus for plating substrates, wherein the apparatus includes a central substrate transfer enclosure having at least one substrate transfer robot positioned therein. A substrate activation chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate plating chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate spin rinse dry chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot, and an annealing chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. At least one substrate pod loader in communication with the substrate transfer chamber and accessible to the at least one substrate transfer robot is also provided.
    • 一种用于电镀基板的方法和装置,其中所述装置包括具有至少一个基板传送机器人的中央基板传送外壳。 提供与中心基板传送外壳连通的基板激活室,并且可由至少一个基板传送机器人访问。 提供与中心基板传送外壳连通的基板电镀室,并且可由至少一个基板传送机器人访问。 提供与中央基板传送外壳连通的基板旋转漂洗干燥室,并且可由至少一个基板传送机器人访问,并且提供与中央基板传送外壳连通的退火室,并且可由至少一个 基板传送机器人。 还提供了至少一个与基板传送室连通并且可由至少一个基板传送机器人访问的基板盒装载器。
    • 14. 发明授权
    • Electric contact element for electrochemical deposition system and method
    • 电接触元件电化学沉积系统及方法
    • US06613214B2
    • 2003-09-02
    • US09730968
    • 2000-12-05
    • Yezdi N. DordiJoseph J. Stevens
    • Yezdi N. DordiJoseph J. Stevens
    • C25D502
    • C25D17/001C25D7/123C25D17/12H01L21/2885H05K3/241
    • An apparatus and associated method for deposition of metal ions contained in an electrolyte solution to form a metal film primarily on a seed layer formed on at least a first side of a substrate. The substrate has a second side that is opposed the first side and an edge joining the first side and the second side. The apparatus comprises a substrate holder system and an electric contact element. The electric contact element physically contacts one of the second side or the edge of the substrate. In one aspect, the substrate is rotated about its vertical axis when the seed layer of substrate is immersed in the electrolyte solution during the metal film deposition. In another aspect, the substrate is not rotated about its vertical axis when the seed layer on the substrate is immersed in the electrolyte solution during the metal film deposition. In different embodiments, the electric contact element contacts the seed layer on the second side of the substrate, a diffusion barrier layer on the second side of the substrate, or the seed layer on the edge of the substrate.
    • 一种用于沉积包含在电解质溶液中的金属离子的装置和相关方法,以主要形成在形成在基底的至少第一侧上的种子层上形成金属膜。 衬底具有与第一侧相对的第二侧和连接第一侧和第二侧的边缘。 该装置包括基板保持器系统和电接触元件。 电接触元件物理地接触基板的第二面或边缘中的一个。 在一个方面,当在金属膜沉积期间将衬底的晶种层浸入电解质溶液中时,衬底围绕其垂直轴线旋转。 在另一方面,当在金属膜沉积期间当衬底上的晶种层浸入电解质溶液中时,衬底不绕其垂直轴旋转。 在不同的实施例中,电接触元件接触衬底的第二侧上的种子层,在衬底的第二侧上的扩散阻挡层或衬底的边缘上的种子层。